BGA420_07

BGA420 Si-MMIC-Amplifier in SIEGET  25-Technologie • Cascadable 50 Ω-gain block • Unconditionally stable • Gain |S21|2 = 13 dB at 1.8 GHz IP3out = +13 dBm at 1.8 GHz (V D = 3 V, ID = typ. 6.7 mA) • Noise figure NF = 2.3 dB at 1.8 GHz • Reverse isolation > 28 dB and return loss IN / OUT > 12 dB at 1.8 GHz • Pb-free (RoHS compliant) package 1) Circuit Diagram 1 2 GND EHA07385 3 4 1 2 VD 4 3 OUT IN ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BGA420 Maximum Ratings Parameter Device current Device voltage Total power dissipation TS = 110 °C RF input power Junction temperature Ambient temperature Storage temperature Thermal Resistance Marking BLs 1, IN Pin Configuration 2, GND 3, OUT 4, VD Package SOT343 Symbol ID VD Ptot PRFin Tj TA Tstg RthJS Value 15 6 90 0 150 -65 ... 150 -65 ... 150 Unit mA V mW dBm °C Junction - soldering point 2) 1Pb-containing 2For ≤ 410 K/W package may be available upon special request calculation of RthJA please refer to Application Note Thermal Resistance 1 2007-07-12 BGA420 Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter AC characteristics VD = 3 V, Zo = 50 Ω Device current Insertion power gain f = 0.1 GHz f = 1 GHz f = 1.8 GHz Reverse isolation f = 1.8 GHz Noise figure f = 0.1 GHz f = 1 GHz f = 1.8 GHz Intercept point at the output f = 1 GHz 1dB compression point f = 1 GHz Return loss input f = 1.8 GHz Return loss output f = 1.8 GHz Typical biasing configuration +VD 100 pF RF OUT 100 pF 10 nF 4 3 BGA 420 1 100 pF RF IN GND EHA07386 Symbol min. ID |S21|2 17 15 11 25 5.4 Values typ. 6.7 19 17 13 28 max. 8 - Unit mA dB S12 NF IP3out P-1dB RLin RLout 10 -6 8 12 1.9 2.2 2.3 13 -2.5 11 16 2.3 2.6 2.7 - dBm dB 2 Note: 1) Large-value capacitors should be connected from pin 4 to ground right at the device to provide a low impedance path. 2) The use of plated through holes right at pin 2 is essential for pc-board-applications. Thin boards are recommended to minimize the parasitic inductance to ground. 2 2007-07-12 BGA420 Typical S-Parameters at TA = 25 °C f GHz S11 MAG ANG MAG S21 ANG MAG S12 ANG MAG S22 ANG VD = 3 V, Zo = 50 Ω 0.1 0.5686 -8.5 0.5 0.5066 -19.2 0.8 0.4404 -28.7 1 0.3904 -34.6 1.5 0.2841 -50.5 1.8 0.2343 -60.6 1.9 0.2136 -64.1 2 0.2062 -68.4 2.4 0.1688 -89.7 3 0.1558 -104.9 9.314 8.393 7.352 6.69 5.244 4.567 4.355 4.165 3.417 2.861 170.6 149.4 135.2 126.8 111.1 104 102 99.7 91.7 85.3 0.0268 0.0248 0.0236 0.024 0.0314 0.0378 0.0406 0.0426 0.0549 0.0682 12.7 11.7 25.6 35.9 57.2 63.5 66.1 67.2 71.4 73.1 0.2808 0.2613 0.2361 0.2144 0.1398 0.0979 0.0838 0.0689 0.0224 0.0284 -8.6 -3.8 -6.7 -9 -15 -18.2 -21.5 -22.2 -48 -147.5 Spice-model BGA 420 BGA 420-chip including parasitics +V 14 R2 13 R1 R3 OUT T1 R1 R2 