BGA734L16

Data Sheet, V1.0, January 2008 BGA734L16 Low Power Tri-Band UMTS LNA (2100, 1900, 800 MHz) RF & Protection Devices Edition 2008-01-25 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2009. All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BGA734L16 - Low Power Tri-Band UMTS LNA BGA734L16 Revision History: 2008-01-25, V1.0 Previous Version: V1.2, 2007-07-18 Page 8-10 8-10 Subjects (major changes since last revision) Improved low gain mode IIP3 Improved low gain mode P1dB Data Sheet 3 V1.0, 2008-01-25 BGA734L16 - Low Power Tri-Band UMTS LNA Description 1 Description The BGA734L16 is a highly flexible tri-band (2100, 1900, 850/800 MHz) low noise amplifier MMIC for worldwide use. Based on Infineon’s proprietary and cost-effective SiGe:C technology, the BGA734L16 features dynamic gain control, temperature stabilization, standby mode, and 1 kV ESD protection on-chip and matching off chip. Because the matching is off chip, the 1900 MHz path can be converted into a 2100 MHz path and vice versa by optimizing the input and output matching network. This document specifies device performance for the most common band combination - UMTS bands I, II, and V. Features • Gain: 15 / -8 dB in high / low gain • Noise figure: 1.2 dB in high gain mode • Low Band (5, 6, 8, FOMA800) • Mid Band (2, 3, 9, FOMA1700) • High Band (1, 4, 10) • High and low gain modes support • Supply current: 3.5 / 0.65 mA in high / low gain modes • Standby mode (2.1 -12 -6 -6 5 dBm dBm dBm MHz dBm mA mA dB dB dB dB dB dB dB dB dB dB High gain mode Low gain mode High gain mode Low gain mode High gain mode Low gain mode High gain mode Low gain mode 50 Ω, high gain mode 50 Ω, low gain mode 50 Ω, high gain mode 50 Ω, low gain mode DC to 10 GHz; all gain modes High gain mode Low gain mode High gain mode Low gain mode Unit Note / Test Condition Pass band range Input power range Current consumption Gain Reverse Isolation Noise figure Input return loss 1) 1) Output return loss Stability factor 2) 1) ICCHG ICCLG S21HG S21LG S12HG S12LG NFHG NFLG S11HG S11LG S22HG S22LG k IP1dBHG IP1dBLG IIP3HG IIP3LG Input compression point1) Inband IIP3 f1 - f2 = 1 MHz Pf1 = Pf2 = -25 dBm 1) 1) Verified by random sampling; not 100% RF tested 2) Not tested in production; guaranteed by device design Data Sheet 8 V1.0, 2008-01-25 BGA734L16 - Low Power Tri-Band UMTS LNA Electrical Characteristics Measured RF Characteristics Mid Band (UMTS Band II) 2.9 Measured RF Characteristics Mid Band (UMTS Band II) Table 9 Parameter Typical Characteristics 1900 MHz Band, TA = 25 °C, VCC = 2.8 V Symbol Min. 1930 -100 Values Typ. Max. 1990 0 3.4 0.65 16.5 -6.9 -35 -7 1.0 6.8 -13 -12 -20 -17 >2.0 -10 -4 -5 6 dBm dBm dBm MHz dBm mA mA dB dB dB dB dB dB dB dB dB dB High gain mode Low gain mode High gain mode Low gain mode High gain mode Low gain mode High gain mode Low gain mode 50 Ω, high gain mode 50 Ω, low gain mode 50 Ω, high gain mode 50 Ω, low gain mode DC to 10 GHz; all gain modes High gain mode Low gain mode High gain mode Low gain mode Unit Note / Test Condition Pass band range Input power range Current consumption Gain Reverse Isolation Noise figure Input return loss 1) 1) Output return loss Stability factor 2) 1) ICCHG ICCLG S21HG S21LG S12HG S12LG NFHG NFLG S11HG S11LG S22HG S22LG k IP1dBHG IP1dBLG IIP3HG IIP3LG Input compression point1) Inband IIP3 f1 - f2 = 1 MHz Pf1 = Pf2 = -26 dBm 1) 1) Verified by random sampling; not 100% RF tested 2) Not tested in production; guaranteed by device design Data Sheet 9 V1.0, 2008-01-25 BGA734L16 - Low Power Tri-Band UMTS LNA Electrical Characteristics Measured RF Characteristics High Band (UMTS Band I) 2.10 Measured RF Characteristics High Band (UMTS Band I) Table 10 Parameter Typical Characteristics 2100 MHz Band, TA = 25 °C, VCC = 2.8 V Symbol Min. 2110 -100 Values Typ. Max. 2170 0 3.5 0.65 16.5 -7.7 -36 -8 1.1 7.4 -13 -27 -18 -9 >1.8 -11 -4 -6 7 dBm dBm dBm MHz dBm mA mA dB dB dB dB dB dB dB dB dB dB High gain mode Low gain mode High gain mode Low gain mode High gain mode Low gain mode High gain mode Low gain mode 50 Ω, high gain mode 50 Ω, low gain mode 50 Ω, high gain mode 50 Ω, low gain mode DC to 10 GHz; all gain modes High gain mode Low gain mode High gain mode Low gain mode Unit Note / Test Condition Pass band range Input power range Current consumption Gain Reverse Isolation Noise figure Input return loss 1) 1) Output return loss Stability factor 2) 1) ICCHG ICCLG S21HG S21LG S12HG S12LG NFHG NFLG S11HG S11LG S22HG S22LG k IP1dBHG IP1dBLG IIP3HG IIP3LG Input compression point1) Inband IIP3 f1 - f2 = 1 MHz Pf1 = Pf2 = -27 dBm 1) 1) Verified by random sampling; not 100% RF tested 2) Not tested in production; guaranteed by device design Data Sheet 10 V1.0, 2008-01-25 BGA734L16 - Low Power Tri-Band UMTS LNA Electrical Characteristics Measured Performance Low Band High Gain Mode vs. Frequency 2.11 Measured Performance Low Band High Gain Mode vs. Frequency TA = 25 °C, VCC = 2.8 V, VGS = 2.8 V, VEN1 = 0 V, VEN2 = 2.8 V Power Gain |S21| = f ( f ) Power Gain Wideband |S21| = f ( f ) 18 17.5 17 20 10 Power Gain [dB] Power Gain [dB] 0.9 16.5 −30°C 0 16 15.5 15 14.5 14 13.5 13 0.86 0.87 0.88 0.89 85°C 25°C −10 −20 −30 −40 0 2 4 6 8 Frequency [GHz] Frequency [GHz] Matching |S11| = f ( f ), |S22| = f ( f ) Gainstep HG - LG |∆S21| = f ( f ) 