BFS480

BFS480 NPN Silicon RF Transistor 4 For low noise, low-power amplifiersin mobile communication systems (pager, cordless telephone) at collector currents from 0.2 mA to 8 m f T = 7 GHz F = 1.5 dB at 900 MHz Two (galvanic) internal isolated Transistors in one package C1 6 E2 5 B2 4 5 6 ESD: Electrostatic discharge sensitive device, observe handling precaution! Junction temperature Ambient temperature Storage temperature Thermal Resistance 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R thJA please refer to Application Note Thermal Resistance 1
Junction - soldering point2)



2 1 3 VPS05604 TR2 TR1 1 B1 2 E1 3 C2 EHA07196 Type BFS480 Maximum Ratings Parameter Marking REs Pin Configuration Package 1=B 2=E 3=C 4=B 5=E 6=C SOT363 Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Value Unit Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation TS 8 10 10 2 10 1.2 80 150 -65 ... 150 -65 ... 150 V mA mW °C 112 °C 1) RthJS 470 K/W Jun-27-2001 BFS480 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 10 V, VBE = 0 Collector-base cutoff current VCB = 8 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 3 mA, VCE = 5 V hFE 30 100 200 IEBO 1 µA ICBO 100 nA ICES 100 µA V(BR)CEO 8 V Symbol min. Values typ. max. Unit 2 Jun-27-2001 BFS480 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter AC characteristics (verified by random sampling) Transition frequency IC = 6 mA, VCE = 5 V, f = 500 MHz Collector-base capacitance VCB = 5 V, f = 1 MHz Collector-emitter capacitance VCE = 5 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 1.5 mA, VCE = 5 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz Power gain, maximum stable 1) IC = 3 mA, VCE = 5 V, ZS = ZSopt , ZL = ZLopt , f = 900 MHz f = 1.8 GHz Transducer gain |S21e|2 , 14 9.5 IC = 3 mA, VCE = 5 V, ZS = ZL = 50 f = 900 MHz f = 1.8 GHz 1G ms Symbol min. fT Ccb Cce Ceb F Gms 5 - Values typ. 7.5 0.23 0.1 0.23 max. 0.4 - Unit GHz pF dB 1.5 2 - 18 14 - = |S21 / S12 |  3 Jun-27-2001 BFS480 Total power dissipation Ptot = f (TS ) 100 mW 80 70 60 50 40 30 20 10 0 0 120 °C P tot 20 40 60 80 100 150 TS Permissible Pulse Load RthJS = f (tp ) Permissible Pulse Load Ptotmax/P totDC = f (tp) 10 3 10 2 K/W Ptotmax / PtotDC - 10 2 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 4 Jun-27-2001 BFS480 Collector-base capacitance Ccb = f (VCB ) Transition frequency f T = f (I C) V CE = Parameter f = 1MHz 0.40 pF 10 GHz 10V 5V 3V 2V 0.30 8 7 Ccb 0.25 fT 6 5 0.20 0.15 4 0.10 3 2 1 0 1V 0.7V 0.05 0.00 0 2 4 6 8 V 12 2 4 6 8 mA 12 VCB IC Power Gain Gma , Gms = f(IC ) f = 0.9GHz VCE = Parameter 22 Power Gain Gma, Gms = f(I C) f = 1.8GHz VCE = Parameter 15 dB dB 8V 2V 8V 13 3V 18 12 2V G G 16 1V 11 10 9 1V 14 0.7V 12 8 7 0.7V 10 6 8 0 5 0 2 4 6 8 mA 12 2 4 6 8 mA 12 IC IC 5 Jun-27-2001 BFS480 Power Gain Gma , Gms = f(VCE):_____ |S21|2 = f(VCE):--------f = Parameter 20 Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50 ) VCE = Parameter, f = 900MHz 22 IC=3mA dB 0.9GHz dBm 8V 5V 3V 2V 16 0.9GHz 14 14 G 12 1.8GHz IP 3 1.8GHz 10 6 2 1V 10 8 6 4 2 0 0 -2 -6 -10 -14 0 1 2 3 4 5 6 7 8 V 10 2 4 6 VCE Power Gain Gma , Gms = f(f) VCE = Parameter 30 dB Power Gain |S21|2= f(f) V CE = Parameter 20 IC=3mA dB IC =3mA 26 24 22 16 G 20 18 16 10 14 12 10 8 6 0.0 0.5 1.0 1.5 2.0 2.5 8V 1V 0.7V GHz G 14 12 8 8V 1V 0.7V 6 3.5 4 0.0 0.5 1.0 1.5 2.0 f 6
8 mA 11 IC 2.5 GHz 3.5 f Jun-27-2001