R3 C1 CP1 CP2 CP3 CP4 EHA07387 T501 14.5kΩ 140Ω 2.4kΩ 2.3pF 0.2pF 0.2pF 0.6pF 0.1pF IN 11 C P1 C1 T1 C P2 12 GND C P3 C P4 3 2007-07-12 BGA420 Transistor Chip Data T1 (Berkley-SPICE 2G.6 Syntax) : IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 0.21024 39.251 1.7763 34.368 1.3152 1.3491 3.7265 4.5899 1.3364 0.99532 1.4935 0 3 fA V V Ω fF ps mA V ns - BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = 83.23 0.16493 10.526 0.25052 15 1.9289 0.70367 0.3641 0 0.48652 0 0 0.99469 A A Ω V deg fF - NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM RS = 1.0405 15.761 0.96647 0.037223 0.21215 0.12691 0.37747 0.19762 96.941 0.08161 0.75 1.11 300 fA fA A Ω V fF V eV K Ω C'-E'-Diode Data (Berkley-SPICE 2G.6 Syntax) : IS = 2 fA N= 1.02 - 20 All parameters are ready to use, no scaling is necessary Package Equivalent Circuit: L2 +V C1 C2 L BO IN L BI C CB L1 14 11 BGA 420 Chip 12 C BE L EI 13 L CI L CO OUT C’-E’Diode C3 C CE L EO GND EHA07388 L BI = L BO = L EI = L EO = L CI = L CO = C BE = C CB = C CE = C1 = C2 = C3 = L1 = L2 = 0.36 0.4 0.3 0.15 0.36 0.4 95 6 132 28 88 8 0.6 0.4 nH nH nH nH nH nH fF fF fF fF fF fF nH nH Valid up to 3GHz Extracted on behalf of Infineon Technologies AG by: Institut für Mobil-und Satellitentechnik (IMST) For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes 4 2007-07-12 BGA420 Insertion power gain |S21|2 = f (f) VD, ID = parameter 25 Insertion power gain |S21|2 = f (f) VD = 3 V TA = parameter 22 dB VD=5V, ID=12.4mA VD=4V, ID=9.4mA VD=3V, ID=6.4mA VD=2V, ID=3,4mA dB 18 TA=-20°C TA=+25°C TA=+75°C |S21|2 |S21|2 0 1 16 14 12 10 15 10 8 6 5 4 2 0 -1 10 10 GHz 10 0 -1 10 10 0 GHz 10 1 f f Noise figure NF = f (f) VD,ID = parameter 5 Noise figure NF = f (f) VD = 3V TA = parameter 3.5 dB dB VD=5V, ID=12.4mA VD=3V, ID=6.4mA TA=+75°C TA=+25°C TA=-20°C 2.5 NF 3 NF 0 1 2 2 1.5 1 1 0.5 0 -1 10 10 GHz 10 0 -1 10 10 0 GHz 10 1 f f 5 2007-07-12 BGA420 Intercept point at the output IP3out = f (f) VD,ID = parameter 20 dBm Intercept point at the output IP3out = f (f), VD = 3V TA = parameter 12 16 VD=5V, ID=12.4mA VD=4V, ID=9.4mA VD=3V, ID=6.4mA VD=2V, ID=3.4mA dBm 10 9 IP3out IP3out 14 12 10 8 6 4 2 0 -1 10 0 8 7 6 5 4 3 2 1 TA=-20°C TA=+25°C TA=75°C 10 GHz 10 1 0 -1 10 10 0 GHz 10 1 f f 6 2007-07-12 Package SOT343 BGA420 Package Outline 2 ±0.2 1.3 4 3 0.15 1 0.3 +0.1 -0.05 4x 0.1 M +0.1 0.6 -0.05 0.9 ±0.1 0.1 MAX. 0.1 A 1.25 ±0.1 2.1 ±0.1 2 0.1 MIN. 0.15 -0.05 0.2 M +0.1 A Foot Print 0.6 0.8 1.15 0.9 Marking Layout (Example) Manufacturer 1.6 2005, June Date code (YM) Pin 1 BGA420 Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 Pin 1 2.15 2.3 8 1.1 7 2007-07-12 BGA420 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 8 2007-07-12