BGX50A
Silicon Switching Diode Array
3
Bridge configuration High-speed switching diode chip
4 2
2
1
VPS05178
3
1
4
EHA00007
Type BGX50A
Marking U1s
Pin Configuration 1=C1/C2 2=A1/C4 3=A3/A4 4=A2/C3
Package SOT143
Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage Forward current Total power dissipation, TS = 74 °C Junction temperature Storage temperature Symbol VR VRM IF Ptot Tj Tstg Value 50 70 140 210 150 65 ... 150 mA mW °C Unit V
Thermal Resistance Junction - soldering point 1) RthJS
360
K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
1
Jul-31-2001
BGX50A
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Forward voltage IF = 100 mA Reverse current VR = 50 V Reverse current VR = 50 V, TA = 150 °C
AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time t rr , 6 ns CD 1.5 pF
Symbol min. VF IR IR -
Values typ. max. 1.3 0.2 100
Unit
V µA
Test circuit for reverse recovery time
D.U.T.
ΙF
2
Pulse generator: tp = 100ns, D = 0.05, tr = 0.6ns, Ri = 50
I F = 10 mA, IR = 10 mA, R L = 100 measured at IR = 1mA
Oscillograph
EHN00019
Oscillograph: R = 50 , tr = 0.35ns, C 1pF
Jul-31-2001
BGX50A
Forward current IF = f (TS )
Reverse current IR = f (TA)
160
mA
ΙR
10 5 nA
BGX 50A
EHB00146
120
10 4 5 max.
V R = 70 V
IF
100
80
10 3 5
70V
25V
60
40
10 2 5
typ.
20
0 0
15
30
45
60
75
90 105 120 °C
150
10 1
0
50
100
˚C TA
150
TS
Forward current IF = f (VF ) TA = 25°C
150
BGX 50A EHB00147
Peak forward current IFM = f (t p) TA = 25°C
10 2
BGX 50A EHB00148
ΙF
mA
Ι FM
A D=
tp T
tp T
100
10 1 5
typ max
D= 0.005 0.01 0.02 0.05 0.1 0.2
50
10 0 5
0
0
0.5
1.0
V VF
1.5
10 -1 -6 10
10 -5
10 -4
10 -3
10 -2 t
s
10 0
3
Jul-31-2001
BGX50A
Forward voltage VF = f (TA)
1.0 V
BGX 50A
EHB00149
VF
Ι F = 100 mA
10 mA 1 mA 0.1 mA
0.5
0
0
50
100 TA
˚C
150
4
Jul-31-2001
很抱歉,暂时无法提供与“BGX50A”相匹配的价格&库存,您可以联系我们找货
免费人工找货