BGB707L7ESD

BGB707L7ESD SiGe:C Wideband MMIC LNA with Integrated ESD Protection Data Sheet Revision 3.2, 2010-06-30 RF & Protection Devices Edition 2010-06-30 Published by Infineon Technologies AG 81726 Munich, Germany © 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BGB707L7ESD BGB707L7ESD SiGe:C Wideband MMIC LNA with Integrated ESD Protection Revision History: 2010-06-30, Revision 3.2 Previous Revision: Revision 3.1 Page 18 - 26 13, 14 27, 30 21, 24 Subjects (major changes since last revision) New template for data sheet layout. Linearity description related to the RF output. Typical DC characteristic curves included. Typical AC characteristic curves included. AC performance tables expanded by 2 frequencies. 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HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Sattelite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2010-03-22 Data Sheet 3 Revision 3.2, 2010-06-30 BGB707L7ESD Table of Contents Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1 2 3 4 5 6 6.1 6.2 6.3 6.3.1 6.3.1.1 6.3.1.2 6.3.2 6.3.3 6.3.4 7 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Product Brief . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Operation Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Typical DC Characteristic Curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . AC Characteristics in FM Radio Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . High-Ohmic FM Radio Antenna . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 Ω FM Radio Antenna . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . AC Characteristics in the SDMB Application . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . AC Characteristics in Test Fixture . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Typical AC Characteristic Curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 12 13 15 15 15 15 16 17 27 Package Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 Data Sheet 4 Revision 3.2, 2010-06-30 BGB707L7ESD List of Figures List of Figures Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 Figure 7 Figure 8 Figure 9 Figure 10 Figure 11 Figure 12 Figure 13 Figure 14 Figure 15 Figure 16 Figure 17 Figure 18 Figure 19 Figure 20 Pinning PG-TSLP-7-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Function Block . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Total Power Dissipation Ptot = f (Ts) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 ICC as a Function of Rext , VCC as Parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 ICC as a Function of VCC , VCtrl = 3 V , Rext as Parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 ICC as a Function of VCtrl , VCC = 3 V , Rext as Parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 ICC as a Function of Temperature , VCtrl = VCC = 3 V , Rext = open . . . . . . . . . . . . . . . . . . . . . . . . . 14 Testing Circuit for Frequencies from 150 MHz to 10 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 S11 as a Function of Frequency, IC as Parameter. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 S22 as a Function of Frequency, IC as Parameter. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Transition Frequency as a Function of IC , VC as Parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 Optimum Source Impedance for Minimum NF as a Function of Frequency, IC as Parameter . . . . 