BSF083N03LQG

BSF083N03LQ G OptiMOSTM2 Power-MOSFET Features • Optimized for high switching frequency DC/DC converter • Very low on-resistance R DS(on) • Excellent gate charge x R DS(on) product (FOM) • Low profile (2|I D|R DS(on)max, I D=30 A 26 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. See figure 3 for more detailed information 3) Rev. 2.0 page 2 2009-05-11 BSF083N03LQ G Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics 5) Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total Gate plateau voltage Gate charge total Q gs Q g(th) Q gd Q sw Qg V plateau Qg V DD=15 V, I D=20 A, V GS=0 to 10 V V DS=0.1 V, V GS=0 to 4.5 V V DD=15 V, V GS=0 V V DD=15 V, I D=20 A, V GS=0 to 4.5 V 3.9 1.9 2.5 4.5 8.5 3.2 18 11 V nC C iss C oss Crss t d(on) tr t d(off) tf V DD=15 V, V GS=10 V, I D=30 A, R G=1.6 Ω V GS=0 V, V DS=15 V, f =1 MHz 1350 430 58 3.3 3.2 14 2.8 1800 570 ns pF Values typ. max. Unit Gate charge total, sync. FET Output charge Reverse Diode Diode continuous forward current Diode pulse current Diode forward voltage Q g(sync) Q oss - 7.4 10 - nC IS I S,pulse V SD T C=25 °C V GS=0 V, I F=20 A, T j=25 °C V R=15 V, I F=I S, di F/dt =400 A/µs - 0.83 32 212 A V Reverse recovery charge 4) 5) Q rr - - 16 nC See figure 13 for more detailed information See figure 16 for gate charge parameter definition Rev. 2.0 page 3 2009-05-11 BSF083N03LQ G 1 Power dissipation P tot=f(T C) 2 Drain current I D=f(T C); V GS≥10 V 40 60 54 48 30 42 36 P tot [W] I D [A] 0 40 80 120 160 20 30 24 18 10 12 6 0 0 0 40 80 120 160 T C [°C] T C [°C] 3 Safe operating area I D=f(V DS); T C=25 °C; D =0 parameter: t p 103 limited by on-state resistance 4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T 101 1 µs 0.5 10 2 10 µs 10 0 0.2 0.1 100 µs Z thJC [K/W] I D [A] DC 0.05 10 1 10 -1 0.02 0.01 single pulse 1 ms 10 ms 100 10-2 10-1 10 -1 10-3 10 0 10 1 10 2 10-6 10-5 10-4 10-3 10-2 10-1 100 V DS [V] t p [s] Rev. 2.0 page 4 2009-05-11 BSF083N03LQ G 5 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS 120 10 V 5V 4.5 V 3.5 V 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 °C parameter: V GS 20 16 4V 80 R DS(on) [mΩ ] 12 4.5 V I D [A] 5V 4V 8 10 V 40 3.5 V 4 3.2 V 3V 2.8 V 0 0 1 2 3 0 0 10 20 30 40 50 V DS [V] I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 100 8 Typ. forward transconductance g fs=f(I D); T j=25 °C 150 80 100 60 40 50 20 150 °C 25 °C 0 0 1 2 3 4 5 g fs [S] 0 0 40 80 120 160 I D [A] V GS [V] I D [A] Rev. 2.0 page 5 2009-05-11 BSF083N03LQ G 9 Drain-source on-state resistance R DS(on)=f(T j); I D=20 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS; I D=250 µA 16 2.5 2 12 98 % R DS(on) [mΩ ] 8 V GS(th) [V] typ 1.5 1 4 0.5 0 -60 -20 20 60 100 140 180 0 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 104 1000 25 °C 150 °C, 98% 103 Ciss 100 Coss C [pF] I F [A] 150 °C 25 °C, 98% 102 Crss 10 101 0 10 20 30 1 0.0 0.5 1.0 1.5 2.0 V DS [V] V SD [V] Rev. 2.0 page 6 2009-05-11 BSF083N03LQ G 13 Avalanche characteristics I AS=f(t AV); R GS=25 Ω parameter: T j(start) 100 14 Typ. gate charge V GS=f(Q gate); I D=20 A pulsed parameter: V DD 12 10 6V 15 V 24 V 8 25 °C 10 100 °C 125 °C V GS [V] 1000 I AV [A] 6 4 2 1 1 10 100 0 0 4 8 12 16 20 t AV [µs] Q gate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=1 mA 16 Gate charge waveforms 36 V GS 34 Qg 32 30 V BR(DSS) [V] 28 26 V g s(th) 24 22 Q g(th) Q gs -60 -20 20 60 100 140 180 Q sw Q gd Q g ate 20 T j [°C] Rev. 2.0 page 7 2009-05-11 BSF083N03LQ G Package Outline Rev. 2.0 page 8 2009-05-11 BSF083N03LQ G Package Outline PG-TDSON-8: Tape CanPAK Dimensions in mm Rev. 2.0 page 9 2009-05-11 BSF083N03LQ G Dimensions in mm Raccomended stencil thikness 150 µm Rev. 2.0 page 10 2009-05-11 BSF083N03LQ G Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.0 page 11 2009-05-11