BFS466L6

BFS466L6 NPN Silicon RF TWIN Transistor Preliminary data • Low voltage/ low current applications • Ideal for VCO modules and low noise amplifiers • Low noise figure: TR1: 1.1dB at 1.8 GHz TR2: 1.0 dB at 1.8 GHz • World's smallest SMD 6-pin leadless package • Built in 2 transitors (TR1: die as BFR460L3, TR2: die as BFR360L3) $ 64 # 64 " 4 5 6 1 2 3  ! ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFS466L6 Maximum Ratings Parameter Marking Pin Configuration Package AC 1=C1 2=E1 3=C2 4=B2 5=E2 6=B1 TSLP-6-1 Symbol VCEO 4.5 6 VCES 15 15 VCBO 15 15 VEBO 1.5 2 IC 50 35 1 Sep-01-2003 Value Collector-emitter voltage TR1 TR2 Collector-emitter voltage TR1 TR2 Collector-base voltage TR1 TR2 Emitter-base voltage TR1 TR2 Collector current TR1 TR2 Unit V mA BFS466L6 Maximum Ratings Parameter Base current TR1 TR2 Total power dissipation1) TR1, TS ≤ 104°C TR2, TS ≤ 102°C Junction temperature TR1 TR2 Ambient temperature TR1 TR2 Storage temperature TR1 TR2 Thermal Resistance Parameter Junction - soldering point 2) TR1 TR2 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R thJA please refer to Application Note Thermal Resistance Symbol IB Value 5 4 Unit mA Ptot mW 200 210 Tj °C 150 150 TA -65 ... 150 -65 ... 150 T stg -65 ... 150 -65 ... 150 Symbol RthJS ≤ 230 ≤ 230 Value Unit K/W 2 Sep-01-2003 BFS466L6 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Collector-emitter breakdown voltage TR1, IC = 1 mA, IB = 0 TR2, IC = 1 mA, IB = 0 Collector-emitter cutoff current TR1, V CE = 15 V, V BE = 0 TR2, V CE = 15 V, V BE = 0 Collector-base cutoff current TR1, V CB = 5 V, IE = 0 TR2, V CB = 5 V, IE = 0 Emitter-base cutoff current TR1, V EB = 0,5 V, IC = 0 TR2, V EB = 1 V, I C = 0 DC current gain TR1, IC = 20 mA, VCE = 3 V TR2, IC = 20 mA, VCE = 3 V hFE 90 130 130 160 IEBO 1 1 ICBO 100 100 µA ICES 10 10 nA V(BR)CEO 4.5 6 5 9 µA V Symbol min. Values typ. max. Unit Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT TR1, IC = 30 mA, VCE = 3 V, f = 1 GHz TR2, IC = 15 mA, VCE = 3 V, f = 1 GHz Collector-base capacitance TR1, V CB = 3 V, f = 1 MHz, emitter grounded TR2, V CB = 5 V, f = 1 MHz, emitter grounded Collector emitter capacitance TR1, V CE = 3 V, f = 1 MHz, base grounded TR1, V CE = 3 V, f = 1 MHz, base grounded Emitter-base capacitance TR1, V EB = 0,5 V, f = 1 MHz, collector grounded TR2, V EB = 0,5 V, f = 1 MHz, collector grounded 3 Ceb Cce Ccb Unit GHz 16 11 22 14 0.33 0.3 0.17 0.17 0.57 0.48 pF 0.5 0.45 Sep-01-2003 BFS466L6 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. AC Characteristics (verified by random sampling) dB Noise figure F TR1, IC=5mA, V CE = 3 V, f = 1.8 GHz, ZS = ZSopt TR1, IC=5mA, V CE = 3 V, f = 3 GHz, ZS = ZSopt TR2, IC=3mA, V CE = 3 V, f = 1.8 GHz, ZS = ZSopt TR2, IC=3mA, V CE = 3 V, f = 3 GHz, ZS = ZSopt Power gain, maximum available1) TR1, IC = 20 mA, V CE = 3 V, ZS=ZSopt, Z L=ZLopt, f = 1.8 GHz G ma - 1.1 1.4 1 1.4 - |S 21e|2 IP 3 14.5 10 14.5 10 - TR1, IC = 20 mA, V CE = 3 V, ZS=ZSopt, Z L=ZLopt, f = 3 GHz TR2, IC = 15 mA, V CE = 3 V, ZS=ZSopt, Z L=ZLopt, f = 1.8 GHz TR2, IC = 15 mA, V CE = 3 V, ZS=ZSopt, Z L=ZLopt, f = 3 GHz Transducer gain TR1, IC = 20 mA, V CE = 3 V, ZS = ZL = 50Ω, f = 1.8GHz 12.5 9 12.5 8.5 dBm TR1, IC = 20 mA, V CE = 3 V, ZS = ZL = 50Ω, f = 3GHz TR2, IC = 15 mA, V CE = 3 V, ZS = ZL = 50Ω, f = 1.8GHz TR2, IC = 15 mA, V CE = 3 V, ZS = ZL = 50Ω, f = 3GHz Third order intercept point at output 2) TR1, V CE=3V, IC=20mA, ZS=ZL=50Ω, f=1.8GHz TR2, V CE=3V, IC=15mA, ZS=ZL=50Ω, f=1.8GHz 1dB Compression point, at output TR1, IC=20mA, V CE=3V, ZS=ZL=50Ω, f=1.8GHz TR1, IC=15mA, V CE=3V, ZS=ZL=50Ω, f=1.8GHz P -1dB 28 24.5 12 9 - - 1G 1/2 ma = |S21e / S12e| (k-(k²-1) ) 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz 4 Sep-01-2003