BFT92

BFT92 PNP Silicon RF Transistor For broadband amplifiers up to 2 GHz at collector currents up to 20 mA Complementary type: BFR 92P (NPN) 3 Junction temperature Ambient temperature Storage temperature Thermal Resistance 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R thJA please refer to Application Note Thermal Resistance 1
Junction - soldering point 2)


2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFT92 Maximum Ratings Parameter W1s 1=B 2=E 3=C SOT23 Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Value Unit Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation TS 15 20 20 2 25 3 200 150 -65 ... 150 -65 ... 150 V mA mW °C 78 °C 1) RthJS 360 K/W Jul-16-2001 BFT92 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC current gain IC = 15 mA, VCE = 8 V hFE 15 50 IEBO 10 ICBO 100 V(BR)CEO 15 typ. max. Unit V nA µA - 2 Jul-16-2001 BFT92 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter AC characteristics (verified by random sampling) Transition frequency IC = 15 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 2 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz Power gain, maximum available 1) IC = 15 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz f = 1.8 GHz Transducer gain |S21e|2 , 11.5 6 IC = 15 mA, VCE = 8 V, ZS = ZL = 50 f = 900 MHz f = 1.8 GHz Gma 13.5 8 F 2 3.2 dB Ceb 0.77 Cce 0.25 Ccb 0.54 0.8 pF fT 3.5 5 GHz Symbol min. Values typ. max. Unit 1G 2 1/2 ma = |S21 / S12 | (k-(k -1) )  3 Jul-16-2001 BFT92 SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 4.5354 10.983 1.1172 47.577 1.206 1.5939 1.7785 32.171 0.013277 1.2 2.0779 0 3 fA V V fF ps mA V ns - BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = 98.533 0.016123 10.297 0.019729 7.9562 1.5119 0.79082 0.30227 0 0.3 0 0 0.75167 A A NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 0.90551 12.196 1.2703 0.024709 0.79584 0.66749 0.32167 0.21451 922.07 0.3 0.75 1.11 300 fA fA mA - V - V fF V eV K deg fF - Extracted on behalf of Infineon Technologies AG by: Institut für Mobil-und Satellitentechnik (IMST) Package Equivalent Circuit: L BI = L BO = L EI = L EO = L CI = L CO = C BE = C CB = C CE = 0.85 0.51 0.69 0.61 0 0.49 84 165 fF Valid up to 6GHz For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes 4 Jul-16-2001
nH fF


BFT92 Total power dissipation Ptot = f (TS ) 300 mW P tot 200 150 100 50 0 0 20 40 60 80 100 120 °C 150 TS Permissible Pulse Load RthJS = f (tp ) Permissible Pulse Load Ptotmax/P totDC = f (tp) 10 3 10 2 K/W Ptotmax / PtotDC - 10 2 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 5 Jul-16-2001 BFT92 Collector-base capacitance Ccb = f (VCB ) Transition frequency f T = f (I C) V CE = Parameter f = 1MHz 1.6 pF 6.0 GHz 10V 8V 5.0 1.2 4.5 Ccb 5V 4.0 1.0 fT 3.5 0.8 3.0 2.5 0.6 2.0 0.4 1.5 1.0 0.2 0.5 0.0 0 4 8 12 16 V 3V 2V 1V 0.7V 22 0.0 0 5 10 15 20 mA 30 VCB IC Power Gain Gma , Gms = f(IC ) f = 0.9GHz VCE = Parameter 16 dB Power Gain Gma, Gms = f(I C) f = 1.8GHz VCE = Parameter 8.5 10V dB 10V 8V 5V 5V 7.0 3V 2V 12 3V 2V 6.0 G G 1V 10 5.0 4.0 8 6 0.7V 1V 3.0 4 2.0 0.7V 2 1.0 0 0 5 10 15 20 mA 30 0.0 0 5 10 15 20 mA 30 IC IC 6 Jul-16-2001 BFT92 Power Gain Gma , Gms = f(VCE):_____ |S21|2 = f(VCE):--------f = Parameter 16 Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50 ) VCE = Parameter, f = 900MHz 28 dBm IC=15mA dB 0.9GHz 24 12 0.9GHz 22 G 10 1.8GHz IP 3 20 18 16 1V 8 1.8GHz 14 12 6 4 10 8 2 6 0 0 2 4 6 8 V 12 4 0 4 8 12 16 VCE Power Gain Gma , Gms = f(f) VCE = Parameter 30 Power Gain |S21|2= f(f) V CE = Parameter 26 dB IC=15mA dB IC =15mA 22 20 18 20 S21 G 16 14 15 12 10 10 8 6 10V 4 10V 5 2V 1V 0.7 2 0 3.5 -2 0.0 0.5 1.0 1.5 0.7V 2V 0 0.0 0.5 1.0 1.5 2.0 2.5 GHz 2.0 f 7
8V 3V 2V 20 mA 28 IC 2.5 GHz 3.5 f Jul-16-2001