BGA416_08

D a t a S h e e t , R e v . 2 . 1 , A p r i l 2 00 8 B G A 4 16 RF Cascode Amplifier S m a l l S i g n a l D i s c r et e s Edition 2008-04-21 Published by Infineon Technologies AG, 81726 München, Germany © Infineon Technologies AG 2008. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BGA416 BGA416, RF Cascode Amplifier Revision History: 2008-04-21, Rev. 2.1 Previous Version: 2005-07-26 Page All 4-5 7-8 Subjects (major changes since last revision) Document layout change Electrical Characteristics slightly changed Figures updated Trademarks SIEGET® is a registered trademark of Infineon Technologies AG. Data Sheet 3 Rev. 2.1, 2008-04-21 BGA416 RF Cascode Amplifier 1 RF Cascode Amplifier Feature • GMA = 23 dB at 900 MHz • Ultra high reverse isolation, 60 dB at 900 MHz • Low noise figure, F50Ω = 1.2 dB at 900 MHz • On chip bias circuitry, 5.5 mA bias current at VCC = 3 V • Typical supply voltage: 2.5 to 5.0 V • SIEGET®-25 technology • Pb-free (RoHS compliant) package 3 2 4 1 Applications • Buffer amplifier • LNAs • Oscillator active devices SOT143 GND, 1 Bias RFout, 4 RFin, 2 GND, 3 BGA 416_Pin_connection.vsd Figure 1 Description Pin connection BGA416 is a monolithic silicon cascode amplifier with high reverse isolation. A bias network is integrated for simplified biasing. Type BGA416 Package SOT143 Marking C1s Note: ESD: Electrostatic discharge sensitive device, observe handling precaution Data Sheet 4 Rev. 2.1, 2008-04-21 BGA416 Electrical Characteristics Maximum Ratings Table 1 Parameter Voltage at pin RFout Device current Input power Total power dissipation, TS < 123°C Junction temperature Ambient temperature range Storage temperature range 2) 1) Maximum ratings Symbol Limit Value 6 20 0.5 8 100 150 -65... 150 -65... 150 Unit V mA mA dBm mW °C °C °C Current into pin RFin VOUT ID Iin Pin Ptot TJ TA TSTG 1) Device current is equal to current into pin RFout 2) TS is measured on the ground lead at the soldering point Note: All Voltages refer to GND-Node Thermal resistance Table 2 Parameter 1) Thermal resistance Symbol Value Unit K/W Junction - soldering point RthJS 270 1) For calculation of RthJA please refer to Application Note Thermal Resistance 2 Electrical Characteristics Electrical characteristics at TA = 25 °C (measured in test circuit specified in Figure 2) VCC = 3 V, unless otherwise specified Table 3 Parameter Maximum available power gain Insertion power gain Reverse isolation Noise figure (ZS = 50 Ω) Output power at 1 dB gain compression (ZS = ZL = 50 Ω) Output third order intercept point (ZS = ZL = 50 Ω) Device current Data Sheet Electrical Characteristics Symbol Min. Values Typ. 23 14 2 Unit Max. dB dB dB dB dB dB dB dB dBm dBm dBm dBm mA Note / Test Condition GMA |S21| |S12| F50Ω P-1dB OIP3 ID 5 17 11 60 40 1.2 1.6 -3 -3 14 14 5.5 f = 0.9 GHz f = 1.8 GHz f = 0.9 GHz f = 1.8 GHz f = 0.9 GHz f = 1.8 GHz f = 0.9 GHz f = 1.8 GHz f = 0.9 GHz f = 1.8 GHz f = 0.9 GHz f = 1.8 GHz Rev. 2.1, 2008-04-21 BGA416 Electrical Characteristics R eference Plane In GND V CC ID Bias-T Out Top View Refere nce Plane RFin Bias-T N.C. RFout GND BGA416_S_Parameter_Circuit.vsd Figure 2 Test Circuit for Electrical Characteristics Data Sheet 6 Rev. 2.1, 2008-04-21 BGA416 Measured Parameters 3 Measured Parameters Power Gain |S |2, G = f(f) 21 ma V = 3V, I = 5.5mA CC D 40 35 G 30 ma Matching |S11|, |S22| = f(f) V = 3V, I = 5.5mA CC D 0 S −1 −2 −3 22 [dB] 25 20 15 10 |S21| 2 |S |, |S | [dB] −4 S11 −5 −6 −7 −8 ma |S | , G 2 21 5 0 11 22 −9 0 1 2 3 4 −10 0 1 2 3 4 Frequency [GHz] Frequency [GHz] Reverse Isolation |S12| = f(f) VCC = 3V, I D = 5.5mA 0 −10 Noise figure F = f(f) VCC = 3V, I D = 5.5mA 3 2.5 −20 2 −30 |S12| [dB] −40 −50 F [dB] 0 1 2 3 4 1.5 1 −60 0.5 −70 −80 0 0 0.5 1 1.5 2 2.5 3 Frequency [GHz] Frequency [GHz] Data Sheet 7 Rev. 2.1, 2008-04-21 BGA416 Package Information Device Current I D = f(V CC ) 12 11 10 9 8 [mA] I D 7 6 5 4 3 2 1 0 0 1 2 3 4 5 VCC [V] 4 Package Information 0.15 MIN. 2.9 ±0.1 1.9 4 3 B 1 ±0.1 0.1 MAX. 1.3 ±0.1 2.4 ±0.15 10˚ MAX. 1 2 10˚ MAX. 0.2 0.8 +0.1 -0.05 0.4 +0.1 -0.05 (1.7) 0.25 M B 0.08...0.1 0...8˚ A A 5 0.2 M GPS05559 Figure 3 Package Outline SOT143 4 0.2 Pin 1 3.15 2.6 8 1.15 CSOG5812 Figure 4 Data Sheet Tape for SOT143 8 Rev. 2.1, 2008-04-21