BGA735N16

BGA735N16 High Linearity Tri-Band LTE/UMTS LNA (2600/2300/2100, 1900/1800, 900/800/700 MHz) Data Sheet Revision 3.8, 2010-12-23 RF & Protection Devices Edition 2010-12-23 Published by Infineon Technologies AG 81726 Munich, Germany © 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BGA735N16 High Linearity Tri-Band LTE/UMTS LNA BGA735N16 High Linearity Tri-Band LTE/UMTS LNA (2600/2300/2100, 1900/1800, 900/800/700 MHz) Revision History: 2010-12-23, Revision 3.8 Previous Revision: 2010-09-06, Revision 3.7 Page 13-14 21-22 Subjects (major changes since last revision) Added LTE bands 12, 13, 14, 17 Added LTE bands 38, 40 Trademarks of Infineon Technologies AG AURIX™, BlueMoon™, C166™, CanPAK™, CIPOS™, CIPURSE™, COMNEON™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OmniTune™, OptiMOS™, ORIGA™, PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SMARTi™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™, X-GOLD™, X-PMU™, XMM™, XPOSYS™. Other Trademarks Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2010-10-26 Data Sheet 3 Revision 3.8, 2010-12-23 BGA735N16 High Linearity Tri-Band LTE/UMTS LNA Table of Contents Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 2.10 2.11 2.12 2.13 2.14 2.15 2.16 2.17 2.18 2.19 3 3.1 3.2 3.3 3.4 3.5 3.6 4 4.1 4.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 ESD Integrity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Band Select / Gain Control Truth Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Supply Current Characteristics; TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Logic Signal Characteristics; TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Switching Times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Measured RF Characteristics UMTS Bands 12 / 17 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Measured RF Characteristics UMTS Bands 13 / 14 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Measured RF Characteristics UMTS Band 20 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Measured RF Characteristics UMTS Bands 5 / 6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Measured RF Characteristics UMTS Band 8 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Measured RF Characteristics UMTS Bands 3 / 9 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Measured RF Characteristics UMTS Band 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Measured RF Characteristics UMTS Bands 1 / 4 / 10 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Measured RF Characteristics UMTS Band 40 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Measured RF Characteristics UMTS Band 38 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Measured RF Characteristics UMTS Band 7 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Application Circuit and Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UMTS Bands 1, 2, 4, 5, 6 and 10 Application Circuit Schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . UMTS Bands 3, 7, 8, 9 and 38 Application Circuit Schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UMTS Bands 2, 12, 13, 14, 17 and 40 Application Circuit Schematic . . . . . . . . . . . . . . . . . . . . . . . . UMTS Bands 1, 2, 4, 10 and 20 Application Circuit Schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Application Board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 24 25 26 27 28 29 Physical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 Package Footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 Package Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 Data Sheet 4 Revision 3.8, 2010-12-23 BGA735N16 High Linearity Tri-Band LTE/UMTS LNA List of Figures List of Figures Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 Figure 7 Figure 8 Figure 9 Figure 10 Block Diagram of Tri-Band LNA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Application Circuit with Chip Outline (Top View) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Application Circuit with Chip Outline (Top View) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Application Circuit with Chip Outline (Top View) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Application Circuit with Chip Outline (Top View) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Application Board Layout on 3-layer FR4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 Cross-Section View of Application Board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 Detail of Application Board Layout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 Recommended Footprint and Stencil Layout for the TSNP-16-1 Package . . . . . . . . . . . . . . . . . . 31 Package Outline (Top, Side and Bottom View) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 Data Sheet 5 Revision 3.8, 2010-12-23 BGA735N16 High Linearity Tri-Band LTE/UMTS LNA List of Tables List of Tables Table 1 Table 2 Table 3 Table 4 Table 5 Table 6 Table 7 Table 8 Table 9 Table 10 Table 11 Table 12 Table 13 Table 14 Table 15 Table 16 Table 17 Table 18 Table 19 Table 20 Table 21 Table 22 Table 23 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 ESD Integrity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 DC Characteristics, TA =-30 ... 85 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Band Select Truth Table, VCC = 2.8 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Gain Control Truth Table, VCC = 2.8 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Typical Switching Times; TA = -30 ... 85 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Typical Characteristics 700 MHz Band, TA = 25 °C, VCC = 2.8 V . . . . . . . . . . . . . . . . . . . . . . . . . 13 Typical Characteristics 700 MHz Band, TA = 25 °C, VCC = 2.8 V . . . . . . . . . . . . . . . . . . . . . . . . . 14 Typical Characteristics 800 MHz Band, TA = 25 °C, VCC = 2.8 V . . . . . . . . . . . . . . . . . . . . . . . . . 15 Typical Characteristics 800 MHz Band, TA = 25 °C, VCC = 2.8 V . . . . . . . . . . . . . . . . . . . . . . . . . 16 Typical Characteristics 900 MHz Band, TA = 25 °C, VCC = 2.8 V . . . . . . . . . . . . . . . . . . . . . . . . . 17 Typical Characteristics 1800 MHz Band, TA = 25 °C, VCC = 2.8 V . . . . . . . . . . . . . . . . . . . . . . . . 18 Typical Characteristics 1900 MHz Band, TA = 25 °C, VCC = 2.8 V . . . . . . . . . . . . . . . . . . . . . . . . 19 Typical Characteristics 2100 MHz Band, TA = 25 °C, VCC = 2.8 V . . . . . . . . . . . . . . . . . . . . . . . . 20 Typical Characteristics 2300 MHz Band, TA = 25 °C, VCC = 2.8 V . . . . . . . . . . . . . . . . . . . . . . . . 21 Typical Characteristics 2600 MHz Band, TA = 25 °C, VCC = 2.8 V . . . . . . . . . . . . . . . . . . . . . . . . 22 Typical Characteristics 2600 MHz Band, TA = 25 °C, VCC = 2.8 V . . . . . . . . . . . . . . . . . . . . . . . . 23 Bill of Materials . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Bill of Materials . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Bill of Materials . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Bill of Materials . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Pin Definition and Function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 Data Sheet 6 Revision 3.8, 2010-12-23 High Linearity Tri-Band LTE/UMTS LNA (2600/2300/2100, 1900/1800, 900/800/700 MHz) BGA735N16 1 • • • • • • • • • • Features Gain: 16 (17) / -7.5 dB in high / low gain mode (all bands) Noise figure: 1.1 / 1.1 / 1.1 dB in high gain mode (800 MHz / 1900 MHz / 2100 MHz) Supply current: 3.4 (4.0) / 0.65 mA in high / low gain mode (all bands) Standby mode (< 2 µA typ.) Output internally matched to 50 Ω Inputs pre-matched to 50 Ω 2kV HBM ESD protection Low external component count Small leadless TSNP-16-1 package (2.3 x 2.3 x 0.39 mm) Pb-free (RoHS compliant) package Main features: Description The BGA735N16 is a highly flexible, high linearity tri-band (2600/2300/2100, 1900/1800, 900/800/700 MHz) low noise amplifier MMIC for worldwide use. Based on Infineon’s proprietary and cost-effective SiGe:C technology, the BGA735N16 uses an advanced biasing concept in order to