BGA711L7

Data Sheet, V3.2, May 2009 BGA711L7 S i ng l e - B an d U M T S L N A (2100, 1900 MHz) RF & Protection Devices Edition 2009-05-27 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2009. All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BGA711L7 - Low Power Single-Band UMTS LNA BGA711L7 Revision History: 2009-05-27, V3.2 Previous Version: 2008-11-05, V3.1 Page 7 9, 10, 11 18 Subjects (major changes since last revision) Updated DC Characteristics (added limits) Updated footnotes Updated value of C4 at Application Circuit Schematic for band II Data Sheet 3 V3.2, 2009-05-27 BGA711L7 - Low Power Single-Band UMTS LNA Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 1 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 2.10 2.11 2.12 2.13 2.14 2.15 3 3.1 3.2 3.3 3.4 4 4.1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 ESD Integrity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Gain Mode Select Truth Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Switching Times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Supply current and Power gain characteristics; TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Logic Signal Characteristics; TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Measured RF Characteristics UMTS Bands I / IV / X (with reference resistor) . . . . . . . . . . . . . . . . . . 9 Measured RF Characteristics UMTS Bands I / IV / X (without reference resistor) . . . . . . . . . . . . . . . 10 Measured RF Characteristics UMTS Band II (with reference resistor) . . . . . . . . . . . . . . . . . . . . . . . . 11 Measured Performance High Band (Band I) High Gain Mode vs. Frequency . . . . . . . . . . . . . . . . . . 12 Measured Performance High Band (Band I) High Gain Mode vs. Temperature . . . . . . . . . . . . . . . . 13 Measured Performance High Band (Band I) Low Gain Mode vs. Frequency . . . . . . . . . . . . . . . . . . . 14 Measured Performance High Band (Band I) Low Gain Mode vs. Temperature . . . . . . . . . . . . . . . . . 16 Application Circuit and Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UMTS bands I, IV and X Application Circuit Schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UMTS band II Application Circuit Schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Pin Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Application Board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 17 17 18 19 Physical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Package Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Data Sheet 4 V3.2, 2009-05-27 BGA711L7 - Low Power Single-Band UMTS LNA Description 1 Description The BGA711L7 is a low current single-band low noise amplifier MMIC for UMTS bands I, IV and X. The LNA is based upon Infineon’s proprietary and cost-effective SiGe:C technology and comes in a low profile TSLP-7-1 leadless green package. Because the matching is off chip, the 2100 MHz path can be easily converted into a 1900 MHz path by optimizing the input and output matching network. This document specifies the electrical parameters, pinout, application circuit and packaging of the chip. Features • Gain: 17 / -8 dB in high / low gain mode • Noise figure: 1.1 dB in high gain mode • Supply current: 3.6 / 0.5 mA in high / low gain mode • Standby mode (< 2 µA typ.) • Output internally matched to 50 Ω • Inputs pre-matched to 50 Ω • 2 kV HBM ESD protection • Low external component count • Small leadless TSLP-7-1 package (2.0 x 1.3 x 0.39 mm) • Pb-free (RoHS compliant) package