BGA915N7

BGA915N7 Silicon Germanium GPS Low Noise Amplifier Data Sheet Revision 4.0, 2011-03-23 RF & Protection Devices Edition 2011-03-23 Published by Infineon Technologies AG 81726 Munich, Germany © 2011 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BGA915N7 Revision History Page or Item all 10, 11 12, 13 all 7 10, 11 Subjects (major changes since previous revision) “Preliminary” status removed Min/max limits specified for parameters ICC, |S21|2 and NF Application Board: Board inductance specified, Cross-section drawing updated Preliminary data sheet New marking code defined Electrical Characteristics specified for frequency range f = 1550 - 1615 MHz Revision 4.0, 2011-03-23 Revision 3.0, 2010-12-07 Trademarks of Infineon Technologies AG AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™, PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™. Other Trademarks Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2011-02-24 Data Sheet 3 Revision 4.0, 2011-03-23 BGA915N7 Table of Contents Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 1 2 3 4 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Package Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Data Sheet 4 Revision 4.0, 2011-03-23 BGA915N7 List of Figures List of Figures Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 Figure 7 Figure 8 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Application Schematic BGA915N7 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Drawing of Application Board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Cross-section of Application Board. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Package Outline TSNP-7-6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Marking Layout (top view). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Tape & Reel Dimensions (Ø reel 180 mm, pieces/reel 7500) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Footprint TSNP-7-6. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Data Sheet 5 Revision 4.0, 2011-03-23 BGA915N7 List of Tables List of Tables Table 1 Table 2 Table 3 Table 4 Table 5 Table 6 Pin Definition and Function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Electrical Characteristics: TA = 25 °C, VCC = 2.8 V, VPON,ON = 2.8 V, VPON,OFF = 0 V, f = 1550 - 1615 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Electrical Characteristics: TA = 25 °C, VCC = 1.8 V, VPON,ON = 1.8 V, VPON,OFF = 0 V, f = 1550 - 1615 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Bill of Materials . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Data Sheet 6 Revision 4.0, 2011-03-23 Silicon Germanium GPS Low Noise Amplifier BGA915N7 Features • • • • • • • • • • • • • • Insertion power gain: 15.5 dB High out of band input 3rd order intercept point: +10dBm High input 1 dB compression point: -5 dBm Low Noise Figure: 0.7 dB Low current consumption: 4.4 mA Operating frequencies: 1550 - 1615 MHz Supply voltage: 1.5 V to 3.6 V Digital on/off switch (1V logic high level) Very small TSNP-7-6 leadless package B7HF Silicon Germanium technology RF output internally matched to 50 Ω Only 3 external SMD components necessary 2 kV HBM ESD protection (including AI-pin) Pb-free (RoHS compliant) package 6 5 4 7 1 2 3 TSNP-7-6 Application • Suitable for all Global Navigation Satellite Systems (GNSS) like GPS, Galileo, GLONASS, COMPASS VCC PON BIAS AI BIAS AO ESD VSS DEG BGA915 N7_Blockdiagram .vsd Figure 1 Block