28 Maximum Power Gain as a Function of IC , Frequency as Parameter . . . . . . . . . . . . . . . . . . . . . . 29 Power Gain as a Function of IC , Frequency as Parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 Power Gain and Total Supply Current as a Function of RF Input Power at 3.5 GHz . . . . . . . . . . . 30 Output 3rd Order Intercept Point as a Function of IC at 3.5 GHz, VC as Parameter . . . . . . . . . . . . 30 Package Outline TSLP-7-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 Footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 Marking Layout (top view). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 Tape Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 Data Sheet 5 Revision 3.2, 2010-06-30 BGB707L7ESD List of Tables List of Tables Table 1 Table 2 Table 3 Table 4 Table 5 Table 6 Table 7 Table 8 Table 9 Table 10 Table 11 Table 12 Table 13 Table 14 Table 15 Table 16 Table 17 Pinning Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Maximum Ratings at TA = 25°C (unless otherwise specified) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Operation Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 DC Characteristics at VCC = 3 V, TA = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 AC Characteristics in the FM Radio Application as Described in AN177 . . . . . . . . . . . . . . . . . . . . 15 AC Characteristics in the FM Radio Application as Described in AN181 . . . . . . . . . . . . . . . . . . . 15 AC Characteristics in the SDMB Application as Described in TR122, TA = 25°C . . . . . . . . . . . . . 16 AC Characteristics VC = 3 V, f = 150 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 AC Characteristics VC = 3 V, f = 450 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 AC Characteristics VC = 3 V, f = 900 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 AC Characteristics VC = 3 V, f = 1.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 AC Characteristics VC = 3 V, f = 1.9 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 AC Characteristics VC = 3 V, f = 2.4 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 AC Characteristics VC = 3 V, f = 3.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 AC Characteristics VC = 3 V, f = 5.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 AC Characteristics VC = 3 V, f = 10 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Data Sheet 6 Revision 3.2, 2010-06-30 SiGe:C Wideband MMIC LNA with Integrated ESD Protection BGB707L7ESD 1 • • • • • • • • • • Features High performance general purpose wideband MMIC LNA ESD protection integrated for all pins (3 kV for RF input vs. GND, 2 kV for all other pin combinations, HBM) Integrated active biasing circuit enables stable operation point against temperature- and processing-variations Excellent noise figure from Infineon´s reliable high volume SiGe:C technology High gain and linearity at low current consumption Operation voltage: 1.8 V to 4.0 V Adjustable operation current 2.1 mA to 25 mA by external resistor Power-off function Very small and leadless package TSLP-7-1, 2.0 x 1.3 x 0.4 mm3 Pb-free (RoHS compliant) and halogen-free (WEEE compliant) package Applications As Low Noise Amplifier (LNA) in • • • • • Mobile, portable and fixed connectivity