0 −5 −10 −15 −20 −25 −30 −35 −40 0.86 S 22 24 23.5 23 Delta Gain [dB] |S11|, |S22| [dB] S 11 22.5 −30°C 22 21.5 21 20.5 20 0.86 25°C 85°C 0.87 0.88 0.89 0.9 0.87 0.88 0.89 0.9 Frequency [GHz] Frequency [GHz] Data Sheet 11 V1.0, 2008-01-25 BGA734L16 - Low Power Tri-Band UMTS LNA Electrical Characteristics Measured Performance Low Band High Gain Mode vs. Temperature Noise Figure NF = f ( f ) Input Compression P1dB = f ( f ) 1.5 1.4 −8 −9 1.3 1.2 1.1 1 0.9 0.8 −13 0.7 0.6 0.86 0.87 0.88 0.89 0.9 −14 0.86 0.87 0.88 0.89 0.9 −10 P1dB [dBm] Frequency [GHz] NF [dB] −11 −12 Frequency [GHz] 2.12 Measured Performance Low Band High Gain Mode vs. Temperature VCC = 2.8 V, VGS = 2.8 V, VEN1 = 0 V, VEN2 = 2.8 V Power Gain |S21| = f (TA) Supply Current ICC = f (TA) 19 4 3.9 18 3.8 3.7 Power Gain [dB] 17 16 ICC [mA] −20 0 20 A 3.6 3.5 3.4 3.3 3.2 3.1 15 14 13 −40 40 60 80 100 3 −40 −20 0 20 A 40 60 80 100 T [°C] T [°C] Data Sheet 12 V1.0, 2008-01-25 BGA734L16 - Low Power Tri-Band UMTS LNA Electrical Characteristics Measured Performance Low Band Low Gain Mode vs. Frequency Noise Figure NF = f (TA) Input Compression P1dB = f (TA) 1.8 1.6 1.4 −4 −6 −8 NF [dB] 1.2 1 0.8 0.6 0.4 −40 P1dB [dBm] −20 0 20 40 60 80 100 −10 −12 −14 −16 −40 −20 0 20 40 60 80 100 TA [°C] TA [°C] 2.13 Measured Performance Low Band Low Gain Mode vs. Frequency TA = 25 °C, VCC = 2.8 V, VGS = 0 V, VEN1 = 0 V, VEN2 = 2.8 V Power Gain |S21| = f ( f ) Power Gain Wideband |S21| = f ( f ) −5 −5.5 −6 0 −10 −30°C Power Gain [dB] Power Gain [dB] 0.9 −6.5 25°C −20 −7 85°C −30 −7.5 −8 −8.5 −9 0.86 −40 −50 0.87 0.88 0.89 −60 0 2 4 6 8 Frequency [GHz] Frequency [GHz] Data Sheet 13 V1.0, 2008-01-25 BGA734L16 - Low Power Tri-Band UMTS LNA Electrical Characteristics Measured Performance Low Band Low Gain Mode vs. Frequency Matching |S11| = f ( f ), |S22| = f ( f ) Noise Figure NF = f ( f ) 0 −5 −10 S 22 9 8.5 8 7.5 |S11|, |S22| [dB] −15 −20 −25 −30 −35 −40 0.86 NF [dB] 0.9 S 11 7 6.5 6 5.5 5 0.86 0.87 0.88 0.89 0.87 0.88 0.89 0.9 Frequency [GHz] Frequency [GHz] Input Compression P1dB = f ( f ) −2 −3 −4 P1dB [dBm] −5 −6 −7 −8 0.86 0.87 0.88 0.89 0.9 Frequency [GHz] Data Sheet 14 V1.0, 2008-01-25 BGA734L16 - Low Power Tri-Band UMTS LNA Electrical Characteristics Measured Performance Low Band Low Gain Mode vs. Temperature 2.14 Measured Performance Low Band Low Gain Mode vs. Temperature VCC = 2.8 V, VGS = 0 V, VEN1 = 0 V, VEN2 = 2.8 V Power Gain |S21| = f (TA) Supply Current ICC = f (TA) −5 −5.5 −6 0.8 0.75 Power Gain [dB] −6.5 0.7 −7.5 −8 −8.5 −9 −9.5 −10 −40 −20 0 20 40 60 80 100 ICC [mA] −7 0.65 0.6 0.55 0.5 −40 −20 0 20 40 60 80 100 TA [°C] TA [°C] Noise Figure NF = f (TA) Input