BGA628L7

BGA628L7 Silicon Germanium Wide Band Low Noise Amplifier Data Sheet Revision 1.1, 2009-12-17 Preliminary RF & Protection Devices Edition 2009-12-17 Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BGA628L7 BGA628L7 Silicon Germanium Wide Band Low Noise Amplifier Revision History: 2009-12-17, Revision 1.1 Previous Revision: 2009-08-03, Revision 1.0 Page 5 6 13 Subjects (major changes since last revision) Features and description updated Table “Pin Definition and Function“ added Application Information added Trademarks of Infineon Technologies AG A-GOLD™, BlueMoon™, COMNEON™, CONVERGATE™, COSIC™, C166™, CROSSAVE™, CanPAK™, CIPOS™, CoolMOS™, CoolSET™, CONVERPATH™, CORECONTROL™, DAVE™, DUALFALC™, DUSLIC™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, E-GOLD™, EiceDRIVER™, EUPEC™, ELIC™, EPIC™, FALC™, FCOS™, FLEXISLIC™, GEMINAX™, GOLDMOS™, HITFET™, HybridPACK™, INCA™, ISAC™, ISOFACE™, IsoPACK™, IWORX™, M-GOLD™, MIPAQ™, ModSTACK™, MUSLIC™, my-d™, NovalithIC™, OCTALFALC™, OCTAT™, OmniTune™, OmniVia™, OptiMOS™, OPTIVERSE™, ORIGA™, PROFET™, PRO-SIL™, PrimePACK™, QUADFALC™, RASIC™, ReverSave™, SatRIC™, SCEPTRE™, SCOUT™, S-GOLD™, SensoNor™, SEROCCO™, SICOFI™, SIEGET™, SINDRION™, SLIC™, SMARTi™, SmartLEWIS™, SMINT™, SOCRATES™, TEMPFET™, thinQ!™, TrueNTRY™, TriCore™, TRENCHSTOP™, VINAX™, VINETIC™, VIONTIC™, WildPass™, X-GOLD™, XMM™, X-PMU™, XPOSYS™, XWAY™. Other Trademarks AMBA™, ARM™, MULTI-ICE™, PRIMECELL™, REALVIEW™, THUMB™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO. OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Sattelite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2009-10-19 Preliminary Data Sheet 3 Revision 1.1, 2009-12-17 BGA628L7 Table of Contents Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 1 2 2.1 2.2 2.2.1 2.2.2 2.2.3 2.2.4 2.2.5 2.2.6 2.2.7 2.2.8 3 4 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Electrical Characteristics at f = 450 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Electrical Characteristics at f = 900 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Electrical Characteristics at f = 1.575 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Electrical Characteristics at f = 1.9 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Electrical Characteristics at f = 2.14 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Electrical Characteristics at f = 2.4 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Electrical Characteristics at f = 3.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Electrical Characteristics at f = 5.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Package Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Preliminary Data Sheet 4 Revision 1.1, 2009-12-17 Silicon Germanium Wide Band Low Noise Amplifier BGA628L7 Features • • • Extremely thin and small dimension (1.4 mm x 1.26 mm x 0.31 mm only) Operating frequency range 0.4 - 6 GHz High gain at low current consumption of 5.8 mA Gma = 21.5 dB at 1.575 GHz Gma = 19.0 dB at 2.4 GHz Low noise figure NFmin = 0.75 dB at 1.575 GHz NFmin = 0.8 dB at 2.4 GHz Typical supply voltage: 2.75 V Off mode Integrated RF choke on internal bias network Input and Output pre-matched on chip Low external part count 2 kV HBM ESD protection on all pins Leadless, Pb-free (RoHS compliant) and halogen-free TSLP-7-8 package 6 7 5 4 1 • 2 3 TSLP-7-8 • • • • • • • Applications • General Purpose LNA for Bluetooth, GPS, ISDB-T Mobile TV, UMTS, Wi-Fi and WLAN Vcc,4 In,2 On/Off 10kΩ Out,5 GND,7 BGA 628L7 _Pin_ connection.vsd Figure 1 Pin Connection Note: ESD: Electrostatic discharge sensitive device, observe handling precaution Product Name BGA628L7 Preliminary