BGA771N16

BGA771N16 High Linearity Dual-Band UMTS LNA (1900/1800/2100, 800/900MHz) Data Sheet Revision 3.1, 2010-03-16 Final RF & Protection Devices Edition 2010-03-16 Published by Infineon Technologies AG 81726 Munich, Germany © 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BGA771N16 - Low Power Dual-Band UMTS LNA BGA771N16 Revision History: 2010-03-16, V3.1 Previous Version: 2008-08-26, V3.0 Page all Subjects (major changes since last revision) Updated package Data Sheet 3 V3.1, 2010-03-16 BGA771N16 - Low Power Dual-Band UMTS LNA Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 1 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 2.9.1 2.9.2 2.10 2.10.1 2.10.2 2.10.3 2.11 2.12 2.13 2.14 2.15 2.16 2.17 2.18 3 3.1 3.2 3.3 3.4 3.5 4 4.1 4.2 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 ESD Integrity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Band Select / Gain Control Truth Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Supply current characteristics; TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Logic Signal Characteristics; TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Switching Times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Measured RF Characteristics Low Band . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Measured RF Characteristics UMTS Bands V / VI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Measured RF Characteristics UMTS Band VIII . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Measured RF Characteristics Mid Band . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Measured RF Characteristics UMTS Band II . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Measured RF Characteristics UMTS Bands III / IX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Measured RF Characteristics UMTS Band IV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Measured Performance Low Band (Band V) High Gain Mode vs. Frequency . . . . . . . . . . . . . . . . . . 15 Measured Performance Low Band (Band V) High Gain Mode vs. Temperature . . . . . . . . . . . . . . . . 16 Measured Performance Low Band (Band V) Low Gain Mode vs. Frequency . . . . . . . . . . . . . . . . . . 17 Measured Performance Low Band (Band V) Low Gain Mode vs. Temperature . . . . . . . . . . . . . . . . . 19 Measured Performance Mid Band (Band II) High Gain Mode vs. Frequency . . . . . . . . . . . . . . . . . . . 20 Measured Performance Mid Band (Band II) High Gain Mode vs. Temperature . . . . . . . . . . . . . . . . . 21 Measured Performance Mid Band (Band II) Low Gain Mode vs. Frequency . . . . . . . . . . . . . . . . . . . 22 Measured Performance Mid Band (Band II) Low Gain Mode vs. Temperature . . . . . . . . . . . . . . . . . 