BFS483_07

BFS483 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz, F = 0.9 dB at 900 MHz • Two (galvanic) internal isolated Transistor in one package • For orientation in reel see package information below • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 * Short term description 4 5 6 1 2 3 C1 6 E2 5 B2 4 TR2 TR1 1 B1 2 E1 3 C2 EHA07196 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFS483 1Pb-containing Marking RHs 1=B Pin Configuration 2=E 3=C 4=B 5=E 6=C Package SOT363 package may be available upon special request 2007-04-26 1 BFS483 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 40 °C Junction temperature Ambient temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 2) Symbol RthJS Value ≤ 245 Unit K/W Tj TA T stg 150 -65 ... 150 -65 ... 150 °C Symbol VCEO VCES VCBO VEBO IC IB Ptot Value 12 20 20 2 65 5 450 mW mA Unit V Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, I E = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gainIC = 15 mA, VCE = 8 V, pulse measured 1T Symbol min. V(BR)CEO ICES ICBO IEBO hFE 12 70 Values typ. 100 max. 100 100 1 140 Unit V µA nA µA - S is measured on the collector lead at the soldering point to the pcb 2For calculation of RthJA please refer to Application Note Thermal Resistance 2007-04-26 2 BFS483 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT IC = 25 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz, VBE = 0 , emitter grounded Collector emitter capacitance VCE = 10 V, f = 1 MHz, VBE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Noise figure IC = 5 mA, VCE = 8 V, ZS = ZSopt, f = 900 MHz IC = 5 mA, VCE = 8 V, ZS = ZSopt, f = 1.8 GHz Power gain, maximum stable1) IC = 15 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz Power gain, maximum available2) IC = 15 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Transducer gain IC = 15 mA, VCE = 8 V, ZS = ZL = 50 Ω, f = 900 MHz IC = 15 mA, VCE = 8 V, ZS = ZL = 50 Ω, f = 1.8 MHz 1G 2G 6 - 8 0.34 0.54 GHz pF Ccb Cce - 0.13 - Ceb - 1.1 - F G ms 0.9 1.4 19 - dB dB G ma - 12.5 - dB |S21e|2 15.5 10 - dB ms = |S 21 / S 12| 1/2 ma = |S 21e / S12e| (k-(k²-1) ) 2007-04-26 3 BFS483 Total power dissipation Ptot = ƒ(TS) Permissible Pulse Load RthJS = ƒ(t p) 500 mW 10 3 400 K/W 300 250 200 150 100 50 0 0 120 °C RthJS 10 2 350 Ptot 0.5 0.2 0. 1 0.05 0.2 0.1 0.005 D=0 20 40 60 80 100 150 10 1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 TS tp Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) 10 2 Ptotmax /PtotDC - 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 2007-04-26 4 Package SOT363 BFS483 Package Outline 2 ±0.2 0.2 -0.05 +0.1 0.9 ±0.1 6x 0.1 4 1.25 ±0.1 2.1 ±0.1 M 0.1 MAX. 0.1 A 6 5 Pin 1 marking 1 2 3 0.1 MIN. 0.65 0.65 0.2 M 0.15 +0.1 -0.05 A Foot Print 0.3 0.9 0.7 0.65 0.65 Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. 1.6 Manufacturer 2005, June Date code (Year/Month) Pin 1 marking Laser marking BCR108S Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel For symmetric types no defined Pin 1 orientation in reel. 4 0.2 2.3 8 Pin 1 marking 2.15 1.1 2007-04-26 5 BFS483 Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 2007-04-26 6