TSLP-7-1 package Figure 1 Type BGA711L7 Block diagram of single-band LNA Package TSLP-7-1 Marking B1 Chip T1531 Data Sheet 5 V3.2, 2009-05-27 BGA711L7 - Low Power Single-Band UMTS LNA Electrical Characteristics Absolute Maximum Ratings 2 2.1 Electrical Characteristics Absolute Maximum Ratings Table 1 Parameter Absolute Maximum Ratings Symbol Values Min. Max. 3.6 10 -0.3 -0.3 V mA V V dBm °C °C °C All pins except RF input pin -0.3 Unit Note / Test Condition VCC Supply current ICC Pin voltage VPIN Pin voltage RF Input Pin VRFIN RF input power PRFIN Junction temperature Tj Ambient temperature range TA Storage temperature range Tstg Supply voltage VCC+0.3 0.9 4 150 -30 -65 85 150 2.2 Thermal Resistance Table 2 Parameter Thermal Resistance Symbol Value 240 Unit K/W Note / Test Conditions Thermal resistance junction RthJS to soldering point 2.3 ESD Integrity Table 3 Parameter ESD Integrity Symbol 1) Value (typ.) 2000 Unit V Note / Test Conditions All pins ESD hardness HBM VESD-HBM 1) According to JESD22-A114 Data Sheet 6 V3.2, 2009-05-27 BGA711L7 - Low Power Single-Band UMTS LNA Electrical Characteristics DC Characteristics 2.4 DC Characteristics Table 4 Parameter DC Characteristics, TA = 25 °C Symbol Min. Values Typ. 2.8 3.6 500 0.1 1.5 -0.2 2.8 0.0 5.0 5.0 0.5 0.1 6.0 0.1 6.0 2.0 Max. 3.0 V mA µA µA V V µA µA µA µA VGS VEN VEN and VGS 2.6 Unit Note / Test Condition Supply voltage Supply current high gain mode Supply current low gain mode Supply current standby mode Logic level high Logic level low Logic currents VEN Logic currents VGS VCC ICCHG ICCLG ICCOFF VHI VLO IENL IENH IGSL IGSH 2.5 Gain Mode Select Truth Table Table 5 Truth Table State Bands I, II, IV and X VGS L H L H HG OFF ON STANDBY 1) Control Voltage VEN H H L L LG ON OFF 1) In order to achieve minimum standby current it is encouraged to apply logic low-level at the VGS pin in standby mode although this is not mandatory. Details see section 2.4. 2.6 Switching Times Table 6 Parameter Typical switching times; TA = -30 ... 85 °C Symbol Min. Values Typ. 1 7 Max. µs Switching LG ↔ HG V3.2, 2009-05-27 Unit Note / Test Condition Settling time gainstep Data Sheet tGS BGA711L7 - Low Power Single-Band UMTS LNA Electrical Characteristics Supply current and Power gain characteristics; TA = 25 °C 2.7 Supply current and Power gain characteristics; TA = 25 °C Supply current and Power gain high gain mode versus reference resistor RREF (see Figure 2 on page 17 for reference resistor; low gain mode supply current is independent of reference resistor). Supply Current ICC = f (RREF) VCC = 2.8 V 7 6.5 6 18.5 VCC = 2.8 V 19 Power Gain |S21| = f (RREF) Power Gain [dB] 1 10 100 5.5 18 Icc [mA] 5 4.5 4 3.5 3 2.5 2 17.5 17 16.5 16 10 100 1000 RREF [kΩ] RREF [kΩ] 2.8 Logic Signal Characteristics; TA = 25 °C Current consumption of logic inputs VEN, VGS Logic currents IEN = f (VEN) VCC = 2.8 V 6 Logic currents IGS = f (VGS) VCC = 2.8 V 6 4 4 IEN [µA] 2 IGS [µA] 2 0 0 0.5 1 1.5 2 2.5 3 0 0 0.5 1 1.5 2 2.5 3 VEN [V] V GS [V] Data Sheet 8 V3.2, 2009-05-27 BGA711L7 - Low Power Single-Band UMTS LNA Electrical Characteristics Measured RF Characteristics UMTS Bands I / IV / X (with reference resistor) 2.9 Measured RF Characteristics UMTS Bands I / IV / X (with reference resistor) Table 7 Parameter Typical Characteristics 2100 MHz Band TA = 25 °C, VCC = 2.8 V, RREF = 27 kΩ Symbol Min. 2110 2110 Values Typ. Max. 2170 2155 3.6 0.5 17.0 -7.6 -36 -8 1.1 7.8 -20 -15 -19 -17 >2.3 -8 -2 -2 7 dBm dBm dBm MHz MHz mA mA dB dB dB dB dB dB