Compression P1dB = f (TA) 10 9.5 9 8.5 0 −1 −2 −3 NF [dB] 8 7.5 7 6.5 6 5.5 5 −40 −20 0 20 A P1dB [dBm] 40 60 80 100 −4 −5 −6 −7 −8 −9 −10 −40 −20 0 20 A 40 60 80 100 T [°C] T [°C] Data Sheet 15 V1.0, 2008-01-25 BGA734L16 - Low Power Tri-Band UMTS LNA Electrical Characteristics Measured Performance Mid Band High Gain Mode vs. Frequency 2.15 Measured Performance Mid Band High Gain Mode vs. Frequency TA = 25 °C, VCC = 2.8 V, VGS = 2.8 V, VEN1 = 2.8 V, VEN2 = 0 V Power Gain |S21| = f ( f ) Power Gain Wideband |S21| = f ( f ) 18 17.5 17 −30°C 20 10 Power Gain [dB] Power Gain [dB] 16.5 25°C 0 16 15.5 85°C −10 15 14.5 14 13.5 13 1.93 1.94 1.95 1.96 1.97 1.98 1.99 −20 −30 −40 0 2 4 6 8 Frequency [GHz] Frequency [GHz] Matching |S11| = f ( f ), |S22| = f ( f ) Gainstep HG - LG |∆S21| = f ( f ) 0 −5 −10 −15 −20 −25 −30 −35 −40 1.93 26 25.5 25 Delta Gain [dB] |S11|, |S22| [dB] S11 S 22 24.5 24 −30°C 23.5 25°C 23 22.5 22 1.93 85°C 1.94 1.95 1.96 1.97 1.98 1.99 1.94 1.95 1.96 1.97 1.98 1.99 Frequency [GHz] Frequency [GHz] Data Sheet 16 V1.0, 2008-01-25 BGA734L16 - Low Power Tri-Band UMTS LNA Electrical Characteristics Measured Performance Mid Band High Gain Mode vs. Temperature Noise Figure NF = f ( f ) Input Compression P1dB = f ( f ) 1.5 1.4 −8 −9 1.3 1.2 1.1 1 0.9 0.8 −13 0.7 0.6 1.93 1.94 1.95 1.96 1.97 1.98 1.99 −14 1.93 1.94 1.95 1.96 1.97 1.98 1.99 −10 P1dB [dBm] Frequency [GHz] NF [dB] −11 −12 Frequency [GHz] 2.16 Measured Performance Mid Band High Gain Mode vs. Temperature VCC = 2.8 V, VGS = 2.8 V, VEN1 = 2.8 V, VEN2 = 0 V Power Gain |S21| = f (TA) Supply Current ICC = f (TA) 19 4 3.9 18 3.8 3.7 Power Gain [dB] 17 16 ICC [mA] −20 0 20 A 3.6 3.5 3.4 3.3 3.2 3.1 15 14 13 −40 40 60 80 100 3 −40 −20 0 20 A 40 60 80 100 T [°C] T [°C] Data Sheet 17 V1.0, 2008-01-25 BGA734L16 - Low Power Tri-Band UMTS LNA Electrical Characteristics Measured Performance Mid Band Low Gain Mode vs. Frequency Noise Figure NF = f (TA) Input Compression P1dB = f (TA) 1.8 1.6 1.4 −4 −6 −8 NF [dB] 1.2 1 0.8 0.6 0.4 −40 P1dB [dBm] −20 0 20 40 60 80 100 −10 −12 −14 −16 −40 −20 0 20 40 60 80 100 TA [°C] TA [°C] 2.17 Measured Performance Mid Band Low Gain Mode vs. Frequency TA = 25 °C, VCC = 2.8 V, VGS = 0 V, VEN1 = 2.8 V, VEN2 = 0 V Power Gain |S21| = f ( f ) Power Gain Wideband |S21| = f ( f ) −5 −5.5 −6 0 −10 −30°C Power Gain [dB] Power Gain [dB] −6.5 25°C −20 −7 85°C −30 −7.5 −8 −8.5 −9 1.93 −40 −50 1.94 1.95 1.96 1.97 1.98 1.99 −60 0 2 4 6 8 Frequency [GHz] Frequency [GHz] Data Sheet 18 V1.0, 2008-01-25 BGA734L16 - Low Power Tri-Band UMTS LNA Electrical Characteristics Measured Performance Mid Band Low Gain Mode vs. Frequency Matching |S11| = f ( f ), |S22| = f ( f ) Noise Figure NF = f ( f ) 0 −5 −10 S S 11 9 8.5 8 7.5 |S11|, |S22| [dB] −15 −20 −25 −30 −35 −40 1.93 NF [dB] 22 7 6.5 6 5.5 5 1.93 1.94 1.95 1.96 1.97 1.98 1.99 1.94 1.95 1.96 1.97 1.98 1.99 Frequency [GHz] Frequency [GHz] Input Compression P1dB = f ( f ) −2 −3 −4 P1dB [dBm] −5 −6 −7 −8 1.93 1.94 1.95 1.96 1.97 1.98 1.99 Frequency [GHz] Data Sheet 19 V1.0, 2008-01-25 BGA734L16 - Low Power Tri-Band UMTS LNA Electrical Characteristics Measured Performance Mid Band Low Gain Mode vs. Temperature 2.18 Measured Performance Mid Band Low Gain Mode vs. Temperature VCC = 2.8 V, VGS = 0 V, VEN1 = 2.8 V, VEN2 = 0 V Noise Figure NF = f (TA) Input Compression P1dB = f (TA) 10 9.5 9 8.5 0 −1 −2 −3 NF [dB] 8 7.5 7 6.5 6 5.5 5 −40 −20 0 20 40 60 80 100 P1dB [dBm] −4 −5 −6 −7 −8 −9 −10 −40 −20 0 20 40 60 80 100 TA [°C] TA [°C] Data Sheet 20 V1.0, 2008-01-25 BGA734L16 - Low Power Tri-Band UMTS LNA Electrical Characteristics Measured Performance High Band High Gain Mode vs. Frequency 2.19 Measured Performance High Band High Gain Mode vs. Frequency TA = 25 °C, VCC = 2.8 V, VGS = 2.8 V, VEN1 = 2.8 V, VEN2 = 2.8 V Power Gain |S21| = f ( f ) Power Gain Wideband |S21| = f ( f ) 18 17.5 −30°C 20 17 10 Power Gain [dB] Power Gain [dB] 16.5 25°C 0 16 15.5 15 14.5 14 13.5 13 2.11 85°C −10 −20 −30 −40 2.12 2.13 2.14 2.15 2.16 2.17 0 2 4 6 8 Frequency [GHz] Frequency [GHz] Matching |S11| = f ( f ), |S22| = f ( f ) Gainstep HG - LG |∆S21| = f ( f ) 0 −5 −10 28 27.5 27 S 26.5 −15 −20 −25 −30 −35 −40 2.11 S22 Delta Gain [dB] |S11|, |S22| [dB] 11 26 25.5 25 24.5 −30°C 24 23.5 23 22.5 25°C 85°C 2.12 2.13 2.14 2.15 2.16 2.17 22 2.11 2.12 2.13 2.14 2.15 2.16 2.17 Frequency [GHz] Frequency [GHz] Data Sheet 21 V1.0, 2008-01-25 BGA734L16 - Low Power Tri-Band UMTS LNA Electrical Characteristics Measured Performance High Band High Gain Mode vs. Temperature Noise Figure NF = f ( f ) Input Compression P1dB = f ( f ) 1.5 1.4 −8 −9 1.3 1.2 1.1 1 0.9 0.8 −13 0.7 0.6 2.11 2.12 2.13 2.14 2.15 2.16 2.17 −14 2.11 2.12 2.13 2.14 2.15 2.16 2.17 −10 P1dB [dBm] Frequency [GHz] NF [dB] −11 −12 Frequency [GHz] 2.20 Measured Performance High Band High Gain Mode vs. Temperature VCC = 2.8 V, VGS = 2.8 V, VEN1 = 2.8 V, VEN2 = 2.8 V Power Gain |S21| = f (TA) Supply Current ICC = f (TA) 19 4 3.9 18 3.8 3.7 Power Gain [dB] 17 16 ICC [mA] −20 0 20 A 3.6 3.5 3.4 3.3 3.2 3.1 15 14 13 −40 40 60 80 100 3 −40 −20 0 20 A 40 60 80 100 T [°C] T [°C] Data Sheet 22 V1.0, 2008-01-25 BGA734L16 - Low Power Tri-Band UMTS LNA Electrical Characteristics Measured Performance High Band Low Gain Mode vs. Frequency Noise Figure NF = f (TA) Input Compression P1dB = f (TA) 1.8 1.6 1.4 −4 −6 −8 NF [dB] 1.2 1 0.8 0.6 0.4 −40 P1dB [dBm] −20 0 20 40 60 80 100 −10 −12 −14 −16 −40 −20 0 20 40 60 80 100 TA [°C] TA [°C] 2.21 Measured Performance High Band Low Gain Mode vs. Frequency TA = 25 °C, VCC = 2.8 V, VGS = 0 V, VEN1 = 2.8 V, VEN2 = 2.8 V Power Gain |S21| = f ( f ) Power Gain Wideband |S21| = f ( f ) −5 −5.5 −6 0 −10 Power Gain [dB] Power Gain [dB] −6.5 −7 −7.5 −8 −8.5 −9 2.11 −30°C 25°C −20 −30 −40 85°C −50 2.12 2.13 2.14 2.15 2.16 2.17 −60 0 2 4 6 8 Frequency [GHz] Frequency [GHz] Data Sheet 23 V1.0, 2008-01-25 BGA734L16 - Low Power Tri-Band UMTS LNA Electrical Characteristics Measured Performance High Band Low Gain Mode vs. Frequency Matching |S11| = f ( f ), |S22| = f ( f ) Noise Figure NF = f ( f ) 0 −5 S −10 22 9 8.5 8 7.5 |S11|, |S22| [dB] −15 −20 S11 −25 −30 −35 −40 2.11 NF [dB] 7 6.5 6 5.5 5 2.11 2.12 2.13 2.14 2.15 2.16 2.17 2.12 2.13 2.14 2.15 2.16 2.17 Frequency [GHz] Frequency [GHz] Input Compression P1dB = f ( f ) −2 −3 −4 P1dB [dBm] −5 −6 −7 −8 2.11 2.12 2.13 2.14 2.15 2.16 2.17 Frequency [GHz] Data Sheet 24 V1.0, 2008-01-25 BGA734L16 - Low Power Tri-Band UMTS LNA Electrical Characteristics Measured Performance High Band Low Gain Mode vs. Temperature 2.22 Measured Performance High Band Low Gain Mode vs. Temperature VCC = 2.8 V, VGS = 0 V, VEN1 = 2.8 V, VEN2 = 2.8 V Power Gain |S21| = f (TA) Supply Current ICC = f (TA) −5 −5.5 −6 0.8 0.75 Power Gain [dB] −6.5 0.7 −7.5 −8 −8.5 −9 −9.5 −10 −40 −20 0 20 40 60 80 100 ICC [mA] −7 0.65 0.6 0.55 0.5 −40 −20 0 20 40 60 80 100 TA [°C] TA [°C] Noise Figure NF = f (TA) Input Compression P1dB = f (TA) 10 9.5 9 8.5 0 −1 −2 −3 NF [dB] 8 7.5 7 6.5 6 5.5 5 −40 −20 0 20 A P1dB [dBm] 40 60 80 100 −4 −5 −6 −7 −8 −9 −10 −40 −20 0 20 A 40 60 80 100 T [°C] T [°C] Data Sheet 25 V1.0, 2008-01-25 BGA734L16 - Low Power Tri-Band UMTS LNA Application Circuit and Block Diagram UMTS bands I, II and V Application Circuit Schematic 3 3.1 Application Circuit and Block Diagram UMTS bands I, II and V Application Circuit Schematic VCC= 2.8 V C7 10nF 0 GND 5 n/c 4 RFGNDH 3 VCC VGS= 0 / 2.8 V 2 VGS n/c 1 RFIN 1900 MHz C1 10pF L1 RFINM L1 3.9nH 3.9nH 6 16 RFOUTM RFOUT 1900 MHz C2 22pF RFIN 2100 MHz C3 10pF L2 2.7nH C4 22pF 7 RFINH 15 RFOUTH RFOUT 2100 MHz 8 RFGNDM 14 RFOUTL RFOUT 800 MHz Biasing & Logic Circuitry 9 n/c 10 RFINL 11 VEN2 12 VEN1 n/c 13 C5 3.0pF RFIN 800 MHz C6 22pF L3 9.1nH VEN= 0 / 2.8 V VEN= 0 / 2.8 V Figure 2 Application circuit with chip outline (top view) Note: Package paddle (Pin 0) has to be RF grounded. Table 11 L1 ... L3 C1 ... C7 Parts List Part Type Chip inductor Chip capacitor Manufacturer Various Various Size 0402 0402 