BSC019N02KSG

BSC019N02KS G OptiMOS™2 Power-Transistor Features • For fast switching converters and sync. rectification • Qualified according to JEDEC1) for target applications • Super Logic level 2.5V rated; N-channel • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • Avalanche rated • Pb-free plating; RoHS compliant • Halogen-free according to IEC61249-2-21 Product Summary V DS R DS(on),max ID 20 1.95 100 PG-TDSON-8 V mΩ A Type BSC019N02KS G Package PG-TDSON-8 Marking 019N02KS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=4.5 V, T C=25 °C V GS=4.5 V, T C=100 °C V GS=2.5 V, T C=25 °C V GS=2.5 V, T C=100 °C V GS=4.5 V, T A=25 °C, R thJA=45 K/W2) Value 100 100 100 95 Unit A 30 200 800 6 ±12 mJ kV/µs V Pulsed drain current Avalanche energy, single pulse Reverse diode d v /dt Gate source voltage 1) I D,pulse E AS dv /dt V GS T C=25 °C3) I D=50 A, R GS=25 Ω I D=50 A, V DS=16 V, di /dt =200 A/µs, T j,max=150 °C J-STD20 and JESD22 Rev. 1.41 page 1 2010-07-01 BSC019N02KS G Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Power dissipation Symbol Conditions P tot T C=25 °C T A=25 °C, R thJA=45 K/W 2) Operating and storage temperature IEC climatic category; DIN IEC 68-1 T j, T stg Value 104 2.8 -55 ... 150 55/150/56 °C Unit W Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics Thermal resistance, junction - case R thJC bottom top SMD version, device on PCB R thJA minimal footprint 6 cm2 cooling area2) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=350 µA V DS=20 V, V GS=0 V, T j=25 °C V DS=20 V, V GS=0 V, T j=125 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=12 V, V DS=0 V V GS=2.5 V, I D=50 A V GS=4.5 V, I D=50 A Gate resistance Transconductance 2) - - 1.2 18 K/W - - 62 45 20 0.7 - 0.95 - 1.2 1 V µA - 2.3 1.6 1.9 210 100 100 3.0 1.95 Ω S nA mΩ RG g fs |V DS|>2|I D|R DS(on)max, I D=50 A 100 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. See figure 3 3) Rev. 1.41 page 2 2010-07-01 BSC019N02KS G Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics 4) Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total Gate plateau voltage Gate charge total, sync. FET Output charge Reverse Diode Diode continuous forward current Diode pulse current Diode forward voltage IS I S,pulse V SD T C=25 °C V GS=0 V, I F=50 A, T j=25 °C V R=10 V, I F=50 A, di F/dt =100 A/µs 0.8 100 400 1.2 V A Q gs Q g(th) Q gd Q sw Qg V plateau Q g(sync) Q oss V DS=0.1 V, V GS=0 to 4.5 V V DD=10 V, V GS=0 V V DD=10 V, I D=50 A, V GS=0 to 4.5 V 19 9 11 21 64 2.0 59 37 25.1 12.1 16.9 29.8 85.0 78.5 V nC nC C iss C oss Crss t d(on) tr t d(off) tf V DD=10 V, V GS=4.5 V, I D=50 A, R G=1.6 Ω V GS=0 V, V DS=10 V, f =1 MHz 9600 2700 410 15 187 95 8 13000 pF 3600 620 ns Values typ. max. Unit Reverse recovery charge Q rr - 55.6 - nC 4) See figure 16 for gate charge parameter definition Rev. 1.41 page 3 2010-07-01 BSC019N02KS G 1 Power dissipation P tot=f(T C) 2 Drain current I D=f(T C); V GS≥4.5 V 120 120 100 100 80 80 P tot [W] 60 I D [A] 0 40 80 120 160 60 40 40 20 20 0 0 0 40 80 120 160 T C [°C] T C [°C] 3 Safe operating area I D=f(V DS); T C=25 °C; D =0 parameter: t p 103 limited by on-state resistance 10 µs 100 µs 4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T 101 102 1 ms 100 0.5 0.2 Z thJC [K/W] I D [A] 101 10 ms 0.1 10-1 0.05 0.02 0.01 DC 100 10-2 single pulse 10-1 10 -1 10-3 10 0 10 1 10 2 10-6 10-5 10-4 10-3 10-2 10-1 100 V DS [V] t p [s] Rev. 1.41 page 4 2010-07-01 BSC019N02KS G 5 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS 200 4V 3V 2.5 V 2.4 V 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 °C parameter: V GS 9 8 7 6 175 150 R DS(on) [mW] 125 1.8 V I D [A] 2.2 V 5 4 3 2V 2.2 V 2.5 V 100 75 2V 50 2 4.5 V 1.8 V 1.6 V 3V 25 1 0 2 3 0 10 20 30 40 3.5 V 0 0 1 50 V DS [V] I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 100 8 Typ. forward transconductance g fs=f(I D); T j=25 °C 350 300 75 250 50 g fs [S] 25 °C 150 °C I D [A] 200 150 25 100 50 0 0 1 2 3 0 0 25 50 75 100 V GS [V] I D [A] Rev. 1.41 page 5 2010-07-01 BSC019N02KS G 9 Drain-source on-state resistance R DS(on)=f(T j); I D=50 A; V GS=4.5 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS 4 1.6 3 1.2 R DS(on) [mΩ ] V GS(th) [V] 3500 µA 2 98 % typ 0.8 350 µA 1 0.4 0 -60 -20 20 60 100 140 0 -60 -20 20 60 100 140 T j [°C] T j [°C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 105 103 102 104 Ciss C [pF] 150 °C 25 °C Coss I F [A] 101 150 °C, 98% 103 25 °C, 98% Crss 100 102 0 5 10 15 20 10-1 0 0.5 1 1.5 2 V DS [V] V SD [V] Rev. 1.41 page 6 2010-07-01 BSC019N02KS G 13 Avalanche characteristics I AS=f(t AV); R GS=25 Ω parameter: T j(start) 103 14 Typ. gate charge V GS=f(Q gate); I D=50 A pulsed parameter: V DD 5 4 25 °C 10 V 16 V 102 3 I AV [A] 100 °C 4V V GS [V] 2 1 0 103 0 125 °C 101 100 100 101 t AV [µs] 102 20 40 60 80 Q gate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=1 mA 16 Gate charge waveforms 24 V GS Qg 22 V BR(DSS) [V] 20 V g s(th) 18 Q g(th) Q gs -60 -20 20 60 100 140 Q sw Q gd Q g ate 16 T j [°C] Rev. 1.41 page 7 2010-07-01 BSC019N02KS G Package Outline PG-TDSON-8: Outline PG-TDSON-8 Footprint Dimensions in mm Rev. 1.41 page 8 2010-07-01 BSC019N02KS G Package Outline PG-TDSON-8: Tape Dimensions in mm Rev. 1.41 page 9 2010-07-01 BSC019N02KS G Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( www.infineon.com ). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.41 page 10 2010-07-01