BGS12A

P re li m i n a r y D a t a S h e e t , V 1 . 1 , S e p . 2 00 7 B G S 1 2A SPDT RF Switch S m a l l S i g n a l D i s c r et e s Edition 2007-09-14 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BGS12A SPDT RF Switch BGS12A Revision History: 2007-09-14, V1.1 Previous Version: 2006-10-19, V1.0 Page All Subjects (major changes since last revision) Document layout change Preliminary Data Sheet 3 V1.1, 2007-09-14 BGS12A SPDT RF Switch BGS12A BGS12A Features • Low insertion loss • High port-to-port-isolation • Low harmonic generation • On-chip control logic • Lead free solder bumps • High ESD robustness • No external components required • General purpose switch for applications up to 3 GHz • Pb-free (RoHS compliant) package Description The BGS12A General Purpose RF MOS switch is designed to cover a broad range of applications from 0.1 to 3 GHz. The symmetric design of its single pole double throw configuration, as shown in Figure 1 offers high design flexibility. This single supply chip integrates on-chip CMOS logic driven by a simple, single-pin CMOS or TTL compatible control input signal. The 0.1 dB compression point exceeds the switch’s maximum input power level of 21 dBm, resulting in linear performance at all signal levels. The RF switch has a very low insertion loss of 0.3 dB in the 1 GHz and 0.6 dB in the 2 GHz range. Unlike GaAs technology, external DC blocking capacitors at the RF ports are only required if DC voltage is applied externally. The BGS12A RF switch is manufactured in Infineon’s patented MOS technology, offering the performance of GaAs with the economy and integration of conventional CMOS including the inherent higher ESD robustness. Figure 1 Type BGS12A Functional Diagram Package FWLP-6-1 Marking 12 Chip N0735 Preliminary Data Sheet 4 V1.1, 2007-09-14 BGS12A SPDT RF Switch BGS12A Table 1 Parameter Maximum Ratings Symbol Min. Values Typ. Max. 150 5 24 1000 100 °C V dBm V -65 Unit Note / Test Condition Storage temperature range DC Voltage at all pins to GND RF power max. at all RF ports ESD Capability Human Body-Model IEC61340-3-1 Machine-Model IEC61340-3-2 Table 2 Parameter Ambient temperature RF Frequency Control voltage low Control voltage high Supply voltage 1) Tstg VDC PIN VESD Operation Ranges Symbol Min. Values Typ. Max. 85 3 0.3 2.8 2.8 350 30 15 18 21 °C GHz V V V µA µA dBm -30 0.1 -0.3 1.4 tbd 80 Unit Note / Test Condition Current consumption Vdd Pin (over temperature) Current Consumption Vctrl Pin Power Range (VSWR ∞: 1)) (VSWR 3: 1) (VSWR 1: 1) TA f VCtrL VCtrlH Vdd IVdd ICtrl Pin 1) Supply voltage must be connected before Control Voltage Preliminary Data Sheet 5 V1.1, 2007-09-14 BGS12A SPDT RF Switch BGS12A Table 3 Pin 1 2 3 4 5 6 Pin description Name RF1 GND RF2 CTRL RFIN Vdd Description RF Port 1 Out Ground RF Port 2 Out Control Pin RF Port In Supply Voltage Figure 2 Table 4 Ctrl 1 0 1 Pinning Truth Table RF 1 1 0 RF 2 0 1 Preliminary Data Sheet 6 V1.1, 2007-09-14 BGS12A SPDT RF Switch BGS12A Electrical Specifications • • • • • Termination port impedance: Z0 = 50 Ω Temperature range: T = 25 °C Supply Voltage: Vdd = 2.8 V Pin = 15 dBm Across operating range of control voltages: VCtrH = 1.4...2.8 V Electrical Characteristics Symbol Min. Insertion Loss 1) Table 5 Parameter Values Typ. 0.3 0.6 0.4 0.8 Max. Unit dB dB dB dB dB dB Note / Test Condition IL Return Loss Isolation RFin - RF1 Isolation RFin - RF2 Isolation RF1 - RF2 Isolation RF ports - Vdd, Vctrl RL ISORFin-RF1 ISORFin-RF2 ISORF1-RF2 ISORF-DC 15 10 30 22 30 22 30 28 30 20 34 27 34 27 43 34 35 35 -75 -80 -50 -50 4 4 120 21 dB dB dB dB dB dB dB dB dBm dBm µs µs µA dBm Harmonic Generation up to 12.75 GHz PHarm On Switching Time (10-90%) RF Off Switching Time (10-90%) RF Current Consumption at Vdd Pin Input 0.1 dB compression 1) With external matching at antenna port ton toff Idd P0.1dB f = 1 GHz TX f = 2 GHz TX f = 1 GHz TX, TA = 85 °C f = 2 GHz TX, TA = 85 °C f = 1 GHz f = 2 GHz f = 1 GHz f = 2 GHz f = 1 GHz f = 2 GHz f = 1 GHz f = 2 GHz f = 1 GHz f = 2 GHz f = 1 GHz f = 2 GHz f = 1 GHz f = 1 GHz f = 1 GHz Preliminary Data Sheet 7 V1.1, 2007-09-14 BGS12A SPDT RF Switch BGS12A Package Outlines Figure 3 Package outline 110 ± 13µm bump height: 90 ± 14µm Solderbump Material: SnAg (96.5/2.5) UBM 80 ±4 µm chip height: 250µm BGS 12A _Solder _Bumps.vsd Figure 4 Solder bumps Dimensions in mm You can find all of our packages, sorts of packing and others in our Infineon Internet Page “Products”: http://www.infineon.com/products. Preliminary Data Sheet 8 V1.1, 2007-09-14