Comment Wirewound, Q ≈ 50 Part Number Data Sheet 26 V1.0, 2008-01-25 BGA734L16 - Low Power Tri-Band UMTS LNA Application Circuit and Block Diagram Pin Definition 3.2 Pin Definition Table 12 Pin Number 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Pin Definition and Function Symbol GND n/c VGS VCC RFGNDH n/c RFINM RFINH RFGNDM n/c RFINL VEN2 VEN1 n/c RFOUTL RFOUTH RFOUTM Function Ground connection for low band (800 MHz) LNA and control circuity (package paddle) Not connected Gain step control Supply voltage High band (2100 MHz) LNA emitter ground Not connected Mid band (1900 MHz) LNA input High band (2100 MHz) LNA input Mid band (1900 MHz) LNA emitter ground Not connected Low band (800 MHz) LNA input Band select control Band select control Not connected Low band (800 MHz) LNA output High band (2100 MHz) LNA output Mid band (1900 MHz) LNA output Data Sheet 27 V1.0, 2008-01-25 BGA734L16 - Low Power Tri-Band UMTS LNA Application Circuit and Block Diagram Application Board 3.3 Application Board Top layer (top view) Middle layer (top view) Bottom layer (top view) Figure 3 Application board layout on 3-layer FR4. Top layer thickness: 0.2 mm, bottom layer thickness: 0.8 mm, 35 µm Cu metallization, gold plated. Board size: 21 x 50 mm 0.017 mm 0.100 mm 0.100 mm 0.035 mm Copper Prepreg FR4 Prepreg FR4 Copper 0.460 mm FR4 0.100 mm 0.100 mm 0.017 mm Prepreg FR4 Prepreg FR4 Copper Figure 4 Cross-section view of application board Data Sheet 28 V1.0, 2008-01-25 BGA734L16 - Low Power Tri-Band UMTS LNA Application Circuit and Block Diagram Application Board RFGNDH VCC 4 3 RFINM 5 2 GS 1 6 16 RFOUTM RFOUTH RFOUTL RFINH 7 GND 15 8 14 9 10 11 12 13 EN2 RFGNDM Figure 5 Detail of application board layout Note: In order to achieve the same performance as given in this datasheet please follow the suggested PCB-layout as closely as possible. The position of the GND vias is critical for RF performance. Data Sheet RFINL 29 EN1 V1.0, 2008-01-25 BGA734L16 - Low Power Tri-Band UMTS LNA Physical Characteristics Package Footprint 4 4.1 Physical Characteristics Package Footprint Figure 6 Recommended footprint and stencil layout for the TSLP-16-1 package. Data Sheet 30 V1.0, 2008-01-25 BGA734L16 - Low Power Tri-Band UMTS LNA Physical Characteristics Package Dimensions 4.2 Package Dimensions Top view 0.39 +0.01 -0.03 0.05 MAX. 9 Bottom view 2.3 ±0.05 2 ±0.05 1±0.05 10 11 12 13 1.4 ±0.035 1 6 x 0.2 ±0.035 7 6 15 16 5 4 3 2 1 Pin 1 marking 1) Dimension applies to plated terminals 1 6 x 0.2 ±0.035 GPC01203 Figure 7 Package outline (top, side and bottom view) Data Sheet 31 0 . 0 5 x 45˚ V1.0, 2008-01-25 2.3 ±0.05 8 1.4 ±0.035 1) 14 2 ±0.05 1±0.05