24 Application Circuit and Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UMTS bands II and V Application Circuit Schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UMTS bands III and VIII Application Circuit Schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UMTS bands IV and VIII Application Circuit Schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Pin Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Application Board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 25 26 27 28 29 Physical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 Package Footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 Package Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 Data Sheet 4 V3.1, 2010-03-16 BGA771N16 - Low Power Dual-Band UMTS LNA Description 1 Description The BGA771N16 is a highly flexible, high linearity dual-band (1900/1800/2100, 800/900 MHz) low noise amplifier MMIC for worldwide use. Based on Infineon’s proprietary and cost-effective SiGe:C technology, the BGA771N16 uses an advanced biasing concept in order to achieve high linearity. The device features dynamic gain control, temperature stabilization, standby mode, and 2 kV ESD protection onchip as well as matching off chip. Because the matching is off chip, different UMTS bands can be easily applied. For example, the 1900 MHz path can be converted into a 1800 MHz or a 2100 MHz path by optimizing the input and output matching network. Note: UMTS bands II / V is the standard band combination for this product requiring no external output matching network. Features • Gain: 16 / -7.5 dB in high / low gain mode (all bands) • Noise figure: 1.1 / 1.1 dB in high gain mode (800 MHz / 1900 MHz) • Supply current: 3.4 / 0.65 mA in high / low gain mode (all bands) • Standby mode (< 2 µA typ.) • Output internally matched to 50 Ω • Inputs pre-matched to 50 Ω • 2kV HBM ESD protection • Low external component count • Small leadless PG-TSNP-16-1 package (2.3 x 2.3 x 0.39 mm) • Pb-free (RoHS compliant) package PG-TSNP-16-1 package Figure 1 Type BGA771N16 Data Sheet Block diagram of dual-band LNA Package PG-TSNP-16-1 Marking BGA771 5 Chip T1530 V3.1, 2010-03-16 BGA771N16 - Low Power Dual-Band UMTS LNA Electrical Characteristics Absolute Maximum Ratings 2 2.1 Electrical Characteristics Absolute Maximum Ratings Table 1 Parameter Absolute Maximum Ratings Symbol Values Min. Max. 3.6 10 -0.3 -0.3 V mA V V dBm °C °C °C All pins except RF input pins -0.3 Unit Note / Test Condition VCC Supply current ICC Pin voltage VPIN Pin voltage RF Input Pins VRFIN RF input power PRFIN Junction temperature Tj Ambient temperature range TA Storage temperature range Tstg Supply voltage VCC+0.3 0.9 4 150 -30 -65 85 150 2.2 Thermal Resistance Table 2 Parameter Thermal Resistance Symbol Value ≤ 37 Unit K/W Note / Test Conditions Thermal resistance junction RthJS to soldering point 2.3 ESD Integrity Table 3 Parameter ESD Integrity Symbol 1) Value (typ.) 2000 Unit V Note / Test Conditions All pins ESD hardness HBM VESD-HBM 1) According to JESD22-A114 Data Sheet 6 V3.1, 2010-03-16 BGA771N16 - Low Power Dual-Band UMTS LNA Electrical Characteristics DC Characteristics 2.4 DC Characteristics Table 4 Parameter DC Characteristics, TA = 25 °C Symbol Min. Values Typ. 2.8 3.4 650 0.1 1.5 2.8 0.0 0.2 10.0 0.1 5.0 0.5 2 Max. 3.0 V mA µA µA V V µA µA µA µA VGS VEN1 and VEN2 VEN1, VEN2 and VGS All bands All bands 2.7 Unit Note / Test Condition Supply voltage Supply current high gain mode Supply current low gain mode Supply current standby mode Logic level high Logic level low Logic currents VEN Logic currents VGS VCC ICCHG ICCLG ICCOFF VHI VLO IENL IENH IGSL IGSH 2.5 Band Select / Gain Control