BGB540

Data sheet, BGB540, Sept. 2002 BGB540 Active Biased RF Transistor MMIC Wireless Silicon Discretes Never stop thinking. Edition 2002-09-11 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 2002. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BGB540 Data sheet Revision History: Previous Version: Page 4-9 2002-09-11 2001-08-16 Subjects (major changes since last revision) RF parameters and SPICE model updated Preliminary status removed For questions on technology, delivery and prices please contact the Infineon Technologies Offices in Germany or the Infineon Technologies Companies and Representatives worldwide: see our webpage at http://www.infineon.com Active Biased RF Transistor BGB540 Features • • • • • • Gms= 18dB at 1.8GHz Small SOT343 package Current easy adjustable by an external resistor Open collector output Typical supply voltage: 1.4-4.3V SIEGET®-45 technology Applications • For high gain low noise amplifiers • Ideal for wideband applications, cellular phones, cordless telephones, SAT-TV and high frequency oscillators Bias,4 Bias C,3 Description SIEGET®-45 NPN Transistor with integrated biasing for high gain low noise figure applications. IC can be controlled using IBias according to IC=10*IBias . B,1 E,2 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BGB540 Data sheet Package SOT343 Marking MCs 4 Chip T0559 2002-09-11 BGB540 Maximum Ratings Parameter Maximum collector-emitter voltage Maximum collector current Maximum bias current Maximum emitter-base voltage Maximum base current Total power dissipation, TS < 75°C1) Junction temperature Ambient temperature Storage temperature Thermal resistance: junction-soldering point Symbol VCE IC IBias VEB IB Ptot Tj TA TSTG Rth JS Value 4.5 80 8 1.2 0.7 250 150 -65 ... +150 -65 ... +150 300 Unit V mA mA V mA mW °C °C °C K/W Notes: For detailed symbol description refer to figure 1. 1) TS is measured on the emitter lead at the soldering point to the PCB IBias Bias,4 Bias IC C,3 VCE B,1 VEB IB E,2 Fig. 1: Symbol definition Data sheet 5 2002-09-11 BGB540 ID VD RBias IBias Bias,4 Bias IC C,3 Bias-T RF Out B,1 RF In N.C. E,2 Bias-T Fig. 2: Test Circuit for Electrical Characteristics and S-Parameter Electrical Characteristics at TA=25°C (measured in test circuit specified in fig. 2) Parameter Maximum stable power gain VD=2V, Ic=20mA, f=1.8GHz Insertion power gain VD=2V, Ic=20mA Insertion loss VD=2V, Ic=0mA Noise figure (ZS=50Ω) VD=2V, Ic=5mA f=0.9GHz f=1.8GHz f=0.9GHz f=1.8GHz f=0.9GHz f=1.8GHz Symbol Gms |S21|2 IL F50Ω P-1dB 12 10 OIP3 22 20 CCB CR 7 0.15 10 13 pF dBm min. typ. 18 21.5 16 21 16 1.15 1.3 max. Unit dB dB dB dB dBm Output power at 1dB gain compression VD=2V, Ic=20mA, f=1.8GHz ZL=ZLOPT ZL=50Ω Output third order intercept point VD=2V, Ic=20mA, f=1.8GHz ZL/S=ZL/SOPT ZL/S=50Ω Collector-base capacitance VCB=2V, f=1MHz Current ratio IC/IBias IBias=0.5mA, VD=3V Data sheet 6 2002-09-11 BGB540 S-Parameter VD=2V, IC=20mA (see Electrical Characteristics for conditions) Frequency S11 [GHz] Mag 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 3.0 4.0 5.0 6.0 