Diagram Marking BC 7 Package TSNP-7-6 Revision 4.0, 2011-03-23 Product Name BGA915N7 Data Sheet BGA915N7 Features Description The BGA915N7 is a front-end low noise amplifier for Global Navigation Satellite Systems (GNSS) from 1550 MHz to 1615 MHz like GPS, Galileo, GLONASS and COMPASS. The LNA provides 15.5 dB gain and 0.7 dB noise figure at a current consumption of 4.4 mA in the application configuration described in Chapter 3. The BGA915N7 is based upon Infineon Technologies‘ B7HF Silicon Germanium technology. It operates from 1.5 V to 3.6 V supply voltage. Pin Definition and Function Table 1 Pin No. 1 2 3 4 5 6 7 Pin Definition and Function Name DEG AI BIAS AO VCC PON VSS Function LNA emitter degeneration ground LNA input DC bias LNA output DC Supply Power on control Common on chip RF and DC ground Data Sheet 8 Revision 4.0, 2011-03-23 BGA915N7 Maximum Ratings 1 Maximum Ratings Table 2 Parameter Maximum Ratings Symbol Min. Values Typ. – – – – – – – – – – – – – – Max. 3.6 0.9 0.9 V V V V V V mA dBm mW °C °C °C V V -0.3 -0.3 -0.3 -0.3 -0.3 -0.3 – – – – -40 -65 Unit Note / Test Condition 1) Voltage at pin VCC Voltage at pin AI Voltage at pin BIAS Voltage at pin AO Voltage at pin PON Voltage at pin VSS Current into pin VCC RF input power Total power dissipation, VCC VAI VBIAS VAO VPON VSS ICC PIN TJ Ptot TA TSTG – – – – – – – – – – – according to JESD22A-114 according to JESD22A-115 VCC + 0.3 VCC + 0.3 0.3 20 0 72 150 85 150 2000 100 TS < 129 °C2) Junction temperature Ambient temperature range Storage temperature range ESD capability all pins ESD capability all pins VESD_HBM – VESD_MM – 1) All voltages refer to VSS-Node unless otherwise noted 2) TS is measured on the ground lead at the soldering point Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. Thermal Resistance Table 3 Parameter Junction - soldering point 1) Thermal Resistance Symbol Value 291 Unit K/W RthJS 1) For calculation of RthJA please refer to Application Note Thermal Resistance Data Sheet 9 Revision 4.0, 2011-03-23 BGA915N7 Electrical Characteristics 2 Electrical Characteristics Electrical Characteristics:1) TA = 25 °C, VCC = 2.8 V, VPON,ON = 2.8 V, VPON,OFF = 0 V, f = 1550 - 1615 MHz Symbol Min. Values Typ. – 4.4 0.2 – – 5 – 15.5 0.7 11 16 20 5 5 -5 +2 +10 >1 Max. 3.6 5.7 3 Vcc 0.4 12 1 17.2 1.2 – – – – – – – – – V mA μA V V μA μA dB dB dB dB dB μs μs dBm dBm dBm OFF- to ON-mode ON- to OFF-mode – ON-mode OFF-mode ON-mode OFF-mode ON-mode OFF-mode 1.5 3.3 – 1.0 0 – – 2 Table 4 Parameter Unit Note / Test Condition Supply voltage Supply current Power On voltage Power On current Insertion power gain Noise figure 2) VCC ICC Vpon Ipon |S21| 14.3 – – – 2 NF RLin RLout 1/|S12| 3) ZS = 50 Ω Input return loss Output return loss Reverse isolation Power gain settling time – – – – – – – tS Inband input 1 dB compression IP1dB point Inband input 3rd order intercept IIP3 point4) Out of band input 3rd order intercept point5) Stability 1) 2) 3) 4) 5) f1 = 1575 MHz f2 = f1 +/-1 MHz f1 = 1712.7 MHz f2 = 1850 MHz f = 20 MHz ... 