BSC360N15NS3G

BSC360N15NS3 G "%&$!"#™3 Power-Transistor Features Q ' 3 81>>5< >? B 1 1E5 Q ) 2 655 < 14 @ < D 7 + ? " , 3 ? = @ D B5 19 > 9 Q * E1 ? )# Product Summary V 9H R 9H"[Z#$YMd I9 )-( +. ++ J Y" 6 6 B 1B 5D @ @ ? D7 1 9 9 ? Q #4513 I C 9 89 7 1>4 C >3 8B >? EC B 3 D91D > ? 87 B GD > 3 I ? 5 93 9 6? Q " 1< 75> 655 13 3 ? B 9 7 D #        ? B 4> ? Type  ,    '  ' , ! Package Marking E=%I9HDC%0 +.(C)-CH Maximum ratings, 1D V   T  E>< C ? D 5B 95 C 53 954 T 5 C 8 GC @ 6 9 Parameter  ? >D E? EC 4B 9 3 EB5>D 9 > 1> B Symbol Conditions I9 T 8   T T 8   T ) E< 54 4B 9 3 EB5>D C 1 > B *#  F < >3 85 5>5B I C>7< @ E< 5 11 7 95 C !1D C EB5 F 4C9 9 ? ( @ 5B D 7 1>4 C ? B 75 D = @ 5B D B 19 > D1 5 1 E5 #  3 < C ? D 5B 95 C 53 954 T 5 C 8 GC @ 6 9 Static characteristics  B 9 C EB5 2 B 1;4? G> F ? 3 5 ?D !1D D B C ? < F B V "7G#9HH V =H  .  I 9 =  V =H"`T# I 9HH V 9H4V =H I 9   V  V 9H   .  V =H  .  T V   T V 9H   .  V =H  .  T V   T !1D C EB5 < 1;175 3 EB5>D 5? 3 5 B  B 9 C EB5 ? > C 1D B CC 1>3 5 1> ? 3 D 5 5 9D I =HH R 9H"[Z# V =H   .  V 9H  . V =H  .  I 9    V =H  .  I 9   !1D B CC 1>3 5 5 5 9D I^MZ_O[ZPaO`MZOQ R= g R_ gV 9Hg5*gI 9gR 9H"[Z#YMd I 9    )-( * % % + (&) % , ) r6 J % % % % % )- )( ) +) +) )&/ *1 )(( )(( +. +0 % % " H Z6 Y" )# *# +# $ , -    1>4 $  ,    , 55 67EB  95 +  G9  3 =*  ? >5 < I5B   V = D 9; 3 ? @ @ 5B B 1 6 B B 9 D 8 1 83 1 5 ? 4 1>  5F3 5 ? >   = = H   = = H  = = 5@ ? HI )   9 3 ? >>53 D > )   9 F B3 1 D< B < + 5F  @ 175        BSC360N15NS3 G Parameter Symbol Conditions min. Values typ. max. Unit Dynamic characteristics #>@ ED 1@ 13 9 >3 5 3 D 1 ( ED ED 1@ 13 9 >3 5 @3 D 1 + 5F B5 D1>C 5B 1@ 13 9 >3 5 5C B 6 3 D 1 - EB ? > 45< I D 5 > 19 = + 95 D 5 C9 = - EB ? 6 45< I D 5 >619 = 1< D 5 7 , G9 89 7 3 81B 5 D> 3 7 !1D 3 81B 5 D D < 5 7 ?1 !1D @ < D 1E F D ? EC 6 B 1B 3 EB5>D ? 9 > ?G 4 B  9 45 @ E< 5 3 EB5>D ? C B  9 45 6 B 1B F