BG3140R

BG3140... DUAL N-Channel MOSFET Tetrode 4 5 6 • Low noise gain controlled input stages of UHFand VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package • Integrated gate protection diodes • Low noise figure • High gain, high forward transadmittance • Improved cross modulation at gain reduction • High AGC-range BG3140 6 5 4 2 1 3 VPS05604 BG3140R 6 5 4 Drain AGC HF Input G2 G1 R G1 VGG HF Output + DC B A B 2 3 1 1 A 2 3 GND EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BG3140 BG3140R Package SOT363 SOT363 1=G1 1=G1 2=G2 2=S Pin Configuration 3=D 3=D 4=D 4=D 5=S 5=G2 6=G1 6=G1 Marking KDs KKs 180° rotated tape loading orientation available Maximum Ratings Parameter Drain-source voltage Continuous drain current Gate 1/ gate 2-source current Gate 1/ gate 2-source voltage Total power dissipation, TS ≤78°C Storage temperature Channel temperature Thermal Resistance Parameter Channel - soldering point1) Symbol Rthchs Symbol VDS ID ±IG1/2SM ±V G1/G2S Ptot Tstg Tch Value 8 25 1 6 160 -55 ... 150 150 Unit V mA V mW °C Value ≤280 Unit K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Feb-27-2004 BG3140... Electrical Characteristics Parameter DC Characteristics Drain-source breakdown voltage ID = 10 µA, VG1S = 0 , VG2S = 0 V(BR)DS Symbol min. 12 6 6 - Values typ. 15 0.7 0.6 max. 15 15 50 50 10 - Unit V Gate1-source breakdown voltage +IG1S = 10 mA, V G2S = 0 , VDS = 0 Gate2-source breakdown voltage +IG2S = 10 mA, V G1S = 0 , VDS = 0 Gate1-source leakage current VG1S = 6 V, VG2S = 0 +V(BR)G1SS +V(BR)G2SS +IG1SS +IG2SS IDSS IDSX VG1S(p) VG2S(p) µA nA µA mA V Gate2-source leakage current VG2S = 8 V, VG1S = 0 , VDS = 0 Drain current VDS = 5 V, VG1S = 0 , VG2S = 4.5 V Drain-source current VDS = 5 V, VG2S = 4 V, RG1 = 70 kΩ Gate1-source pinch-off voltage VDS = 5 V, VG2S = 4 V, ID = 20 µA Gate2-source pinch-off voltage VDS = 5 V, I D = 20 µA 2 Feb-27-2004 BG3140... Electrical Characteristics Parameter Symbol min. AC Characteristics - (verified by random sampling) Forward transconductance VDS = 5 V, V G2S = 4 V Gate1 input capacitance VDS = 5 V, V G2S = 4 V, f = 1 MHz Output capacitance VDS = 5 V, V G2S = 4 V, f = 100 MHz Power gain (self biased) VDS = 5 V, I D = 10 mA, VG2S = 4 V, f = 800 MHz VDS = 5 V, I D = 10 mA, VG2S = 4 V, f = 45 MHz Noise figure VDS = 5 V, I D = 10 mA, VG2S = 4 V, f = 800 MHz VDS = 5 V, I D = 10 mA, VG2S = 4 V, f = 45 MHz Gain control range VDS = 5 V, V G2S = 4...0 V, f = 800 MHz Cross-modulation k=1%, fw=50MHz, funw=60MHz Xmod AGC = 0 dB AGC = 10 dB AGC = 40 dB 96 96 86 100 ∆G p 45 1.7 1.3 F 31 dB 24 Gp dB Cdss 1.1 Cg1ss 1.9 pF gfs 42 mS Values typ. max. Unit 3 Feb-27-2004 BG3140... Total power dissipation Ptot = ƒ(TS) Drain current ID = ƒ(IG1) VG2S = 4V 300 30 mW mA P tot 200 20 150 ID 15 100 10 50 5 0 0 120 °C 0 0 20 40 60 80 100 150 10 20 30 40 50 60 70 80 µA 100 TS IG1 Output characteristics ID = ƒ(V DS) Gate 1 current IG1 = ƒ(V G1S) VDS = 5V VG2S = Parameter 22 mA 1.3V 160 µA 4V 18 16 1.2V 120 ID 14 12 IG1 1.1V 100 3.5V 80 10 8 6 4 2 0 0 2 4 6 8 10 V 0.8V 1V 60 3V 40 2.5V 20 14 0 0 0.5 1 1.5 2 2.5 V 3.5 VDS VG1S 4 Feb-27-2004 BG3140... Gate 1 forward transconductance g fs = ƒ(ID) VDS = 5V, VG2S = Parameter 40 mS 4V Drain current ID = ƒ(V G1S) VDS = 5V VG2S = Parameter 20 mA 4V 16 14 3V 30 3.5V g fs ID 25 3V 12 10 8 2.5V 20 15 2V 2.5V 6 10 2V 4 5 2 28 mA 0 0 1.2 1.4 1.6 1.8 V 0 0 4 8 12 16 20 24 36 0.2 0.4 0.6 0.8 1 2.2 ID VG1S Drain current ID = ƒ(VGG ) VDS = 5V, VG2S = 4V, RG1 = 80kΩ (connected to VGG, VGG =gate1 supply voltage) 13 mA 11 10 9 Drain current ID = ƒ(VGG) VG2S = 4V RG1 = Parameter in kΩ 22 mA 70 80 18 16 100 120 ID 8 7 6 5 4 3 2 1 0 0 0.5 1 1.5 2 2.5 3 3.5 4 V ID 14 12 10 8 6 4 2 5 0 0 1 2 3 4 5 V 7 VGG VGG=VDS 5 Feb-27-2004 BG3140... Crossmodulation Vunw = (AGC) VDS = 5 V, Rg1 = 68 kΩ 120 dBµV V unw 100 90 80 0 10 20 30 dB 50 AGC Cossmodulation test circuit VAGC VDS 4n7 R1 10 kOhm 4n7 2.2 µH 4n7 RL 50 Ohm 4n7 RGEN 50 Ohm RG1 50 Ohm VGG 6 Feb-27-2004