dB dB dB dB High gain mode Low gain mode High gain mode Low gain mode High gain mode Low gain mode High gain mode Low gain mode 50 Ω, high gain mode 50 Ω, low gain mode 50 Ω, high gain mode 50 Ω, low gain mode DC to 10 GHz; all gain modes High gain mode Low gain mode High gain mode Low gain mode Unit Note / Test Condition Pass band range band I / X Pass band range band IV Current consumption Gain Reverse Isolation Noise figure Input return loss 1) 1) Output return loss Stability factor 2) 1) ICCHG ICCLG S21HG S21LG S12HG S12LG NFHG NFLG S11HG S11LG S22HG S22LG k IP1dBHG IP1dBLG IIP3HG IIP3LG Input compression point1) Inband IIP3 f1 - f2 = 1 MHz Pf1 = Pf2 = -37 dBm 1) 1) Verification based on AQL; not 100% tested in production 2) Guaranteed by device design; not tested in production Data Sheet 9 V3.2, 2009-05-27 BGA711L7 - Low Power Single-Band UMTS LNA Electrical Characteristics Measured RF Characteristics UMTS Bands I / IV / X (without ref. resistor) 2.10 Measured RF Characteristics UMTS Bands I / IV / X (without ref. resistor) Table 8 Parameter Typical Characteristics 2100 MHz Band TA = 25 °C, VCC = 2.8 V, RREF = n/c Symbol Min. 2110 2110 Values Typ. Max. 2170 2155 3.3 0.5 16.7 -7.7 -36 -8 1.1 8.1 -21 -14 -19 -18 >2.3 -8 -2 -2 7 dBm dBm dBm MHz MHz mA mA dB dB dB dB dB dB dB dB dB dB High gain mode Low gain mode High gain mode Low gain mode High gain mode Low gain mode High gain mode Low gain mode 50 Ω, high gain mode 50 Ω, low gain mode 50 Ω, high gain mode 50 Ω, low gain mode DC to 10 GHz; all gain modes High gain mode Low gain mode High gain mode Low gain mode Unit Note / Test Condition Pass band range band I / X Pass band range band IV Current consumption Gain Reverse Isolation Noise figure Input return loss 1) 1) Output return loss Stability factor 2) 1) ICCHG ICCLG S21HG S21LG S12HG S12LG NFHG NFLG S11HG S11LG S22HG S22LG k IP1dBHG IP1dBLG IIP3HG IIP3LG Input compression point1) Inband IIP3 f1 - f2 = 1 MHz Pf1 = Pf2 = -37 dBm 1) 1) Verification based on AQL; not 100% tested in production 2) Guaranteed by device design; not tested in production Data Sheet 10 V3.2, 2009-05-27 BGA711L7 - Low Power Single-Band UMTS LNA Electrical Characteristics Measured RF Characteristics UMTS Band II (with reference resistor) 2.11 Measured RF Characteristics UMTS Band II (with reference resistor) Table 9 Parameter Typical Characteristics 1900 MHz Band TA = 25 °C, VCC = 2.8 V, RREF = 27 kΩ Symbol Min. 1930 Values Typ. 3.6 0.5 17.2 -9.2 -38.6 -9.2 1.1 9.4 -14 -15 -15 -18 >2.2 -7 -3 -3 2 dBm dBm dBm Max. 1990 MHz mA mA dB dB dB dB dB dB dB dB dB dB High gain mode Low gain mode High gain mode Low gain mode High gain mode Low gain mode High gain mode Low gain mode 50 Ω, high gain mode 50 Ω, low gain mode 50 Ω, high gain mode 50 Ω, low gain mode DC to 10 GHz; all gain modes High gain mode Low gain mode High gain mode Low gain mode Unit Note / Test Condition Pass band range band II Current consumption Gain Reverse Isolation Noise figure Input return loss1) Output return loss Stability factor 2) 1) 1) ICCHG ICCLG S21HG S21LG S12HG S12LG NFHG NFLG S11HG S11LG S22HG S22LG k IP1dBHG IP1dBLG IIP3HG IIP3LG Input compression point1) Inband IIP3 f1 - f2 = 1 MHz Pf1 = Pf2 = -37 dBm 1) 1) Verification based on AQL; not 100% tested in production 2) Guaranteed by device design; not tested in production Data Sheet 11 V3.2, 2009-05-27 BGA711L7 - Low Power Single-Band UMTS LNA Electrical Characteristics Measured Performance High Band (Band I) High Gain Mode vs. Frequency 2.12 Measured