applications: WLAN 802.11a/b/g/n, WiMax 2.5/3.5/5 GHz, UWB, WiFi, Bluetooth Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) and C-band LNB Multimedia applications such as mobile/portable TV, CATV, FM Radio 3G/4G UMTS/LTE mobile phone applications ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Product Name BGB707L7ESD Data Sheet Package TSLP-7-1 7 Marking AZ Revision 3.2, 2010-06-30 BGB707L7ESD Product Brief 2 Product Brief The BGB707L7ESD is a Silicon Germanium Carbon (SiGe:C) low noise amplifier MMIC with integrated ESD protection and active biasing. The device is as flexible as a discrete transistor and features high gain, reduced power consumption and very low distortion for a very wide range of applications. The device is based upon Infineon Technologies cost effective SiGe:C technology and comes in a low profile TSLP-7-1 leadless green package 6 5 4 7 1 2 3 Figure 1 Table 1 Pin 1 2 3 4 5 6 7 Pinning PG-TSLP-7-1 Pinning Table Name Function Supply voltage Bias reference voltage RF input RF output On/Off control voltage Current adjustment pin DC/RF GND VCC VBias RFin RFout VCtrl Adj GND Data Sheet 8 Revision 3.2, 2010-06-30 BGB707L7ESD Product Brief The following function block in Figure 2 shows the principal schematic how the BGB707L7ESD is used in a circuit. The Power On/Off function is controlled by applying VCtrl. By using an external resistor Rext the pre-set current of 2.1 mA (which is adjusted by the integrated biasing when Rext is omitted) can be increased. Base- and collector voltages are applied to the respective pins RFin and RFout by external inductors LB and LC. Figure 2 Function Block Data Sheet 9 Revision 3.2, 2010-06-30 BGB707L7ESD Maximum Ratings 3 Maximum Ratings Maximum Ratings at TA = 25°C (unless otherwise specified) Symbol Min. Values Typ. – – – – – – – – Max. 4.0 3.5 25 2 4.0 100 150 150 mA mA V mW °C °C V – – – – – – – -55 Unit Note / Test Condition – – – – – – – – Table 2 Parameter Supply Voltage VCC ICC IB Vctrl Ptot TJOp TStg TA = -55°C Supply Current at VCC pin DC Current at RF In pin Voltage at Ctrl On/Off pin Total Power Dissipation TS1 Max. – – 6.8 17 – 1.5 – – – – – – – – – – Unit GHz V mA dB dB dB dB dB dB dBm dBm dBm dBm µs µs Note / Test Condition – – – Power @ port1 = -30 dBm – Including 0.1 dB Board losses – – Power @ port2 = -10 dBm – – Input power = -30 dBm – Measured with C2 = 1 nF – Stability measured up to 10 GHz Vcc Icc |S21|² Transducer Gain (off mode) |S21| off NF RLIN RLOUT IREV IP1dB OP1dB IIP3 OIP3 Ton Toff k Data Sheet 16 Revision 3.2, 2010-06-30 BGB707L7ESD Electrical Characteristics 6.3.3 AC Characteristics in Test Fixture For frequencies from 150 MHz to 10 GHz the measurement setup is a test fixture with Bias-T’s in a 50 Ω system according to Figure 8 at VC = 3V, TA = 25 °C. The collector current IC is controlled by an external base voltage VB applied at RFin pin and not by the integrated biasing´s reference voltage VBias. VC controls the collector voltage at RFout pin. This allows direct measurement of the amplifier performance as a function of bias conditions without passive components. Figure 8 Testing Circuit for Frequencies from 150 MHz to 10 GHz Data Sheet 17 Revision 3.2, 2010-06-30 BGB707L7ESD Electrical Characteristics Table 9 Parameter AC Characteristics VC = 3 V, f = 150 MHz Symbol Min. Values Typ. 