BG3430R

BG3430R DUAL N-Channel MOSFET Tetrode • Designed for input stages of 2 band tuners • Two AGC amplifiers in one single package with on-chip internal switch • Only one switching line to control both FETs • Integrated gate protection diodes • High gain, low noise figure, high AGC-range • Good cross modulation at gain reduction • Pb-free (RoHS compliant) package • Qualified according AEC Q101 Detailed functional diagram on page 4 4 5 6 1 2 3 BG3430R $ # " * )  ! ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BG3430R Package SOT363 1=G1* 2=S Pin Configuration 3=D* 4=D** 5=G2 Marking 6=G1** KNs * For amp. A; ** for amp. B 180° rotated tape loading orientation available 1 2009-10-01 BG3430R Maximum Ratings Parameter Drain-source voltage Continuous drain current Gate 1/ gate 2-source current Gate 1/ gate 2-source voltage Total power dissipation Storage temperature Channel temperature Thermal Resistance Parameter Channel - soldering point1) 1For Symbol VDS ID ±IG1/2SM ±V G1/G2S Ptot Tstg Tch Symbol Rthchs Value 8 25 1 6 200 -55 ... 150 150 Unit V mA V mW °C Value ≤ 280 Unit K/W calculation of RthJA please refer to Application Note Thermal Resistance 2 2009-10-01 BG3430R Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Drain-source breakdown voltage ID = 100 µA, VG1S = 0 V, VG2S = 0 V Gate1-source breakdown voltage +IG1S = 10 mA, V G2S = 0 V, VDS = 0 V Gate2-source breakdown voltage +IG2S = 10 mA, V G1S = 0 V, VDS = 0 V Gate1-source leakage current VG1S = 6 V, VG2S = 0 V Gate2-source leakage current VG2S = 6 V, VG1S = 0 V, VDS = 0 V Drain current VDS = 5 V, VG1S = 0 V, VG2S = 4 V Operating current (selfbiased) VDS = 5 V, VG2S = 4 V, amp.B Drain-source current VDS = 5 V, VG2S = 4 V, RG1 = 100 kΩ, amp. A Gate1-source pinch-off voltage VDS = 5 V, VG2S = 4 V, ID = 100 µA Gate2-source pinch-off voltage VDS = 5 V, I D = 100 µA VG2S(p) 0.6 VG1S(p) 0.5 V IDSX 13 IDSO 13 mA IDSS 100 µA +IG2SS 50 nA +IG1SS 5 µA +V(BR)G2SS 6 15 +V(BR)G1SS 6 15 V(BR)DS 12 V Symbol min. Values typ. max. Unit 3 2009-10-01 BG3430R Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol min. Forward transconductance Gate1 input capacitance f = 10 MHz Output capacitance f = 10 MHz Power gain f = 800 MHz f = 45 MHz Noise figure f = 800 MHz f = 45 MHz Gain control range VG2S = 4 ... 0 V , f = 800 MHz Cross-modulation k=1%, fw=50MHz, funw=60MHz Xmod AGC = 0 dB AGC = 10 dB AGC = 40 dB 90 93 105 ∆G p F 45 1.3 1 Gp 25 33 dB dB Cdss 1.3 gfs Cg1ss Values typ. 33 1.9 max. mS pF Unit AC Characteristics V DS = 5V, V G2S = 4V, (ID = 14 mA) (verified by random sampling) 4 2009-10-01 BG3430R Functional diagram a) shows pinning of BG3430R. G1B (RFinB) G2 (AGC) DB (RFoutB) Amp. A Amp. B bias network partially integrated bias network fully integrated Amp. B G2 VGG Int. switch G2 Vgg = 5 V : Amp. A is ON ; Amp. B is OFF Vgg = 0 V : Amp. A is OFF ; Amp. B is ON S Amp. A and Amp. B share G2 and S pins Amp. A S (RFinA) Rg1 G1A S (Ground) VGG (RFoutA) DA 5 2009-10-01 BG3430R Total power dissipation Ptot = ƒ(TS) amp. A = amp. B 300 Drain current ID = ƒ(IG1) VG2S = 4V amp. A 32 mA mW 24 P tot 200 150 ID 100 50 0 0 120 °C 20 16 12 8 4 20 40 60 80 100 150 0 0 10 20 30 40 50 60 70 80 µA 100 TS IG1 Output characteristics ID = ƒ(V DS) amp. A = amp. B Gate 1 current IG1 = ƒ(V G1S) VDS = 5V, VG2S = Parameter amp. A 240 28 mA 24 22 20 1.5V µA 4V 1.4V 200 180 3.5V Ig1 1.2V 1.1V 1.0V Id 18 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 1.3V 160 140 120 100 2.5V 3V 80 60 40 20 2V V 13 0 0 0.4 0.8 1.2 1.6 2 2.4 V 3.2 Vd Vg1 6 2009-10-01 BG3430R Gate 1 forward transconductance g fs = ƒ(ID), VDS = 5V, VG2S = Parameter amp. A = amp. B 40 4V mS 3.5V Drain current ID = ƒ(V G1S) VDS = 5V, VG2S = Parameter amp. A = amp. B 30 mA 4V 3V 30 3V 24 22 20 2.5V G fs 2.5V Id 25 18 16 14 12 2V 20 15 2V 10 8 6 1.5V 10 5 4 2 0 0 4 8 12 16 20 24 28 32 mA 40 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 V 1.8 ID Vg1 Drain current ID = ƒ(VGG ) amp.A VDS = 5V, VG2S = 4V, RG1 = 100kΩ (connected to VGG, VGG =gate1 supply voltage) 14 mA Drain current ID = ƒ(VGG) VG2S = 4V, RG1 = Parameter in kΩ amp. A 22 mA 80K 18 10 16 14 8 Id 100K 120K 150K Id 12 10 8 6 4 6 4 2 2 0 0 1 2 3 V 5 0 0 1 2 3 4 5 V 7 Vd Vd 7 2009-10-01 BG3430R Crossmodulation Vunw = (AGC) VDS = 5 V, amp. A = amp. B 120 dBµV V unw 100 90 80 0 5 10 15 20 25 30 35 40 dB 50 AGC 8 2009-10-01 BG3430R Crossmodulation test circuit VAGC VDS 4n7 R1 10kΩ 4n7 2.2 uH 4n7 RL 50Ω RGEN 50Ω 4n7 50 Ω RG1 VGG Semibiased VAGC VDS 4n7 R1 10kΩ 4n7 2.2 uH 4n7 RL 50Ω RGEN 50Ω 4n7 50 Ω fullbiased 9 2009-10-01 Package SOT363 BG3430R Package Outline 2 ±0.2 0.2 -0.05 +0.1 0.9 ±0.1 6x 0.1 4 1.25 ±0.1 2.1 ±0.1 M 0.1 MAX. 0.1 A 6 5 Pin 1 marking 1 2 3 0.1 MIN. 0.65 0.65 0.2 M 0.15 +0.1 -0.05 A Foot Print 0.3 0.9 0.7 0.65 0.65 Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. 1.6 Manufacturer 2005, June Date code (Year/Month) Pin 1 marking Laser marking BCR108S Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel For symmetric types no defined Pin 1 orientation in reel. 4 0.2 2.3 8 Pin 1 marking 2.15 1.1 10 2009-10-01 BG3430R Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 11 2009-10-01