BSB015N04NX3G

BSB015N04NX3 G OptiMOSTM3 Power-MOSFET Features • Optimized for high switching frequency DC/DC converter • Very low on-resistance R DS(on) • Excellent gate charge x R DS(on) product (FOM) • Low parasitic inductance • Low profile (2|I D|R DS(on)max, I D=30 A 55 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.0 page 2 2009-05-11 BSB015N04NX3 G Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics 6) Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total Gate plateau voltage Gate charge total, sync. FET Output charge Reverse Diode Diode continuous forward current Diode pulse current Diode forward voltage IS I S,pulse V SD T C=25 °C V GS=0 V, I F=30 A, T j=25 °C V R=15 V, I F=I S, di F/dt =400 A/µs 0.81 89 400 V A Q gs Q g(th) Q gd Q sw Qg V plateau Q g(sync) Q oss V DS=0.1 V, V GS=0 to 10 V V DD=20 V, V GS=0 V V DD=20 V, I D=30 A, V GS=0 to 10 V 41 26 13 28 107 4.8 101 86 142 134 V nC nC C iss C oss Crss t d(on) tr t d(off) tf V DD=20 V, V GS=10 V, I D=30 A, R G=1.6 Ω V GS=0 V, V DS=20 V, f =1 MHz 9000 2300 91 23 6.4 36 7.6 12000 pF 3100 ns Values typ. max. Unit Reverse recovery charge 6) Q rr - - 50 nC See figure 16 for gate charge parameter definition Rev. 2.0 page 3 2009-05-11 BSB015N04NX3 G 1 Power dissipation P tot=f(T C) 2 Drain current I D=f(T C); V GS≥10 V 100 90 80 70 60 200 160 120 P tot [W] 50 40 30 20 10 0 0 40 80 120 160 I D [A] 80 40 0 0 40 80 120 160 T C [°C] T C [°C] 3 Safe operating area I D=f(V DS); T C=25 °C; D =0 parameter: t p 103 limited by on-state resistance 4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T 101 1 µs 10 µs 102 100 µs 100 0.5 DC Z thJC [K/W] 1 ms 0.2 I D [A] 101 10 ms 10-1 0.1 0.05 0.02 100 10-2 0.01 single pulse 10-1 10 -1 10-3 10 0 10 1 10 2 10-6 10-5 10-4 10-3 t p [s] 10-2 10-1 100 V DS [V] Rev. 2.0 page 4 2009-05-11 BSB015N04NX3 G 5 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS 800 10 V 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 °C parameter: V GS 6 720 640 560 480 6.5 V 5 7V 5V 4 400 320 6V R DS(on) [mΩ ] I D [A] 3 5.5 V 240 160 80 0 0 1 2 3 2 7V 6V 6.5 V 10 V 5.5 V 1 5V 0 0 10 20 30 40 50 V DS [V] I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 800 720 8 Typ. forward transconductance g fs=f(I D); T j=25 °C 280 240 640 560 480 400 320 240 160 80 25 °C 150 °C 200 g fs [S] 2 3 4 5 6 7 8 I D [A] 160 120 80 40 0 0 0 40 80 120 160 V GS [V] I D [A] Rev. 2.0 page 5 2009-05-11 BSB015N04NX3 G 9 Drain-source on-state resistance R DS(on)=f(T j); I D=30 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS; I D=250 µA 2.4 4 2 3.2 98 % 1.6 R DS(on) [mΩ ] 1.2 V GS(th) [V] 100 140 180 typ 2.4 1.6 0.8 0.4 0.8 0 -60 -20 20 60 0 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 105 1000 25 °C 150 °C, 98% 104 Ciss Coss 100 150 °C C [pF] 103 I F [A] 25 °C, 98% Crss 10 10 2 101 0 5 10 15 20 25 30 1 0.0 0.5 1.0 1.5 2.0 V DS [V] V SD [V] Rev. 2.0 page 6 2009-05-11 BSB015N04NX3 G 13 Avalanche characteristics I AS=f(t AV); R GS=25 Ω parameter: T j(start) 100 14 Typ. gate charge V GS=f(Q gate); I D=30 A pulsed parameter: V DD 12 20 V 10 25 °C 100 °C 125 °C 8V 32 V 8 10 V GS [V] 1 10 100 1000 I AV [A] 6 4 2 1 0 0 40 80 120 t AV [µs] Q gate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=1 mA 16 Gate charge waveforms 45 V GS Qg 40 V BR(DSS) [V] 35 30 V g s(th) 25 Q g(th) Q gs -60 -20 20 60 100 140 180 Q sw Q gd Q g ate 20 T j [°C] Rev. 2.0 page 7 2009-05-11 BSB015N04NX3 G Rev. 2.0 page 8 2009-05-11 BSB015N04NX3 G Package Outline PG-TDSON-8: Tape MG-WDSON-2 Dimensions in mm Rev. 2.0 page 9 2009-05-11 BSB015N04NX3 G Dimensions in mm Recommended stencil thickness 150 µm Rev. 2.0 page 10 2009-05-11 BSB015N04NX3 G Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.0 page 11 2009-05-11