BSF050N03LQ3G

BSF050N03LQ3 G OptiMOSTM3 Power-MOSFET Features • Optimized for high switching frequency DC/DC converter • Very low on-resistance R DS(on) • Excellent gate charge x R DS(on) product (FOM) • Low parasitic inductance • Low profile (2|I D|R DS(on)max, I D=30 A 37 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.0 page 2 2009-05-11 BSF050N03LQ3 G Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics 6) Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total Gate plateau voltage Gate charge total Q gs Q g(th) Q gd Q sw Qg V plateau Qg V DD=15 V, I D=20 A, V GS=0 to 10 V V DS=0.1 V, V GS=0 to 4.5 V V DD=15 V, V GS=0 V V DD=15 V, I D=20 A, V GS=0 to 4.5 V 5.7 3.5 2.7 5.4 11.9 3.0 25 21 42 V nC C iss C oss Crss t d(on) tr t d(off) tf V DD=15 V, V GS=10 V, I D=30 A, R G=1.6 Ω V GS=0 V, V DS=15 V, f =1 MHz 2250 1130 39 3.4 3.4 18 3.2 3000 1500 ns pF Values typ. max. Unit Gate charge total, sync. FET Output charge Reverse Diode Diode continuous forward current Diode pulse current Diode forward voltage Q g(sync) Q oss - 10.3 18 - nC IS I S,pulse V SD T C=25 °C V GS=0 V, I F=20 A, T j=25 °C V R=15 V, I F=I S, di F/dt =400 A/µs - 0.82 25 240 A V Reverse recovery charge 6) Q rr - - 16 nC See figure 16 for gate charge parameter definition Rev. 2.0 page 3 2009-05-11 BSF050N03LQ3 G 1 Power dissipation P tot=f(T C) 2 Drain current I D=f(T C); V GS≥10 V 30 70 25 60 50 20 P tot [W] 40 15 I D [A] 30 20 10 0 0 40 80 120 160 0 40 80 120 160 10 5 0 T C [°C] T C [°C] 3 Safe operating area I D=f(V DS); T C=25 °C; D =0 parameter: t p 103 limited by on-state resistance 1 µs 4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T 101 0.5 10 µs 102 100 µs 100 0.2 0.1 Z thJC [K/W] 0.05 I D [A] 101 DC 1 ms 10-1 0.02 0.01 single pulse 100 10 ms 10-2 10-1 10 -1 10-3 10 0 10 1 10 2 10-6 10-5 10-4 10-3 10-2 10-1 100 V DS [V] t p [s] Rev. 2.0 page 4 2009-05-11 BSF050N03LQ3 G 5 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS 200 5V 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 °C parameter: V GS 16 10 V 4.5 V 160 4V R DS(on) [mΩ ] 120 3.3 V 3.5 V I D [A] 8 4V 4.5 V 5V 80 3.5 V 10 V 7V 40 3.2 V 3V 2.8 V 0 0 1 2 3 0 0 10 20 30 40 50 V DS [V] I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 100 8 Typ. forward transconductance g fs=f(I D); T j=25 °C 200 80 150 60 g fs [S] 40 20 150 °C 25 °C I D [A] 100 50 0 0 1 2 3 4 5 0 0 40 80 120 160 V GS [V] I D [A] Rev. 2.0 page 5 2009-05-11 BSF050N03LQ3 G 9 Drain-source on-state resistance R DS(on)=f(T j); I D=20 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS; I D=250 µA 12 2.5 2 8 R DS(on) [mΩ ] 98 % V GS(th) [V] typ 1.5 1 4 0.5 0 -60 -20 20 60 100 140 180 0 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 104 1000 25 °C Ciss Coss 150 °C, 98% 103 100 C [pF] I F [A] 150 °C 25 °C, 98% 10 2 10 Crss 101 0 10 20 30 1 0.0 0.5 1.0 1.5 2.0 V DS [V] V SD [V] Rev. 2.0 page 6 2009-05-11 BSF050N03LQ3 G 13 Avalanche characteristics I AS=f(t AV); R GS=25 Ω parameter: T j(start) 100 14 Typ. gate charge V GS=f(Q gate); I D=20 A pulsed parameter: V DD 12 10 15 V 6V 24 V 8 10 100 °C 125 °C V GS [V] 1000 I AV [A] 25 °C 6 4 2 1 1 10 100 0 0 8 16 24 32 t AV [µs] Q gate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=1 mA 16 Gate charge waveforms 34 V GS 32 Qg 30 V BR(DSS) [V] 28 26 V g s(th) 24 22 Q g(th) Q gs -60 -20 20 60 100 140 180 Q sw Q gd Q g ate 20 T j [°C] Rev. 2.0 page 7 2009-05-11 BSF050N03LQ3 G Package Outline Rev. 2.0 page 8 2009-05-11 BSF050N03LQ3 G Package Outline PG-TDSON-8: Tape MG-WDSON-2 Dimensions in mm Rev. 2.0 page 9 2009-05-11 BSF050N03LQ3 G MG-WDSON-2 Dimensions in mm Recommended stencil thikness 150 µm Rev. 2.0 page 10 2009-05-11 BSF050N03LQ3 G Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.0 page 11 2009-05-11