BFS482

BFS482 NPN Silicon RF Transistor 4 For low-noise. high-gain broadband amplifiers at collector currents from 0.2 mA to 20 mA f T = 8 GHz F = 1.2 dB at 900 MHz Two (galvanic) internal isolated Transistors in one package C1 6 E2 5 B2 4 5 6 ESD: Electrostatic discharge sensitive device, observe handling precaution! Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point2) RthJS 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R thJA please refer to Application Note Thermal Resistance



2 1 3 VPS05604 TR2 TR1 1 B1 2 E1 3 C2 EHA07196 Type BFS482 Maximum Ratings Parameter Marking RGs Pin Configuration Package 1=B 2=E 3=C 4=B 5=E 6=C SOT363 Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Value 12 20 20 2 35 4 250 150 -65 ... 150 -65 ... 150 mW °C mA Unit V Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation TS 81 °C 1)
275 K/W 1 Jun-27-2001 BFS482 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 10 mA, VCE = 8 V hFE 50 100 200 IEBO 1 µA ICBO 100 nA ICES 100 µA V(BR)CEO 12 V Symbol min. Values typ. max. Unit 2 Jun-27-2001 BFS482 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter AC characteristics (verified by random sampling) Transition frequency IC = 15 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 3 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz Power gain, maximum stable 1) IC = 10 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz Power gain, maximum available 2) IC = 10 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Transducer gain |S21e|2 , 15.5 10 IC = 10 mA, VCE = 8 V, ZS = ZL = 50 f = 900 MHz f = 1.8 GHz 1G ms 2G ma Symbol min. fT Ccb Cce Ceb F Gms 6 - Values typ. 8 0.3 0.12 0.65 max. 0.45 - Unit GHz pF dB 1.2 1.9 19.5 - Gma - 13 - = |S21 / S12 | = |S21 / S12 | (k-(k2-1)1/2)
3 Jun-27-2001 BFS482 Total power dissipation Ptot = f (TS ) 300 mW P tot 200 150 100 50 0 0 20 40 60 80 100 120 °C 150 TS Permissible Pulse Load RthJS = f (tp ) Permissible Pulse Load Ptotmax/P totDC = f (tp) 10 3 10 2 K/W Ptotmax / PtotDC - 10 2 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 4 Jun-27-2001 BFS482 Collector-base capacitance Ccb = f (VCB ) f = 1MHz Transition frequency f T = f (I C) V CE = Parameter 0.50 pF 8.0 8V GHz 0.40 6.0 0.35 5V Ccb fT 0.30 0.25 0.20 0.15 5.0 3V 2V 4.0 3.0 1V 2.0 0.10 0.05 0.00 0 1.0 0.7V 4 8 12 16 V 24 0.0 0 5 10 15 20 25 30 35 mA 45 VCB IC Power Gain Gma , Gms = f(IC ) f = 0.9GHz VCE = Parameter 22 dB 10V Power Gain Gma, Gms = f(I C) f = 1.8GHz VCE = Parameter 14 8V 5V dB 18 5V 10 3V G 3V G 8 16 2V 14 2V 6 12 4 10 1V 1V 8 0.7V 2 0.7V 6 0 5 10 15 20 25 30 35 mA 45 0 0 5 10 15 20 25 30 35 mA 45 IC IC 5 Jun-27-2001 BFS482 Power Gain Gma , Gms = f(VCE):_____ |S21|2 = f(VCE):--------f = Parameter 22 Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50 ) VCE = Parameter, f = 900MHz 28 dBm IC=10mA dB 0.9GHz 24 5V 18 0.9GHz 22 IP 3 G 16 20 3V 18 14 1.8GHz 16 14 12 1.8GHz 10 12 10 1V 8 8 6 0 1 2 3 4 5 6 7 8 V 10 6 0 4 8 12 16 VCE Power Gain Gma , Gms = f(f) VCE = Parameter 32 Power Gain |S21|2= f(f) V CE = Parameter 28 dB IC=10mA dB IC =10mA 24 22 24 20 S21 G 20 18 16 16 14 12 12 8V 10 8 6 4 2 8V 1V 0.7V 8 1V 0.7V 4 0 0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5 0 0.0 0.5 1.0 1.5 2.0 f 6
8V 2V 20 mA 28 IC 2.5 GHz 3.5 f Jun-27-2001