BGR405

D a t a S h e e t , R e v . 1 . 0 , J u n i 2 00 8 BGR405 NPN Silicon RF Transistor With Bias Circuitry S m a l l S i g n a l D i s c r et e s Edition 2008-06-06 Published by Infineon Technologies AG, 85579 Neubiberg, Germany © Infineon Technologies AG 2008. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BGR405 BGR405, NPN Silicon RF Transistor With Bias Circuitry Revision History: 2008-06-06, Rev. 1.0 Prevision History: no previous version Page Subjects (major changes since last revision) Trademarks SIEGET® is a registered trademark of Infineon Technologies AG. Data Sheet 3 Rev. 1.0, 2008-06-06 BGR405 NPN Silicon RF Transistor With Bias Circuitry* 1 NPN Silicon RF Transistor With Bias Circuitry* Features • Noise figure NF = 1.0 dB at 0.4 GHz • Gain S21 = 7.5 dB at 0.4 GHz • On chip bias circuitry, 0.85 mA bias current at VCC = 1.2 V • SIEGET ® 25 GHz fT-Line • Pb-free (RoHS compliant) package * Short term description 3 4 1 2 Applications • LNAs 2 Description The BGR405 is a monolithic silicon amplifier with a NPN silicon RF transistor and integrated resistors for biasing. Type BGR405 Package SOT343 Marking AVs Note: ESD (Electrostatic discharge) sensitive device, observe handling precaution! Figure 1 Circuit diagram Note: Due to design there is an additional diode between emitter and collector, which does not effect normal operation for common emitter configuration. Data Sheet 4 Rev. 1.0, 2008-06-06 BGR405 Description Table 1 Pin 1 2 3 4 Pinning table Function RFIN GND RFOUT VCC 2.1 Maximum Ratings Note: All Voltages refer to GND-node Table 2 Parameter Current at pin VCC Voltage at pin VCC Current at pin RFIN Voltage at pin RFIN Current at pin RFOUT 1) Maximum ratings Symbol Value 12 5 0.8 2 12 4.1 50 -65... 150 -65... 150 Unit mA V mA V mA V mW °C °C Voltage at pin RFOUT Total power dissipation2) TS = 120 °C Operation junction temperature range Storage junction temperature range ICC VCC IB VB IOUT VOUT Ptot Tjo Tjstg 1) Applicable if VCC and RFOUT are shorted, otherwise a coupling capacitor at RFOUT is demanded 2) TS is measured on the emitter (GND) lead at the soldering point to the pcb Note: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions even only for a short moment may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. Absolute maximum ratings typically differ heavily from recommended operation conditions. 2.2 Thermal Resistance Table 3 Parameter Thermal Resistance Symbol 1) Value Unit K/W Junction - soldering point RthJS ≤ 595 1) For calculation of RthJA please refer to Application Note Thermal Resistance. Data Sheet 5 Rev. 1.0, 2008-06-06 BGR405 Electrical Characteristics 3 Electrical Characteristics DC characteristics at TA = 25 °C, unless otherwise specified Symbol Min. Values Typ. 0.85 Max. 1.1 mA 0.6 Unit Note / Test Condition Table 4 Parameter Device current Table 5 Parameter Insertion power gain Reverse isolation Noise figure, ZS = ZSopt Thid order intercept point at the output1) ICC VCC = 1.2 V AC characteristics (measured in test circuit Figure 2; verified by random sampling) TA = 25 °C, VCC = 1.2 V, Z0 = 50 Ω, unless otherwise specified Symbol Min. S21 Values Typ. 7.5 7.0 -37 -25 1.0 1.6 -9 14.5 1 dB compression point at the output Max. dB dB dB dBm Unit Note / Test Condition S12 NF OIP3 OP-1dB -19 -0.5 dBm Return loss input Return loss output S11 S22 -0.4 -1.8 -4.0 -6.0 dB dB F = 0.4 GHz f = 1.8 GHz F = 0.4 GHz f = 1.8 GHz F = 0.4 GHz f = 1.8 GHz F = 0.4 GHz, VCC = 1.2 V f = 1.8 GHz, VCC = 4 V F = 0.4 GHz, VCC = 1.2 V f = 1.8 GHz, VCC = 4 V F = 0.4 GHz f = 1.8 GHz F = 0.4 GHz f = 1.8 GHz 1) OIP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 Ω from 0.1 MHz to 6 GHz. Figure 2 Data Sheet BGR405 test circuit 6 Rev. 1.0, 2008-06-06 BGR405 Package Information 4 Package Information 0.9 ±0.1 2 ±0.2 1.3 4 3 0.15 1 0.3 +0.1 -0.05 4x 0.1 M +0.1 0.6 -0.05 0.1 MAX. 0.1 A 2 0.1 MIN. 0.15 -0.05 0.2 M A SOT343-PO V08 +0.1 Figure 3 Package Outline SOT343 0.6 0.8 1.15 0.9 SOT343-FP V08 Figure 4 Footprint of SOT343 4 0.2 Pin 1 2.15 2.3 8 1.6 1.1 SOT323-TP V02 Figure 5 Tape of SOT343 Data Sheet 7 1.25 ±0.1 2.1 ±0.1 Rev. 1.0, 2008-06-06