Truth Table Table 5 VEN1 VEN2 Table 6 VGS Band Select Truth Table, VCC = 2.8 V Mid band H L Gain Control Truth Table, VCC = 2.8 V High Gain H Low Gain L Low band L H Power Down L L Data Sheet 7 V3.1, 2010-03-16 BGA771N16 - Low Power Dual-Band UMTS LNA Electrical Characteristics Supply current characteristics; TA = 25 °C 2.6 Supply current characteristics; TA = 25 °C Supply current high / mid gain mode versus reference resistor RREF (see Figure 2 on page 25 for reference resistor; low gain mode supply current is independent of reference resistor). Supply Current Midband ICC = f (RREF) Supply Current Lowband ICC = f (RREF) VCC = 2.8 V 9 8 7 VCC = 2.8 V 9 8 7 Icc [mA] 6 5 4 3 2 Icc [mA] 1 10 100 6 5 4 3 2 1 10 100 RREF [kΩ] RREF [kΩ] Data Sheet 8 V3.1, 2010-03-16 BGA771N16 - Low Power Dual-Band UMTS LNA Electrical Characteristics Logic Signal Characteristics; TA = 25 °C 2.7 Logic Signal Characteristics; TA = 25 °C Current consumption of logic inputs VEN1, VEN2, VGS Logic currents IEN1,2 = f(VEN1,2) VCC = 2.8 V 12 Logic currents IGS = f(VGS) VCC = 2.8 V 6 10 8 4 IEN1,2 [µA] 6 4 IGS [µA] 2 0 0.5 1 1.5 2 2.5 3 0 0 2 0 0.5 1 1.5 2 2.5 3 VEN1,2 [V] VGS [V] 2.8 Switching Times Table 7 Parameter Typical switching times; TA = -30 ... 85 °C Symbol Min. Values Typ. 1 1 Max. µs µs Switching LG ↔ HG all bands Switching from any band to a different band Unit Note / Test Condition Settling time gainstep Settling time bandselect tGS tBS Data Sheet 9 V3.1, 2010-03-16 BGA771N16 - Low Power Dual-Band UMTS LNA Electrical Characteristics Measured RF Characteristics Low Band 2.9 Measured RF Characteristics Low Band 2.9.1 Measured RF Characteristics UMTS Bands V / VI Table 8 Parameter Typical Characteristics 800 MHz Band, TA = 25 °C, VCC = 2.8 V Symbol Min. 869 875 Values Typ. Max. 894 885 3.4 0.65 16.1 -7.5 -36 -8 1.1 7.5 -17 -17 -17 -13 >2.3 -6 -8 -7 2 dBm dBm dBm MHz MHz mA mA dB dB dB dB dB dB dB dB dB dB High gain mode Low gain mode High gain mode Low gain mode High gain mode Low gain mode High gain mode Low gain mode 50 Ω, high gain mode 50 Ω, low gain mode 50 Ω, high gain mode 50 Ω, low gain mode DC to 10 GHz; all gain modes High gain mode Low gain mode High gain mode Low gain mode Unit Note / Test Condition Pass band range band V Pass band range band VI Current consumption Gain Reverse Isolation Noise figure Input return loss 1) 1) Output return loss1) Stability factor 2) ICCHG ICCLG S21HG S21LG S12HG S12LG NFHG NFLG S11HG S11LG S22HG S22LG k IP1dBHG IP1dBLG IIP3HG IIP3LG Input compression point1) Inband IIP3 f1 - f2 = 1 MHz Pf1 = Pf2 = -37 dBm 1) 1) Verified by random sampling; not 100% RF tested 2) Not tested in production; guaranteed by device design Data Sheet 10 V3.1, 2010-03-16 BGA771N16 - Low Power Dual-Band UMTS LNA Electrical Characteristics Measured RF Characteristics Low Band 2.9.2 Measured RF Characteristics UMTS Band VIII Table 9 Parameter Typical Characteristics 900 MHz Band, TA = 25 °C, VCC = 2.8 V Symbol Min. 925 Values Typ. 3.4 0.65 16.1 -7.1 -36 -7 1.1 7.1 -16 -15 -15 -16 >2.3 -5 -8 -6 2 dBm dBm dBm Max. 960 MHz mA mA dB dB dB dB dB dB dB dB dB dB High gain mode Low gain mode High gain mode Low gain mode High gain mode Low gain mode High gain mode