achieve high linearity. The device features dynamic gain control, temperature stabilization, standby mode, and 2 kV ESD protection onchip as well as matching off chip. Because the matching is off chip, different LTE/UMTS bands can be easily applied. For example, the 1900 MHz path can be converted into a 2100 MHz path and vice versa by optimizing the input and output matching network. Note: LTE/UMTS bands 1/ 2/ 5 is the standard band combination for this product requiring no external output matching network. Product Name BGA735N16 Data Sheet Package TSNP-16-1 7 Chip T1530 Marking BGA735 Revision 3.8, 2010-12-23 BGA735N16 High Linearity Tri-Band LTE/UMTS LNA Features Figure 1 Block Diagram of Tri-Band LNA Data Sheet 8 Revision 3.8, 2010-12-23 BGA735N16 High Linearity Tri-Band LTE/UMTS LNA Electrical Characteristics 2 2.1 Electrical Characteristics Absolute Maximum Ratings Table 1 Parameter Absolute Maximum Ratings Symbol Min. Values Typ. – – – – – – – – Max. 3.6 10 0.9 4 150 85 150 V mA V dBm °C °C °C – – All pins except RF input pins. – – – – – -0.3 – -0.3 -0.3 – – -30 -65 Unit Note / Test Condition Supply voltage Supply current Pin voltage Pin voltage RF Input Pins RF input power Junction temperature Ambient temperature range Storage temperature range VCC ICC VPIN VRFIN PRFIN Tj TA Tstg VCC+0.3 V Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. 2.2 Thermal Resistance Table 2 Parameter Thermal Resistance Symbol Min. Values Typ. – Max. ≤ 37 K/W – – Unit Note / Test Condition Thermal resistance junction to soldering point RthJS 2.3 ESD Integrity Table 3 Parameter ESD Integrity Symbol Min. Values Typ. 2000 Max. – V All pins – Unit Note / Test Condition ESD hardness HBM1) 1) According to JESD22-A114 VESD-HBM Data Sheet 9 Revision 3.8, 2010-12-23 BGA735N16 High Linearity Tri-Band LTE/UMTS LNA Electrical Characteristics 2.4 DC Characteristics Table 4 Parameter DC Characteristics, TA =-30 ... 85 °C Symbol Min. Values Typ. 2.8 4.0 3.4 650 0.1 2.8 0.0 0.1 10.0 0.1 5.0 Max. 3.0 – – 2.0 – 0.5 – – – – V mA µA µA V V µA µA µA µA VGS VEN1 and VEN2 – High band Mid and low band All bands – VEN1, VEN2 and VGS 2.6 – – – 1.5 – – – – – Unit Note / Test Condition Supply voltage Supply current high gain mode Supply current low gain mode Supply current standby mode Logic level high Logic level low Logic currents VEN Logic currents VGS VCC ICCHG ICCLG ICCOFF VHI VLO IENL IENH IGSL IGSH 2.5 Band Select / Gain Control Truth Table Table 5 VEN1 VEN2 Table 6 VGS Band Select Truth Table, VCC = 2.8 V High band H H Mid band H L Low band L H Power Down L L Gain Control Truth Table, VCC = 2.8 V High Gain H Low Gain L Data Sheet 10 Revision 3.8, 2010-12-23 BGA735N16 High Linearity Tri-Band LTE/UMTS LNA Electrical Characteristics 2.6 Supply Current Characteristics; TA = 25 °C Supply current high gain mode versus resistance of reference resistor RREF (see Figure 2 on Page 24; low gain mode supply current is independent of reference resistor). Supply Current Highband ICC = f (RREF) Supply Current Midband ICC = f (RREF) VCC = 2.8 V VCC = 2.8 V 9 8 7 9 8 7 Icc [mA] Icc [mA] 6 5 4 3 2 6 5 4 3 2 1 10 100 1 10 100 RREF [kΩ] RREF [kΩ] Supply Current Lowband ICC = f (RREF) VCC = 2.8 V 9 8 7 Icc [mA] 6 5 4 3 2 1 10 100 RREF [kΩ] Data Sheet 11 Revision 3.8, 2010-12-23 BGA735N16 High Linearity Tri-Band LTE/UMTS LNA Electrical Characteristics 2.7 Logic Signal Characteristics; TA = 25 °C Current consumption of logic inputs VEN1, VEN2, VGS Logic currents IEN1,2 = f(VEN1,2) VCC = 2.8 V Logic currents IGS = f(VGS) VCC = 2.8 V 12 6 10 8 4 IEN1,2 [µA] 6 IGS [µA] 2 0 0 0.5 1 1.5 2 2.5 3 0 4 2 0 0.5 1 1.5 2 2.5 3 VEN1,2 [V] VGS [V] 2.8 Switching Times Table 7 Parameter Typical Switching Times; TA = -30 ... 