BGA777L7

Data Sheet, V3.0, July 2009 BGA777L7 S i ng l e - B an d U M T S L N A (2300 - 2700 MHz) RF & Protection Devices Edition 2009-07-02 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2009. All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BGA777L7 - Low Power Single-Band UMTS LNA BGA777L7 Revision History: 2009-07-02, V3.0 Previous Version: 2009-02-18, V1.0 preliminary Page 7 8 9 10, 11 9-11 12-16 17 18, 19 20, 21 Subjects (major changes since last revision) Updated DC characteristics (added limits) Added supply current and power gain characteristics Updated RF characteristics for application board BGA7xxL7 and added limits Added RF characteristics for UMTS bands 38 and 40 Updated footnotes Updated measured performance for application board BGA7xxL7 Updated application circuit schematic for application board BGA7xxL7 Added application circuit schematic for UMTS bands 38 and 40 Updated application board Data Sheet 3 V3.0, 2009-07-02 BGA777L7 - Low Power Single-Band UMTS LNA Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 1 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 2.10 2.11 2.12 2.13 2.14 2.15 3 3.1 3.2 3.3 3.4 3.5 4 4.1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 ESD Integrity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Gain Mode Select Truth Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Switching Times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Supply Current and Power Gain Characteristics; TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Logic Signal Characteristics; TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Measured RF Characteristics UMTS Band 7 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Measured RF Characteristics UMTS Band 38 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Measured RF Characteristics UMTS Band 40 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Measured Performance Band 7 Application High Gain Mode vs. Frequency . . . . . . . . . . . . . . . . . . . 12 Measured Performance Band 7 Application High Gain Mode vs. Temperature . . . . . . . . . . . . . . . . . 13 Measured Performance Band 7 Application Low Gain Mode vs. Frequency . . . . . . . . . . . . . . . . . . . 14 Measured Performance Band 7 Application Low Gain Mode vs. Temperature . . . . . . . . . . . . . . . . . 16 Application Circuit and Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UMTS Band 7 Application Circuit Schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UMTS Band 38 Application Circuit Schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UMTS Band 40 Application Circuit Schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Pin Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Application Board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 17 18 19 19 20 Physical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Package Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Data Sheet 4 V3.0, 2009-07-02 BGA777L7 - Low Power Single-Band UMTS LNA Description 1 Description The BGA777L7 is a low current single-band low noise amplifier