Low gain mode 50 Ω, high gain mode 50 Ω, low gain mode 50 Ω, high gain mode 50 Ω, low gain mode DC to 10 GHz; all gain modes High gain mode Low gain mode High gain mode Low gain mode Unit Note / Test Condition Pass band range Current consumption Gain Reverse Isolation Noise figure Input return loss1) Output return loss Stability factor 2) 1) 1) ICCHG ICCLG S21HG S21LG S12HG S12LG NFHG NFLG S11HG S11LG S22HG S22LG k IP1dBHG IP1dBLG IIP3HG IIP3LG Input compression point1) Inband IIP3 f1 - f2 = 1 MHz Pf1 = Pf2 = -37 dBm 1) 1) Verified by random sampling; not 100% RF tested 2) Not tested in production; guaranteed by device design Data Sheet 11 V3.1, 2010-03-16 BGA771N16 - Low Power Dual-Band UMTS LNA Electrical Characteristics Measured RF Characteristics Mid Band 2.10 Measured RF Characteristics Mid Band 2.10.1 Measured RF Characteristics UMTS Band II Table 10 Parameter Typical Characteristics 1900 MHz Band, TA = 25 °C, VCC = 2.8 V Symbol Min. 1930 Values Typ. 3.4 0.65 16.0 -7.8 -35 -8 1.1 7.8 -19 -18 -20 -15 >2.4 -7 -7 -6 3 dBm dBm dBm Max. 1990 MHz mA mA dB dB dB dB dB dB dB dB dB dB High gain mode Low gain mode High gain mode Low gain mode High gain mode Low gain mode High gain mode Low gain mode 50 Ω, high gain mode 50 Ω, low gain mode 50 Ω, high gain mode 50 Ω, low gain mode DC to 10 GHz; all gain modes High gain mode Low gain mode High gain mode Low gain mode Unit Note / Test Condition Pass band range Current consumption Gain Reverse Isolation Noise figure Input return loss 1) 1) Output return loss Stability factor 2) 1) ICCHG ICCLG S21HG S21LG S12HG S12LG NFHG NFLG S11HG S11LG S22HG S22LG k IP1dBHG IP1dBLG IIP3HG IIP3LG Input compression point1) Inband IIP3 f1 - f2 = 1 MHz Pf1 = Pf2 = -37 dBm 1) 1) Verified by random sampling; not 100% RF tested 2) Not tested in production; guaranteed by device design Data Sheet 12 V3.1, 2010-03-16 BGA771N16 - Low Power Dual-Band UMTS LNA Electrical Characteristics Measured RF Characteristics Mid Band 2.10.2 Measured RF Characteristics UMTS Bands III / IX Table 11 Parameter Typical Characteristics 1800 MHz Band, TA = 25 °C, VCC = 2.8 V Symbol Min. 1805 1844.9 Values Typ. Max. 1880 1879.9 3.4 0.65 16.2 -8.7 -36 -9 1.0 8.7 -13 -14 -19 -15 >2.5 -7 -6 -5 3 dBm dBm dBm MHz MHz mA mA dB dB dB dB dB dB dB dB dB dB High gain mode Low gain mode High gain mode Low gain mode High gain mode Low gain mode High gain mode Low gain mode 50 Ω, high gain mode 50 Ω, low gain mode 50 Ω, high gain mode 50 Ω, low gain mode DC to 10 GHz; all gain modes High gain mode Low gain mode High gain mode Low gain mode Unit Note / Test Condition Pass band range band III Pass band range band IX Current consumption Gain Reverse Isolation Noise figure Input return loss 1) 1) Output return loss Stability factor 2) 1) ICCHG ICCLG S21HG S21LG S12HG S12LG NFHG NFLG S11HG S11LG S22HG S22LG k IP1dBHG IP1dBLG IIP3HG IIP3LG Input compression point1) Inband IIP3 f1 - f2 = 1 MHz Pf1 = Pf2 = -37 dBm 1) 1) Verified by random sampling; not 100% RF tested 2) Not tested in production; guaranteed by device design Data Sheet 13 V3.1, 2010-03-16 BGA771N16 - Low Power Dual-Band UMTS LNA Electrical Characteristics Measured RF Characteristics Mid Band 2.10.3 Measured