0.4 0.4 0.5 0.55 17 19 24 27 31.5 33 35 37 Max. dB – – – – – – – – dB – – – – – – – – dB – – – – – – – – dBm – – – – 3.5 4 4.5 3 – – – – dBm – – – – 2 6 14.5 19.5 – – – – Unit Note / Test Condition Minimum Noise Figure NFmin ZS = ZSopt IC = 2.1 mA IC = 3 mA IC = 6 mA IC = 10 mA ZS = ZL = 50 Ω IC = 2.1 mA IC = 3 mA IC = 6 mA IC = 10 mA ZL = ZLopt, ZS = ZSopt IC = 2.1 mA IC = 3 mA IC = 6 mA IC = 10 mA Transducer Gain |S21|² Maximum Power Gain Gms Output 1 dB Compression Point1) OP1dB ICq = 2.1 mA, ICcomp = 11 mA2) ICq = 3 mA, ICcomp = 11 mA ICq = 6 mA, ICcomp = 11 mA ICq = 10 mA, ICcomp = 11 mA Output 3 Order Intercept Point rd OIP3 IC = 2.1 mA IC = 3 mA IC = 6 mA IC = 10 mA 1) OP1dB is the output compression point achieved in a 50 Ω application circuit according to Figure 2 using the integrated biasing. 2) ICq is the quiescent current at small input power levels. ICq increases up to ICcomp as RF input power approaches IP1dB, cf. Figure 15. Data Sheet 18 Revision 3.2, 2010-06-30 BGB707L7ESD Electrical Characteristics Table 10 Parameter AC Characteristics VC = 3 V, f = 450 MHz Symbol Min. Values Typ. 0.45 0.45 0.5 0.6 17 19 24 27 27 28 30.5 32 Max. dB – – – – – – – – dB – – – – – – – – dB – – – – – – – – dBm – – – – 11.5 12 11.5 9.5 – – – – dBm – – – – 2 5.5 14 19.5 – – – – Unit Note / Test Condition Minimum Noise Figure NFmin ZS = ZSopt IC = 2.1 mA IC = 3 mA IC = 6 mA IC = 10 mA ZS = ZL = 50 Ω IC = 2.1 mA IC = 3 mA IC = 6 mA IC = 10 mA ZL = ZLopt, ZS = ZSopt IC = 2.1 mA IC = 3 mA IC = 6 mA IC = 10 mA Transducer Gain |S21|² Maximum Power Gain Gms Output 1 dB Compression Point1) OP1dB ICq = 2.1 mA, ICcomp = 11 mA2) ICq = 3 mA, ICcomp = 14 mA ICq = 6 mA, ICcomp = 16 mA ICq = 10 mA, ICcomp = 15 mA Output 3 Order Intercept Point rd OIP3 IC = 2.1 mA IC = 3 mA IC = 6 mA IC = 10 mA 1) OP1dB is the output compression point achieved in a 50 Ω application circuit according to Figure 2 using the integrated biasing. 2) ICq is the quiescent current at small input power levels. ICq increases up to ICcomp as RF input power approaches IP1dB, cf. Figure 15. Data Sheet 19 Revision 3.2, 2010-06-30 BGB707L7ESD Electrical Characteristics Table 11 Parameter AC Characteristics VC = 3 V, f = 900 MHz Symbol Min. Values Typ. 0.55 0.55 0.6 0.7 17 19 23.5 26 24 25 27.5 29 Max. dB – – – – – – – – dB – – – – – – – – dB – – – – – – – – dBm – – – – 11 11 10 8.5 – – – – dBm – – – – 3.5 8 17 19.5 – – – – Unit Note / Test Condition Minimum Noise Figure NFmin ZS = ZSopt IC = 2.1 mA IC = 3 mA IC = 6 mA IC = 10 mA ZS = ZL = 50 Ω IC = 2.1 mA IC = 3 mA IC = 6 mA IC = 10 mA ZL = ZLopt, ZS = ZSopt IC = 2.1 mA IC = 3 mA IC = 6 mA IC = 10 mA Transducer Gain |S21|² Maximum Power Gain Gms Output 1 dB Compression Point1) OP1dB ICq = 2.1 mA, ICcomp = 13 mA2) ICq = 3 mA, ICcomp = 15 mA ICq = 6 mA, ICcomp = 14 mA ICq = 10 mA, ICcomp = 14 mA Output 3 Order Intercept Point rd OIP3 IC = 2.1 mA IC = 3 mA IC = 6 mA IC = 10 mA 1) OP1dB is the output compression point achieved in a 50 Ω application circuit according to Figure 2 using the integrated biasing. 