0.5387 0.4744 0.3724 0.2992 0.2453 0.2205 0.1900 0.1765 0.1648 0.1660 0.1737 0.1966 0.2486 0.3451 0.4645 S11 Ang -17.8 -35.8 -60.7 -74.7 -88.7 -100.1 -111.0 -122.0 -132.7 -142.5 -153.1 175.9 156.8 136.5 117.1 S21 Mag 35.6280 31.0390 22.5520 16.8920 13.3320 10.9000 9.1938 7.9452 6.9615 6.2388 5.6320 3.8040 2.9394 2.4109 2.0318 S21 Ang 158.9 142.8 120.2 108.1 98.2 91.2 85.5 80.6 76.3 72.2 68.2 51.6 36.2 20.7 5.5 S12 Mag 0.0064 0.0141 0.0241 0.0335 0.0439 0.0547 0.0663 0.0785 0.0901 0.1014 0.1125 0.1655 0.2151 0.2439 0.2362 S12 Ang 75.4 76.8 75.4 75.3 74.7 73.4 71.5 69.3 66.5 63.5 60.5 44.9 29.1 9.1 -7.1 S22 Mag 0.9334 0.8357 0.6670 0.5672 0.5066 0.4675 0.4406 0.4209 0.4013 0.3822 0.3519 0.2868 0.2398 0.1506 0.1196 S22 Ang -11.8 -20.9 -29.7 -31.0 -33.0 -33.8 -35.1 -36.8 -38.7 -41.5 -43.6 -57.0 -76.1 -111.0 168.0 Device Current I D = f(VD, RBias) 60 50 270Ω 40 680Ω I D [mA] 30 20 1.5kΩ 2.7kΩ 10 4.7kΩ 8.2kΩ 0 1 2 3 4 0 VD [V] Data sheet 7 2002-09-11 BGB540 Power Gain |S21|2, Gma, Gms = f(f) V = 3V, I = 20mA D C 40 Power Gain Gma, Gms = f(f) V = 3V D 40 35 35 0.3GHz 30 30 |S21|2, Gma, Gms [dB] Gma, Gms [dB] 25 Gms 25 0.9GHz 20 20 1.9GHz 15 15 |S21| 10 2 G 2.4GHz ma 10 5 5 0 0 1 2 3 4 5 6 0 0 10 20 C 30 40 50 60 Frequency [GHz] I [mA] Matching |S11|, |S22| = f(f) VD = 3V, I C = 20mA 0 Output Compression Point P−1dB = f(IC) V = 3V, f = 1.8GHz, Z = 50Ω D L 20 18 −5 S11 −10 16 14 |S11|, |S22| [dB] −15 P−1dB [dBm] 6 12 10 8 6 4 S22 −20 −25 2 −30 0 1 2 3 4 5 0 0 10 20 30 40 50 60 Frequency [GHz] IC [mA] Data sheet 8 2002-09-11 BGB540 SPICE Model BGB540-Chip 4 3 Q1 T513 T513 (area factor: 0.1) 2.7kΩ 27kΩ R2 Q2 R1 Q1 Q2 R1 R2 2 1 Transistor Chip Data T513 (Berkley-SPICE 2G.6 Syntax) .MODEL T513 NPN( + IS = 8.2840e-17 + IKF = 0.48731 + NR = 1.0 + NC = 1.1720 + RE = 0.31111 + MJE = 0.46576 + ITF = 0.001 + MJC = 0.30232 + VJS = 0.75 + XTI = 3 BF = 107.5 ISE = 1.115e-11 VAR = 19.705 RBM = 1.3 RC = 4.0 TF = 6.76e-12 PTF = 0 XCJC = 0.3 MJS = 0 FC = 0.73234) NF = 1.0 NE = 3.19 IKR = 0.02 IRB = 0.00072983 CJE = 1.8063e-15 XTF = 0.4219 CJC = 2.34e-13 TR = 2.324E-09 XTB = 0 VAF = 28.383 BR = 5.5 ISC = 1.9237e-17 RB = 5.4 VJE = 0.8051 VTF = 0.23794 VJC = 0.81969 CJS= 0 EG = 1.11 Package Equivalent Circuit L2 Bias C1 C2 4 LBI LB0 LEI LEO LCI LCO 0.36 0.42 0.35 0.27 0.56 0.58 0.5 0.58 120 6.9 134 90 120 15 nH nH nH nH nH nH nH nH fF fF fF fF fF fF CCB L1 C3 LBO B LBI 1 BGB540 Chip 2 LCI 3 LCO C L1 L2 CBE CBE LEI CCE CCB CCE C1 C2 LEO E C3 Valid up to 3GHz Data sheet 9 2002-09-11 BGB540 Typical Application DC Bypass Voltage Supply L VBias RBias RF Out IC 3 C IBias 4 BGB540 IC=10*IBias 1 2 C This proposal demonstrates how to use the BGB540 as a Self-Biased Transistor. As for a discrete Transistor matching circuits have to be applied. A good starting point for various applications are the Application Notes provided for the BFP540. RF In Fig. 3: Typical application circuit Package Outline 0.9 ±0.1 0.20 3 M 2 ±0.2 1.3 ±0.1 4 B B 0.1 max A 1 0.3 +0.1 2 0.15 +0.1 -0.05 0.6 +0.1 0.20 M A GPS05605 Data sheet 10 1.25 ±0.1 2.1±0.1 +0.2 acc. to DIN 6784 2002-09-11