BGA428_07

D at a S he et , R e v . 2. 2 , N ov e m be r 2 00 7 B G A 4 28 Gain and PCS Low Noise Amplifier S m a l l S i g n a l D i s c r et e s Edition 2007-11-06 Published by Infineon Technologies AG, 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BGA428 BGA428, Gain and PCS Low Noise Amplifier Revision History: 2007-11-06, Rev. 2.2 Previous Version: 2002-03-26 Page 9 Subjects (major changes since last revision) Correction of cross-reference Trademarks SIEGET® is a registered trademark of Infineon Technologies AG. Data Sheet 3 Rev. 2.2, 2007-11-06 BGA428 Silicon Germanium Broadband MMIC Amplifier 1 Silicon Germanium Broadband MMIC Amplifier Feature • High gain, GMA = 20 dB at 1.8 GHz • Low noise figure, NF = 1.4 dB at 1.8 GHz • Prematched • Ideal for GSM, DCS1800, PCS1900 • Open collector output • Typical supply voltage: 2.4 - 3 V • SIEGET®-45 technology • Pb-free (RoHS compliant) package1) 4 5 6 1 2 3 SOT363 1) Pb-containing package may be available upon special request Figure 1 Description Pin connection BGA428 is a high gain, low noise amplifier. Type BGA428 Package SOT363 Marking PGs Note: ESD: Electrostatic discharge sensitive device, observe handling precaution Data Sheet 4 Rev. 2.2, 2007-11-06 BGA428 Silicon Germanium Broadband MMIC Amplifier Maximum Ratings Table 1 Parameter Device voltage Voltage at pin Out Voltage at pin GS Current into pin In Total device current Input power2) Total power dissipation, TS < 125 °C Junction temperature Operating temperature range Storage temperature range 1) Itot = Current into Out + Current into VCC 3) 1) Maximum ratings Symbol Limit Value 4 4 3.5 0.5 12 8 50 150 -40... 85 -65... 150 Unit V V V mA mA dBm mW °C °C °C VCC Vout VGS Iin Itot Pin Ptot TJ TOP TSTG 2) Valid for: a) ZL = 50 Ω, ZS = 50 Ω, VCC = 2.7 V, Vout = 2.7 V, VGS = 0.0 V, GND = 0.0 V b) ZL = 50 Ω, ZS = 50 Ω, VCC = 0.0 V, Vout = 0.0 V, VGS = 2.7 V, GND = 0.0 V 3) TS is measured on the ground lead at the soldering point Note: All Voltages refer to GND-Node Thermal resistance Table 2 Parameter 1) Thermal resistance Symbol Value Unit K/W RthJS 220 Junction - soldering point 1) For calculation of RthJA please refer to Application Note Thermal Resistance Data Sheet 5 Rev. 2.2, 2007-11-06 BGA428 Electrical Characteristics 2 Electrical Characteristics Electrical characteristics at TA = 25 °C (measured in test circuit specified in Figure 2), VCC = 2.7 V, Frequency = 1.8 GHz, unless otherwise specified 2.1 Table 3 Parameter Electrical Characteristics Symbol Min. Values Typ. 20 1.4 -19 9 8.2 13.5 Max. dB dB dBm dBm mA dB Unit Note / Test Condition Maximum available power gain GMA Noise figure (ZS = 50 Ω) NF Input power at 1 dB gain compression P-1dB Input third order intercept point IIP3 Itot Total device current Insertion loss in gain-step-mode LGS VCC = 0.0 V, VCTRL = 2.7 V, RCRRL = 3 kΩ R eference Plane V CTRL RCTRL =3k Ω GS GND Bias-T OUT Bias-T Out In IN Reference Plane V CC 47pF Top View 180pF 100nF 2.7V BGA428_Test_Circuit.vsd Figure 2 Test Circuit for Electrical Characteristics and S-Parameter Data Sheet 6 Rev. 2.2, 2007-11-06 BGA428 Electrical Characteristics Table 4 Frequency [GHz] 0.100 0.200 0.300 0.400 0.600 0.800 1.000 1.200 1.400 1.600 1.800 1.900 2.000 2.200 2.400 3.000 4.000 5.000 6.000 S-Parameter at 2.7 V (see Electrical Characteristics for conditions) S11 Mag 0.6756 0.5936 0.5150 0.4587 0.4004 0.3743 