2) ICq is the quiescent current at small input power levels. ICq increases up to ICcomp as RF input power approaches IP1dB, cf. Figure 15. Data Sheet 20 Revision 3.2, 2010-06-30 BGB707L7ESD Electrical Characteristics Table 12 Parameter AC Characteristics VC = 3 V, f = 1.5 GHz Symbol Min. Values Typ. 0.6 0.6 0.6 0.7 16 18.5 22.5 24.5 21.5 23 25.5 27 Max. dB – – – – – – – – dB – – – – – – – – dB – – – – – – – – dBm – – – – 10.5 10 9 8 – – – – dBm – – – – 3.5 8 17 19.5 – – – – Unit Note / Test Condition Minimum Noise Figure NFmin ZS = ZSopt IC = 2.1 mA IC = 3 mA IC = 6 mA IC = 10 mA ZS = ZL = 50 Ω IC = 2.1 mA IC = 3 mA IC = 6 mA IC = 10 mA ZL = ZLopt, ZS = ZSopt IC = 2.1 mA IC = 3 mA IC = 6 mA IC = 10 mA Transducer Gain |S21|² Maximum Power Gain Gms Output 1 dB Compression Point1) OP1dB ICq = 2.1 mA, ICcomp = 14 mA2) ICq = 3 mA, ICcomp = 16 mA ICq = 6 mA, ICcomp = 15 mA ICq = 10 mA, ICcomp = 15 mA Output 3 Order Intercept Point rd OIP3 IC = 2.1 mA IC = 3 mA IC = 6 mA IC = 10 mA 1) OP1dB is the output compression point achieved in a 50 Ω application circuit according to Figure 2 using the integrated biasing. 2) ICq is the quiescent current at small input power levels. ICq increases up to ICcomp as RF input power approaches IP1dB, cf. Figure 15. Data Sheet 21 Revision 3.2, 2010-06-30 BGB707L7ESD Electrical Characteristics Table 13 Parameter AC Characteristics VC = 3 V, f = 1.9 GHz Symbol Min. Values Typ. 0.6 0.6 0.6 0.7 16 18 21.5 23 21 22 24 26 Max. dB – – – – – – – – dB – – – – – – – – dB – – – – – – – – dBm – – – – 10 10 8.5 8 – – – – dBm – – – – 3.5 7.5 17 19.5 – – – – Unit Note / Test Condition Minimum Noise Figure NFmin ZS = ZSopt IC = 2.1 mA IC = 3 mA IC = 6 mA IC = 10 mA ZS = ZL = 50 Ω IC = 2.1 mA IC = 3 mA IC = 6 mA IC = 10 mA ZL = ZLopt, ZS = ZSopt IC = 2.1 mA IC = 3 mA IC = 6 mA IC = 10 mA Transducer Gain |S21|² Maximum Power Gain Gms Output 1 dB Compression Point1) OP1dB ICq = 2.1 mA, ICcomp = 15 mA2) ICq = 3 mA, ICcomp = 16 mA ICq = 6 mA, ICcomp = 14 mA ICq = 10 mA, ICcomp = 14 mA Output 3 Order Intercept Point rd OIP3 IC = 2.1 mA IC = 3 mA IC = 6 mA IC = 10 mA 1) OP1dB is the output compression point achieved in a 50 Ω application circuit according to Figure 2 using the integrated biasing. 2) ICq is the quiescent current at small input power levels. ICq increases up to ICcomp as RF input power approaches IP1dB, cf. Figure 15. Data Sheet 22 Revision 3.2, 2010-06-30 BGB707L7ESD Electrical Characteristics Table 14 Parameter AC Characteristics VC = 3 V, f = 2.4 GHz Symbol Min. Values Typ. 0.65 0.6 0.6 0.7 15.5 17 20 21.5 20 21 23 25 Max. dB – – – – – – – – dB – – – – – – – – dB – – – – – – – – dBm – – – – 10 10 9 8 – – – – dBm – – – – 4.5 9 17.5 19.5 – – – – Unit Note / Test Condition Minimum Noise Figure NFmin ZS = ZSopt IC = 2.1 mA IC = 3 mA IC = 6 mA IC = 10 mA ZS = ZL = 50 Ω IC = 2.1 mA IC = 3 mA IC = 6 mA IC = 10 mA ZL = ZLopt, ZS = ZSopt IC = 2.1 mA IC = 3 mA IC = 6 mA IC = 10 mA Transducer Gain |S21|² Maximum Power Gain Gms Output 1 dB Compression Point1) OP1dB ICq = 2.1 mA, ICcomp = 15 mA2) ICq = 3 mA, ICcomp = 16 mA ICq = 6 mA, ICcomp = 14 mA ICq = 10 mA, ICcomp = 14 mA Output 3 Order Intercept Point rd OIP3 IC = 2.1 mA IC = 3 mA IC = 6 mA IC = 10 mA 1) OP1dB is the output compression point achieved in a 50 Ω application circuit according to Figure 2 using the integrated biasing. 