Data Sheet Marking BR 5 Package TSLP-7-8 Revision 1.1, 2009-12-17 BGA628L7 Features Description The BGA628L7 is a wide band low noise amplifier, based on Infineon Technologies’ Silicon Germanium Technology B7HFM. It features extremely small form factor with height of 0.32 mm maximum, and size of 1.4 x 1.26 mm2 only. Such small dimension, together with the low external part count, has made it ideal for size-critical modules e.g. for WLAN, mobile TV or cellular phones. Having an On/Off switch on-chip, the LNA's Out pin is simutaneously used for RF Out and On/Off switch. This functionality can be accessed using a RF-Choke at the Out pin, where a DC level of 0 V or an open switches the device on and a DC level of VCC switches off. Please refer to the product website (www.infineon.com) for various application examples, application notes and technical reports. Pin Definition and Function Table 1 Pin No. 1 2 3 4 5 6 7 Pin Definition and Function Symbol n.c. In n.c. Vcc Out n.c. GND Function not connected RF input not connected DC supply RF output and On/Off switch not connected Ground Preliminary Data Sheet 6 Revision 1.1, 2009-12-17 BGA628L7 Maximum Ratings 1 Maximum Ratings Table 2 Parameter Maximum Ratings Symbol Min. Values Typ. – – – – – – – – – – – Max. 3.5 4 0.1 1 10 6 35 150 150 150 2000 V V mA mA mA dBm mW °C °C °C V – – – – – – – – 65 65 – Unit Note / Test Condition – – – – – – – – – – – Voltage at pin VCC Voltage at pin Out Current into pin In Current into pin Out Current into pin VCC RF input power Total power dissipation, TS < 138 °C Junction temperature Ambient temperature range Storage temperature range 1) VCC Vout Iin Iout IVcc Pin Ptot TJ TA TSTG ESD capability all pins (HBM: JESD22-A114) VESD 1) TS is measured on the ground lead at the soldering point Note: All Voltages refer to GND-Node Thermal Resistance Table 3 Parameter Thermal Resistance Symbol Value Unit K/W RthJS 330 Junction - soldering point1) 1) For calculation of RthJA please refer to Application Note Thermal Resistance Preliminary Data Sheet 7 Revision 1.1, 2009-12-17 BGA628L7 Electrical Characteristics 2 2.1 Electrical Characteristics DC Characteristics Table 4 Parameter DC Characteristics at TA = 25 °C Symbol Min. Values Typ. 5.8 260 – Max. – – 0.8 mA μA V – – 0 Unit Note / Test Condition Total device on current Total device off current On / Off switch control voltage Itot-on Itot-off Von VCC = 2.75 V VCC = 2.75 V, Vout = VCC VCC = 2.75 V ON-Mode: Vout = Von Voff 2.0 – 3.5 V VCC = 2.75 V OFF-Mode: Vout = Voff Top View 1 7 6 In 2 BGA 628L 7 TSLP-7 -8 3 4 DC, 2.75V 5 Out BGA 628L 7_S_Parameter _Circuit.vsd Figure 2 S-Parameter Test Circuit (loss-free microstrip line) Preliminary Data Sheet 8 Revision 1.1, 2009-12-17 BGA628L7 Electrical Characteristics 2.2 AC Characteristics 2.2.1 Electrical Characteristics at f = 450 MHz Table 5 Parameter Electrical Characteristics at TA = 25 °C (measured according to Figure 2), VCC = 2.75 V, unless otherwise specified Symbol Min. Gma |S21| |S21| 2 2 Values Typ. 24.5 18.8 -42 2 11 0.65 0.8 -13 Max. – – – – – – – – – – – – – – – – Unit dB dB dB dB dB dB dB dBm Note / Test Condition – – Maximum available power gain Insertion power gain Insertion power gain (Off-State) Input return loss Output return loss Minimum noise figure Noise figure in 50 Ω System Input third order intercept point (On-State) 1) Vout = 2.75 V – – RLin RLout NFmin NF50Ω IIP3 ZS = ZSopt ZS = ZL =50 Ω Δf = 1 MHz, PIN = -28 dBm Input power at 1 dB gain compression P-1dB – -24.5 – dBm – 1) IP3 values depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 Ω from 0.1 to 6 GHz 2.2.2 Electrical Characteristics at f = 900 MHz Table 6 