BFY193_11

B FY193 HiRel NPN Silicon RF Transistor       4 HiRel Discrete and Microwave Semiconductor For low noise, high-gain amplifiers up to 2GHz. For linear broadband amplifiers Hermetically sealed microwave package fT= 8 GHz F = 2.3 dB at 2 GHz Space Qualified ESA/SCC Detail Spec. No.: 5611/006 Type Variant No. 06 3 1 2 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration 1 2 E 3 B 4 E Package BFY193 (ql) - see below C Micro-X1 (ql) Quality Level: P: Professional Quality H: High Rel Quality S: Space Quality ES: ESA Space Quality (see order instructions for ordering example) I FAG IMM RPD D HIR 1 of 4 V 2, February 2011 B FY193 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage, VBE=0 Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, TS  104°C 2), 3) Junction temperature Operating temperature range Storage temperature range Thermal Resistance Junction-soldering point 3) Rth JS < 165 K/W Notes.: 1) The maximum permissible base current for VFBE measurements is 30mA (spotmeasurement duration < 1s) 2) At TS = + 104 °C. For TS > + 104 °C derating is required. 3) TS is measured on the collector lead at the soldering point to the pcb. Electrical Characteristics at TA=25°C; unless otherwise specified Parameter Symbol min. DC Characteristics Collector-base cutoff current VCB = 20 V, IE = 0 Collector-emitter cutoff current VCE = 12 V, IB = 0,5µA VCB = 10 V, IE = 0 Emitter base cuttoff current VEB = 2 V, IC = 0 Emitter base cuttoff current VEB = 1 V, IC = 0 Notes: 1.) This Test assures V(BR)CE0 > 12V I FAG IMM RPD D HIR 2 of 4 V 2, February 2011 1.) Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj Top Tstg Values 12 20 20 2 80 10 1) Unit V V V V mA mA mW C C C 580 200 -65...+200 -65...+200 Values typ. max. Unit ICBO ICEX - - 100 µA - - 600 µA Collector-base cutoff current ICBO IEBO IEBO - - 50 nA A A - - 25 - - 0.5 B FY193 Electrical Characteristics (continued) Parameter Symbol min. DC Characteristics Base-Emitter forward voltage IE = 30 mA, IC = 0 DC current gain IC = 30 mA, VCE = 8 V AC Characteristics Transition frequency IC = 40mA, VCE = 5 V, f = 500 MHz IC = 50 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance VCB = 10 V, VBE = vbe = 0, f = 1 MHz Collector-emitter capacitance VCE = 10 V, VBE = vbe = 0, f = 1 MHz Emitter-base capacitance VEB = 0.5V, VCB = vcb = 0, f = 1 MHz Noise Figure IC = 15 mA, VCE = 5 V, f = 2 GHz, ZS = ZSopt Power gain IC = 40 mA, VCE = 5V, f = 2 GHz ZS = ZSopt , ZL= ZLopt Transducer gain IC = 40 mA, VCE = 5 V, f = 2 GHz ZS = ZL = 50  Output Power IC = 50 mA, VCE = 5 V, f = 2GHz, PIN=10dBm, ZS = ZL = 50  Notes.: 1.) POUT 16.5 17.5 dBm |S21e| 2 Values typ. max. Unit VFBE hFE - - 1 V 50 100 175 - fT 6,5 CCB CCE CEB F 7.5 8 0.56 0.75 GHz pF - 0.34 - pF - 1.9 2.4 pF - 2.3 2.9 dB Gma 1.) 12.5 13.5 - dB 8 9 - dB Gma  S 21 ( k  k 2  1) , S12 Gms  S 21 S12 I FAG IMM RPD D HIR 3 of 4 V 2, February 2011 B FY193 Micro-X1 Package 4 Edition 2011-02 3 Published by Infineon Technologies AG 85579 Neubiberg, Germany © Infineon Technologies AG 2011 All Rights Reserved. 1 2 Attention please! The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie“). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of an third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. I FAG IMM RPD D HIR 4 of 4 V 2, February 2011