BSB028N06NN3G

n-Channel Power MOSFET OptiMOS™ BSB028N06NN3 G Data Sheet 1.3, 2011-03-01 Preliminary Industrial & Multimarket OptiMOS™ Power-MOSFET BSB028N06NN3 G 1 Description OptiMOS™60V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together with lowest on state resistance in small footprint packages make OptiMOS™ 60V the best choice for the demanding requirements of switched mode power supplies in Servers, Datacom and Telecom applications but also for motor drives. With almost no parasitic package inductances, the CanPAK allows best controllability of the gate in highly dynamic switching enviroments. This package in addition features best cooling capability through top-side cooling of the metal can. Hence, this packaging technology combined with the OptiMOS silicon enables highest efficiency levels while having mininal space requirements at the same time. Features • • • • • • • • • • • • Optimized technology for DC/DC converters 100% avalanche tested Excellent Qg x RDS(on) product (FOM) Qualified according to JEDEC1) for target applications Superior thermal resistance Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21 Double sided cooling Compatible with DirectFET® package MN footprint and outline2) N-channel, normal level Low parasitic inductance Low profile (2|ID|RDS(on)max, ID=30 A µA V Unit Note / Test Condition VGS=0 V, ID=1 mA VDS=VGS, ID=102 µA VDS=60V, VGS=0 V, Tj=25 °C VDS=60 V, VGS=0 V, Tj=125 °C VGS=20 V, VDS=0 V VGS=10 V, ID=30A VGS(th) IDSS IGSS RG gfs 42 Drain-source on-state resistance RDS(on) Table 5 Parameter Dynamic characteristics Symbol Min. Values Typ. 8800 2100 64 21 9 38 6 Max. 12000 2800 ns pF Unit Note / Test Condition Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Ciss Coss Crss VGS=0 V, VDS=30 V, f=1 MHz VDD=30V, VGS=10 V, ID=30 A, RG= 1.6 Ω td(on) tr td(off) tf Preliminary Data Sheet 3 1.3, 2011-03-01 OptiMOS™ Power-MOSFET BSB028N06NN3 G Electrical characteristics Table 6 Parameter Gate charge characteristics1) Symbol Min. Values Typ. 41 8 23 108 4.6 87 143 116 V nC Max. nC Unit Note / Test Condition Gate to source charge Gate to drain charge Switching charge Gate charge total Output charge Qgs Qgd Qsw VDD=30 V, ID=30 A, VGS=0 to 10 V Qg Vplateau Qoss VDD=30 V, VGS=0 V 1) See figure 16 for gate charge parameter definition Table 7 Parameter Reverse diode characteristics Symbol Min. Is IS,pulse Values Typ. Max. 30 120 0.8 87 60 1.2 V nC ns A Unit Note / Test Condition Diode continuous forward current Diode pulse current Diode forward voltage Reverse recovery charge Reverse recovery time TC=25 °C VGS=0 V, IF=30 A, Tj=25 °C VR=30V, IF=Is, diF/dt=100 A/µs VSD Qrr trr Preliminary Data Sheet 4 1.3, 2011-03-01 OptiMOS™ Power-MOSFET BSB028N06NN3 G Electrical characteristics diagrams 5 Electrical characteristics diagrams Table 8 1 Power dissipation 2 Drain current Ptot = f(TC) Table 9 3 Safe operating area TC=25 °C ID=f(TC); parameter:VGS 4 Max. transient thermal impedance ID=f(VDS); Tj=25 °C; D=0; parameter: Tp Z(thJC)=f(tp); parameter: D=tp/T Preliminary Data Sheet 5 1.3, 2011-03-01 OptiMOS™ Power-MOSFET BSB028N06NN3 G Electrical characteristics diagrams Table 10 5 Typ. output characteristics TC=25 °C 6 Typ. drain-source on-state resistance ID=f(VDS); Tj=25 °C; parameter: VGS Table 11 7 Typ. transfer characteristics RDS(on)=f(ID); Tj=25 °C; parameter: VGS 8 Typ. forward transconductance ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C Preliminary Data Sheet 6 1.3, 2011-03-01 OptiMOS™ Power-MOSFET BSB028N06NN3 G Electrical characteristics diagrams Table 12 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on)=f(Tj); ID=30 A; VGS=10 V Table 13 11 Typ. capacitances VGS(th)=f(Tj); VGS=VDS; 12 Forward characteristics of reverse diode C=f(VDS); VGS=0 V; f=1 MHz IF=f(VSD); parameter: Tj Preliminary Data Sheet 7 1.3, 2011-03-01 OptiMOS™ Power-MOSFET BSB028N06NN3 G Electrical characteristics diagrams Table 14 13 Avalanche characteristics 14 Typ. gate charge IAS=f(tAV); RGS=25 Ω; parameter: Tj(start) Table 15 15 Drain-source breakdown voltage VGS=f(Qgate); ID=30 A pulsed; parameter: VDD 16 Gate charge waveforms VBR(DSS)=f(Tj); ID=1 mA Preliminary Data Sheet 8 1.3, 2011-03-01 OptiMOS™ Power-MOSFET BSB028N06NN3 G Package outlines 6 Package outlines Figure 1 Outlines MG-WDSON-2, dimensions in mm/inches 9 1.3, 2011-03-01 Preliminary Data Sheet OptiMOS™ Power-MOSFET BSB028N06NN3 G Package outlines 7 Package outlines Figure 2 Outlines MG-WDSON-2, dimensions in mm/inches Preliminary Data Sheet 10 1.3, 2011-03-01 OptiMOS™ Power-MOSFET BSB028N06NN3 G Package outlines 8 Package outlines Figure 3 Dimensions in mm/ Recomended stencil thikness 150µm Preliminary Data Sheet 11 1.3, 2011-03-01 OptiMOS™ Power-MOSFET BSB028N06NN3 G Revision History 9 Revision History Revision History: 2011-03-01, 1.3 Previous Revision: Revision 0.1 1.0 Subjects (major changes since last revision) Release of target data sheet Release of Preliminary data sheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Edition 2011-03-01 Published by Infineon Technologies AG 81726 Munich, Germany © 2011 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Preliminary Data Sheet 12 1.3, 2011-03-01