85 °C Symbol Min. Values Typ. 1 1 Max. – – µs µs Switching LG ↔ HG all bands Switching from any band to a different band (pins VEN1,2) – – Unit Note / Test Condition Gainstep settling time Bandselect settling time tGS tBS Data Sheet 12 Revision 3.8, 2010-12-23 BGA735N16 High Linearity Tri-Band LTE/UMTS LNA Electrical Characteristics 2.9 Measured RF Characteristics UMTS Bands 12 / 17 Table 8 Parameter Typical Characteristics 700 MHz Band, TA = 25 °C, VCC = 2.8 V1) Symbol Min. 728 734 – – 3.4 0.65 15.2 -9.2 -39 -9.2 1.1 9.2 -15 -16 -19 -12 >2.3 -6 -10 -11 -1 Values Typ. Max. 746 746 – – – – – – – – – – – – – – – – dBm dBm dBm MHz MHz mA mA dB dB dB dB dB dB dB dB dB dB – – High gain mode Low gain mode High gain mode Low gain mode High gain mode Low gain mode High gain mode Low gain mode 50 Ω, high gain mode 50 Ω, low gain mode 50 Ω, high gain mode 50 Ω, low gain mode DC to 8 GHz; all gain modes High gain mode Low gain mode High gain mode Low gain mode Unit Note / Test Condition Pass band range band 12 Pass band range band 17 Current consumption Gain Reverse Isolation Noise figure Input return loss 2) 2) ICCHG ICCLG S21HG S21LG S12HG S12LG NFHG NFLG S11HG S11LG S22HG S22LG k IP1dBHG IP1dBLG IIP3HG IIP3LG – – – – – – – – – – – – – – – – Output return loss Stability factor 3) 2) Input compression point2) Inband IIP3 f1 - f2 = 1 MHz 2) 1) Performance based on application circuit in Figure 4 on Page 26 2) Verification based on AQL; random production test. 3) Guaranteed by device design; not tested in production. Data Sheet 13 Revision 3.8, 2010-12-23 BGA735N16 High Linearity Tri-Band LTE/UMTS LNA Electrical Characteristics 2.10 Measured RF Characteristics UMTS Bands 13 / 14 Table 9 Parameter Typical Characteristics 700 MHz Band, TA = 25 °C, VCC = 2.8 V1) Symbol Min. 746 758 – – 3.4 0.65 15.3 -8.9 -39 -8.9 1.1 8.9 -15 -13 -20 -14 >2.3 -6 -10 -11 -1 Values Typ. Max. 756 768 – – – – – – – – – – – – – – – – dBm dBm dBm MHz MHz mA mA dB dB dB dB dB dB dB dB dB dB – – High gain mode Low gain mode High gain mode Low gain mode High gain mode Low gain mode High gain mode Low gain mode 50 Ω, high gain mode 50 Ω, low gain mode 50 Ω, high gain mode 50 Ω, low gain mode DC to 8 GHz; all gain modes High gain mode Low gain mode High gain mode Low gain mode Unit Note / Test Condition Pass band range band 13 Pass band range band 14 Current consumption Gain Reverse Isolation Noise figure Input return loss 2) 2) ICCHG ICCLG S21HG S21LG S12HG S12LG NFHG NFLG S11HG S11LG S22HG S22LG k IP1dBHG IP1dBLG IIP3HG IIP3LG – – – – – – – – – – – – – – – – Output return loss Stability factor 3) 2) Input compression point2) Inband IIP3 f1 - f2 = 1 MHz 2) 1) Performance based on application circuit in Figure 4 on Page 26 2) Verification based on AQL; random production test. 3) Guaranteed by device design; not tested in production. Data Sheet 14 Revision 3.8, 2010-12-23 BGA735N16 High Linearity Tri-Band LTE/UMTS LNA Electrical Characteristics 2.11 Measured RF Characteristics UMTS Band 20 Table 10 Parameter Typical Characteristics 800 MHz Band, TA = 25 °C, VCC = 2.8 V1) Symbol Min. 791 – 3.4 0.65 15.3 -7.8 -38 -7.8 1.2 7.8 -14 -15 -13 -20 >2.3 -6 -10 -10 1 Values Typ. Max. 821 – – – – – – – – – – – – – – – – dBm dBm dBm MHz mA mA dB dB dB dB dB dB dB dB dB dB – High gain mode Low gain mode High gain mode Low gain mode High gain mode Low gain mode High gain mode Low gain mode 50 Ω, high gain mode 50 Ω, low gain mode 50 Ω, high gain mode 50 Ω, low gain mode DC to 8 GHz; all gain modes High gain mode Low gain mode High gain mode Low gain mode Unit Note / Test Condition Pass band range band 20 Current consumption Gain Reverse Isolation Noise figure Input return loss 2) 2) ICCHG ICCLG S21HG S21LG S12HG S12LG NFHG NFLG S11HG S11LG S22HG S22LG k IP1dBHG IP1dBLG IIP3HG IIP3LG – – – – – – – – – – – – – – – – Output return loss Stability factor 3) 2) Input compression point2) Inband IIP3 f1 - f2 = 1 MHz 2) 1) Performance based on application circuit in Figure 5 on Page 27 2) Verification based on AQL; random production test. 3) Guaranteed by device design; not tested in production. Data Sheet 15 Revision 3.8, 2010-12-23 BGA735N16 High Linearity Tri-Band LTE/UMTS LNA Electrical Characteristics 2.12 Measured RF Characteristics UMTS Bands 5 / 6 Table 11 Parameter Typical Characteristics 800 MHz Band, TA = 25 °C, VCC = 2.8 V1) Symbol