MMIC for UMTS bands 7, 38 and 40. The LNA is based upon Infineon’s proprietary and cost-effective SiGe:C technology and comes in a low profile TSLP-7-1 leadless green package. This document specifies electrical parameters, pinout, application circuit and packaging of the chip. The device features dynamic gain control, temperature stabilization, standby mode and 2 kV ESD protection on-chip as well as matching off chip. Features • Gain: 16 / -7 dB in high / low gain mode • Noise figure: 1.2 dB in high gain mode • Supply current: 4.2 / 0.5 mA in high / low gain mode • Standby mode (< 2 µA typ.) • Inputs pre-matched to 50 Ω • 2 kV HBM ESD protection • Low external component count • Small leadless TSLP-7-1 package (2.0 x 1.3 x 0.39 mm) • Pb-free (RoHS compliant) package TSLP-7-1 package Figure 1 Type BGA777L7 Block diagram of single-band LNA Package TSLP-7-1 Marking B7 Chip T1531 Data Sheet 5 V3.0, 2009-07-02 BGA777L7 - Low Power Single-Band UMTS LNA Electrical Characteristics Absolute Maximum Ratings 2 2.1 Electrical Characteristics Absolute Maximum Ratings Table 1 Parameter Absolute Maximum Ratings Symbol Values Min. Max. 3.6 10 -0.3 -0.3 V mA V V dBm °C °C °C All pins except RF input pin -0.3 Unit Note / Test Condition VCC Supply current ICC Pin voltage VPIN Pin voltage RF Input Pin VRFIN RF input power PRFIN Junction temperature Tj Ambient temperature range TA Storage temperature range Tstg Supply voltage VCC + 0.3 0.9 4 150 -30 -65 85 150 2.2 Thermal Resistance Table 2 Parameter Thermal Resistance Symbol Value 240 Unit K/W Note / Test Conditions Thermal resistance junction RthJS to soldering point 2.3 ESD Integrity Table 3 Parameter ESD Integrity Symbol 1) Value (typ.) 2000 Unit V Note / Test Conditions All pins ESD hardness HBM VESD-HBM 1) According to JESD22-A114 Data Sheet 6 V3.0, 2009-07-02 BGA777L7 - Low Power Single-Band UMTS LNA Electrical Characteristics DC Characteristics 2.4 DC Characteristics Table 4 Parameter DC Characteristics, TA = 25 °C Symbol Min. Values Typ. 2.8 4.2 530 0.1 1.5 -0.2 2.8 0.0 5.0 5.0 0.5 0.1 6.0 0.1 6.0 2.0 Max. 3.0 V mA µA µA V V µA µA µA µA VGS VEN VEN and VGS 2.6 Unit Note / Test Condition Supply voltage Supply current high gain mode Supply current low gain mode Supply current standby mode Logic level high Logic level low Logic currents VEN Logic currents VGS VCC ICCHG ICCLG ICCOFF VHI VLO IENL IENH IGSL IGSH 2.5 Gain Mode Select Truth Table Table 5 Truth Table State Bands 7, 38, 40 VGS L H L H HG OFF ON STANDBY 1) Control Voltage VEN H H L L LG ON OFF 1) In order to achieve minimum standby current it is encouraged to apply logic low-level at the VGS pin in standby mode although this is not mandatory. Details see section 2.4. 2.6 Switching Times Table 6 Parameter Typical switching times; TA = -30 ... 