BFY180P

B FY180 HiRel NPN Silicon RF Transistor • • • • • HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0,2 mA to 2,5 mA. Hermetically sealed microwave package fT= 6,5 GHz F = 2.6 dB at 2 GHz Space Qualified ESA/SCC Detail Spec. No.: 5611/006 Type Variant No. 01 4 3 1 2 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFY180 (ql) (ql) Quality Level: Marking Ordering Code see below Pin Configuration C E B E Package Micro-X1 P: Professional Quality, H: High Rel Quality, S: Space Quality, ES: ESA Space Quality, Ordering Code: Ordering Code: Ordering Code: Ordering Code: Q97301013 on request on request Q97111419 (see order instructions for ordering example) Semiconductor Group 1 of 5 Draft B, September 99 B FY180 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage, VBE=0 Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, 2), 3) TS ≤ 176°C Junction temperature Operating temperature range Storage temperature range Thermal Resistance Junction-soldering point 3) Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj Top Tstg Rth JS Values 8 15 15 2 4 0.5 30 200 -65...+200 -65...+200 1) Unit V V V V mA mA mW °C °C °C K/W < 805 Notes.: 1) The maximum permissible base current for VFBE measurements is 3mA (spotmeasurement duration < 1s) 2) At TS = + 176 °C. For TS > + 176 °C derating is required. 3) TS is measured on the collector lead at the soldering point to the pcb. Electrical Characteristics at TA=25°C; unless otherwise specified Parameter DC Characteristics Collector-base cutoff current VCB = 10 V, IE = 0 Collector-emitter cutoff current VCE = 8 V, IB = 0,05µA VCB = 8 V, IE = 0 Emitter base cuttoff current VEB = 2 V, IC = 0 Emitter base cuttoff current VEB = 1 V, IC = 0 Notes: 1.) This Test assures V(BR)CE0 > 8V Semiconductor Group 2 of 5 Draft B, September 99 1.) Symbol min. ICBO ICEX ICBO IEBO IEBO - Values typ. max. 100 50 50 25 0.5 Unit µA µA nA µA µA Collector-base cutoff current B FY180 Electrical Characteristics (continued) Parameter DC Characteristics Base-Emitter forward voltage IE = 3 mA, IC = 0 DC current gain IC = 0,25 mA, VCE = 1 V AC Characteristics Transition frequency IC = 2 mA, VCE = 5 V, f = 500 MHz Collector-base capacitance VCB = 5 V, VBE = vbe = 0, f = 1 MHz Collector-emitter capacitance VCE = 5 V, VBE = vbe = 0, f = 1 MHz Emitter-base capacitance VEB = 0.5V, VCB = vcb = 0, f = 1 MHz Noise Figure IC = 2 mA, VCE = 5 V, f = 2 GHz, ZS = ZSopt Power gain IC = 2 mA, VCE = 5V, f = 2 GHz ZS = ZSopt , ZL= ZLopt Transducer gain IC = 2 mA, VCE = 5 V, f = 2 GHz ZS = ZL = 50 Ω Notes.: 2 |S21e| Symbol min. VFBE hFE 30 Values typ. 100 max. 1 175 Unit V - fT CCB CCE CEB F 5,5 - 6.5 0.15 0.34 0.25 2.6 0.24 0.4 3.2 GHz pF pF pF dB Gma 1.) 12 13.5 - dB 6.5 8 - dB 1) Gma = S 21 ( k − k 2 − 1) , S12 Gms = S 21 S12 Semiconductor Group 3 of 5 Draft B, September 99 B FY180 Order Instructions: Full type variant including quality level must be specified by the orderer. For HiRel Discrete and Microwave Semiconductors the ordering code specifies device family and quality level. Ordering Form: Ordering Code: Q.......... BFY180 (ql) (ql): Quality Level Ordering Example: Ordering Code: BFY180 ES Q97111419 For BFY180 in ESA Space Quality Level Further Informations: See our WWW-Pages: - Discrete and RF-Semiconductors (Small Signal Semiconductors) www.infineon.com/products/discrete/hirel.htm - HiRel Discrete and Microwave Semiconductors www.infineon.com/products/discrete/hirel.htm Please contact also our marketing division : Tel.: Fax.: Address: ++89 234 24480 ++89 234 28438 e-mail: m artin.wimmers@infineon.com Infineon Technologies Semiconductors, High Frequency Products Marketing, P.O.Box 801709, D-81617 Munich Semiconductor Group 4 of 5 Draft B, September 99 B FY180 Micro-X1 Package 4 Published by Infineon TechnologiesSemiconductors, High Frequency Products Marketing, P.O.Box 801709, D-81617 Munich. Infineon Technologies AG 1998. All Rights Reserved. As far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and circuits implemented within components or assemblies. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Offices of Semiconductor Group in Germany or the Infineon Technologies Companies and Representatives woldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the type in question please contact your nearest Infineon Technologies Office, Semiconductor Group. Infineon Technologies Semiconductors is a certified CECC and QS9000 manufacturer (this includes ISO 9000). 3 1 2 Semiconductor Group 5 of 5 Draft B, September 99