Min. 869 875 – – 3.4 0.65 16.0 -7.5 -36 -7.5 1.1 7.5 -16 -17 -17 -13 >2.3 -6 -8 -7 2 Values Typ. Max. 894 885 – – – – – – – – – – – – – – – – dBm dBm dBm MHz MHz mA mA dB dB dB dB dB dB dB dB dB dB – – High gain mode Low gain mode High gain mode Low gain mode High gain mode Low gain mode High gain mode Low gain mode 50 Ω, high gain mode 50 Ω, low gain mode 50 Ω, high gain mode 50 Ω, low gain mode DC to 8 GHz; all gain modes High gain mode Low gain mode High gain mode Low gain mode Unit Note / Test Condition Pass band range band 5 Pass band range band 6 Current consumption Gain Reverse Isolation Noise figure Input return loss 2) 2) ICCHG ICCLG S21HG S21LG S12HG S12LG NFHG NFLG S11HG S11LG S22HG S22LG k IP1dBHG IP1dBLG IIP3HG IIP3LG – – – – – – – – – – – – – – – – Output return loss Stability factor 3) 2) Input compression point2) Inband IIP3 f1 - f2 = 1 MHz 2) 1) Performance based on application circuit in Figure 2 on Page 24 2) Verification based on AQL; random production test. 3) Guaranteed by device design; not tested in production. Data Sheet 16 Revision 3.8, 2010-12-23 BGA735N16 High Linearity Tri-Band LTE/UMTS LNA Electrical Characteristics 2.13 Measured RF Characteristics UMTS Band 8 Table 12 Parameter Typical Characteristics 900 MHz Band, TA = 25 °C, VCC = 2.8 V1) Symbol Min. 925 – 3.4 0.65 16.1 -7.1 -36 -7.1 1.1 7.1 -16 -15 -15 -16 >2.3 -5 -8 -6 2 Values Typ. Max. 960 – – – – – – – – – – – – – – – – dBm dBm dBm MHz mA mA dB dB dB dB dB dB dB dB dB dB – High gain mode Low gain mode High gain mode Low gain mode High gain mode Low gain mode High gain mode Low gain mode 50 Ω, high gain mode 50 Ω, low gain mode 50 Ω, high gain mode 50 Ω, low gain mode DC to 8 GHz; all gain modes High gain mode Low gain mode High gain mode Low gain mode Unit Note / Test Condition Pass band range band 8 Current consumption Gain Reverse Isolation Noise figure Input return loss 2) 2) ICCHG ICCLG S21HG S21LG S12HG S12LG NFHG NFLG S11HG S11LG S22HG S22LG k IP1dBHG IP1dBLG IIP3HG IIP3LG – – – – – – – – – – – – – – – – Output return loss Stability factor 3) 2) Input compression point2) Inband IIP3 f1 - f2 = 1 MHz 2) 1) Performance based on application circuit in Figure 3 on Page 25 2) Verification based on AQL; random production test. 3) Guaranteed by device design; not tested in production. Data Sheet 17 Revision 3.8, 2010-12-23 BGA735N16 High Linearity Tri-Band LTE/UMTS LNA Electrical Characteristics 2.14 Measured RF Characteristics UMTS Bands 3 / 9 Table 13 Parameter Typical Characteristics 1800 MHz Band, TA = 25 °C, VCC = 2.8 V1) Symbol Min. 1805 1844.9 – – 3.4 0.65 16.2 -8.7 -36 -8.7 1.1 8.7 -13 -14 -19 -15 >2.5 -7 -6 -6 3 Values Typ. Max. 1880 1879.9 – – – – – – – – – – – – – – – – dBm dBm dBm MHz MHz mA mA dB dB dB dB dB dB dB dB dB dB – – High gain mode Low gain mode High gain mode Low gain mode High gain mode Low gain mode High gain mode Low gain mode 50 Ω, high gain mode 50 Ω, low gain mode 50 Ω, high gain mode 50 Ω, low gain mode DC to 8 GHz; all gain modes High gain mode Low gain mode High gain mode Low gain mode Unit Note / Test Condition Pass band range band 3 Pass band range band 9 Current consumption Gain Reverse Isolation Noise figure Input return loss 2) 2) ICCHG ICCLG S21HG S21LG S12HG S12LG NFHG NFLG S11HG S11LG S22HG S22LG k IP1dBHG IP1dBLG IIP3HG IIP3LG – – – – – – – – – – – – – – – – Output return loss Stability factor 3) 2) Input compression point2) Inband IIP3 f1 - f2 = 1 MHz 2) 1) Performance based on application circuit in Figure 3 on Page 25 2) Verification based on AQL; random production test. 3) Guaranteed by device design; not tested in production. Data Sheet 18 Revision 3.8, 2010-12-23 BGA735N16 High Linearity Tri-Band LTE/UMTS LNA Electrical Characteristics 2.15 Measured RF Characteristics UMTS Band 2 Table 14 Parameter Typical Characteristics 1900 MHz Band, TA = 25 °C, VCC = 2.8 V1) Symbol Min. 1930 – 3.4 0.65 16.0 -7.8 -35 -7.8 1.1 7.8 -19 -18 -20 -15 >2.4 -7 -7 -6 3 Values Typ. Max. 1990 – – – – – – – – – – – – – – – – dBm dBm dBm MHz mA mA dB dB dB dB