RF Characteristics UMTS Band IV Table 12 Parameter Typical Characteristics 2100 MHz Band, TA = 25 °C, VCC = 2.8 V Symbol Min. 2110 Values Typ. 3.4 0.65 15.8 -7.0 -34 -7 1.1 7 -19 -14 -19 -15 >2.3 -7 -4 -4 6 dBm dBm dBm Max. 2155 MHz mA mA dB dB dB dB dB dB dB dB dB dB High gain mode Low gain mode High gain mode Low gain mode High gain mode Low gain mode High gain mode Low gain mode 50 Ω, high gain mode 50 Ω, low gain mode 50 Ω, high gain mode 50 Ω, low gain mode DC to 10 GHz; all gain modes High gain mode Low gain mode High gain mode Low gain mode Unit Note / Test Condition Pass band range Current consumption Gain Reverse Isolation Noise figure Input return loss1) Output return loss Stability factor 2) 1) 1) ICCHG ICCLG S21HG S21LG S12HG S12LG NFHG NFLG S11HG S11LG S22HG S22LG k IP1dBHG IP1dBLG IIP3HG IIP3LG Input compression point1) Inband IIP3 f1 - f2 = 1 MHz Pf1 = Pf2 = -37 dBm 1) 1) Verified by random sampling; not 100% RF tested 2) Not tested in production; guaranteed by device design Data Sheet 14 V3.1, 2010-03-16 BGA771N16 - Low Power Dual-Band UMTS LNA Electrical Characteristics Measured Performance Low Band (Band V) High Gain Mode vs. Frequency 2.11 Measured Performance Low Band (Band V) High Gain Mode vs. Frequency TA= 25 °C, VCC = 2.8 V, VGS = 2.8 V, VEN1 = 0 V, VEN2 = 2.8 V Power Gain |S21| = f ( f ) Power Gain wideband |S21| = f ( f ) 19 20 18 10 Power Gain [dB] Power Gain [dB] 0.9 17 −30°C 25°C 0 16 85°C −10 15 −20 14 −30 13 0.86 0.87 0.88 0.89 −40 0 2 4 6 8 10 Frequency [GHz] Frequency [GHz] Matching |S11| = f ( f ), |S22| = f ( f ) Gainstep HG-LG |∆S21| = f ( f ) 0 26 25.5 25 −5 Delta Gain [dB] |S11|, |S22| [dB] −10 24.5 24 25°C, 85°C −15 S11 S 22 23.5 23 −30°C −20 −25 22.5 22 0.86 −30 0.86 0.87 0.88 0.89 0.9 0.87 0.88 0.89 0.9 Frequency [GHz] Frequency [GHz] Data Sheet 15 V3.1, 2010-03-16 BGA771N16 - Low Power Dual-Band UMTS LNA Electrical Characteristics Measured Performance Low Band (Band V) High Gain Mode vs. Temperature Noise Figure NF = f ( f ) Input Compression P1dB = f ( f ) 1.6 1.5 1.4 0 −2 −4 P1dB [dBm] 0.87 0.88 0.89 0.9 1.3 NF [dB] −6 −8 −10 −12 −14 0.86 1.2 1.1 1 0.9 0.8 0.86 0.87 0.88 0.89 0.9 Frequency [GHz] Frequency [GHz] 2.12 Measured Performance Low Band (Band V) High Gain Mode vs. Temperature VCC = 2.8 V, VGS = 2.8 V, VEN1 = 0 V, VEN2 = 2.8 V, f = 880 MHz Power Gain |S21| = f (TA) Supply Current ICC = f (TA) 19 5.5 5 4.5 18 Power Gain [dB] 17 ICC [mA] −20 0 20 A 4 3.5 3 16 15 14 2.5 2 −40 13 −40 40 60 80 100 −20 0 20 A 40 60 80 100 T [°C] T [°C] Data Sheet 16 V3.1, 2010-03-16 BGA771N16 - Low Power Dual-Band UMTS LNA Electrical Characteristics Measured Performance Low Band (Band V) Low Gain Mode vs. Frequency Noise Figure NF = f (TA) Input Compression P1dB = f (TA) 1.8 0 −2 −4 1.6 1.4 P1dB [dBm] −20 0 20 40 60 80 100 NF [dB] −6 −8 −10 1.2 1 0.8 −12 −14 −40 0.6 −40 −20 0 20 40 60 80 100 TA [°C] TA [°C] 2.13 Measured Performance Low Band (Band V) Low Gain Mode vs. Frequency TA = 25 °C, VCC = 2.8 V, VGS = 0 V, VEN1 = 0 V, VEN2 = 2.8 V Power Gain |S21| = f ( f ) Power Gain wideband |S21| = f ( f ) −5 0 −6 −30°C −10 Power Gain [dB] Power Gain [dB] 0.9 −7 25°C 85°C −20 −8 −30 −9 −40 −10 −50 −11 0.86 0.87 0.88 0.89 −60 0 2 