85 °C Symbol Min. Values Typ. 1 7 Max. µs Switching LG ↔ HG V3.0, 2009-07-02 Unit Note / Test Condition Settling time gainstep Data Sheet tGS BGA777L7 - Low Power Single-Band UMTS LNA Electrical Characteristics Supply Current and Power Gain Characteristics; TA = 25 °C 2.7 Supply Current and Power Gain Characteristics; TA = 25 °C Supply current and power gain high gain mode versus reference resistor RREF (see Figure 2 on page 17 for reference resistor; low gain mode supply current is independent of reference resistor). Supply Current ICC = f (RREF) VCC = 2.8 V 7 6.5 6 16.5 VCC = 2.8 V 17 Power Gain |S21| = f (RREF) Power Gain [dB] 1 10 100 5.5 16 Icc [mA] 5 4.5 4 3.5 3 2.5 2 15.5 15 14.5 14 10 100 1000 RREF [kΩ] RREF [kΩ] 2.8 Logic Signal Characteristics; TA = 25 °C Current consumption of logic inputs VEN, VGS Logic currents IEN = f (VEN) VCC =2.8 V 6 Logic currents IGS = f (VGS) VCC = 2.8 V 6 4 4 IEN [µA] 2 IGS [µA] 2 0 0 0.5 1 1.5 2 2.5 3 0 0 0.5 1 1.5 2 2.5 3 VEN [V] V GS [V] Data Sheet 8 V3.0, 2009-07-02 BGA777L7 - Low Power Single-Band UMTS LNA Electrical Characteristics Measured RF Characteristics UMTS Band 7 2.9 Measured RF Characteristics UMTS Band 7 Table 7 Parameter Typical Characteristics 2650 MHz Band TA = 25 °C, VCC = 2.8 V1) Symbol Min. 2620 Values Typ. 4.2 0.5 14.4 -9.6 15.7 -7.1 -34 -7 1.2 6.8 -20 -10 -20 -11 >2.3 -10 -2 -2 7 dBm dBm dBm 1.7 Max. 2690 4.9 0.8 17.0 -4.1 MHz mA mA dB dB dB dB dB dB dB dB dB dB High gain mode Low gain mode High gain mode Low gain mode High gain mode Low gain mode High gain mode Low gain mode 50 Ω, high gain mode 50 Ω, low gain mode 50 Ω, high gain mode 50 Ω, low gain mode DC to 10 GHz; all gain modes High gain mode Low gain mode High gain mode Low gain mode Unit Note / Test Condition Pass band range band I Current consumption Gain Reverse Isolation Noise figure Input return loss 2) 2) Output return loss Stability factor 3) 2) ICCHG ICCLG S21HG S21LG S12HG S12LG NFHG NFLG S11HG S11LG S22HG S22LG k IP1dBHG IP1dBLG IIP3HG IIP3LG Input compression point2) Inband IIP3 f1 - f2 = 1 MHz Pf1 = Pf2 = -37 dBm 2) 1) Performance based on application circuit in Figure 2 on page 17 2) Verified based on AQL; not 100% tested in production 3) Guaranteed by device design; not tested in production Data Sheet 9 V3.0, 2009-07-02 BGA777L7 - Low Power Single-Band UMTS LNA Electrical Characteristics Measured RF Characteristics UMTS Band 38 2.10 Measured RF Characteristics UMTS Band 38 Table 8 Parameter Typical Characteristics 2600 MHz Band TA = 25 °C, VCC = 2.8 V1) Symbol Min. 2570 Values Typ. 4.2 0.5 15.5 -6.9 -34 -7 1.2 6.8 -15 -11 -15 -13 >2.3 -10 -2 -2 7 dBm dBm dBm Max. 2620 MHz mA mA dB dB dB dB dB dB dB dB dB dB High gain mode Low gain mode High gain mode Low gain mode High gain mode Low gain mode High gain mode Low gain mode 50 Ω, high gain mode 50 Ω, low gain mode 50 Ω, high gain mode 50 Ω, low gain mode DC to 10 GHz; all gain modes High gain mode Low gain mode High gain mode Low gain mode Unit Note / Test Condition Pass band range band I Current consumption Gain Reverse Isolation Noise figure Input return loss2) Output return loss Stability factor 3) 2) 2) ICCHG ICCLG S21HG S21LG S12HG S12LG NFHG NFLG S11HG S11LG S22HG S22LG k IP1dBHG IP1dBLG IIP3HG IIP3LG Input compression point2) Inband IIP3 f1 - f2 = 1 MHz Pf1 = Pf2 = -37 dBm 2) 1) Performance based on application circuit in Figure 3 on page 18 2) Verified based