BGX50A

BGX50A Silicon Switching Diode Array 3 Bridge configuration High-speed switching diode chip

4 2 2 1 VPS05178 3 1 4 EHA00007 Type BGX50A Marking U1s Pin Configuration 1=C1/C2 2=A1/C4 3=A3/A4 4=A2/C3 Package SOT143 Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage Forward current Total power dissipation, TS = 74 °C Junction temperature Storage temperature Symbol VR VRM IF Ptot Tj Tstg Value 50 70 140 210 150 65 ... 150 mA mW °C Unit V Thermal Resistance Junction - soldering point 1) RthJS
360 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance 1 Jul-31-2001 BGX50A Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Forward voltage IF = 100 mA Reverse current VR = 50 V Reverse current VR = 50 V, TA = 150 °C AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time t rr , 6 ns CD 1.5 pF Symbol min. VF IR IR - Values typ. max. 1.3 0.2 100 Unit V µA Test circuit for reverse recovery time D.U.T. ΙF 2

Pulse generator: tp = 100ns, D = 0.05, tr = 0.6ns, Ri = 50
I F = 10 mA, IR = 10 mA, R L = 100 measured at IR = 1mA Oscillograph EHN00019 Oscillograph: R = 50 , tr = 0.35ns, C 1pF Jul-31-2001 BGX50A Forward current IF = f (TS ) Reverse current IR = f (TA) 160 mA ΙR 10 5 nA BGX 50A EHB00146 120 10 4 5 max. V R = 70 V IF 100 80 10 3 5 70V 25V 60 40 10 2 5 typ. 20 0 0 15 30 45 60 75 90 105 120 °C 150 10 1 0 50 100 ˚C TA 150 TS Forward current IF = f (VF ) TA = 25°C 150 BGX 50A EHB00147 Peak forward current IFM = f (t p) TA = 25°C 10 2 BGX 50A EHB00148 ΙF mA Ι FM A D= tp T tp T 100 10 1 5 typ max D= 0.005 0.01 0.02 0.05 0.1 0.2 50 10 0 5 0 0 0.5 1.0 V VF 1.5 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 t s 10 0 3 Jul-31-2001 BGX50A Forward voltage VF = f (TA) 1.0 V BGX 50A EHB00149 VF Ι F = 100 mA 10 mA 1 mA 0.1 mA 0.5 0 0 50 100 TA ˚C 150 4 Jul-31-2001