4 6 8 10 Frequency [GHz] Frequency [GHz] Data Sheet 17 V3.1, 2010-03-16 BGA771N16 - Low Power Dual-Band UMTS LNA Electrical Characteristics Measured Performance Low Band (Band V) Low Gain Mode vs. Frequency Matching |S11| = f ( f ), |S22| = f ( f ) 0 −5 |S11|, |S22| [dB] −10 S −15 S 22 11 −20 −25 −30 0.86 0.87 0.88 0.89 0.9 Frequency [GHz] Noise Figure NF = f ( f ) Input Compression P1dB = f ( f ) 11 0 −2 −4 10 9 P1dB [dBm] 0.87 0.88 0.89 0.9 NF [dB] −6 −8 −10 8 7 6 −12 −14 0.86 5 0.86 0.87 0.88 0.89 0.9 Frequency [GHz] Frequency [GHz] Data Sheet 18 V3.1, 2010-03-16 BGA771N16 - Low Power Dual-Band UMTS LNA Electrical Characteristics Measured Performance Low Band (Band V) Low Gain Mode vs. Temperature 2.14 Measured Performance Low Band (Band V) Low Gain Mode vs. Temperature VCC = 2.8 V, VGS = 0 V, VEN1 = 0 V, VEN2 = 2.8 V, f = 880 MHz Power Gain |S21| = f (TA) Supply Current ICC = f (TA) −5 0.8 −6 0.75 Power Gain [dB] −7 0.7 −8 ICC [mA] −20 0 20 40 60 80 100 0.65 −9 0.6 −10 0.55 −11 −40 0.5 −40 −20 0 20 40 60 80 100 TA [°C] TA [°C] Noise Figure NF = f (TA) Input Compression P1dB = f (TA) 11 0 −2 −4 10 9 P1dB [dBm] −20 0 20 40 60 80 100 NF [dB] −6 −8 −10 8 7 6 −12 −14 −40 5 −40 −20 0 20 A 40 60 80 100 TA [°C] T [°C] Data Sheet 19 V3.1, 2010-03-16 BGA771N16 - Low Power Dual-Band UMTS LNA Electrical Characteristics Measured Performance Mid Band (Band II) High Gain Mode vs. Frequency 2.15 Measured Performance Mid Band (Band II) High Gain Mode vs. Frequency TA = 25 °C, VCC = 2.8 V, VGS = 2.8 V, VEN1 = 2.8 V, VEN2 = 0 V Power Gain |S21| = f ( f ) Power Gain wideband |S21| = f ( f ) 19 20 18 10 Power Gain [dB] Power Gain [dB] 17 −30°C 0 16 25°C 85°C −10 15 −20 14 −30 13 1.93 1.94 1.95 1.96 1.97 1.98 1.99 −40 0 2 4 6 8 10 Frequency [GHz] Frequency [GHz] Matching |S11| = f ( f ), |S22| = f ( f ) Gainstep HG-LG |∆S21| = f ( f ) 0 26 25.5 25 −5 Delta Gain [dB] |S11|, |S22| [dB] −10 24.5 24 25°C −15 S11 −20 S −25 22 23.5 23 22.5 22 1.93 85°C −30°C −30 1.93 1.94 1.95 1.96 1.97 1.98 1.99 1.94 1.95 1.96 1.97 1.98 1.99 Frequency [GHz] Frequency [GHz] Data Sheet 20 V3.1, 2010-03-16 BGA771N16 - Low Power Dual-Band UMTS LNA Electrical Characteristics Measured Performance Mid Band (Band II) High Gain Mode vs. Temperature Noise Figure NF = f ( f ) Input Compression P1dB = f ( f ) 1.6 1.5 1.4 0 −2 −4 P1dB [dBm] 1.94 1.95 1.96 1.97 1.98 1.99 1.3 NF [dB] −6 −8 −10 −12 −14 1.93 1.2 1.1 1 0.9 0.8 1.93 1.94 1.95 1.96 1.97 1.98 1.99 Frequency [GHz] Frequency [GHz] 2.16 Measured Performance Mid Band (Band II) High Gain Mode vs. Temperature VCC = 2.8 V, VGS = 2.8 V, VEN1 = 2.8 V, VEN2 = 0 V, f = 1960 MHz Power Gain |S21| = f (TA) Supply Current ICC = f (TA) 19 5.5 5 4.5 18 Power Gain [dB] 17 ICC [mA] −20 0 20 A 4 3.5 3 16 15 14 2.5 2 −40 13 −40 40 60 80 100 −20 0 20 A 40 60 80 100 T [°C] T [°C] Data Sheet 21 V3.1, 2010-03-16 BGA771N16 - Low Power Dual-Band UMTS LNA Electrical Characteristics Measured Performance Mid Band (Band II) Low Gain Mode vs. Frequency Noise Figure NF = f (TA) Input Compression P1dB = f (TA) 1.8 0 −2 −4 1.6 1.4 P1dB [dBm] −20 0 20 40 60 80 100 NF [dB] −6 −8 −10 1.2 1 0.8 −12 −14 −40 0.6 −40 −20 0 20 40 60 80 100 TA [°C] TA [°C] 2.17 Measured Performance Mid