on AQL; not 100% tested in production 3) Guaranteed by device design; not tested in production Data Sheet 10 V3.0, 2009-07-02 BGA777L7 - Low Power Single-Band UMTS LNA Electrical Characteristics Measured RF Characteristics UMTS Band 40 2.11 Measured RF Characteristics UMTS Band 40 Table 9 Parameter Typical Characteristics 2300 MHz Band TA = 25 °C, VCC = 2.8 V1) Symbol Min. 2300 Values Typ. 4.2 0.5 16.8 -7.2 -35 -7 1.2 7.0 -23 -12 -15 -12 >2.3 -11 -2 -2 8 dBm dBm dBm Max. 2400 MHz mA mA dB dB dB dB dB dB dB dB dB dB High gain mode Low gain mode High gain mode Low gain mode High gain mode Low gain mode High gain mode Low gain mode 50 Ω, high gain mode 50 Ω, low gain mode 50 Ω, high gain mode 50 Ω, low gain mode DC to 10 GHz; all gain modes High gain mode Low gain mode High gain mode Low gain mode Unit Note / Test Condition Pass band range band I Current consumption Gain Reverse Isolation Noise figure Input return loss2) Output return loss Stability factor 3) 2) 2) ICCHG ICCLG S21HG S21LG S12HG S12LG NFHG NFLG S11HG S11LG S22HG S22LG k IP1dBHG IP1dBLG IIP3HG IIP3LG Input compression point2) Inband IIP3 f1 - f2 = 1 MHz Pf1 = Pf2 = -37 dBm 2) 1) Performance based on application circuit in Figure 4 on page 19 2) Verified based on AQL; not 100% tested in production 3) Guaranteed by device design; not tested in production Data Sheet 11 V3.0, 2009-07-02 BGA777L7 - Low Power Single-Band UMTS LNA Electrical Characteristics Measured Performance Band 7 Application High Gain Mode vs. Frequency 2.12 Measured Performance Band 7 Application High Gain Mode vs. Frequency TA = 25 °C, VCC = 2.8 V, VGS = 2.8 V, VEN = 2.8 V Power Gain |S21| = f ( f ) Power Gain Wideband |S21| = f ( f ) 17 20 10 16 −30°C 0 Power Gain [dB] 25°C Power Gain [dB] −10 −20 −30 −40 −50 15 85°C 14 13 2.62 2.63 2.64 2.65 2.66 2.67 2.68 2.69 −60 0 2 4 6 8 Frequency [GHz] Frequency [GHz] Matching |S11| = f ( f ), |S22| = f ( f ) Gainstep HG-LG |∆S21| = f ( f ) 0 24 −5 23.5 |S11|, |S22| [dB] −15 S −20 S −25 11 22 Delta Gain [dB] −10 23 25°C −30°C 22.5 85°C −30 2.62 2.63 2.64 2.65 2.66 2.67 2.68 2.69 22 2.62 2.63 2.64 2.65 2.66 2.67 2.68 2.69 Frequency [GHz] Frequency [GHz] Data Sheet 12 V3.0, 2009-07-02 BGA777L7 - Low Power Single-Band UMTS LNA Electrical Characteristics Measured Performance Band 7 Application High Gain Mode vs. Temperature Noise Figure NF = f ( f ) Input Compression P1dB = f ( f ) 1.6 1.5 1.4 −6 −7 −8 1.2 1.1 1 0.9 0.8 2.62 2.63 2.64 2.65 2.66 2.67 2.68 2.69 P1dB [dBm] Frequency [GHz] 1.3 −9 −10 −11 −12 −13 −14 2.62 2.63 2.64 2.65 2.66 2.67 2.68 2.69 NF [dB] Frequency [GHz] 2.13 Measured Performance Band 7 Application High Gain Mode vs. Temperature VCC = 2.8 V, VGS = 2.8 V, VEN = 2.8 V, f = 2650 MHz Power Gain |S21| = f (TA) Supply Current ICC = f (TA) 18 6 17 5.5 Power Gain [dB] 5 ICC [mA] −20 0 20 A 16 4.5 15 4 14 3.5 13 −40 40 60 80 100 3 −40 −20 0 20 40 60 80 100 T [°C] TA [°C] Data Sheet 13 V3.0, 2009-07-02 BGA777L7 - Low Power Single-Band UMTS LNA Electrical Characteristics Measured Performance Band 7 Application Low Gain Mode vs. Frequency Noise Figure NF = f (TA) Input