dB dB dB dB dB dB – High gain mode Low gain mode High gain mode Low gain mode High gain mode Low gain mode High gain mode Low gain mode 50 Ω, high gain mode 50 Ω, low gain mode 50 Ω, high gain mode 50 Ω, low gain mode DC to 8 GHz; all gain modes High gain mode Low gain mode High gain mode Low gain mode Unit Note / Test Condition Pass band range band 2 Current consumption Gain Reverse Isolation Noise figure Input return loss 2) 2) ICCHG ICCLG S21HG S21LG S12HG S12LG NFHG NFLG S11HG S11LG S22HG S22LG k IP1dBHG IP1dBLG IIP3HG IIP3LG – – – – – – – – – – – – – – – – Output return loss Stability factor 3) 2) Input compression point2) Inband IIP3 f1 - f2 = 1 MHz 2) 1) Performance based on application circuit in Figure 2 on Page 24 2) Verification based on AQL; random production test. 3) Guaranteed by device design; not tested in production. Data Sheet 19 Revision 3.8, 2010-12-23 BGA735N16 High Linearity Tri-Band LTE/UMTS LNA Electrical Characteristics 2.16 Measured RF Characteristics UMTS Bands 1 / 4 / 10 Table 15 Parameter Typical Characteristics 2100 MHz Band, TA = 25 °C, VCC = 2.8 V1) Symbol Min. 2110 2110 2110 – – – 4.0 0.65 17.2 -7.8 -35 -7.8 1.1 7.8 -16 -17 -23 -12 >2.3 -10 -6 -3 3 Values Typ. Max. 2170 2155 2170 – – – – – – – – – – – – – – – – dBm dBm dBm MHz MHz MHz mA mA dB dB dB dB dB dB dB dB dB dB – – – High gain mode Low gain mode High gain mode Low gain mode High gain mode Low gain mode High gain mode Low gain mode 50 Ω, high gain mode 50 Ω, low gain mode 50 Ω, high gain mode 50 Ω, low gain mode DC to 8 GHz; all gain modes High gain mode Low gain mode High gain mode Low gain mode Unit Note / Test Condition Pass band range band 1 Pass band range band 4 Pass band range band 10 Current consumption Gain Reverse Isolation2) Noise figure Input return loss 2) ICCHG ICCLG S21HG S21LG S12HG S12LG NFHG NFLG S11HG S11LG S22HG S22LG k IP1dBHG IP1dBLG IIP3HG IIP3LG – – – – – – – – – – – – – – – – Output return loss Stability factor3) 2) Input compression point2) Inband IIP3 f1 - f2 = 1 MHz 2) 1) Performance based on application circuit in Figure 2 on Page 24 2) Verification based on AQL; random production test. 3) Guaranteed by device design; not tested in production. Data Sheet 20 Revision 3.8, 2010-12-23 BGA735N16 High Linearity Tri-Band LTE/UMTS LNA Electrical Characteristics 2.17 Measured RF Characteristics UMTS Band 40 Table 16 Parameter Typical Characteristics 2300 MHz Band, TA = 25 °C, VCC = 2.8 V1) Symbol Min. 2300 – 4.0 0.65 17.1 7.0 -33 -7.0 1.1 7.0 -20 -18 -20 -11 >2.0 -10 -4 -2 6 Values Typ. Max. 2400 – – – – – – – – – – – – – – – – dBm dBm dBm MHz mA mA dB dB dB dB dB dB dB dB dB dB – High gain mode Low gain mode High gain mode Low gain mode High gain mode Low gain mode High gain mode Low gain mode 50 Ω, high gain mode 50 Ω, low gain mode 50 Ω, high gain mode 50 Ω, low gain mode DC to 8 GHz; all gain modes High gain mode Low gain mode High gain mode Low gain mode Unit Note / Test Condition Pass band range band 40 Current consumption Gain Reverse Isolation Noise figure Input return loss 2) 2) ICCHG ICCLG S21HG S21LG S12HG S12LG NFHG NFLG S11HG S11LG S22HG S22LG k IP1dBHG IP1dBLG IIP3HG IIP3LG – – – – – – – – – – – – – – – – Output return loss Stability factor 3) 2) Input compression point2) Inband IIP3 f1 - f2 = 1 MHz 2) 1) Performance based on application circuit in Figure 4 on Page 26 2) Verification based on AQL; random production test. 3) Guaranteed by device design; not tested in production. Data Sheet 21 Revision 3.8, 2010-12-23 BGA735N16 High Linearity Tri-Band LTE/UMTS LNA Electrical Characteristics 2.18 Measured RF Characteristics UMTS Band 38 Table 17 Parameter Typical Characteristics 2600 MHz Band, TA = 25 °C, VCC = 2.8 V1) Symbol Min. 2570 – 3.4 0.65 15.5 -6.5 -33 -6.5 1.2 6.5 -14 -13 -13 -13 >2.0 -7 -2 -3 7 Values Typ. Max. 2620 – – – – – – – – – – – – – – – – dBm dBm dBm MHz mA mA dB dB dB dB dB dB dB dB dB dB – High gain mode Low gain mode High gain mode Low gain mode High gain mode Low gain mode High gain mode Low gain mode 50 Ω, high gain mode 