BSD235C

BSD235C OptiMOS™ 2 + OptiMOS™-P 2 Small Signal Transistor Features · Complementary P + N channel · Enhancement mode · Super Logic level (2.5V rated) · Avalanche rated · Qualified according to AEC Q101 · 100% lead-free; RoHS compliant 6 Product Summary P N 20 350 600 0.95 A V mΩ V DS R DS(on),max V GS=±4.5 V V GS=±2.5 V ID -20 1200 2100 -0.53 PG-SOT-363 3 6 5 4 2 5 1 4 2 3 1 Type BSD235C Package PG-SOT-363 Tape and Reel Information L6327: 3000 pcs / reel 1) Marking X9s Lead Free Yes Packing Non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions P Value N 0.95 0.76 3.8 1.6 ±12 Unit Continuous drain current ID T A=25 °C T A=70 °C -0.53 -0.46 -2.1 1.4 A Pulsed drain current Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature ESD class Soldering temperature IEC climatic category; DIN IEC 68-1 1) I D,pulse E AS V GS P tot T j, T stg T A=25 °C P: I D=-0.53 A, N: I D=0.95 A, R GS=25 Ω mJ V W °C °C °C T A=25 °C 0.5 -55 ... 150 JESD22-A114-HBM T solder 0 (2|I D|R DS(on)max, I D=-0.46 A |V DS|>2|I D|R DS(on)max, I D=0.76 A Drain-source breakdown voltage 20 -1.2 0.7 - -0.9 0.95 - -20 -0.6 1.2 -1 V µA N P N Gate-source leakage current P N - - 1 -100 100 ±100 nA Drain-source on-state resistance P R DS(on) N P N - 1221 415 745 266 0.7 2100 600 1200 350 - mΩ Transconductance P g fs S N 2) - 2 - Performed on 40mm2 FR4 PCB. The traces are 1mm wide, 70µm thick and 20mm long; they are present on both sides of the PCB Rev.2.1 page 2 2009-02-11 BSD235C Parameter Symbol Conditions min. Dynamic characteristics Input capacitance P C iss N Output capacitance P C oss N Reverse transfer capacitance P Crss N Turn-on delay time P t d(on) N Rise time P tr N Turn-off delay time P t d(off) N Fall time P tf N Gate Charge Characteristics Gate to source charge Gate to drain charge Switching charge Gate plateau voltage Gate to source charge Gate to drain charge Switching charge Gate plateau voltage P Q gs Q gd Qg V plateau N Q gs Q gd Qg V plateau V DD=16 V, I D=0.95 A, V GS=0 to 4.5 V V DD=-10 V, I D=-0.53 A, V GS=0 to -4.5 V -0.09 -0.2 -0.4 -2.4 0.11 0.09 0.34 2.4 nC P: V DD=-10 V, V GS=-4.5 V, R G=6 Ω, I D=-0.53 A N: V DD=10 V, V GS=4.5 V, R G=6 Ω, I D=0.95 A V GS=0 V, P: V DS=-10 V, N: V DS= 10 V, f =1 MHz 37 47 17 24 14 3 3.8 3.8 5.0 3.6 5.1 4.5 3.2 1.2 ns pF Values typ. max. Unit Rev.2.1 page 3 2009-02-11 BSD235C Parameter Symbol Conditions min. Reverse Diode Diode continuous forward current P IS N Diode pulse current P I S,pulse N Diode forward voltage P V SD V GS=0 V, I F=-0.53 A, T j=25 °C V GS=0 V, I F=0.95 A, T j=25 °C T C=25 °C -0.42 0.5 -1 -2.1 3.8 -1.2 V A Values typ. max. Unit N Reverse recovery time P t rr N Reverse recovery charge P Q rr N - 0.9 7.6 5.2 1.1 0.97 1.1 nC ns V R=±10 V, I F=I S, di F/dt =100 A/µs - Rev.2.1 page 4 2009-02-11 BSD235C 1 Power dissipation (P) P tot=f(T A) 2 Power dissipation (N) P tot=f(T A) 0.6 0.6 0.5 0.5 0.4 0.4 P tot [W] P tot [W] 0.3 0.3 0.2 0.2 0.1 0.1 0 0 40 80 120 160 0 0 40 80 120 160 T A [°C] T A [°C] 3 Drain current (P) I D=f(T A) parameter: V GS≤-4.5 V 1 4 Drain current (N) I D=f(T A) parameter: V GS≥4.5 V 1 0.8 0.8 0.6 0.6 -I D [A] 0.4 I D [A] 0.4 0.2 0.2 0 0 40 80 120 160 0 0 40 80 120 160 T A [°C] T A [°C] Rev.2.1 page 5 2009-02-11 BSD235C 5 Safe operating area (P) I D=f(V DS); T A=25 °C; D =0 parameter: t p 101 6 Safe operating area (N) I D=f(V DS); T A=25 °C; D =0 parameter: t p 101 1 µs 1 µs 10 µs 10 µs 100 100 µs 100 100 µs -I D [A] 1 ms I D [A] 1 ms 10 ms 10 ms 10-1 10-1 DC 10-2 10 -1 10-2 10 0 10 1 -V DS [V] DC 10 2 10-1 100 101 102 V DS [V] 7 Max. transient thermal impedance (P) Z thJA=f(t p) parameter: D =t p/T 103 8 Max. transient thermal impedance (N) Z thJA=f(t p) parameter: D =t p/T 103 102 0.5 0.5 102 