Compression P1dB = f (TA) 2 1.8 1.6 −6 −7 −8 NF [dB] 1.4 1.2 1 0.8 0.6 −40 P1dB [dBm] −20 0 20 40 60 80 100 −9 −10 −11 −12 −13 −14 −40 −20 0 20 40 60 80 100 TA [°C] TA [°C] 2.14 Measured Performance Band 7 Application Low Gain Mode vs. Frequency TA = 25 °C, VCC = 2.8 V, VGS = 0 V, VEN = 2.8 V Power Gain |S21| = f ( f ) Power Gain Wideband |S21| = f ( f ) −5 0 −6 −10 −30°C Power Gain [dB] Power Gain [dB] −20 −7 25°C −30 −8 85°C −40 −9 −50 −10 2.62 2.63 2.64 2.65 2.66 2.67 2.68 2.69 −60 0 2 4 6 8 Frequency [GHz] Frequency [GHz] Data Sheet 14 V3.0, 2009-07-02 BGA777L7 - Low Power Single-Band UMTS LNA Electrical Characteristics Measured Performance Band 7 Application Low Gain Mode vs. Frequency Matching |S11| = f ( f ), |S22| = f ( f ) 0 −5 S 22 11 |S11|, |S22| [dB] −10 S −15 −20 −25 −30 2.62 2.63 2.64 2.65 2.66 2.67 2.68 2.69 Frequency [GHz] Noise Figure NF = f ( f ) Input Compression P1dB = f ( f ) 11 4 2 0 10 9 P1dB [dBm] Frequency [GHz] NF [dB] −2 −4 −6 8 7 6 −8 −10 2.62 2.63 2.64 2.65 2.66 2.67 2.68 2.69 5 2.62 2.63 2.64 2.65 2.66 2.67 2.68 2.69 Frequency [GHz] Data Sheet 15 V3.0, 2009-07-02 BGA777L7 - Low Power Single-Band UMTS LNA Electrical Characteristics Measured Performance Band 7 Application Low Gain Mode vs. Temperature 2.15 Measured Performance Band 7 Application Low Gain Mode vs. Temperature VCC = 2.8 V, VGS = 0 V, VEN = 2.8 V, f = 2650 MHz Power Gain |S21| = f (TA) Supply Current ICC = f (TA) −5 0.7 0.65 −6 0.6 Power Gain [dB] ICC [mA] −20 0 20 40 60 80 100 −7 0.55 0.5 0.45 0.4 −8 −9 0.35 −10 −40 0.3 −40 −20 0 20 40 60 80 100 TA [°C] TA [°C] Noise Figure NF = f (TA) Input Compression P1dB = f (TA) 10 4 2 0 9 8 P1dB [dBm] −20 0 20 40 60 80 100 NF [dB] −2 −4 −6 7 6 5 −8 −10 −40 4 −40 −20 0 20 A 40 60 80 100 TA [°C] T [°C] Data Sheet 16 V3.0, 2009-07-02 BGA777L7 - Low Power Single-Band UMTS LNA Application Circuit and Block Diagram UMTS Band 7 Application Circuit Schematic 3 3.1 Application Circuit and Block Diagram UMTS Band 7 Application Circuit Schematic RFIN 2600 MHz L1 3.3nH C1 2.4pF 1 6 RFOUT RFIN L3 3.3nH C2 1.5pF L2 3.9nH RFOUT 2600 MHz VEN = 0 / 2.8 V 2 VEN Biasing & Logic Circuitry 5 RREF R REF 8.2kΩ VGS = 0 / 2.8 V 3 VGS 7 GND 4 VCC VCC = 2 .8 V C3 10nF BGA777L7_Appl _Band7_BlD.vsd Figure 2 Application circuit with chip outline (top view) Note: Package paddle (Pin 0) has to be RF grounded. Table 10 L1 ... L3 C1 ... C3 RREF Parts List Part Type Chip inductor Chip capacitor Chip resistor Manufacturer Various Various Various Size 0402 0402 0402 Comment Wirewound, Q ≈ 50 Part Number Data Sheet 17 V3.0, 2009-07-02 BGA777L7 - Low Power Single-Band UMTS LNA Application Circuit and Block Diagram UMTS Band 38 Application Circuit Schematic 3.2 UMTS Band 38 Application Circuit Schematic RFIN 2500 MHz L1 3.3nH C1 2.4pF 1 6 RFOUT RFIN L3 3.6nH C2 1.2pF L2 4.1nH RFOUT 2500 MHz VEN = 0 / 2.8 V 2 VEN Biasing & Logic Circuitry 5 RREF R REF 8.2kΩ VGS = 0 / 2.8 V 3 VGS 7 GND 4 VCC VCC = 2 .8 V C3 10nF BGA777L7_Appl_ Band38_BlD.vsd Figure 3 Application circuit with chip outline (top view) Note: Package paddle (Pin 0) has to be RF grounded. Table 