Parameter Electrical Characteristics at TA = 25 °C (measured according to Figure 2), VCC = 2.75 V, unless otherwise specified Symbol Min. Gma |S21| |S21| 2 2 Values Typ. 23 18.8 -34 3 14 0.7 0.8 -10 Max. – – – – – – – – – – – – – – – – Unit dB dB dB dB dB dB dB dBm Note / Test Condition – – Maximum available power gain Insertion power gain Insertion power gain (Off-State) Input return loss Output return loss Minimum noise figure Noise figure in 50 Ω System Input third order intercept point (On-State) 1) Vout = 2.75 V – – RLin RLout NFmin NF50Ω IIP3 ZS = ZSopt ZS = ZL =50 Ω Δf = 1 MHz, PIN = -28 dBm Input power at 1 dB gain compression P-1dB – -24 – dBm – 1) IP3 values depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 Ω from 0.1 to 6 GHz Preliminary Data Sheet 9 Revision 1.1, 2009-12-17 BGA628L7 Electrical Characteristics 2.2.3 Electrical Characteristics at f = 1.575 GHz Table 7 Parameter Electrical Characteristics at TA = 25 °C (measured according to Figure 2), VCC = 2.75 V, unless otherwise specified Symbol Min. Gma |S21|2 |S21| 2 Values Typ. 21.5 18 -27 4 11 0.75 0.85 -2 Max. – – – – – – – – – – – – – – – – Unit dB dB dB dB dB dB dB dBm Note / Test Condition – – Maximum available power gain Insertion power gain Insertion power gain (Off-State) Input return loss Output return loss Minimum noise figure Noise figure in 50 Ω System Input third order intercept point (On-State) 1) Vout = 2.75 V – – RLin RLout NFmin NF50Ω IIP3 ZS = ZSopt ZS = ZL =50 Ω Δf = 1 MHz, PIN = -28 dBm Input power at 1 dB gain compression P-1dB – -20.5 – dBm – 1) IP3 values depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 Ω from 0.1 to 6 GHz 2.2.4 Electrical Characteristics at f = 1.9 GHz Table 8 Parameter Electrical Characteristics at TA = 25 °C (measured according to Figure 2), VCC = 2.75 V, unless otherwise specified Symbol Min. Gma |S21| |S21| 2 2 Values Typ. 21.0 17.5 -26 5 10 0.8 0.9 -1 Max. – – – – – – – – – – – – – – – – Unit dB dB dB dB dB dB dB dBm Note / Test Condition – – Maximum available power gain Insertion power gain Insertion power gain (Off-State) Input return loss Output return loss Minimum noise figure Noise figure in 50 Ω System Input third order intercept point1) Vout = 2.75 V – – RLin RLout NFmin NF50Ω IIP3 ZS = ZSopt ZS = ZL =50 Ω Δf = 1 MHz, PIN = -28 dBm Input power at 1 dB gain compression P-1dB – -20 – dBm – 1) IP3 values depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 Ω from 0.1 to 6 GHz Preliminary Data Sheet 10 Revision 1.1, 2009-12-17 BGA628L7 Electrical Characteristics 2.2.5 Electrical Characteristics at f = 2.14 GHz Table 9 Parameter Electrical Characteristics at TA = 25 °C (measured according to Figure 2), VCC = 2.75 V, unless otherwise specified Symbol Min. Values Typ. 20 17 -24 5 10 0.8 0.9 0 Max. – – – – – – – – dB dB dB dB dB dB dB dBm – – – – – – – – 2 Unit Note / Test Condition – – Maximum available power gain Insertion power gain Insertion power gain (Off-State) Input return loss Output return loss Minimum noise figure Noise figure in 50 Ω System Input third order intercept point (On-State) 1) Gma |S21|2 |S21| RLin RLout NFmin NF50Ω IIP3 Vout = 2.75 V – – ZS = ZSopt ZS = ZL =50 Ω Δf = 1 MHz, PIN = -28 dBm Input power at 1 dB gain compression P-1dB – -18.5 – dBm – 1) IP3 values depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 Ω from 0.1 to 6 GHz 2.2.6 Electrical Characteristics at f = 2.4 GHz Table 10 Parameter Electrical Characteristics at TA = 25 °C (measured according to Figure 2), VCC = 2.75 V, unless otherwise specified Symbol Min. Gma |S21| |S21| 2 2 Values Typ. 19 16 -24 6 9 0.8 0.95 2 Max. – – – – – – – – – – – – – – – – Unit dB dB dB dB dB dB dB dBm