BSD223P

BSD 223P OptiMOS-P Small-Signal-Transistor Feature • Dual P-Channel • Enhancement mode • Super Logic Level (2.5 V rated) • 150°C operating temperature • Avalanche rated • dv/dt rated Product Summary VDS RDS(on) ID -20 1.2 -0.39 PG-SOT-363 4 V Ω A 5 6 2 3 1 VPS05604 MOSFET1: 1,2,6 MOSFET2: 3,4,5 Drain pin 6,3 Type BSD 223P Package PG-SOT-363 Tape & Reel Marking Gate pin 2,5 Source pin 1,4 L6327: 3000pcs/r X1s Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TA=25°C TA=70°C Symbol ID Value -0.39 -0.31 Unit A Pulsed drain current TA=25°C ID puls EAS dv/dt VGS Ptot Tj , Tstg -1.56 1.4 -6 ±12 0.25 -55... +150 55/150/56 mJ kV/µs V W °C Avalanche energy, single pulse ID =-0.39 A , VDD =-10V, RGS =25Ω Reverse diode dv/dt IS =-0.39A, VDS =-16V, di/dt=200A/µs, Tjmax =150°C Gate source voltage Power dissipation TA=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Rev.1.3 Page 1 2006-12-04 BSD 223P Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point Thermal resistance, junction - ambient, leaded RthJS RthJA 180 500 K/W Symbol min. Values typ. max. Unit Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS =0, ID=-250µA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) -20 -0.6 Values typ. -0.9 max. -1.2 Unit V Gate threshold voltage, VGS = VDS ID =-1.5µA Zero gate voltage drain current VDS =-20V, VGS =0, Tj =25°C VDS =-20V, VGS =0, Tj =150°C µA -0.1 -10 -10 1.27 0.7 -1 -100 -100 2.1 1.2 nA Ω Gate-source leakage current VGS =-12V, VDS =0 Drain-source on-state resistance VGS =-2.5V, ID =-0.29A Drain-source on-state resistance VGS =-4.5, ID =-0.39A Rev.1.3 Page 2 2006-12-04 BSD 223P Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time gfs Ciss Coss Crss td(on) tr td(off) tf VDD =-10V, VGS =-4.5V, ID =-0.39A, RG=6Ω çVDS ç≥2*çIDç*RDS(on)max ID =-0.31A VGS =0, VDS =-15V, f=1MHz Symbol Conditions min. 0.35 - Values typ. 0.7 45 21 17 3.8 5 5.1 3.2 max. 56 26 22 5.7 7.5 7.6 4.8 Unit S pF ns Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr VGS =0, IF=-0.39 VR =-10V, |IF | = |lD |, diF /dt=100A/µs Qgs Qgd Qg VDD =-10V, ID =-0.39A - -0.04 -0.4 -0.5 -2.2 -0.05 nC -0.5 -0.62 -2.7 V VDD =-10V, ID =-0.39A, VGS =0 to -4.5V V(plateau) VDD =-10V, ID =-0.39A IS TA=25°C - -1 7.6 1.1 -0.39 A -1.56 -1.33 V 9.5 1.4 ns nC Rev.1.3 Page 3 2006-12-04 BSD 223P 1 Power dissipation Ptot = f (TA ) BSD 223P 2 Drain current ID = f (TA ) parameter: |VGS |≥ 4.5 V -0.42 BSD 223P 0.28 W 0.24 0.22 0.2 A -0.36 -0.32 -0.28 Ptot ID -0.24 -0.2 -0.16 -0.12 -0.08 -0.04 0 0 20 40 60 80 100 120 0.18 0.16 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0 0 °C 160 20 40 60 80 100 120 °C 160 TA TA 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TA = 25 °C -10 1 BSD 223P 4 Transient thermal impedance ZthJA = f (tp ) parameter : D = tp /T 10 3 BSD 223P K/W A tp = 390.0 µs 10 2 /I D ID = V DS -10 0 Z thJA 10 1 1 ms R DS ( on ) 10 0 D = 0.50 0.20 -10 -1 10 ms 10 -1 0.10 0.05 0.02 10 -2 single pulse -10 -2 0.01 -10 -1 -10 0 DC 1 -10 V -10 2 10 -3 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS Rev.1.3 Page 4 tp 2006-12-04 BSD 223P 5 Typ. output characteristic ID = f (VDS ) parameter: Tj =25°C 0.7 6 Typ. drain-source on resistance RDS(on) = f (ID ) parameter: VGS 4 2.5V RDS(on) 3V 4V A 4.5V 6V 7V 8V 0.5 10V Ω 3 2.5 0.4 2 0.3 2.2V 2.2V 2.5V 3V 4V 4.5V 6V 7V 8V 10V -I D 1.5 0.2 1 0.1 0.5 0 0 0.3 0.6 0.9 V 1.5 0 0 0.1 0.2 0.3 0.4 0.5 A 0.7 -VDS -ID 7 Typ. transfer characteristics ID= f ( VGS ); |VDS |≥ 2 x |ID| x RDS(on)max parameter: Tj = 25 °C 0.7 8 Typ. forward transconductance gfs = f(ID) parameter: Tj = 25 °C 1.1 S A 0.9 0.5 0.8 -I D g fs 0.4 0.3 0.2 0.1 0 0 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.5 1 1.5 2 V 3 0 0 0.1 0.2 0.3 0.4 0.5 A 0.7 -VGS Rev.1.3 Page 5 -ID 2006-12-04 BSD 223P 9 Drain-source on-resistance RDS(on) = f(Tj ) parameter: ID = -0.39 A, VGS = -4.5 V 1.6 10 Typ. gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS 1.6 Ω 98% V RDS(on) 1.2 - VGS(th) 1.2 98% 1 typ. 1 typ. 0.8 0.8 0.6 0.6 2% 0.4 0.4 0.2 0.2 0 -60 -20 20 60 100 °C 160 0 -60 -20 20 60 100 °C 160 Tj Tj 11 Typ. capacitances C = f (VDS) parameter: VGS =0, f=1 MHz 10 2 12 Forward character. of reverse diode IF = f (VSD ) parameter: Tj -10 1 BSD 223P A Ciss -10 0 C pF Coss -10 -1 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 1 0 -10 -2 0 Crss 2 4 6 8 10 12 V IF 15 -0.4 -0.8 -1.2 -1.6 -2 -2.4 V -3 -VDS Rev.1.3 Page 6 VSD 2006-12-04 BSD 223P 13 Typ. avalanche energy EAS = f (Tj ), par.: ID = -0.39 A VDD = -10 V, RGS = 25 Ω 1.4 14 Typ. gate charge VGS = f (QGate ) parameter: ID = -0.39 A pulsed; Tj = 25 °C -16 V BSD 223P mJ -12 1 VGS 0.8 EAS -10 -8 0.6 -6 0.4 -4 0.2 20% 50% 80% -2 0 20 40 60 80 100 120 °C 160 0 0 0.2 0.4 0.6 0.8 1 nC 1.3 Tj |QGate | 15 Drain-source breakdown voltage V(BR)DSS = f (Tj ) -24.5 BSD 223P V -23.5 V (BR)DSS -23 -22.5 -22 -21.5 -21 -20.5 -20 -19.5 -19 -18.5 -18 -60 -20 20 60 100 °C 180 Tj Rev.1.3 Page 7 2006-12-04 BSD 223P Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.1.3 Page 8 2006-12-04