50 Ω, low gain mode 50 Ω, high gain mode 50 Ω, low gain mode DC to 8 GHz; all gain modes High gain mode Low gain mode High gain mode Low gain mode Unit Note / Test Condition Pass band range band 38 Current consumption Gain Reverse Isolation Noise figure Input return loss 2) 2) ICCHG ICCLG S21HG S21LG S12HG S12LG NFHG NFLG S11HG S11LG S22HG S22LG k IP1dBHG IP1dBLG IIP3HG IIP3LG – – – – – – – – – – – – – – – – Output return loss Stability factor 3) 2) Input compression point2) Inband IIP3 f1 - f2 = 1 MHz 2) 1) Performance based on application circuit in Figure 3 on Page 25 2) Verification based on AQL; random production test. 3) Guaranteed by device design; not tested in production. Data Sheet 22 Revision 3.8, 2010-12-23 BGA735N16 High Linearity Tri-Band LTE/UMTS LNA Electrical Characteristics 2.19 Measured RF Characteristics UMTS Band 7 Table 18 Parameter Typical Characteristics 2600 MHz Band, TA = 25 °C, VCC = 2.8 V1) Symbol Min. 2620 – 4.0 0.65 15.6 -6.3 -32 -6.3 1.2 6.3 -16 -12 -14 -13 >2.0 -7 -3 -2 9 Values Typ. Max. 2690 – – – – – – – – – – – – – – – – dBm dBm dBm MHz mA mA dB dB dB dB dB dB dB dB dB dB – High gain mode Low gain mode High gain mode Low gain mode High gain mode Low gain mode High gain mode Low gain mode 50 Ω, high gain mode 50 Ω, low gain mode 50 Ω, high gain mode 50 Ω, low gain mode DC to 8 GHz; all gain modes High gain mode Low gain mode High gain mode Low gain mode Unit Note / Test Condition Pass band range band 7 Current consumption Gain Reverse Isolation Noise figure Input return loss 2) 2) ICCHG ICCLG S21HG S21LG S12HG S12LG NFHG NFLG S11HG S11LG S22HG S22LG k IP1dBHG IP1dBLG IIP3HG IIP3LG – – – – – – – – – – – – – – – – Output return loss Stability factor 3) 2) Input compression point2) Inband IIP3 f1 - f2 = 1 MHz 2) 1) Performance based on application circuit in Figure 3 on Page 25 2) Verification based on AQL; random production test. 3) Guaranteed by device design; not tested in production. Data Sheet 23 Revision 3.8, 2010-12-23 BGA735N16 High Linearity Tri-Band LTE/UMTS LNA Application Circuit and Block Diagram 3 3.1 Application Circuit and Block Diagram UMTS Bands 1, 2, 4, 5, 6 and 10 Application Circuit Schematic C7 10nF 0 5 GND n/c 4 RFGNDH VCC = 2 .8V VGS = 0 / 2 .8V 3 VCC 2 VGS n/c 1 C1 10 pF RFIN Band 2 L1 L1 3 .3nH C3 10 pF RFIN Bands 1 / 4 / 10 C2 22pF L2 L1 2 .7nH C4 22pF 8 RFGNDM Biasing & Logic Circuitry 14 RFOUTL RFOUT Bands 5 / 6 7 RFINH 15 RFOUTH RFOUT Bands 1 / 4 / 10 6 RFINM 16 RFOUTM RFOUT Band 2 9 C5 3.0 pF RFIN Bands 5 / 6 n/c 10 RFINL 11 VEN2 12 VEN1 RREF 13 R REF 27 kΩ L3 L1 9.1nH C6 22 pF VEN = 0 / 2.8V VEN = 0 / 2.8V BGA735N16_Appl_Bands_1_2_4_5_6_10_BlD.vsd Figure 2 Application Circuit with Chip Outline (Top View) Note: Package paddle (Pin 0) has to be RF grounded. Table 19 L1 ... L3 C1 ... C7 RREF Bill of Materials Part Type Chip inductor Chip capacitor Chip resistor Manufacturer Various Various Various Size 0402 0402 0402 Comment Wirewound, Q ≈ 50 Part Number Data Sheet 24 Revision 3.8, 2010-12-23 BGA735N16 High Linearity Tri-Band LTE/UMTS LNA Application Circuit and Block Diagram 3.2 UMTS Bands 3, 7, 8, 9 and 38 Application Circuit Schematic C9 10nF 0 GND 4 RFGNDH V CC = 2.8V VGS = 0 / 2 .8V 5 n/c 3 VCC 2 VGS n /c 1 RFIN Bands 3 / 9 C1 22 pF L1 L1 4.3 nH C2 22pF C4 3 pF 7 L1 L2 2.4nH 8 RFGNDM Biasing & Logic Circuitry 14 RFOUTL RFINH 15 RFOUTH 6 RFINM 16 RFOUTM L4 1.5nH RFOUT Bands 3 / 9 C7 1.5pF L5 3.9 nH C8 1pF L6 3.3nH RFIN Bands 7 / 38 C3 22pF RFOUT Bands 7 / 38 RFOUT Band 8 9 n/c C5 3 pF L3 L1 8.5nH C6 22 pF 10 RFINL 11 VEN2 12 VEN1 RREF 13 R REF 27 k Ω RFIN Band 8 VEN = 0 / 2.8V VEN = 0 / 2.8V BGA735N16_Appl_Bands_3_7_8_9_38_BlD.vsd Figure 3 Application Circuit with Chip Outline (Top View) Note: Package paddle (Pin 0) has to be RF grounded. Table 20 L1 ... L6 C1 ... C9 RREF Bill of Materials Part Type Chip inductor Chip capacitor Chip resistor Manufacturer Various Various Various Size 0402 0402 0402 Comment Wirewound, Q ≈ 50 Part Number Data Sheet 25 Revision 3.8, 2010-12-23 BGA735N16 High Linearity