BSL202SN

BSL202SN OptiMOS®2 Small-Signal-Transistor Features • N-channel • Enhancement mode • Super Logic level (2.5V rated) • Avalanche rated • dv /dt rated • Pb-free lead plating; RoHS compliant Product Summary V DS R DS(on),max V GS=4.5 V V GS=2.5 V ID 20 22 36 7.5 A V mΩ TSOP-6 6 5 4 1 2 3 Type BSL202SN Package TSOP-6 Tape and Reel Information L6327: 3000 pcs/ reel Marking sPD Lead Free Yes Packing Non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T A=25 °C T A=70 °C Pulsed drain current Avalanche energy, single pulse I D,pulse E AS T A=25 °C I D=7.5 A, R GS=25 Ω I D=7.5 A, V DS=16 V, di /dt =200 A/µs, T j,max=150 °C Value 7.5 6.0 30 30 mJ Unit A Reverse diode d v /dt Gate source voltage Power dissipation1) Operating and storage temperature ESD Class Soldering Temperature IEC climatic category; DIN IEC 68-1 Rev 1.07 dv /dt V GS P tot T j, T stg 6 ±12 kV/µs V W °C T A=25 °C 2 -55 ... 150 JESD22-A114 -HBM 0 (0V to 250V) 260 °C 55/150/56 page 1 2010-03-26 BSL202SN Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - minimal footprint SMD version, device on PCB R thJS R thJA minimal footprint 6 cm2 cooling area1) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics V (BR)DSS V GS= 0 V, I D= 250 µA V GS(th) I DSS V DS=VGS, I D=30 µA V DS=20 V, V GS=0 V, T j=25 °C V DS=20 V, V GS=0 V, T j=150 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=12 V, V DS=0 V V GS=2.5 V, I D=5.9 A V GS=4.5 V, I D=7.5 A Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=7.5 A Values typ. max. Unit - - 50 230 62.5 K/W Drain-source breakdown voltage Gate threshold voltage Drain-source leakage current 20 0.7 - 0.95 - 1.2 1 V µA - 26 17 25 100 100 36 22 S nA mΩ 1) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (single layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. (t < 5 sec.) Rev 1.07 page 2 2010-03-26 BSL202SN Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge IS I S,pulse V SD t rr Q rr T A=25 °C V GS=0 V, I F=7.5 A, T j=25 °C V R=10 V, I F=7.5 A, di F/dt =100 A/µs 0.8 14.7 4.62 2 30 1.2 V ns nC A Q gs Q gd Qg V plateau V DD=10 V, I D=7.5 A, V GS=0 to 4.5 V 1.82 1.1 5.8 2 2.42 1.6 8.7 V nC C iss C oss Crss t d(on) tr t d(off) tf V DD=10 V, V GS=4.5 V, I D=7.5 A, R G=6 Ω V GS=0 V, V DS=10 V, f =1 MHz 863 278 40 8.26 27.5 18.9 4.06 1147 370 60 ns pF Values typ. max. Unit Rev 1.07 page 3 2010-03-26 BSL202SN 1 Power dissipation P tot=f(T A) 2 Drain current I D=f(T A); V GS≥4.5 V 8 2 7 1.6 6 5 P tot [W] I D [A] 1.2 4 0.8 3 2 0.4 1 0 0 40 80 120 160 0 0 40 80 120 160 T A [°C] T A [°C] 3 Safe operating area I D=f(V DS); T A=25 °C; D =0 parameter: t p 102 limited by on-state resistance 10 µs 4 Max. transient thermal impedance Z thJA=f(t p) parameter: D =t p/T 102 0.5 10 1 100 µs 1 ms 0.2 10 1 Z thJA [K/W] 100 10 ms 0.1 0.05 I D [A] DC 10-1 0.02 100 0.01 10-2 single pulse 10-3 10 -2 10-1 10 -1 10 0 10 1 10 2 10-5 10-4 10-3 10-2 10-1 100 101 V DS [V] t p [s] Rev 1.07 page 4 2010-03-26 BSL202SN 5 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS 16 4.5 V 3V 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 °C parameter: V GS 60 1.8 V 2V 2.2 V 14 2.5 V 50 12 2.4 V 40 8 R DS(on) [mΩ ] 10 2.2 V I D [A] 30 2.5 V 3V 6 2V 20 3.5 V 4.5 V 6V 4 10 2 1.8 V 1.6 V 0 0 1 0 2 3 0 4 8 12 16 V DS [V] I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max 8 Typ. forward transconductance g fs=f(I D); T j=25 °C 8 30 7 25 6 20 5 25 °C 4 g fs [S] 150 °C I D [A] 15 3 10 2 5 1 0 0 1 2 3 0 0 1 2 3 4 5 6 7 8 V GS [V] I D [A] Rev 1.07 page 5 2010-03-26 BSL202SN 9 Drain-source on-state resistance R DS(on)=f(T j); I D=7.5 A; V GS=4.5 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V DS=VGS; I D=30 µA parameter: I D 40 1.6 30 1.2 98 % R DS(on) [mΩ ] 98 % 20 typ V GS(th) [V] typ 0.8 2% 10 0.4 0 -60 -20 20 60 100 140 0 -60 -20 20 60 100 140 T j [°C] T j [°C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 104 102 101 103 Ciss 100 C [pF] Coss I F [A] 10-1 102 Crss 150 °C 25 °C 150 °C, 98% 25 °C, 98% 10-2 101 0 5 10 15 20 10-3 0 0.4 0.8 1.2 1.6 V DS [V] V SD [V] Rev 1.07 page 6 2010-03-26 BSL202SN 13 Avalanche characteristics I AS=f(t AV); R GS=25 Ω parameter: T j(start) 101 25 °C 14 Typ. gate charge V GS=f(Q gate); I D=7.5 A pulsed parameter: V DD 10 9 8 100 °C 7 6 16 V 10 0 V GS [V] I AV [A] 125 °C 10 V 5 4 3 2 1 4V 10-1 100 101 102 103 0 0 2 4 6 8 10 12 14 t AV [µs] Q gate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=250 µA 16 Gate charge waveforms 25 V GS 24 23 22 Qg V BR(DSS) [V] 21 20 19 18 17 16 -60 -20 20 60 100 140 V g s(th) Q g(th) Q gs Q sw Q gd Q g ate T j [°C] Rev 1.07 page 7 2010-03-26 BSL202SN Package Outline: TSOP6 2.9 ±0.2 (2.25) (0.35) B 1.1 MAX. 0.1 MAX. 0.25 ±0.1 10˚ MAX. 2.5 ±0.1 1 2 3 0.35 +0.1 -0.05 0.95 1.9 0.2 M B 6x 0.15 +0.1 -0.06 0.2 M A A GPX09300 Footprint: Packaging: 0.5 4 1.9 2.9 0.2 0.95 Remark: Wave soldering possible dep. on customers process conditions HLG09283 Pin 1 marking 3.15 2.7 8 1.15 CPWG5899 Dimensions in mm Rev 1.07 page 8 1.6 ±0.1 2010-03-26 6 5 4 10˚ MAX. BSL202SN Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev 1.07 page 9 2010-03-26