BFS469L6

BFS469L6 NPN Silicon RF TWIN Transistor* • Low voltage/ low current applications • Ideal for VCO modules and low noise amplifiers • World's smallest SMD 6-pin leadless package • Built in 2 transitors (TR1: die as BFR460L3, TR2: die as BFR949L3) • Low noise figure: TR1: 1.1dB at 1.8 GHz TR2: 1.5 dB at 1.8 GHz • TR1 with excellent ESD performance typical value > 1500 V (HBM) * Short term description $ 64 # " 4 5 6 1 2 3 64  ! ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFS469L6 Marking Pin Configuration Package AD 1=C1 2=E1 3=C2 4=B2 5=E2 6=B1 TSLP-6-1 1 2005-10-11 BFS469L6 Maximum Ratings Parameter Symbol Value Collector-emitter voltage TR1, TA > 0 °C TR1, TA ≤ 0 °C TR2, TA > 0 °C TR2, TA ≤ 0 °C Collector-emitter voltage TR1 TR2 Collector-base voltage TR1 TR2 Emitter-base voltage TR1 TR2 Collector current TR1 TR2 VCEO 4.5 4.2 10 10 VCES 15 20 VCBO 15 20 VEBO 1.5 1.5 IC 50 50 Unit V mA 2 2005-10-11 BFS469L6 Maximum Ratings Parameter Symbol IB Value Unit Base current TR1 TR2 Total power dissipation1) TR1, TS ≤ 104°C TR2, TS ≤ 100°C Junction temperature TR1 TR2 Ambient temperature TR1 TR2 Storage temperature TR1 TR2 Thermal Resistance Parameter mA 5 5 Ptot mW 200 250 Tj °C 150 150 TA -65 ... 150 -65 ... 150 T stg -65 ... 150 -65 ... 150 Symbol RthJS Value ≤ 230 ≤ 200 Unit Junction - soldering point 2) TR1 TR2 K/W 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R thJA please refer to Application Note Thermal Resistance 3 2005-10-11 BFS469L6 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Symbol min. Values typ. max. Unit Collector-emitter breakdown voltage TR1, IC = 1 mA, IB = 0 TR2, IC = 1 mA, IB = 0 Collector-emitter cutoff current TR1, V CE = 15 V , VBE = 0 TR1, V CE = 20 V, V BE = 0 Collector-base cutoff current TR1, V CB = 5 V, IE = 0 TR2, V CB = 10 V, IE = 0 Emitter-base cutoff current TR1, V EB = 0,5 V, IC = 0 TR2, V EB = 1 V, I C = 0 DC current gainTR1, IC = 20 mA, VCE = 3 V, pulse measured TR2, IC = 5 mA, V CE = 6 V, pulse measured V(BR)CEO V 4.5 10 5.8 16 120 140 µA 10 10 nA 100 100 µA 1 0.1 90 100 160 180 I CES I CBO I EBO hFE 4 2005-10-11 BFS469L6 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. AC Characteristics (verified by random sampling) Transition frequency TR1, IC = 30 mA, VCE = 3 V, f = 1 GHz TR2, IC = 15 mA, VCE = 6 V, f = 1 GHz Collector-base capacitance TR1, V CB = 3 V, f = 1 MHz, VBE = 0 , emitter grounded TR2, V CB = 10 V, f = 1 MHz, VBE = 0 , emitter grounded Collector emitter capacitance TR1, V CE = 3 V, f = 1 MHz, VBE = 0 , base grounded TR2, V CE = 10 V, f = 1 MHz, VBE = 0 , base grounded Emitter-base capacitance TR1, V EB = 0,5 V, f = 1 MHz, V CB = 0 , collector grounded TR2, V EB = 0,5 V, f = 1 MHz, V CB = 0 , collector grounded 0.7 Ceb 0.55 0.14 Cce 0.14 0.25 0.45 Ccb 0.29 0.45 fT 16 7 22 9 pF GHz typ. max. Unit 5 2005-10-11 BFS469L6 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. AC Characteristics (verified by random sampling) Noise figure F Unit dB TR1, IC=5mA, V CE = 3 V, f = 1.8 GHz, ZS = ZSopt TR1, IC=5mA, V CE = 3 V, f = 3 GHz, ZS = ZSopt TR2, IC=3mA, V CE = 6 V, f = 1 GHz, ZS = ZSopt TR2, IC=3mA, V CE = 8 V, f = 1.8 GHz, ZS = ZSopt Power gain, maximum stable 1) TR1, IC = 20 mA, V CE = 3 V, ZS=ZSopt, Z L=ZLopt, f = 1.8 GHz TR2, IC = 10 mA, V CE = 8 V, ZS=ZSopt, Z L=ZLopt, f = 0.9 GHz TR2, IC = 10 mA, V CE = 8 V, ZS=ZSopt, Z L=ZLopt, f = 1.8 GHz Power gain, maximum available 1) TR1, IC = 20mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt , f = 1,8 GHz G ma G ms - 1.1 1.4 1 1.3 - - 17 21.5 15.5 12 - Transducer gain TR1, IC=20mA, V CE = 3 V, ZS=ZL=50Ω, f=1.8GHz TR1, IC=20mA, V CE = 3 V, ZS=ZL=50Ω, f=3GHz TR2, IC=15mA, V CE = 6 V, ZS=ZL=50Ω, f=1GHz TR2, IC=10mA, V CE = 8 V, ZS=ZL=50Ω, f=1.8GHz Third order intercept point at output 2) TR1, V CE=3V, IC=20mA, ZS=ZL=50Ω, f=1.8GHz TR2, V CE=8V, IC=10mA, ZS=ZL=50Ω, f=1.8GHz 1dB Compression point at output TR1, IC=20mA, V CE=3V, ZS=ZL=50Ω, f=1.8GHz TR1, IC=10mA, V CE=8V, ZS=ZL=50Ω, f=1.8GHz |S 21e|2 IP 3 14.5 10 16.5 11.5 dBm P -1dB 28 24.5 12 6 - - 1G 1/2 ma = |S21e / S12e| (k-(k²-1) ), Gms = |S21e / S12e| 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz 6 2005-10-11 Package TSLP-6-1 BFS469L6 Package Outline Top view 0.4 0.05 MAX. +0.1 Bottom view 2 x 0.23 ±0.035 1) 0.8 ±0.05 0.45±0.05 3 4 2 5 6 4 x 0.23 ±0.035 1) 12 ±0.05 5 6 2 1 3 0.87 ±0.05 4 0.55 ±0.05 Pin 1 marking 1 2 x 0.35 ±0.035 1) 4 x 0.15 ±0.035 1) 1) Dimension applies to plated terminal Foot Print For board assembly information please refer to Infineon website "Packages" 0.25 0.8 0.8 0.185 0.76 0.25 R0.125 1.12 1.12 0.25 0.25 0.185 0.29 0.25 0.22 Only 100 µm stencil thickness recommended Stencil apertures 0.37 0.18 Copper 0.25 Solder mask Marking Layout Type code BFS360L6 Laser marking Pin 1 marking Example Standard Packing Reel ø180 mm = 15.000 Pieces/Reel 4 0.5 1.45 Pin 1 marking 1.05 8 7 2005-10-11 BFS469L6 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München © Infineon Technologies AG 2005. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.Infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 8 2005-10-11