Tri-Band LTE/UMTS LNA Application Circuit and Block Diagram 3.3 UMTS Bands 2, 12, 13, 14, 17 and 40 Application Circuit Schematic C8 10nF 0 GND 4 VCC = 2.8V V GS = 0 / 2.8V 5 n/c RFGNDH 3 VCC 2 VGS n /c 1 RFIN Band 2 C1 10 pF L1 L1 3.3nH C2 22pF C4 10pF 7 L1 L2 2.7nH 8 RFGNDM Biasing & Logic Circuitry 14 RFOUTL RFINH 15 RFOUTH C7 8 .2pF 6 RFINM 16 RFOUTM L4 3.6nH RFOUT Band 2 RFIN Band 40 C3 56 pF RFOUT Band 40 RFOUT Bands 12 / 13 / 14 / 17 L5 7.5nH 9 n /c C5 3pF L3 L1 11nH C6 100pF 10 RFINL 11 VEN2 12 VEN1 RREF 13 R REF 27 kΩ RFIN Bands 12 / 13 / 14 / 17 VEN = 0 / 2.8V VEN = 0 / 2 .8V BGA735N16_Appl_Bands_2_12_13_14_17_40_BlD.vsd Figure 4 Application Circuit with Chip Outline (Top View) Note: Package paddle (Pin 0) has to be RF grounded. Table 21 L1 ... L5 C1 ... C8 RREF Bill of Materials Part Type Chip inductor Chip capacitor Chip resistor Manufacturer Various Various Various Size 0402 0402 0402 Comment Wirewound, Q ≈ 50 Part Number Data Sheet 26 Revision 3.8, 2010-12-23 BGA735N16 High Linearity Tri-Band LTE/UMTS LNA Application Circuit and Block Diagram 3.4 UMTS Bands 1, 2, 4, 10 and 20 Application Circuit Schematic C8 10nF 0 5 GND n/c 4 RFGNDH VCC = 2.8V V GS = 0 / 2.8V 3 VCC 2 VGS n /c 1 C1 10pF RFIN Band 2 L1 L1 3.3nH C2 22pF 6 RFINM 16 RFOUTM RFOUT Band 2 RFIN Bands 1 / 4 / 10 C3 10pF 7 C4 22pF L2 L L1 2 .7nH RFINH 15 RFOUTH C7 8 .2pF RFOUT Bands 1 / 4 / 10 8 RFGNDM Biasing & Logic Circuitry 14 RFOUTL RFOUT Band 20 L4 9.1nH 9 C5 3 .3pF n/c 10 RFINL 11 VEN2 12 VEN 1 RREF 13 R REF 27 k Ω RFIN Band 20 L3 L1 9.1 nH C6 100 pF VEN = 0 / 2 .8V VEN = 0 / 2 .8V BGA735N16_Appl_Bands_1_2_4_10_20_BlD.vsd Figure 5 Application Circuit with Chip Outline (Top View) Note: Package paddle (Pin 0) has to be RF grounded. Table 22 L1 ... L4 C1 ... C8 RREF Bill of Materials Part Type Chip inductor Chip capacitor Chip resistor Manufacturer Various Various Various Size 0402 0402 0402 Comment Wirewound, Q ≈ 50 Part Number Data Sheet 27 Revision 3.8, 2010-12-23 BGA735N16 High Linearity Tri-Band LTE/UMTS LNA Application Circuit and Block Diagram 3.5 Pin Description Table 23 Pin No. 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Pin Definition and Function Name GND n/c VGS VCC RFGNDH n/c RFINM RFINH RFGNDM n/c RFINL VEN2 VEN1 RREF RFOUTL RFOUTH RFOUTM Pin Type – – – – – – – – – – – – – – – – – Buffer Type – – – – – – – – – – – – – – – – – Function Ground connection for low band LNA and control circuitry (package paddle) Not connected Gain step control Supply voltage High band LNA emitter ground Not connected Mid band LNA input High band LNA input Mid band LNA emitter ground Not connected Low band LNA input Band select control Band select control Bias current reference resistor (high gain mode) Low band output High band LNA output Mid band LNA output Data Sheet 28 Revision 3.8, 2010-12-23 BGA735N16 High Linearity Tri-Band LTE/UMTS LNA Application Circuit and Block Diagram 3.6 Application Board Figure 6 Application Board Layout on 3-layer FR4 Note: Top layer thickness: 0.2 mm, bottom layer thickness: 0.660 mm, 17 µm Cu metallization, gold plated. Board size: 21mm x 50 mm. Figure 7 Cross-Section View of Application Board Data Sheet 29 Revision 3.8, 2010-12-23 BGA735N16 High Linearity Tri-Band LTE/UMTS LNA Application Circuit and Block Diagram Figure 8 Detail of Application Board Layout Note: In order to achieve the same performance as given in this datasheet please follow the suggested PCB-layout as closely as possible. The position of the GND vias is critical for RF performance. Data Sheet 30 Revision 3.8, 2010-12-23 BGA735N16 High Linearity Tri-Band LTE/UMTS LNA Physical Characteristics 4 4.1 Physical Characteristics Package Footprint Figure 9 Recommended Footprint and Stencil Layout for the TSNP-16-1 Package Data Sheet 31 Revision 3.8, 2010-12-23 BGA735N16 High Linearity Tri-Band LTE/UMTS LNA Physical Characteristics 4.2 Package Dimensions Figure 10 Package Outline (Top, Side and Bottom View) Data Sheet 32 Revision 3.8, 2010-12-23 www.infineon.com Published by Infineon Technologies AG