2) ICq is the quiescent current at small input power levels. ICq increases up to ICcomp as RF input power approaches IP1dB, cf. Figure 15. Data Sheet 23 Revision 3.2, 2010-06-30 BGB707L7ESD Electrical Characteristics Table 15 Parameter AC Characteristics VC = 3 V, f = 3.5 GHz Symbol Min. Values Typ. 0.8 0.75 0.7 0.75 13.5 15.5 18 19 18.5 20 22 23.5 Max. dB – – – – – – – – dB – – – – – – – – dB – – – – – – – – dBm – – – – 10 10 9 8 – – – – dBm – – – – 5.5 12 17.5 19 – – – – Unit Note / Test Condition Minimum Noise Figure NFmin ZS = ZSopt IC = 2.1 mA IC = 3 mA IC = 6 mA IC = 10 mA ZS = ZL = 50 Ω IC = 2.1 mA IC = 3 mA IC = 6 mA IC = 10 mA ZL = ZLopt, ZS = ZSopt IC = 2.1 mA IC = 3 mA IC = 6 mA IC = 10 mA Transducer Gain |S21|² Maximum Power Gain Gms Output 1 dB Compression Point1) OP1dB ICq = 2.1 mA, ICcomp = 16 mA2) ICq = 3 mA, ICcomp = 16 mA ICq = 6 mA, ICcomp = 15 mA ICq = 10 mA, ICcomp = 15 mA Output 3 Order Intercept Point rd OIP3 IC = 2.1 mA IC = 3 mA IC = 6 mA IC = 10 mA 1) OP1dB is the output compression point achieved in a 50 Ω application circuit according to Figure 2 using the integrated biasing. 2) ICq is the quiescent current at small input power levels. ICq increases up to ICcomp as RF input power approaches IP1dB, cf. Figure 15. Data Sheet 24 Revision 3.2, 2010-06-30 BGB707L7ESD Electrical Characteristics Table 16 Parameter AC Characteristics VC = 3 V, f = 5.5 GHz Symbol Min. Values Typ. 1.05 1 0.9 0.95 11.5 13 15 15.5 17.5 18.5 20 19 Max. dB – – – – – – – – dB – – – – – – – – dB – – – – – – – – dBm – – – – 10.5 10 9 8 – – – – dBm – – – – 6.5 12 22 21 – – – – Unit Note / Test Condition Minimum Noise Figure NFmin ZS = ZSopt IC = 2.1 mA IC = 3 mA IC = 6 mA IC = 10 mA ZS = ZL = 50 Ω IC = 2.1 mA IC = 3 mA IC = 6 mA IC = 10 mA ZL = ZLopt, ZS = ZSopt IC = 2.1 mA IC = 3 mA IC = 6 mA IC = 10 mA Transducer Gain |S21|² Maximum Power Gain Gms Output 1 dB Compression Point1) OP1dB ICq = 2.1 mA, ICcomp = 17 mA2) ICq = 3 mA, ICcomp = 17 mA ICq = 6 mA, ICcomp = 15 mA ICq = 10 mA, ICcomp = 15 mA Output 3 Order Intercept Point rd OIP3 IC = 2.1 mA IC = 3 mA IC = 6 mA IC = 10 mA 1) OP1dB is the output compression point achieved in a 50 Ω application circuit according to Figure 2 using the integrated biasing. 2) ICq is the quiescent current at small input power levels. ICq increases up to ICcomp as RF input power approaches IP1dB, cf. Figure 15. Data Sheet 25 Revision 3.2, 2010-06-30 BGB707L7ESD Electrical Characteristics Table 17 Parameter AC Characteristics VC = 3 V, f = 10 GHz Symbol Min. Values Typ. 2 1.8 1.5 1.5 5.5 7 9 10 14.5 15 15.5 15.5 Max. dB – – – – – – – – dB – – – – – – – – dB – – – – – – – – dBm – – – – 6 6 4 4 – – – – dBm – – – – 2.5 7 19.5 18 – – – – Unit Note / Test Condition Minimum Noise Figure NFmin ZS = ZSopt IC = 2.1 mA IC = 3 mA IC = 6 mA IC = 10 mA ZS = ZL = 50 Ω IC = 2.1 mA IC = 3 mA IC = 6 mA IC = 10 mA ZL = ZLopt, ZS = ZSopt IC = 2.1 mA IC = 3 mA IC = 6 mA IC = 10 mA Transducer Gain |S21|² Maximum Power Gain Gms Output 1 dB Compression Point1) OP1dB ICq = 2.1 mA, ICcomp = 16 mA2) ICq = 3 mA, ICcomp = 16 mA ICq = 6 mA, ICcomp = 15 mA ICq = 10 mA, ICcomp = 15 mA Output 3 Order Intercept Point rd OIP3 IC = 2.1 mA IC = 3 mA IC = 6 mA IC = 10 mA 1) OP1dB is the output compression point achieved in a 50 Ω application circuit according to Figure 2 using the integrated biasing. 