BSC200P03LSG

BSC200P03LS G OptiMOS™-P Power-Transistor Features • P-Channel • Enhancement mode • Logic level • 150°C operating temperature • Avalanche rated; RoHS compliant • Vgs=25V, specially suited for notebook applications • Halogen-free according to IEC-61249-2-21 Product Summary V DS R DS(on),max ID -30 20 -12.5 V mΩ A PG-TDSON-8 Type BSC200P03LS G Package PG-TDSON-8 Marking 200P03LS Lead free Yes Packing Dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=70 °C T A=25 °C1) Pulsed drain current Avalanche energy, single pulse Gate source voltage Power dissipation I D,pulse E AS V GS P tot T C=25 °C T A=25 °C1) Operating and storage temperature ESD class Soldering temperature IEC climatic category; DIN IEC 68-1 T j, T stg JESD22-A114-HBM T C=25 °C2) I D=-12.5 A, R GS=25 Ω Value -12.5 -12.5 -9.9 -50 98 ±25 63 2.5 -55 ... 150 1B (500V-1kV) 260 °C 55/150/56 °C mJ V W Unit A Rev. 1.04 page 1 2009-02-18 BSC200P03LS G Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R thJC R thJA 6 cm2 cooling area1) Values typ. max. Unit - - 2 50 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D=-250µA V GS(th) V DS=V GS, I D=-100 µA V DS=-30 V, V GS=0 V, T j=25 °C V DS=-30 V, V GS=0 V, T j=125 °C Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance I GSS R DS(on) RG g fs |V DS|>2|I D|R DS(on)max, I D=-12.5 A V GS=-25 V, V DS=0 V V GS=-10 V, I D=-12.5 A -30 -2.2 -1.5 -1 V Zero gate voltage drain current I DSS - -0.1 -1 µA 12 -10 -10 17.1 3.9 23 -100 -100 20 nA mΩ Ω S 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) 1) See Figure 3. Rev. 1.04 page 2 2009-02-18 BSC200P03LS G Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics 3) Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage IS I S,pulse V SD T C=25 °C V GS=0 V, I F=-12.5 A, T j=25 °C V R=15 V, I F=|I S|, di F/dt =100 A/µs -0.9 -12.5 -50 -1.2 V A Q gs Q g(th) Q gd Q sw Qg V plateau Q oss V DD=-15 V, V GS=0 V V DD=-24 V, I D=-12.5 A, V GS=0 to 10 V -4.8 -2.6 -13.6 -15.8 -36.4 -2.6 10.2 -6.5 -3.5 -20.4 -23.3 -48.5 13.5 V nC C iss C oss C rss t d(on) tr t d(off) tf V DD=-15 V, V GS=10 V, I D=-10 A, R G=6 Ω V GS=0 V, V DS=-15 V, f =1 MHz 1830 569 460 9 33 34 18 2430 757 690 14 49 51 27 ns pF Values typ. max. Unit Reverse recovery time t rr - 22 - ns Reverse recovery charge Q rr - 11 - nC Rev. 1.04 page 3 2009-02-18 BSC200P03LS G 1 Power dissipation P tot=f(T C); t p≤10 s 2 Drain current I D=f(T C); |V GS|≥10 V; t p≤10 s 70 15 60 50 10 P tot [W] 30 -I D [A] 5 0 0 40 80 120 160 0 40 80 120 160 40 20 10 0 T C [°C] T C [°C] 3 Safe operating area I D=f(V DS); T C=25 °C1); D =0 parameter: t p 102 4 Max. transient thermal impedance Z thJS=f(t p) parameter: D =t p/T 101 10 µs 100 µs 0.5 -I D [A] 100 Z thJS [K/W] 0.2 0.1 0.05 101 1 ms 10 ms 10-1 single pulse limited by on-state resistance DC 100 10 -1 10-2 10 0 10 1 10 2 10-5 10-4 10-3 10-2 10-1 100 -V DS [V] t p [s] Rev. 1.04 page 4 2009-02-18 BSC200P03LS G 5 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS 40 -10 V -4.5 V 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 °C parameter: V GS 70 -2.7 V -3 V -3.2 V -3.5 V 65 35 60 30 -3.5 V 55 50 R DS(on) [mΩ ] 25 45 40 35 30 -4.5 V -I D [A] 20 -3.2 V 15 -3 V 10 -2.7 V 25 20 -10 V 5 15 -2.3 V 0 0 1 2 3 10 0 10 20 30 40 -V DS [V] -I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 50 8 Typ. forward transconductance g fs=f(I D); T j=25 °C 40 25 °C 40 150 °C 30 30 -I D [A] g fs [S] 20 10 0 0 1 2 3 4 20 10 0 0 10 20 30 -V GS [V] -I D [A] Rev. 1.04 page 5 2009-02-18 BSC200P03LS G 9 Drain-source on-state resistance R DS(on)=f(T j); I D=-12.5 A; V GS=-10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS; I D=-100 µA 3 28 2.5 max max. 24 20 2 R DS(on) [mΩ ] 16 -V GS(th) [V] typ 1.5 12 1 8 0.5 min. 4 0 -60 -20 20 60 100 140 180 0 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 104 10000 100 10 Ciss 25 °C, typ C [pF] 103 1000 I F [A] Coss 150°C, typ 1 Crss 150 °C, 98% 25°C, 98% 102 100 0.1 5 10 15 20 25 30 0 0.5 1 1.5 0 -V DS [V] -V SD [V] Rev. 1.04 page 6 2009-02-18 BSC200P03LS G 13 Avalanche characteristics I AS=f(t AV); R GS=25 Ω parameter: T j(start) 102 14 Typ. gate charge V GS=f(Q gate); I D=-12.5 A pulsed parameter: V DD 10 -15 V 9 -6 V 8 7 6 101 100 °C 125 °C 25 °C -24 V -V GS [V] 103 -I AV [A] 5 4 3 2 1 100 100 101 102 0 0 10 20 30 40 t AV [µs] -Q gate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=-250 µA 16 Gate charge waveforms 36 V GS 34 Qg 32 30 -V BR(DSS) [V] 28 26 V g s(th) 24 22 Q g(th) Q gs -60 -20 20 60 100 140 180 Q sw Q gd Q g ate 20 T j [°C] Rev. 1.04 page 7 2009-02-18 BSC200P03LS G Package Outline PG-TDSON-8: Outline Rev. 1.04 page 8 2009-02-18 BSC200P03LS G Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.04 page 9 2009-02-18