Band (Band II) Low Gain Mode vs. Frequency TA = 25 °C, VCC = 2.8 V, VGS = 0 V, VEN1 = 2.8 V, VEN2 = 0 V Power Gain |S21| = f ( f ) Power Gain wideband |S21| = f ( f ) −5 0 −6 −30°C −10 Power Gain [dB] Power Gain [dB] −7 25°C 85°C −20 −8 −30 −9 −40 −10 −50 −11 1.93 1.94 1.95 1.96 1.97 1.98 1.99 −60 0 2 4 6 8 10 Frequency [GHz] Frequency [GHz] Data Sheet 22 V3.1, 2010-03-16 BGA771N16 - Low Power Dual-Band UMTS LNA Electrical Characteristics Measured Performance Mid Band (Band II) Low Gain Mode vs. Frequency Matching |S11| = f ( f ), |S22| = f ( f ) 0 −5 |S11|, |S22| [dB] −10 −15 S11 S22 −20 −25 −30 1.93 1.94 1.95 1.96 1.97 1.98 1.99 Frequency [GHz] Noise Figure NF = f ( f ) Input Compression P1dB = f ( f ) 11 0 −2 −4 10 9 P1dB [dBm] 1.94 1.95 1.96 1.97 1.98 1.99 NF [dB] −6 −8 −10 8 7 6 −12 −14 1.93 5 1.93 1.94 1.95 1.96 1.97 1.98 1.99 Frequency [GHz] Frequency [GHz] Data Sheet 23 V3.1, 2010-03-16 BGA771N16 - Low Power Dual-Band UMTS LNA Electrical Characteristics Measured Performance Mid Band (Band II) Low Gain Mode vs. Temperature 2.18 Measured Performance Mid Band (Band II) Low Gain Mode vs. Temperature VCC = 2.8 V, VGS = 0 V, VEN1 = 2.8 V, VEN2 = 0 V, f = 1960 MHz Power Gain |S21| = f (TA) Supply Current ICC = f (TA) −5 0.8 −6 0.75 Power Gain [dB] −7 0.7 −8 ICC [mA] −20 0 20 40 60 80 100 0.65 −9 0.6 −10 0.55 −11 −40 0.5 −40 −20 0 20 40 60 80 100 TA [°C] TA [°C] Noise Figure NF = f (TA) Input Compression P1dB = f (TA) 11 0 −2 −4 10 9 P1dB [dBm] −20 0 20 40 60 80 100 NF [dB] −6 −8 −10 8 7 6 −12 −14 −40 5 −40 −20 0 20 A 40 60 80 100 TA [°C] T [°C] Data Sheet 24 V3.1, 2010-03-16 BGA771N16 - Low Power Dual-Band UMTS LNA Application Circuit and Block Diagram UMTS bands II and V Application Circuit Schematic 3 3.1 Application Circuit and Block Diagram UMTS bands II and V Application Circuit Schematic C5 10nF 0 GND 5 n/c VCC = 2.8V VGS = 0 / 2.8V 4 n/c 3 VCC 2 VGS n /c 1 RFIN Band II C1 10pF L1 L1 3.3nH C2 22pF 6 RFINM 16 RFOUTM RFOUT Band II L1 7 n/c 15 n/c 8 RFGNDM 14 Biasing & Logic Circuitry 10 RFINL 11 VEN2 RFOUTL RFOUT Band V 9 n/c C3 3.0pF L2 L1 9.1nH 12 VEN1 RREF 13 R REF 27k Ω RFIN Band V VEN = 0 / 2.8V VEN = 0 / 2.8V BGA771N16 _Appl _Bands25 _BlD.vsd C4 22pF Figure 2 Application circuit with chip outline (top view) Note: Package paddle (Pin 0) has to be RF grounded. Table 13 L1 ... L2 C1 ... C5 RREF Parts List Part Type Chip inductor Chip capacitor Chip resistor Manufacturer Various Various Various Size 0402 0402 0402 Comment Wirewound, Q ≈ 50 Part Number Data Sheet 25 V3.1, 2010-03-16 BGA771N16 - Low Power Dual-Band UMTS LNA Application Circuit and Block Diagram UMTS bands III and VIII Application Circuit Schematic 3.2 UMTS bands III and VIII Application Circuit Schematic C5 10nF 0 GND 5 n/c VCC = 2.8V V GS = 0 / 2.8V 4 n/c 3 VCC 2 VGS n/c 1 RFIN Band III C1 22pF L1 L1 4.3nH C2 22pF 7 n/c 15 n/c 6 RFINM 16 RFOUTM L3 1.5nH C6 1.5pF RFOUT Band III L1 L4 3.3nH 8 RFGNDM 14 Biasing & Logic Circuitry 10 RFINL 11 VEN 2 RFOUTL RFOUT Band VIII 9 n/c C3 3.3 pF L2 L1 8.2nH 12 VEN1RREF 13 RREF 27k Ω RFIN Band VIII VEN = 0 / 2 .8V VEN = 0 / 2.8V BGA771N16_ Appl_Bands 38_ BlD.vsd C4 22pF Figure 3 Application circuit with chip outline (top view) Note: Package