BGA427_07

BGA427 Si-MMIC-Amplifier in SIEGET  25-Technologie • Cascadable 50 Ω-gain block • Unconditionally stable • Gain |S21|2 = 18.5 dB at 1.8 GHz (Appl.1) gain |S 21| 2 = 22 dB at 1.8 GHz (Appl.2) IP 3out = +7 dBm at 1.8 GHz (V D=3V, I D=9.4mA) • Noise figure NF = 2.2 dB at 1.8 GHz • Typical device voltage V D = 2 V to 5 V • Reverse isolation > 35 dB (Appl.2) • Pb-free (RoHS compliant) package 1) 4 3 +V 3 4 1 2 Circuit Diagram IN 1 OUT 2 GND EHA07378 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BGA427 Maximum Ratings Parameter Device current Device voltage Marking BMs 1, IN Pin Configuration 2, GND 3, +V 4, Out Package SOT343 Symbol ID VD,+V Ptot PRFin Tj TA Tstg Value 25 6 150 -10 150 -65 ... 150 -65 ... 150 Unit mA V mW dBm °C Total power dissipation TS = 120 °C RF input power Junction temperature Ambient temperature range Storage temperature range Thermal Resistance Junction - soldering point 2) 1Pb-containing 2For RthJS ≤ 295 K/W package may be available upon special request calculation of RthJA please refer to Application Note Thermal Resistance 1 2007-07-12 BGA427 Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Values min. AC characteristics VD = 3 V, Zo = 50Ω, Testfixture Appl.1 Insertion power gain f = 0.1 GHz f = 1 GHz f = 1.8 GHz Reverse isolation f = 1.8 GHz Noise figure f = 0.1 GHz f = 1 GHz f = 1.8 GHz Intercept point at the output f = 1.8 GHz Return loss input f = 1.8 GHz Return loss output f = 1.8 GHz Typical configuration Appl.1 +V 100 pF RF OUT 1 nF BGA 427 100 pF RF IN Unit max. dB typ. |S21|2 27 22 18.5 22 - S12 NF IP3out RLin RLout - 1.9 2 2.2 +7 >12 >9 - dBm dB Appl.2 +V 10 nF 2.2 pF 100 nH 100 pF 100 pF RF OUT GND EHA07379 BGA 427 100 pF RF IN GND EHA07380 Note: 1) Large-value capacitors should be connected from pin 3 to ground right at the device to provide a low impedance path (appl.1). 2) The use of plated through holes right at pin 2 is essential for pc-board-applications. Thin boards are recommended to minimize the parasitic inductance to ground. 2 2007-07-12 BGA427 S-Parameters at TA = 25 °C, (Testfixture, Appl.1) f GHz S11 MAG ANG MAG S21 ANG MAG S12 ANG MAG S22 ANG VD = 3V, Zo = 50Ω 0.1382 -38.3 0.1 0.1179 -16 0.2 0.1697 -20.8 0.5 0.1824 -56.9 0.8 0.1782 -69.1 0.9 0.176 -80.6 1 0.1827 -133.5 1.5 0.1969 -156.1 1.8 0.2021 -162.8 1.9 0.2116 -167.7 2 0.2437 172.8 2.5 0.258 153.3 3 24.821 24.606 22.236 18.258 17.152 15.786 10.923 9.029 8.486 8.015 6.259 5.103 164.9 158.9 135.2 115.4 109.4 104 84.9 77 74.7 72.3 63 55 0.0022 0.0046 0.0104 0.0169 0.0194 0.0225 0.0385 0.0479 0.0517 0.0549 0.0709 0.0892 50.7 71.8 83.8 94.8 97.3 98.3 99.7 99.3 98.9 98.8 97.1 96.9 0.6435 0.6278 0.54 0.4453 0.4326 0.4129 0.3852 0.3917 0.3946 0.3991 0.4202 0.4477 174.8 166.9 147.3 140.2 139.4 138.1 139.6 139.3 138.8 138.3 134.6 131 Spice-model BGA 427 BGA 427-chip including parasitics +V 13 R2 T2 R1 R3 C’-E’Diode 14 OUT IN 11 C P1 C1 T1 C P2 12 GND EHA07381 C P3 C P4 C P5 R4 T1 T2 R1 R2 R3 R4 C1 C P1 C P2 C P3 C P4 T501 T501 14.5kΩ 280Ω 2.4kΩ 170Ω 2.3pF 0.2pF 0.2pF 0.6pF 0.1pF 0.1pF C P5 C'-E'-diode T1 3 2007-07-12 BGA427 Transistor Chip Data T1 (Berkley-SPICE 2G.6 Syntax) : IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 0.21024 39.251 1.7763 34.368 1.3152 1.3491 3.7265 4.5899 1.3364 0.99532 1.4935 0 3 fA V V Ω fF ps mA V ns - BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = 83.23 0.16493 10.526 0.25052 15 1.9289 0.70367 0.3641 0 0.48652 0 0 0.99469 A A Ω V deg fF - NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 1.0405 15.761 0.96647 0.037223 0.21215 0.12691 0.37747 0.19762 96.941 0.08161 0.75 1.11 300 fA fA A Ω V fF V eV K Ω C'-E'-Diode Data (Berkley-SPICE 2G.6 Syntax) : IS = 2 fA N= 1.02 - RS = 20 All parameters are ready to use, no scaling is necessary Package Equivalent Circuit: L2 OUT C1 C2 L BO IN L BI C CB L1 14 11 BGA 427 Chip 12 C BE L EI 13 L CI L CO +V C’-E’Diode C3 C CE L EO GND EHA07382 L BI = L BO = L EI = L EO = L CI = L CO = C BE = C CB = C CE = C1 = C2 = C3 = L1 = L2 = 0.36 0.4 0.3 0.15 0.36 0.4 95 6 132 28 88 8 0.6 0.4 nH nH nH nH nH nH fF fF fF fF fF fF nH nH Valid up to 3GHz Extracted on behalf of Infineon Technologies AG by: Institut für Mobil-und Satellitentechnik (IMST) For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes 4 2007-07-12 BGA427 Insertion power gain |S21|2 = f (f) VD, ID = parameter 35 dB Noise figure NF = f (f) VD,ID = parameter 5.0 dB 4.0 |S21|2 25 3.5 VD=5V, ID=17.5mA VD=3V, ID=9.5mA NF 0 1 20 3.0 2.5 15 2.0 1.5 1.0 10 5 0.5 0 -1 10 GHz 10 10 0.0 -1 10 10 0 GHz 10 1 f f Intercept point at the output IP3out = f (f) VD,ID = parameter 25 dBm IP3out 15 10 5 0 -1 10 10 0 GHz 10 1 f 5 2007-07-12 Package SOT343 BGA427 Package Outline 2 ±0.2 1.3 4 3 0.15 1 0.3 +0.1 -0.05 4x 0.1 M +0.1 0.6 -0.05 0.9 ±0.1 0.1 MAX. 0.1 A 1.25 ±0.1 2.1 ±0.1 2 0.1 MIN. 0.15 -0.05 0.2 M +0.1 A Foot Print 0.6 0.8 1.15 0.9 Marking Layout (Example) Manufacturer 1.6 2005, June Date code (YM) Pin 1 BGA420 Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 Pin 1 2.15 2.3 8 1.1 6 2007-07-12 BGA427 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 7 2007-07-12