Performance High Band (Band I) High Gain Mode vs. Frequency TA = 25 °C, VCC = 2.8 V, VGS = 2.8 V, VEN = 2.8 V, RREF = 27 kΩ Power Gain |S21| = f ( f ) Power Gain wideband |S21| = f ( f ) 20 20 10 19 0 Power Gain [dB] Power Gain [dB] 18 −30°C −10 −20 −30 −40 17 25°C 85°C 16 −50 15 2.11 −60 2.12 2.13 2.14 2.15 2.16 2.17 0 2 4 6 8 Frequency [GHz] Frequency [GHz] Matching |S11| = f ( f ), |S22| = f ( f ) Gainstep HG-LG |∆S21| = f ( f ) 0 26 −5 25.5 |S11|, |S22| [dB] −15 S −20 S11 −25 22 Delta Gain [dB] −10 25 25°C 24.5 85°C −30°C −30 2.11 2.12 2.13 2.14 2.15 2.16 2.17 24 2.11 2.12 2.13 2.14 2.15 2.16 2.17 Frequency [GHz] Frequency [GHz] Data Sheet 12 V3.2, 2009-05-27 BGA711L7 - Low Power Single-Band UMTS LNA Electrical Characteristics Measured Performance High Band (Band I) High Gain Mode vs. Temperature Noise Figure NF = f ( f ) Input Compression P1dB = f ( f ) 1.6 1.5 1.4 0 −2 −4 P1dB [dBm] 2.12 2.13 2.14 2.15 2.16 2.17 1.3 NF [dB] −6 −8 −10 −12 −14 2.11 1.2 1.1 1 0.9 0.8 2.11 2.12 2.13 2.14 2.15 2.16 2.17 Frequency [GHz] Frequency [GHz] 2.13 Measured Performance High Band (Band I) High Gain Mode vs. Temperature VCC = 2.8 V, VGS = 2.8 V, VEN = 2.8 V, f = 2140 MHz, RREF = 27 kΩ Power Gain |S21| = f (TA) Supply Current ICC = f (TA) 20 5 19 4.5 Power Gain [dB] 4 ICC [mA] −20 0 20 A 18 3.5 17 3 16 2.5 15 −40 40 60 80 100 2 −40 −20 0 20 40 60 80 100 T [°C] TA [°C] Data Sheet 13 V3.2, 2009-05-27 BGA711L7 - Low Power Single-Band UMTS LNA Electrical Characteristics Measured Performance High Band (Band I) Low Gain Mode vs. Frequency Noise Figure NF = f (TA) Input Compression P1dB = f (TA) 1.8 0 −2 −4 1.6 1.4 P1dB [dBm] −20 0 20 40 60 80 100 NF [dB] −6 −8 −10 1.2 1 0.8 −12 −14 −40 0.6 −40 −20 0 20 40 60 80 100 TA [°C] TA [°C] 2.14 Measured Performance High Band (Band I) Low Gain Mode vs. Frequency TA = 25 °C, VCC = 2.8 V, VGS = 0 V, VEN = 2.8 V, RREF = 27 kΩ Power Gain |S21| = f ( f ) Power Gain wideband |S21| = f ( f ) −5 0 −6 −30°C −10 Power Gain [dB] Power Gain [dB] −7 −20 25°C −8 85°C −30 −9 −40 −10 −50 −11 2.11 2.12 2.13 2.14 2.15 2.16 2.17 −60 0 2 4 6 8 Frequency [GHz] Frequency [GHz] Data Sheet 14 V3.2, 2009-05-27 BGA711L7 - Low Power Single-Band UMTS LNA Electrical Characteristics Measured Performance High Band (Band I) Low Gain Mode vs. Frequency Matching |S11| = f ( f ), |S22| = f ( f ) 0 −5 |S11|, |S22| [dB] −10 S −15 S −20 22 11 −25 −30 2.11 2.12 2.13 2.14 2.15 2.16 2.17 Frequency [GHz] Noise Figure NF = f ( f ) Input Compression P1dB = f ( f ) 11 4 2 0 10 9 P1dB [dBm] 2.12 2.13 2.14 2.15 2.16 2.17 NF [dB] −2 −4 −6 8 7 6 −8 −10 2.11 5 2.11 2.12 2.13 2.14 2.15 2.16 2.17 Frequency [GHz] Frequency [GHz] Data Sheet 15 V3.2, 2009-05-27 BGA711L7 - Low Power Single-Band UMTS LNA Electrical Characteristics Measured Performance High Band (Band I) Low Gain Mode vs. Temperature 2.15 Measured Performance High Band (Band I) Low Gain Mode vs. Temperature VCC = 2.8 V, VGS = 0 V, VEN = 2.8 V, f = 2140 MHz, RREF = 27 kΩ Power Gain |S21| = f (TA) Supply Current ICC = f (TA) −5 0.7 0.65 0.6 −6 Power Gain [dB] −7 0.55 −8 ICC [mA] −20 0 20 40 60 80 100 0.5 0.45 −9 0.4 −10 0.35 0.3 −40 −11 −40 −20 0 20 40 60 80 100 TA [°C] TA [°C] Noise Figure NF = f (TA) Input Compression P1dB = f (TA) 4 2 11 10 0 P1dB [dBm] 9 NF [dB] −2 −4 −6 −8 −10 −40 8 7 6 5 −40 −20 0 20 40 60 80 100 −20 0 20 A 40 60 80 100 TA [°C] T [°C] Data Sheet 16 V3.2, 2009-05-27 BGA711L7 - Low Power Single-Band UMTS LNA Application Circuit and Block Diagram UMTS bands I, IV and X Application Circuit Schematic 3 3.1 Application