BGR420

D a t a S h e e t , R e v . 1 . 0 , J u n i 2 00 8 BGR420 NPN Silicon RF Transistor With Bias Circuitry S m a l l S i g n a l D i s c r et e s Edition 2008-06-06 Published by Infineon Technologies AG, 85579 Neubiberg, Germany © Infineon Technologies AG 2008. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BGR420 BGR420, NPN Silicon RF Transistor With Bias Circuitry Revision History: 2008-06-06, Rev. 1.0 Prevision History: no previous version Page Subjects (major changes since last revision) Trademarks SIEGET® is a registered trademark of Infineon Technologies AG. Data Sheet 3 Rev. 1.0, 2008-06-06 BGR420 NPN Silicon RF Transistor With Bias Circuitry* 1 NPN Silicon RF Transistor With Bias Circuitry* Features • Noise figure NF = 1.5 dB at 0.4 GHz • Gain S21 = 26 dB at 0.4 GHz • On chip bias circuitry, 13 mA bias current at VCC = 3.6 V; VBB = 2.8 V • SIEGET ® 25 GHz fT-Line • Pb-free (RoHS compliant) package * Short term description 3 4 1 2 Applications • LNAs 2 Description The BGR420 is a monolithic silicon amplifier with a NPN silicon RF transistor and integrated resistors for biasing. Type BGR420 Package SOT343 Marking AWs Note: ESD (Electrostatic discharge) sensitive device, observe handling precaution! Figure 1 Circuit diagram Note: Due to design there is an additional diode between emitter and collector, which does not affect normal operation for common emitter configuration. Data Sheet 4 Rev. 1.0, 2008-06-06 BGR420 Description Table 1 Pin 1 2 3 4 Pinning table Function RFIN GND RFOUT (VCC) VBB 2.1 Maximum Ratings Note: All Voltages refer to GND-node Table 2 Parameter Current at pin VCC Voltage at pin VCC Current at pin VBB Voltage at pin VBB Current at pin RFIN Voltage at pin RFIN Total power dissipation1) TS = 115 °C Operation junction temperature range Maximum ratings Symbol Value 25 13 2.2 8 3 5 120 -65... 150 Unit mA V mA V mA V mW °C °C ICC VCC IBB VBB IIN VIN Ptot Tjo Storage junction temperature range Tjstg -65... 150 1) TS is measured on the emitter (GND) lead at the soldering point to the pcb Note: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions even only for a short moment may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. Absolute maximum ratings typically differ heavily from recommended operation conditions 2.2 Thermal Resistance Table 3 Parameter Thermal Resistance Symbol 1) Value Unit K/W Junction - soldering point RthJS ≤ 290 1) For calculation of RthJA please refer to Application Note Thermal Resistance. Data Sheet 5 Rev. 1.0, 2008-06-06 BGR420 Electrical Characteristics 3 Electrical Characteristics DC characteristics at TA = 25 °C, unless otherwise specified Symbol Min. Values Typ. Max. 10 7 13 20 µA mA Unit Note / Test Condition Table 4 Parameter VCC-GND cutoff current Current at pin VCC ICC ICC VCC = 13 V, IBB = 0, VIN = 0 VBB = 2.8 V, IIN = 0, VCC = 3.6 V Table 5 Parameter AC characteristics (measured in test circuit Figure 2; verified by random sampling) TA = 25 °C, VBB = 2.8 V, VCC = 3.6 V, Z0 = 50 Ω, unless otherwise specified Symbol Min. Insertion power gain Reverse isolation Noise figure, ZS = ZSopt Third order intercept point at the output1) 1 dB compression point at the output Return loss input Return loss output S21 Values Typ. 26.0 15.5 -32.5 -23.4 1.5 1.7 21 23 5.5 7.4 -7.3 -11 -2.5 -9.5 Max. dB dB dB dBm dBm dB dB Unit Note / Test Condition S12 NF OIP3 OP-1dB S11 S22 f = 0.4 GHz f = 1.8 GHz f = 0.4 GHz f = 1.8 GHz f = 0.4 GHz f = 1.8 GHz f = 0.4 GHz f = 1.8 GHz f = 0.4 GHz f = 1.8 GHz f = 0.4 GHz f = 1.8 GHz f = 0.4 GHz f = 1.8 GHz 1) OIP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 Ω from 0.1 MHz to 6 GHz. Figure 2 Data Sheet BGR420 test circuit 6 Rev. 1.0, 2008-06-06 BGR420 Package Information 4 Package Information 0.9 ±0.1 2 ±0.2 1.3 4 3 0.15 1 0.3 +0.1 -0.05 4x 0.1 M +0.1 0.6 -0.05 0.1 MAX. 0.1 A 2 0.1 MIN. 0.15 -0.05 0.2 M A SOT343-PO V08 +0.1 Figure 3 Package Outline SOT343 0.6 0.8 1.15 0.9 SOT343-FP V08 Figure 4 Footprint of SOT343 4 0.2 Pin 1 2.15 2.3 8 1.6 1.1 SOT323-TP V02 Figure 5 Tape of SOT343 Data Sheet 7 1.25 ±0.1 2.1 ±0.1 Rev. 1.0, 2008-06-06