Z thJA [K/W] 0.2 0.1 0.05 0.02 0.01 Z thJA [K/W] 0.2 0.1 0.05 0.02 101 single pulse 101 0.01 single pulse 100 10 -5 100 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10-5 10-4 10-3 10-2 10-1 100 101 102 t p [s] t p [s] Rev.2.1 page 6 2009-02-11 BSD235C 9 Typ. output characteristics (P) I D=f(V DS); T j=25 °C parameter: V GS 5 10 Typ. output characteristics (N) I D=f(V DS); T j=25 °C parameter: V GS 5 4.5 V 4 10 V 4.5 V 4 10 V 3 3 3.5 V 3V I D [A] 3.5 V 2 3V I D [A] 2 2.5 V 1 2.5 V 2.3 V 2V 1 2.3 V 0 0 1 2 3 1.8 V 0 4 5 0 1 2 2V 1.8 V 3 4 5 V DS [V] V DS [V] 11 Typ. drain-source on resistance (P) R DS(on)=f(I D); T j=25 °C parameter: V GS 2000 1800 1600 1400 12 Typ. drain-source on resistance (N) R DS(on)=f(I D); T j=25 °C parameter: V GS 700 2.2 V 3.3 V 2.5 V 3V 3.5 V 600 2.2 V 500 2.5 V 3V 3.3 V R DS(on) [mΩ] R DS(on) [mΩ] 1200 1000 800 600 400 4.5 V 400 3.5 V 300 4.5 V 10 V 10 V 200 100 200 0 0 1 2 3 4 0 0 1 2 3 4 I D [A] I D [A] Rev.2.1 page 7 2009-02-11 BSD235C 13 Typ. transfer characteristics (P) I D=f(V GS); |V DS |>2 | ID| RDS(on)max parameter: T j 1 14 Typ. transfer characteristics (N) I D=f(V GS); |V DS |>2 | I D | R DS(on)max parameter: T j 1 0.75 0.75 -I D [A] 0.5 150 °C 25 °C I D [A] 0.5 0.25 0.25 150 °C 25 °C 0 0 1 2 3 0 0 1 2 3 -V GS [V] V GS [V] 15 Drain-source on-state resistance (P) R DS(on)=f(T j); I D=-0.53 A; V GS=-4.5 V 16 Drain-source on-state resistance (N) R DS(on)=f(T j); I D=0.95 A; V GS=4.5 V 1800 1600 600 500 1400 1200 98% 400 98% R DS(on) [mΩ ] 1000 typ R DS(on) [mΩ ] typ 300 800 600 400 200 100 200 0 -60 -20 20 60 100 140 180 0 -60 -20 20 60 100 140 180 T j [°C] T j [°C] Rev.2.1 page 8 2009-02-11 BSD235C 21 Forward characteristics of reverse diode (P) I F=f(V SD) parameter: T j 101 22 Forward characteristics of reverse diode (N) I F=f(V SD) parameter: T j 101 100 100 25 °C -I F [A] I F [A] 150 °C 150°C,98% 10-1 25 °C 150 °C, 98% 10-1 25 °C, 98% 150 °C 25 °C, 98% 10-2 0 0.4 0.8 1.2 1.6 10-2 0 0.4 0.8 1.2 1.6 -V SD [V] V SD [V] 23 Avalanche characteristics (P) I AS=f(t AV); R GS=25 Ω parameter: T j(start) 100 24 Avalanche characteristics (N) I AS=f(t AV); R GS=25 Ω parameter: T j(start) 100 25 °C 100 °C 25 °C 100 °C 125 °C 125 °C -I AV [A] 10-1 I AV [A] 0 1 2 3 10-1 10-2 10 10 10 10 10-2 100 101 102 103 t AV [µs] t AV [µs] Rev.2.1 page 9 2009-02-11 BSD235C 17 Typ. gate threshold voltage (P) V GS(th)=f(T j); V GS=V DS; I D=-1.5 µA 18 Typ. gate threshold voltage (N) V GS(th)=f(T j); V GS=V DS; I D=1.6 µA 1.6 1.6 1.2 98% 1.2 98% -V GS(th) [V] 0.8 typ V GS(th) [V] typ 0.8 2% 2% 0.4 0.4 0 -60 -20 20 60 100 140 180 0 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 19 Typ. capacitances (P) C =f(V DS); V GS=0 V; f =1 MHz 20 Typ. capacitances (N) C =f(V DS); V GS=0 V; f =1 MHz 102 102 Ciss Ciss Coss Coss 101 C [pF] C [pF] Crss 101 Crss 100 0 5 10 15 20 100 0 5 10 15 20 V DS [V] V DS [V] Rev.2.1 page 10 2009-02-11 BSD235C 25 Typ. gate charge (P) V GS=f(Q gate); I D=-0.53 A pulsed parameter: V DD 6 26 Typ. gate charge (N) V GS=f(Q gate); I D=0.95 A pulsed parameter: V DD 6 5 5 10 V 4 -4 V -10 V 4 4V 16 V -V GS [V] 3 -16 V V GS [V] 0.6 3 2 2 1 1 0 0 0.1 0.2 0.3 0.4 0.5 0 0 0.1 0.2 0.3 0.4 0.5 0.6 -Q gate [nC] Q gate [nC] 27 Drain-source breakdown voltage (P) V BR(DSS)=f(T j); I D=-250 µA 28 Drain-source breakdown voltage (N) V BR(DSS)=f(T j); I D=250 µA 25 24 23 22 25 24 23 22 -V BR(DSS) [V] 21 20 19 18 17 16 -60 -20 20 60 100 140 180 V BR(DSS) [V] 21 20 19 18 17 16 -60 -20 20 60 100 140 T j [°C] T j [°C] Rev.2.1 page 11 2009-02-11 BSD235C SOT-363 Package Outline: Footprint: Packing: Reflow soldering: Dimensions in mm Rev.2.1 page 12 2009-02-11 BSD235C Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.2.1 page 13 2009-02-11