Circuit and Block Diagram UMTS bands I, IV and X Application Circuit Schematic RFIN 2100 MHz C1 10pF L1 2nH 1 RFIN 6 RFOUT RFOUT 2100 MHz C2 100 pF VEN = 0 / 2.8 V 2 VEN Biasing & Logic Circuitry 5 RREF RREF 27 k Ω VGS = 0 / 2.8 V 3 VGS 7 GND 4 VCC VCC = 2.8 V C3 10nF BGA 711L7 _Appl _BlD_RREF.vsd Figure 2 Application circuit with chip outline (top view) Note: Package paddle (Pin 0) has to be RF grounded. Table 10 L1 C1 ... C3 RREF Parts List Part Type Chip inductor Chip capacitor Chip resistor Manufacturer Various Various Various Size 0402 0402 0402 Comment Wirewound, Q ≈ 50 Part Number Data Sheet 17 V3.2, 2009-05-27 BGA711L7 - Low Power Single-Band UMTS LNA Application Circuit and Block Diagram UMTS band II Application Circuit Schematic 3.2 UMTS band II Application Circuit Schematic RFIN 1900 MHz C1 10pF L1 2.7nH 1 RFIN 6 RFOUT L2 2.7nH C4 1.2pF RFOUT 1900 MHz C2 100pF VEN = 0 / 2.8 V 2 VEN Biasing & Logic Circuitry 5 RREF RREF 27k Ω VGS = 0 / 2.8 V 3 VGS 7 GND 4 VCC VCC = 2.8 V C3 10nF BGA711L7_Appl _BlD_RREF_BandII.vsd Figure 3 Application circuit with chip outline (top view) Note: Package paddle (Pin 0) has to be RF grounded. Table 11 L1, L2 C1 ... C4 RREF Parts List Part Type Chip inductor Chip capacitor Chip resistor Manufacturer Various Various Various Size 0402 0402 0402 Comment Wirewound, Q ≈ 50 Part Number 3.3 Pin Definition Table 12 Pin Number 1 2 3 4 5 6 7 Pin Definition and Function Symbol RFIN VEN VGS VCC RREF RFOUT GND Function LNA input (2100/1900 MHz) Band select control Gain step control Supply voltage Bias current reference resistor (high gain mode) LNA output (2100/1900 MHz) Package paddle; ground connection for LNA and control circuitry Data Sheet 18 V3.2, 2009-05-27 BGA711L7 - Low Power Single-Band UMTS LNA Application Circuit and Block Diagram Application Board 3.4 Application Board Figure 4 Application board layout on 3-layer FR4. Top layer thickness: 0.2 mm, bottom layer thickness: 0.8 mm, 17 µm Cu metallization, gold plated. Board size: 21 x 19 mm Figure 5 Cross-section view of application board Data Sheet 19 V3.2, 2009-05-27 BGA711L7 - Low Power Single-Band UMTS LNA Application Circuit and Block Diagram Application Board Figure 6 Detail of application board layout Note: In order to achieve the same performance as given in this datasheet please follow the suggested PCB-layout as closely as possible. The position of the GND vias is critical for RF performance. Data Sheet 20 V3.2, 2009-05-27 BGA711L7 - Low Power Single-Band UMTS LNA Physical Characteristics Package Dimensions 4 4.1 Physical Characteristics Package Dimensions NSMD 0.2 0.2 0.2 SMD 1.4 1.4 1.4 0.2 0.2 1.9 0.25 1.4 0.2 0.25 0.2 1.9 1.9 0.2 0.25 1.9 0.2 0.2 0.2 0.2 0.3 0.3 Copper 0.3 0.25 Stencil apertures R0.1 0.3 0.3 Copper 0.3 0.2 0.25 0.25 0.25 Stencil apertures R0.1 Solder mask Solder mask TSLP-7-1-FP V01 Figure 7 Recommended footprint and stencil layout for the TSLP-7-1 package Top view 0.4 0.05 MAX. +0.1 Bottom view 1.3 ±0.05 1 ±0.05 4 5 6 1.7 ±0.05 6 x 0.2 ±0.035 1) 7 3 Pin 1 marking 2 1 6 x 0.2 ±0.035 1) TSLP-7-1-PO V04 1) Dimension applies to plated terminal Figure 8 Package outline (top, side and bottom view) 4 0.5 2.18 Pin 1 marking 1.45 TSLP-7-1-TP V03 Figure 9 Tape & Reel Dimensions Data Sheet 21 8 2 ±0.05 1.2 ±0.035 1) 1.1 ±0.035 1) V3.2, 2009-05-27 0.2 0.25 BGA711L7 - Low Power Single-Band UMTS LNA Physical Characteristics Package Dimensions Figure 10 Marking Layout Data Sheet 22 V3.2, 2009-05-27 www.infineon.com Published by Infineon Technologies AG