BSL211

Preliminary data BSL211SP OptiMOS-P Small-Signal-Transistor Feature • P-Channel • Enhancement mode • Super Logic Level (2.5 V rated) • 150°C operating temperature • Avalanche rated • dv/dt rated Product Summary VDS RDS(on) ID -20 67 -4.7 P-TSOP6-6 V mΩ A 4 5 6 3 2 1 Type BSL211SP Package P-TSOP6-6 Ordering Code Q67042-S4063 Marking sPB Gate pin 3 Drain pin 1,2, 5,6 Source pin 4 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TA=25°C TA=70°C Symbol ID Value -4.7 -3.8 Unit A Pulsed drain current TA=25°C ID puls EAS dv/dt VGS Ptot Tj , Tstg -18.8 26 -6 ±12 2 -55... +150 55/150/56 mJ kV/µs V W °C Avalanche energy, single pulse ID =-4.7 A , VDD =-10V, RGS =25Ω Reverse diode dv/dt IS =-4.7A, VDS =-16V, di/dt=200A/µs, Tjmax =150°C Gate source voltage Power dissipation TA=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2001-12-06 Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) BSL211SP Symbol min. RthJS RthJA - Values typ. max. 50 230 62.5 Unit K/W Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS =0V, ID =-250µA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) -20 -0.6 Values typ. -0.9 max. -1.2 Unit V Gate threshold voltage, VGS = VDS ID =-25µA Zero gate voltage drain current VDS =-20V, VGS =0, Tj =25°C VDS =-20V, VGS =0, Tj =150°C µA -0.1 -10 -10 94 54 -1 -100 -100 110 67 nA mΩ Gate-source leakage current VGS =-12V, VDS =0 Drain-source on-state resistance VGS =-2.5V, ID =-3.7A Drain-source on-state resistance VGS =-4.5, ID =-4.7A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air; t ≤ 5 sec. Page 2 2001-12-06 Preliminary data Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time gfs Ciss Coss Crss td(on) tr td(off) tf VDD =-10V, VGS =-4.5V, ID =-1A, RG=6Ω çVDS ç≥2*çIDç*RDS(on)max ID =-3.8A VGS =0, VDS =-15V, f=1MHz BSL211SP Symbol Conditions min. 6.2 - Values typ. 12.4 654 241 197 8.7 13.9 25 23.3 max. 13 21 37.3 35 Unit S pF ns Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr VGS =0, |IF | = |ID | VR =-10V, |IF | = |lD |, diF /dt=100A/µs Qgs Qgd Qg VDD =-10V, ID =-4.7A - -1.3 -4.7 -8.3 -2 -2 -7 -12.4 - nC VDD =-10V, ID =-4.7A, VGS =0 to -4.5V V(plateau) VDD =-10V, ID =-4.7A V IS ISM TA=25°C - -0.94 20.6 6.3 -2 -18.8 -1.4 25.8 7.9 A V ns nC Page 3 2001-12-06 Preliminary data 1 Power dissipation Ptot = f (TA ) 2.2 BSL211SP BSL211SP 2 Drain current ID = f (TA ) parameter: |VGS |≥ 4.5 V -5.5 BSL211SP W 1.8 1.6 A -4.5 -4 Ptot 1.2 1 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 ID °C 160 1.4 -3.5 -3 -2.5 -2 -1.5 -1 -0.5 0 0 20 40 60 80 100 120 °C 160 TA TA 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TA = 25 °C -10 2 BSL211SP 4 Transient thermal impedance ZthJS = f (tp ) parameter : D = tp /T 10 2 BSL211SP K/W A /I D = RD o S( n) V DS tp = 41.0 µs 10 1 -10 1 100 µs Z thJS 1 ms 10 0 ID -10 0 10 ms 10 -1 D = 0.50 0.20 10 -2 0.10 0.05 single pulse -10 -1 DC 10 -3 0.02 0.01 -10 -2 -1 -10 -10 0 -10 1 V -10 2 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS Page 4 tp 2001-12-06 Preliminary data 5 Typ. output characteristic ID = f (VDS ); Tj=25°C parameter: tp = 80 µs 30 Vgs = -3.5V BSL211SP 6 Typ. drain-source on resistance RDS(on) = f (ID ) parameter: VGS 0.2 A Ω Vgs = -2.3V Vgs = -2.5V Vgs = -3V Vgs = -3.5V - ID 20 Vgs = -3V RDS(on) Vgs = -4V Vgs = -4.5V Vgs = -5.5V Vgs = -7V 0.15 0.125 Vgs = - 4V Vgs = - 4.5V Vgs= - 5.5V Vgs = - 7V 15 0.1 10 Vgs = -2.5V 0.075 0.05 Vgs = -2.3V 5 Vgs = -2V 0.025 0 0 1 2 3 4 5 6 7 8 V 10 0 0 5 10 15 20 A 30 - V DS - ID 7 Typ. transfer characteristics ID= f ( VGS ); |VDS |≥ 2 x|ID | x RDS(on)max parameter: tp = 80 µs 32 A 8 Typ. forward transconductance gfs = f(ID); Tj=25°C parameter: tp = 80 µs 24 S 24 18 - ID 20 g fs V 15 16 12 12 9 8 6 4 3 0 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.6 0 0 4 8 12 16 20 24 A 32 - V GS - ID Page 5 2001-12-06 Preliminary data 9 Drain-source on-resistance RDS(on) = f(Tj ) parameter: ID = -4.7 A, VGS = -4.5 V 90 BSL211SP 10 Gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS , ID = -25 µA 1.4 V mΩ - VGS(th) RDS(on) 1 98% 70 98% 0.8 typ. 60 0.6 typ. 0.4 2% 50 0.2 40 -60 -20 20 60 100 °C 160 0 -60 -20 20 60 100 °C 160 Tj Tj 11 Typ. capacitances C = f (VDS) parameter: VGS =0, f=1 MHz 10 3 12 Forward character. of reverse diode IF = f (VSD ) parameter: Tj , tp = 80 µs -10 2 BSL211SP A Ciss -10 1 C pF Coss IF -10 0 Crss Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 2 0 5 10 V 20 -10 -1 0 -0.4 -0.8 -1.2 -1.6 -2 -2.4 V -3 - VDS VSD Page 6 2001-12-06 Preliminary data 13 Typ. avalanche energy EAS = f (Tj ), par.: ID = -4.7 A VDD = -10 V, RGS = 25 Ω 30 BSL211SP 14 Typ. gate charge |VGS| = f (QGate ) parameter: ID = -4.7 A pulsed 12 V mJ 10 9 20 - VGS E AS 8 7 0.2 VDS max. 0.5 VDS max. 0.8 VDS max. 15 6 5 10 4 3 5 2 1 0 25 50 75 100 °C 150 0 0 2 4 6 8 10 12 14 nC 18 Tj |QGate| 15 Drain-source breakdown voltage V(BR)DSS = f (Tj ) -24.5 BSL211SP V -23.5 V (BR)DSS -23 -22.5 -22 -21.5 -21 -20.5 -20 -19.5 -19 -18.5 -18 -60 -20 20 60 100 °C 180 Tj Page 7 2001-12-06 Preliminary data Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. BSL211SP Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. 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