BFS481

BFS481 NPN Silicon RF Transistor 4 For low-noise, high-gain broadband amplifier at collector currents from 0.5 mA to 12 mA f T = 8 GHz F = 1.4 dB at 900 MHz Two (galvanic) internal isolated Transistors in one package C1 6 E2 5 B2 4 5 6 ESD: Electrostatic discharge sensitive device, observe handling precaution! Junction temperature Ambient temperature Storage temperature Thermal Resistance 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R thJA please refer to Application Note Thermal Resistance 1
Junction - soldering point2)



2 1 3 VPS05604 TR2 TR1 1 B1 2 E1 3 C2 EHA07196 Type BFS481 Maximum Ratings Parameter Marking RFs Pin Configuration Package 1=B 2=E 3=C 4=B 5=E 6=C SOT363 Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Value Unit Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation TS 12 20 20 2 20 2 175 150 -65 ... 150 -65 ... 150 V mA mW °C 83 °C 1) RthJS 380 K/W Jun-27-2001 BFS481 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 5 mA, VCE = 8 V hFE 50 100 200 IEBO 1 µA ICBO 100 nA ICES 100 µA V(BR)CEO 12 V Symbol min. Values typ. max. Unit 2 Jun-27-2001 BFS481 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter AC characteristics (verified by random sampling) Transition frequency IC = 10 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 2 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz Power gain, maximum stable 1) IC = 5 mA, VCE = 8 V, ZS = ZSopt , ZL = ZLopt , f = 900 MHz Power gain, maximum available 2) IC = 5 mA, VCE = 8 V, ZS = ZSopt , ZL = ZLopt , f = 1.8 GHz Transducer gain f = 900 MHz f = 1.8 GHz 1G ms 2G ma Symbol min. fT Ccb Cce Ceb F Gms 6 - Values typ. 8 0.24 0.11 0.35 max. 0.4 - Unit GHz pF dB 1.45 1.8 19 - Gma - 14.5 - |S21e|2 , 15.5 10.5 - = |S21 / S12 | = |S21 / S12 | (k-(k2-1)1/2)  IC = 5 mA, VCE = 8 V, ZS = ZL = 50 3 Jun-27-2001 BFS481 Total power dissipation Ptot = f (TS ) 200 mW 160 140 120 100 80 60 40 20 0 0 120 °C P tot 20 40 60 80 100 150 TS Permissible Pulse Load RthJS = f (tp ) Permissible Pulse Load Ptotmax/P totDC = f (tp) 10 3 10 2 K/W Ptotmax / PtotDC - 10 2 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 4 Jun-27-2001 BFS481 Collector-base capacitance Ccb = f (VCB ) Transition frequency f T = f (I C) V CE = Parameter f = 1MHz 0.4 pF GHz 9 10V 0.3 7 8V Ccb 6 0.25 fT 5 5V 0.2 4 0.15 3 0.1 2 1 0 0 3V 2V 1V 0.7V 0.05 0 0 4 8 12 16 V 22 4 8 12 16 mA 24 VCB IC Power Gain Gma , Gms = f(IC ) f = 0.9GHz VCE = Parameter 22 dB 10V Power Gain Gma, Gms = f(I C) f = 1.8GHz VCE = Parameter 16 dB 5V 10V 18 16 12 3V 5V G G 10 3V 14 2V 8 2V 12 6 10 1V 8 0.7V 4 1V 6 4 0 2 0.7V 5 10 15 mA 25 0 0 5 10 15 mA 25 IC IC 5 Jun-27-2001 BFS481 Power Gain Gma , Gms = f(VCE):_____ |S21|2 = f(VCE):--------f = Parameter 22 dB Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50 ) VCE = Parameter, f = 900MHz 22 dBm 18 IC=5mA 0.9GHz 18 16 0.9GHz 16 14 3V 2V G 14 12 10 8 6 IP 3 1.8GHz 12 10 8 1V 1.8GHz 6 4 2 4 2 0 0 2 4 6 8 V 0 -2 12 -4 0 2 4 6 8 10 12 14 16 mA 20 VCE Power Gain Gma , Gms = f(f) VCE = Parameter 30 Power Gain |S21|2= f(f) V CE = Parameter 22 dB IC=5mA dB IC =5mA 18 16 S21 20 G 14 12 15 10 10V 1V 0.7V 10 8 6 4 2 10V 2V 1V 0.7V 5 0 0 0.5 1 1.5 2 2.5 GHz 3.5 0 0 0.5 1 1.5 2 f 6
8V 5V IC 2.5 GHz 3.5 f Jun-27-2001