paddle (Pin 0) has to be RF grounded. Table 14 L1 ... L4 C1 ... C6 RREF Parts List Part Type Chip inductor Chip capacitor Chip resistor Manufacturer Various Various Various Size 0402 0402 0402 Comment Wirewound, Q ≈ 50 Part Number Data Sheet 26 V3.1, 2010-03-16 BGA771N16 - Low Power Dual-Band UMTS LNA Application Circuit and Block Diagram UMTS bands IV and VIII Application Circuit Schematic 3.3 UMTS bands IV and VIII Application Circuit Schematic C5 10nF 0 GND 5 n/c VCC = 2.8V VGS = 0 / 2.8V 4 n/c 3 VCC 2 VGS n/c 1 RFIN Band IV C1 22pF L1 L1 3.4 nH C2 22pF 7 L1 n/c 15 n/c 6 RFINM 16 RFOUTM L3 2.2nH RFOUT Band IV L4 3.3nH 8 RFGNDM 14 Biasing & Logic Circuitry 10 RFINL 11 VEN 2 RFOUTL RFOUT Band VIII 9 n/c C3 3.3 pF L2 L1 8.2nH 12 VEN1RREF 13 RREF 27k Ω RFIN Band VIII VEN = 0 / 2.8V VEN = 0 / 2.8V BGA771N16_ Appl_ Bands48_ BlD.vsd C4 22pF Figure 4 Application circuit with chip outline (top view) Note: Package paddle (Pin 0) has to be RF grounded. Table 15 L1 ... L4 C1 ... C5 RREF Parts List Part Type Chip inductor Chip capacitor Chip resistor Manufacturer Various Various Various Size 0402 0402 0402 Comment Wirewound, Q ≈ 50 Part Number Data Sheet 27 V3.1, 2010-03-16 BGA771N16 - Low Power Dual-Band UMTS LNA Application Circuit and Block Diagram Pin Definition 3.4 Pin Definition Table 16 Pin Number 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Pin Definition and Function Symbol GND n/c VGS VCC n/c n/c RFINM n/c RFGNDM n/c RFINL VEN2 VEN1 RREF RFOUTL n/c RFOUTM Function Package paddle; ground connection for low band LNA and control circuity Not connected Gain step control Supply voltage Not connected Not connected Mid band (1900/1800/2100 MHz) LNA input Not connected Mid band LNA emitter ground Not connected Low band (800/900 MHz) LNA input Band select control Band select control Bias current reference resistor (high gain mode) Low band (800/900 MHz) LNA output Not connected Mid band (1900/1800/2100 MHz) LNA output Data Sheet 28 V3.1, 2010-03-16 BGA771N16 - Low Power Dual-Band UMTS LNA Application Circuit and Block Diagram Application Board 3.5 Application Board Figure 5 Application board layout on 3-layer FR4. Top layer thickness: 0.2 mm, bottom layer thickness: 0.8 mm, 17 µm Cu metallization, gold plated. Board size: 21 x 50 mm Figure 6 Cross-section view of application board Data Sheet 29 V3.1, 2010-03-16 BGA771N16 - Low Power Dual-Band UMTS LNA Application Circuit and Block Diagram Application Board Figure 7 Detail of application board layout Note: In order to achieve the same performance as given in this datasheet please follow the suggested PCB-layout as closely as possible. The position of the GND vias is critical for RF performance. Data Sheet 30 V3.1, 2010-03-16 BGA771N16 - Low Power Dual-Band UMTS LNA Physical Characteristics Package Footprint 4 4.1 Physical Characteristics Package Footprint Figure 8 Recommended footprint and stencil layout for the TSNP-16-1 package Data Sheet 31 V3.1, 2010-03-16 BGA771N16 - Low Power Dual-Band UMTS LNA Physical Characteristics Package Dimensions 4.2 Package Dimensions Figure 9 Package outline (top, side and bottom view) Data Sheet 32 V3.1, 2010-03-16 www.infineon.com Published by Infineon Technologies AG