0.3743 0.3816 0.3922 0.4086 0.4265 0.4314 0.4371 0.4505 0.4640 0.4935 0.5181 0.5202 0.5128 S11 Ang -31.7 -53.6 -71.4 -86.6 -110.7 -129.1 -143.0 -154.5 -164.4 -1.72.4 -178.9 -178.8 176.1 171.2 167.2 155.9 141.2 126.9 110.0 S21 Mag 58.775 47.806 39.232 31.740 23.868 18.509 14.825 12.288 10.353 8.879 7.732 7.214 6.771 5.976 5.298 3.935 2.605 1.911 1.479 S21 Ang -19.6 -43.1 -59.5 -71.8 -89.6 -103.2 -114.5 -124.7 -134.2 -143.2 -151.4 -155.2 -159.1 -166.6 -173.5 167.0 139.2 113.6 89.9 S12 Mag 0.0005 0.0014 0.0021 0.0028 0.0042 0.0063 0.0082 0.0093 0.0110 0.0132 0.0141 0.0146 0.0150 0.0169 0.0181 0.0217 0.0282 0.0319 0.0489 S12 Ang 153.5 138.4 119.0 104.9 105.9 94.3 92.4 87.2 85.3 79.4 79.4 76.1 77.0 75.2 73.2 68.3 65.1 62.2 56.0 S22 Mag 0.9491 0.9327 0.9174 0.9035 0.8807 0.8593 0.8352 0.8116 0.7865 0.7597 0.7309 0.7199 0.7097 0.6791 0.6593 0.5925 0.5284 0.4829 0.4323 S22 Ang -3.9 -6.3 -8.3 -10.3 -14.0 -17.7 -21.4 -25.1 -28.7 -32.2 -36.0 -37.5 -39.1 -42.3 -45.6 -53.3 -64.9 -75.1 -81.7 Data Sheet 7 Rev. 2.2, 2007-11-06 BGA428 Electrical Characteristics 2.2 Application Circuit Characteristics (measured in test circuit specified in Figure 3), TA = 25 °C,VCC = 2.7 V, Frequency = 1.85 GHz, unless otherwise specified Table 5 Parameter Application Circuit Characteristics Symbol Min. Values Typ. 19 1.4 -19 -9 8.2 13.5 Max. dB dB dBm dBm mA dB Unit Note / Test Condition Insertion power gain |S21|2 Noise figure (ZS = 50 Ω) NF Input power at 1 dB gain compression P-1dB Input third order intercept point IIP3 Itot Total device current Insertion loss in gain-step-mode LGS VCC = 0.0 V, VCTRL = 2.7 V, RCRRL = 3 kΩ 47pF 180pF 3k Ω VCTRL Supply GS Vcc 3.9nH RFin 150pF Out 0.9pF RFout In BGA428 GND BGA428_Application_Circuit.vsd Figure 3 Application Circuit for 1850 MHz Data Sheet 8 Rev. 2.2, 2007-11-06 BGA428 Measured Parameters 3 Measured Parameters Refer to the application circuit given in Figure 3 Power Gain |S21| =f(f) V = 2.7V, V =2.7V CC Out 20 2 Power Gain |S21| =f(f) V = 2.7V, V =2.7V CC Out 23 2 15 22 10 21 Insertion Gain [dB] Insertion Gain [dB] 0 1 2 3 4 5 6 5 20 0 19 −5 18 −10 17 −15 −20 16 −25 15 1.7 1.8 1.9 2 2.1 Frequency [GHz] Frequency [GHz] Off−Gain |S | =f(V ) 21 CTRL V = 0.0V, V =0.0V,R CC Out −10 −11 2 CTRL =2.7kΩ Matching |S11|,|S22|=f(f) V = 2.7V, V =2.7V CC Out 0 S −5 −12 22 1800MHz −13 S11 −10 Insertion Gain [dB] −14 −15 −16 −17 −18 1990MHz |S11|, |S22| [dB] 3.2 −15 −20 −25 −19 −20 2 2.2 2.4 2.6 2.8 3 −30 1 1.5 2 2.5 3 V CTRL [V] Frequency [GHz] Data Sheet 9 Rev. 2.2, 2007-11-06 BGA428 Measured Parameters Input Compression Point P−1dB=f(f) Device Current I=f(ϑ) V =2.7V, V =2.7V CC Out 9 8.8 −16.5 −17 8.6 Input Compression Point [dBm] −17.5 8.4 VCC=2.7V −18 Device Current [mA] 8.2 8 7.8 7.6 −18.5 VCC=2.85V −19 V =2.4V CC 7.4 −19.5 7.2 −20 1800 7 −20 1850 1900 1950 2000 0 20 40 60 80 Frequency [MHz] Temperature [°C] Insertion Gain |S | =f(ϑ) 21 VCC=2.7V, VOut=2.7V 25 24 23 22 21 2 |S21|2 [dB] f=1800MHz 20 19 18 17 16 15 −20 f=1990MHz 0 20 40 60 80 Temperature [°C] Data Sheet 10 Rev. 2.2, 2007-11-06 BGA428 Package Information 4 Package Information 2 ±0.2 +0.1 0.2 -0.05 0.9 ±0.1 6x 0.1 4 M 0.1 MAX. 0.1 A 6 5 Pin 1 marking 1 2 3 0.1 MIN. 0.65 0.65 0.2 M 0.15 +0.1 -0.05 A GPS05604 Figure 4 Package Outline SOT363 4 0.2 2.3 8 Pin 1 marking 2.15 1.1 CSOG5902 Figure 5 Tape for SOT363 Data Sheet 11 1.25 ±0.1 2.1 ±0.1 Rev. 2.2, 2007-11-06