10 GHz IIP3oob k Based on the application described in chapter 3 PCB losses are subtracted To be within 1 dB of the final gain OFF- to ON-mode; to be within 3 dB of the final gain ON- to OFF-mode Input Power = -30 dBm for each tone Input Power = -20 dBm for each tone Data Sheet 10 Revision 4.0, 2011-03-23 BGA915N7 Electrical Characteristics Table 5 Parameter Electrical Characteristics:1) TA = 25 °C, VCC = 1.8 V, VPON,ON = 1.8 V, VPON,OFF = 0 V, f = 1550 - 1615 MHz Symbol Min. Values Typ. – 4.4 0.2 – – 5 – 15.5 0.7 11 16 20 5 5 -8 +1 +10 >1 Max. 3.6 5.7 3 Vcc 0.4 12 1 17.2 1.2 – – – – – – – – – V mA μA V V μA μA dB dB dB dB dB μs μs dBm dBm dBm OFF- to ON-mode ON- to OFF-mode – ON-mode OFF-mode ON-mode OFF-mode ON-mode OFF-mode 1.5 3.3 – 1.0 0 – – 2 Unit Note / Test Condition Supply voltage Supply current Gain switch control voltage Gain switch control current Insertion power gain Noise figure 2) VCC ICC Vpon Ipon |S21| 14.3 – – – – – – – – – – NF RLin RLout 1/|S12|2 3) ZS = 50 Ω Input return loss Output return loss Reverse isolation Power gain settling time tS Inband input 1 dB compression IP1dB point Inband input 3rd order intercept IIP3 point4) Out of band input 3rd order intercept point5) Stability 1) 2) 3) 4) 5) f1 = 1575 MHz f2 = f1 +/-1 MHz f1 = 1712.7 MHz f2 = 1850 MHz f = 20 MHz ... 10 GHz IIP3oob k Based on the application described in chapter 3 PCB losses are subtracted To be within 1 dB of the final gain OFF- to ON-mode; to be within 3 dB of the final gain ON- to OFF-mode Input Power = -30 dBm for each tone Input Power = -20 dBm for each tone Data Sheet 11 Revision 4.0, 2011-03-23 BGA915N7 Application Information 3 Application Information Application Board Configuration N1 DEG, 1 C2 (optional) L2 AI, 2 C3 L1 BIAS, 3 VSS, 7 AO, 4 VCC, 5 Microstrip Line BGA915N7 PON, 6 PON RFin VCC C1 (optional) RFout BGA 915 N7 _Schematic.vsd Figure 2 Table 6 Name Application Schematic BGA915N7 Bill of Materials Value 1 uF 33 pF 1 pF 82 nH 7.3 nH 1) Package 0402 0402 0402 0402 0402 TSNP-7-6 Manufacturer Various Various Various Murata LQW type Murata LQW type Infineon Function RF block DC block Input matching Bias feed and RF choke Input matching Board inductance from pin DEG to common GND SiGe LNA C1 (optional) C2 (optional) C3 L1 L2 Microstrip Line 550pH N1 BGA915N7 1) Total board inductance = inductance of the microstrip line (~500pH) + inductance of via (~50pH) Please refer to application note AN258 for more details on “realization of small inductor values on a PCB by using microstriplines”. A list of all application notes is available at http://www.infineon.com/gpslna.appnotes. Data Sheet 12 Revision 4.0, 2011-03-23 BGA915N7 Application Information BGA 915N7_Application _Board .vsd Figure 3 Drawing of Application Board Vias Copper 35µm Vias Ro4003, 0.2mm FR4,0.8mm BGA915 N7_application _board _sideview.vsd Figure 4 Cross-section of Application Board Data Sheet 13 Revision 4.0, 2011-03-23 BGA915N7 Package Information 4 Package Information Top view 0.375 +0.025 -0.015 0.02 MAX. Bottom view 1.26 ±0.05 1.16 ±0.05 1) 0.96 ±0.05 4 5 6 1.175 ±0.05 0.5 ±0.05 1) 7 3 2 1 Pin 1 marking 6 x 0.2 ±0.05 1) 1) Dimension applies to plated terminals 6 x 0.225 ±0.05 1) TSNP-7-6-PO V01 Figure 5 Package Outline TSNP-7-6 Type code 12 Date code Pin 1 marking TSNP-7-6-MK V01 Figure 6 Marking Layout (top view) 4 0.5 1.7 Pin 1 marking 1.6 TSNP-7-6-TP V03 Figure 7 Tape & Reel Dimensions (Ø reel 180 mm, pieces/reel 7500) Data Sheet 14 8 1.4 ±0.05 Revision 4.0, 2011-03-23 BGA915N7 Package Information 0.35 0.35 0.25 0.23 TSNP-7-6-FP V01 1.21 0.51 SMD 1.21 0.51 0.45 1.55 1.55 0.25 0.23 0.25 Copper 0.25 0.23 0.35 0.25 0.23 0.25 Vias Solder mask Stencil apertures Figure 8 Footprint TSNP-7-6 Data Sheet 15 0.35 Revision 4.0, 2011-03-23 0.45 0.2 0.2 0.2 0.2 www.infineon.com Published by Infineon Technologies AG