2) ICq is the quiescent current at small input power levels. ICq increases up to ICcomp as RF input power approaches IP1dB, cf. Figure 15. Data Sheet 26 Revision 3.2, 2010-06-30 BGB707L7ESD Electrical Characteristics 6.3.4 Typical AC Characteristic Curves The measurement setup is the same as described in Figure 8 except for Figure 15 where compression is measured in a 50 Ohm application circuit according to Figure 2 using the integrated biasing; VC = 3V, TA = 25 °C. 1 1.5 0.5 0.4 0.3 0.2 0.03 to 10 GHz 2 3 4 5 step: 1 GHz 0.1 0 −0.1 −0.2 −0.3 −0.4 −0.5 0.1 0.2 0.3 0.4 0.5 1 1.5 10 45 2 3 −10 −5 −4 −3 2.1 mA −2 −1.5 −1 3.0 mA 6.0 mA 10 mA Figure 9 S11 as a Function of Frequency, IC as Parameter 1 1.5 0.5 0.4 0.3 0.2 0.03 to 10 GHz 2 3 4 5 step: 1 GHz 0.1 0 −0.1 −0.2 −0.3 −0.4 −0.5 0.1 0.2 0.3 0.4 0.5 1 1.5 10 45 2 3 −10 −5 −4 −3 2.1 mA −2 −1.5 −1 3.0 mA 6.0 mA 10 mA Figure 10 Data Sheet S22 as a Function of Frequency, IC as Parameter 27 Revision 3.2, 2010-06-30 BGB707L7ESD Electrical Characteristics 45 4.00V 3.00V 40 35 fT [GHz] 30 25 1.80V 20 15 0 5 10 15 IC [mA] 20 25 30 Figure 11 Transition Frequency as a Function of IC , VC as Parameter 1 1.5 0.5 0.4 0.3 5.5GHz 2 3 3.5GHz 2.4GHz 1.9GHz 1.5GHz 0.9GHz 4 5 10 0.2 0.1 0 −0.1 10GHz 0.1 0.2 0.3 0.4 0.5 1 1.5 I = 10mA c 2 3 45 0.45GHz 0.15GHz I = 6.0mA c c Ic = 2.1mA I = 3.0mA −10 −0.2 −0.3 −0.4 −0.5 −5 −4 −3 −2 −1.5 −1 Figure 12 Optimum Source Impedance for Minimum NF as a Function of Frequency, IC as Parameter Data Sheet 28 Revision 3.2, 2010-06-30 BGB707L7ESD Electrical Characteristics 42 39 36 0.45GHz 33 30 Gmax [dB] 27 24 21 5.50GHz 18 15 12 9 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 IC [mA] 10.00GHz 0.90GHz 1.50GHz 1.90GHz 2.40GHz 3.50GHz 0.15GHz Figure 13 Maximum Power Gain as a Function of IC , Frequency as Parameter 36 33 30 27 24 S21 [dB] 21 18 15 12 9 6 3 0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 IC [mA] 10.00GHz 5.50GHz 0.15GHz 0.45GHz 0.90GHz 1.50GHz 1.90GHz 2.40GHz 3.50GHz Figure 14 Power Gain as a Function of IC , Frequency as Parameter Data Sheet 29 Revision 3.2, 2010-06-30 BGB707L7ESD Electrical Characteristics 19 18 17 16 15 14 13 12 30 28 P1dB, 10mA 26 24 22 20 18 Gain [dB] 11 10 9 8 7 6 5 4 3 2 1 0 -40 -37.5 -35 -32.5 -30 -27.5 -25 -22.5 -20 -17.5 -15 -12.5 -10 P1dB, 2.1mA 16 14 12 10 8 Gain , Icq = 2.1mA Gain , Icq = 10mA Icc , Icq = 2.1mA Icc , Icq = 10mA -7.5 -5 -2.5 0 6 4 2 0 Input power [dBm] Figure 15 Power Gain and Total Supply Current as a Function of RF Input Power at 3.5 GHz 22 20 18 16 OIP3 [dBm] 14 12 10 8 6 4 4V 3V 1.8V 0 1 2 3 4 5 6 7 IC [mA] 8 9 10 11 12 Figure 16 Output 3rd Order Intercept Point as a Function of IC at 3.5 GHz, VC as Parameter Data Sheet 30 Revision 3.2, 2010-06-30 Current [mA] BGB707L7ESD Package Information 7 Package Information Top view 0.4 0.05 MAX. +0.1 Bottom view 1.3 ±0.05 1 ±0.05 4 5 6 1.7 ±0.05 6 x 0.2 ±0.035 1) 7 3 Pin 1 marking 2 1 6 x 0.2 ±0.035 1) TSLP-7-1-PO V04 1) Dimension applies to plated terminal Figure 17 Package Outline TSLP-7-1 NSM D 0.2 0.2 0.2 SMD 1.4 1.4 1.4 0.2 0.2 1.9 0.25 1.4 0.2 0.25 2 ±0.05 1.2 ±0.035 1) 1.1 ±0.035 1) 0.2 1.9 1.9 0.2 0.25 1.9 0.2 0.2 0.2 0.2 0.3 0.3 Copper 0.3 0.25 Stencil apertures R0.1 0.3 0.3 Copper 0.3 0.2 0.25 0.25 0.25 Stencil apertures R0.1 Solder mask Solder mask TSLP-7-1-FP V01 Figure 18 Footprint AZ AX BGB707L7ESD Type Code Figure 19 Marking Layout (top view) 4 0.5 2.18 Pin 1 marking 1.45 TSLP-7-1-TP V03 Figure 20 Data Sheet Tape Dimensions 31 Revision 3.2, 2010-06-30 8 0.2 0.25 www.infineon.com Published by Infineon Technologies AG