11 L1 ... L3 C1 ... C3 RREF Parts List Part Type Chip inductor Chip capacitor Chip resistor Manufacturer Various Various Various Size 0402 0402 0402 Comment Wirewound, Q ≈ 50 Part Number Data Sheet 18 V3.0, 2009-07-02 BGA777L7 - Low Power Single-Band UMTS LNA Application Circuit and Block Diagram UMTS Band 40 Application Circuit Schematic 3.3 UMTS Band 40 Application Circuit Schematic RFIN 2300 MHz C1 56 pF C2 10pF 1 6 RFOUT RFIN L2 3.6nH L1 2.7nH RFOUT 2300 MHz VEN = 0 / 2.8 V 2 VEN Biasing & Logic Circuitry 5 RREF R REF 8.2kΩ VGS = 0 / 2.8 V 3 VGS 7 GND 4 VCC VCC = 2 .8 V C3 10nF BGA777L7_Appl_ Band40_BlD.vsd Figure 4 Application circuit with chip outline (top view) Note: Package paddle (Pin 0) has to be RF grounded. Table 12 L1 ... L2 C1 ... C3 RREF Parts List Part Type Chip inductor Chip capacitor Chip resistor Manufacturer Various Various Various Size 0402 0402 0402 Comment Wirewound, Q ≈ 50 Part Number 3.4 Pin Definition Table 13 Pin Number 1 2 3 4 5 6 7 Pin Definition and Function Symbol RFIN VEN VGS VCC RREF RFOUT GND Function LNA input (2600 MHz) Band select control Gain step control Supply voltage Bias current reference resistor (high gain mode) LNA output (2600 MHz) Package paddle; ground connection for LNA and control circuitry Data Sheet 19 V3.0, 2009-07-02 BGA777L7 - Low Power Single-Band UMTS LNA Application Circuit and Block Diagram Application Board 3.5 Application Board Figure 5 Application board layout on 3-layer FR4. Top layer thickness: 0.2 mm, bottom layer thickness: 0.8 mm, 35 µm Cu metallization, gold plated. Board size: 21 x 19 mm Figure 6 Cross-section view of application board Data Sheet 20 V3.0, 2009-07-02 BGA777L7 - Low Power Single-Band UMTS LNA Application Circuit and Block Diagram Application Board Figure 7 Detail of application board layout Note: In order to achieve the same performance as given in this datasheet please follow the suggested PCB-layout as closely as possible. The position of the GND vias is critical for RF performance. Data Sheet 21 V3.0, 2009-07-02 BGA777L7 - Low Power Single-Band UMTS LNA Physical Characteristics Package Dimensions 4 4.1 Physical Characteristics Package Dimensions NSMD 0.2 0.2 0.2 SMD 1.4 1.4 1.4 0.2 0.2 1.9 0.25 1.4 0.2 0.25 0.2 1.9 1.9 0.2 0.25 1.9 0.2 0.2 0.2 0.2 0.3 0.3 Copper 0.3 0.25 Stencil apertures R0.1 0.3 0.3 Copper 0.3 0.2 0.25 0.25 0.25 Stencil apertures R0.1 Solder mask Solder mask TSLP-7-1-FP V01 Figure 8 Recommended footprint and stencil layout for the TSLP-7-1 package Top view 0.4 0.05 MAX. +0.1 Bottom view 1.3 ±0.05 1 ±0.05 4 5 6 1.7 ±0.05 6 x 0.2 ±0.035 1) 7 3 Pin 1 marking 2 1 6 x 0.2 ±0.035 1) TSLP-7-1-PO V04 1) Dimension applies to plated terminal Figure 9 Package outline (top, side and bottom view) 4 0.5 2.18 Pin 1 marking 1.45 TSLP-7-1-TP V03 Figure 10 Tape & reel dimensions Data Sheet 22 8 2 ±0.05 1.2 ±0.035 1) 1.1 ±0.035 1) V3.0, 2009-07-02 0.2 0.25 BGA777L7 - Low Power Single-Band UMTS LNA Physical Characteristics Package Dimensions Figure 11 Marking layout Data Sheet 23 V3.0, 2009-07-02 www.infineon.com Published by Infineon Technologies AG