Note / Test Condition – – Maximum available power gain Insertion power gain Insertion power gain (Off-State) Input return loss Output return loss Minimum noise figure Noise figure in 50 Ω System Input third order intercept point1) Vout = 2.75 V – – RLin RLout NFmin NF50Ω IIP3 ZS = ZSopt ZS = ZL =50 Ω Δf = 1 MHz, PIN = -28 dBm Input power at 1 dB gain compression P-1dB – -17.5 – dBm – 1) IP3 values depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 Ω from 0.1 to 6 GHz Preliminary Data Sheet 11 Revision 1.1, 2009-12-17 BGA628L7 Electrical Characteristics 2.2.7 Electrical Characteristics at f = 3.5 GHz Table 11 Parameter Electrical Characteristics at TA = 25 °C (measured according to Figure 2), VCC = 2.75 V, unless otherwise specified Symbol Min. Gma |S21|2 |S21| 2 Values Typ. 16 13.5 -22 7 8 0.9 1.0 5 Max. – – – – – – – – – – – – – – – – Unit dB dB dB dB dB dB dB dBm Note / Test Condition – – Maximum available power gain Insertion power gain Insertion power gain (Off-State) Input return loss Output return loss Minimum noise figure Noise figure in 50 Ω System Input third order intercept point 1) Vout = 2.75 V – – RLin RLout NFmin NF50Ω IIP3 ZS = ZSopt ZS = ZL =50 Ω Δf = 1 MHz, PIN = -28 dBm Input power at 1 dB gain compression P-1dB – -14.5 – dBm – 1) IP3 values depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 Ω from 0.1 to 6 GHz 2.2.8 Electrical Characteristics at f = 5.5 GHz Table 12 Parameter Electrical Characteristics at TA = 25 °C (measured according to Figure 2), VCC = 2.75 V, unless otherwise specified Symbol Min. Gma |S21| |S21| 2 2 Values Typ. 10 8 -23 8 6 1.1 1.3 9 Max. – – – – – – – – – – – – – – – – Unit dB dB dB dB dB dB dB dBm Note / Test Condition – – Maximum available power gain Insertion power gain Insertion power gain (Off-State) Input return loss Output return loss Minimum noise figure Noise figure in 50 Ω System Input third order intercept point1) Vout = 2.75 V – – RLin RLout NFmin NF50Ω IIP3 ZS = ZSopt ZS = ZL =50 Ω Δf = 1 MHz, PIN = -28 dBm Input power at 1 dB gain compression P-1dB – -11 – dBm – 1) IP3 values depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 Ω from 0.1 to 6 GHz Preliminary Data Sheet 12 Revision 1.1, 2009-12-17 BGA628L7 Application Information 3 Application Information A list of all application notes is available at http://goto.infineon.com/smallsignaldiscretes-appnotes. BGA628 L7_ Application_Board .vsd Figure 3 Drawing of Application Board TOP- Layer CU 35 µm FR4 200 µm Core GND 1 CU 35 µm FR4 800 µm GND 2 CU 35 µm BGA 628L7 _Cross_section.vsd Figure 4 Cross-section of Application Board Preliminary Data Sheet 13 Revision 1.1, 2009-12-17 BGA628L7 Package Information 4 Package Information Top view Bottom view 1.26 ±0.05 0.31 +0.01 -0.02 0.05 MAX. 0.03 A 1.16 ±0.035 1) 0.96 4 5 6 0.05 B B 0.2 MIN. 0.5 ±0.0351) (0.05) 2) 7 3 2 1 Pin 1 marking 0.48 (0.05) 2) 6 x 0.2 ±0.035 1) 0.03 B 1) Dimension applies to plated terminals 2) Dimension of 0.02 MIN. is guaranteed Figure 5 Package Dimensions for TSLP-7-8 SMD 1.21 0.51 0.25 1.21 0.51 0.25 0.45 1.35 0.25 0.23 0.23 Solder mask Vias 0.25 0.23 0.25 Stencil apertures TSLP-7-8-FP V01 6 x 0.2 ±0.035 1) TSLP-7-8-PO V01 A 0.03 B 0.05 A 1.4 ±0.05 1.1 1.35 0.25 0.23 0.25 Copper 0.25 Figure 6 Footprint TSLP-7-8 Type code 0.25 12 Pin 1 Marking Data code TSLP-7-8-MK V01 Figure 7 Marking Layout 14 Revision 1.1, 2009-12-17 Preliminary Data Sheet 0.25 0.45 0.2 0.2 0.2 0.2 BGA628L7 Package Information 4 0.4 1.7 Pin 1 marking 1.6 8 TSLP-7-8-TP V01 Figure 8 Tape & Reel Dimensions (Ø reel 180 mm, pieces/reel 7500) Preliminary Data Sheet 15 Revision 1.1, 2009-12-17 www.infineon.com Published by Infineon Technologies AG