BGA427

BGA427 Si-MMIC-Amplifier in SIEGET 25-Technologie 3 Unconditionally stable Gain |S21|2 = 18.5 dB at 1.8 GHz (Appl.1) gain |S21|2 = 22 dB at 1.8 GHz (Appl.2) IP3out = +7 dBm at 1.8 GHz (VD =3V, ID =9.4mA) Noise figure NF = 2.2 dB at 1.8 GHz Typical device voltage VD = 2 V to 5 V   Cascadable 50 -gain block 4 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BGA427 Maximum Ratings Parameter Device current Device voltage RF input power Junction temperature Ambient temperature range Storage temperature range Thermal Resistance Junction - soldering point1) RthJS





2 1 VPS05605 3 +V Reverse isolation 35 dB (Appl.2) 4 OUT Circuit Diagram IN 1 2 GND EHA07378 Marking BMs 1, IN Pin Configuration 2, GND 3, +V 4, Out Package SOT343 Symbol ID VD,+V Ptot PRFin Tj TA Tstg Value 25 6 150 -10 150 -65 ... 150 -65 ... 150 Unit mA V mW dBm °C Total power dissipation TS = 120 °C
295 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Aug-02-2001 BGA427 Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol min. AC characteristics VD = 3 V, Zo = 50 , Testfixture Appl.1 Insertion power gain |S21|2 f = 0.1 GHz f = 1 GHz f = 1.8 GHz Reverse isolation f = 1.8 GHz Noise figure f = 0.1 GHz f = 1 GHz f = 1.8 GHz Intercept point at the output f = 1.8 GHz Return loss input f = 1.8 GHz Return loss output f = 1.8 GHz Values typ. max. dB 27 22 18.5 22 Unit Typical configuration Appl.1 +V 100 pF RF OUT 1 nF BGA 427 100 pF RF IN GND EHA07379 Note: 1) Large-value capacitors should be connected from pin 3 to ground right at the device to provide a low impedance path (appl.1). 2) The use of plated through holes right at pin 2 is essential for pc-board-applications. Thin boards are recommended to minimize the parasitic inductance to ground.
S12 NF IP3out RLin RLout - 1.9 2 2.2 +7 >12 >9 dBm dB Appl.2 +V 10 nF 2.2 pF 100 nH 100 pF 100 pF RF OUT BGA 427 100 pF RF IN GND EHA07380 2 Aug-02-2001 BGA427 S-Parameters at TA = 25 °C, (Testfixture, Appl.1) f GHz S11 MAG ANG MAG S21 ANG MAG S12 ANG MAG S22 ANG Spice-model BGA 427 BGA 427-chip including parasitics +V 13 R2 T2 R1 R3 C’-E’Diode 14 OUT IN 11 C P1 C1 T1 C P2 12 GND EHA07381 C P3 C P4 C P5 R4 0.1pF 0.1pF CP5 C'-E'-diode T1 3




VD = 3V, Zo = 50 0.1 0.1382 0.2 0.1179 0.5 0.1697 0.8 0.1824 0.9 0.1782 1 0.176 1.5 0.1827 1.8 0.1969 1.9 0.2021 2 0.2116 2.5 0.2437 3 0.258 -38.3 -16 -20.8 -56.9 -69.1 -80.6 -133.5 -156.1 -162.8 -167.7 172.8 153.3 24.821 24.606 22.236 18.258 17.152 15.786 10.923 9.029 8.486 8.015 6.259 5.103 164.9 158.9 135.2 115.4 109.4 104 84.9 77 74.7 72.3 63 55 0.0022 0.0046 0.0104 0.0169 0.0194 0.0225 0.0385 0.0479 0.0517 0.0549 0.0709 0.0892 50.7 71.8 83.8 94.8 97.3 98.3 99.7 99.3 98.9 98.8 97.1 96.9 0.6435 0.6278 0.54 0.4453 0.4326 0.4129 0.3852 0.3917 0.3946 0.3991 0.4202 0.4477 174.8 166.9 147.3 140.2 139.4 138.1 139.6 139.3 138.8 138.3 134.6 131 T1 T2 R1 R2 R3 R4 C1 CP1 CP2 CP3 CP4 T501 T501 14.5k 280 2.4k 170 2.3pF 0.2pF 0.2pF 0.6pF Aug-02-2001 BGA427 Transistor Chip Data T1 (Berkley-SPICE 2G.6 Syntax) : IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 0.21024 39.251 1.7763 34.368 1.3152 1.3491 3.7265 4.5899 1.3364 0.99532 1.4935 0 3 fA V V fF ps mA V ns - BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = 83.23 0.16493 10.526 0.25052 15 1.9289 0.70367 0.3641 0 0.48652 0 0 0.99469 A A NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 1.0405 15.761 0.96647 0.037223 0.21215 0.12691 0.37747 0.19762 96.941 0.08161 0.75 1.11 300 fA fA A - V deg fF - fF V eV K C'-E'-Diode Data (Berkley-SPICE 2G.6 Syntax) : All parameters are ready to use, no scaling is necessary Package Equivalent Circuit: L2 OUT C1 C2 L BO IN L BI C CB L1 14 11 BGA 427 Chip 12 C BE L EI 13 L CI L CO +V C’-E’Diode C3 C CE L EO GND EHA07382 LBI = LBO = LEI = LEO = LCI = LCO = CBE = CCB = CCE = C1 = C2 = C3 = L1 = L2 = 0.36 0.4 0.3 0.15 0.36 0.4 95 6 132 28 88 8 0.6 0.4 Valid up to 3GHz Extracted on behalf of Infineon Technologies AG by: Institut für Mobil-und Satellitentechnik (IMST) For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes 4 Aug-02-2001
IS = 2 fA N= 1.02 - RS = 20
V nH nH nH nH nH nH fF fF fF fF fF fF nH nH

BGA427 Insertion power gain |S21|2 = f (f) VD, ID = parameter 35 Noise figure NF = f (f) VD,ID = parameter 5.0 dB VD=5V, ID=17.5mA VD=4V, ID=13.3mA VD=3V, ID=9.5mA VD=2V, ID=5.2mA dB 4.0 3.5 |S 21|2 25 VD=5V, ID=17.5mA VD=3V, ID=9.5mA NF 0 1 20 3.0 2.5 15 2.0 1.5 1.0 10 5 0.5 0 -1 10 0.0 -1 10 0 1 10 GHz 10 10 GHz 10 f f Intercept point at the output IP3out = f (f) VD,ID = parameter 25 dBm IP3out VD=5V, ID=17.5mA VD=4V, ID=13.3mA VD=3V, ID=9.5mA VD=2V, ID=5.2mA 15 10 5 0 -1 10 10 0 GHz 10 1 f 5 Aug-02-2001