BSL215C

BSL215C OptiMOS™2 + OptiMOS™-P 2 Small Signal Transistor Features · Complementary P + N channel · Enhancement mode · Super Logic level (2.5V rated) · Avalanche rated · Qualified according to AEC Q101 · 100% lead-free; RoHS compliant PG-TSOP6 6 5 Product Summary P V DS R DS(on),max V GS=±4.5 V V GS=±2.5 V ID -20 150 280 -1.5 N 20 140 250 1.5 A V mΩ 4 1 2 3 Type BSL215C Package PG-TSOP-6 Tape and Reel Information L6327: 3000 pcs / reel 1) Marking sPH Lead Free Yes Packing Non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions P Value N 1.5 1.2 6 3.7 ±12 Unit Continuous drain current ID T A=25 °C T A=70 °C -1.5 -1.2 -6 11 A Pulsed drain current Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature ESD class Soldering temperature IEC climatic category; DIN IEC 68-1 1) I D,pulse E AS V GS P tot T j, T stg T A=25 °C P: I D=-1.5 A, N: I D=1.5 A, R GS=25 Ω mJ V W °C T A=25 °C 0.5 -55 ... 150 JESD22-A114-HBM T solder 0 (2|I D|R DS(on)max, I D=-1.2 A |V DS|>2|I D|R DS(on)max, I D=1.2 A 20 -1.2 0.7 -0.9 0.95 -20 -0.6 1.2 -1 µA V N - - 1 P - - -100 N Gate-source leakage current P N Drain-source on-state resistance - - 100 - 163 173 102 108 4.5 ±100 280 250 150 140 - nA mΩ P R DS(on) N P N Transconductance P g fs S N - 4 - 2) Performed on 40mm2 FR4 PCB. The traces are 1mm wide, 70µm thick and 20mm long; they are present on both sides of the PCB Rev.2.1 page 2 2009-02-10 BSL215C Parameter Symbol Conditions min. Dynamic characteristics Input capacitance P C iss N Output capacitance P C oss N Reverse transfer capacitance P Crss N Turn-on delay time P t d(on) N Rise time P tr N Turn-off delay time P t d(off) N Fall time P tf N Gate Charge Characteristics Gate to source charge Gate to drain charge Switching charge Gate plateau voltage Gate to source charge Gate to drain charge Switching charge Gate plateau voltage P Q gs Q gd Qg V plateau N Q gs Q gd Qg V plateau V DD=10 V, I D=1.5 A, V GS=0 to 4.5 V V DD=-10 V, I D=-1.5 A, V GS=0 to -5 V -0.49 -1.9 -3.0 -1.9 0.24 0.2 0.73 2.2 nC P: V DD=-10 V, V GS=-4.5V, R G=6 Ω, I D=-1.5 A N: V DD=10 V, V GS=4.5 V, R G=6 Ω, I D=1.5 A V GS=0 V, P: V DS=-10 V, N: V DS= 10 V, f =1 MHz 270 110 110 46 94 6.1 6.7 4.1 9.7 7.6 14.5 6.8 14.0 1.4 346 143 128 62 128 9 ns pF Values typ. max. Unit Rev.2.1 page 3 2009-02-10 BSL215C Parameter Symbol Conditions min. Reverse Diode Diode continuous forward current P IS N Diode pulse current P I S,pulse N Diode forward voltage P V SD V GS=0 V, I F=-1.5 A, T j=25 °C V GS=0 V, I F=1.5 A, T j=25 °C T C=25 °C -0.8 -0.5 0.5 -6 6 -1.1 V A Values typ. max. Unit N Reverse recovery time P t rr N Reverse recovery charge P Q rr N - 0.8 21 8.4 -3.7 1.7 1.1 nC ns V R=±10 V, I F=I S, di F/dt =100 A/µs - Rev.2.1 page 4 2009-02-10 BSL215C 1 Power dissipation (P) P tot=f(T A) 2 Power dissipation (N) P tot=f(T A) 0.6 0.6 0.5 0.5 0.4 0.4 P tot [W] P tot [W] 0.3 0.3 0.2 0.2 0.1 0.1 0 0 40 80 120 160 0 0 40 80 120 160 T A [°C] T A [°C] 3 Drain current (P) I D=f(T A) parameter: V GS≤-4.5 V 1.6 4 Drain current (N) I D=f(T A) parameter: V GS≥4.5 V 1.6 1.4 1.4 1.2 1.2 1 1 -I D [A] 0.8 I D [A] 0 40 80 120 160 0.8 0.6 0.6 0.4 0.4 0.2 0.2 0 0 0 40 80 120 160 T A [°C] T A [°C] Rev.2.1 page 5 2009-02-10 BSL215C 5 Safe operating area (P) I D=f(V DS); T A=25 °C; D =0 parameter: t p 101 1 µs 10 µs 100 µs 100 µs 10 µs 6 Safe operating area (N) I D=f(V DS); T A=25 °C; D =0 parameter: t p 101 1 µs 100 1 ms 100 1 ms -I D [A] 10 ms I D [A] 10 ms 10-1 DC 10-1 DC 10-2 10 -1 10-2 10 0 10 1 10 2 10-1 100 101 102 -V DS [V] V DS [V] 7 Max. transient thermal impedance (P) Z thJA=f(t p) parameter: D =t p/T 103 8 Max. transient thermal impedance (N) Z thJA=f(t p) parameter: D =t p/T 103 102 0.5 0.5 102 Z thJA [K/W] 0.2 0.1 0.05 Z thJA [K/W] 0.2 0.1 0.05 10 1 0.02 0.01 10 1 0.02 0.01 single pulse single pulse 100 10 -5 100 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10-5 10-4 10-3 10-2 10-1 100 101 102 t p [s] t p [s] Rev.2.1 page 6 2009-02-10 BSL215C 9 Typ. output characteristics (P) I D=f(V DS); T j=25 °C parameter: V GS 8 10 V 4.5 V 10 Typ. output characteristics (N) I D=f(V DS); T j=25 °C parameter: V GS 8 7 3.3 V 4.5 V 3.5 V 7 10 V 3V 6 3V 6 2.5 V 5 5 I D [A] 4 I D [A] 2.3 V 4 3 3 2.5 V 2 2V 2 2.3 V 1 1.8 V 1 2V 1.8 V 0 0 1 2 3 0 0 1 2 3 V DS [V] V DS [V] 11 Typ. drain-source on resistance (P) R DS(on)=f(I D); T j=25 °C parameter: V GS 280 2V 2.5 V 12 Typ. drain-source on resistance (N) R DS(on)=f(I D); T j=25 °C parameter: V GS 280 2.2 V 2.5 V 3V 240 240 200 2.5 V 200 160 R DS(on) [mΩ ] R DS(on) [mΩ] 3V 3.3 V 4.5 V 6V 160 3.5 V 120 120 4.5 V 6V 80 80 40 40 0 0 2 4 6 8 0 0 2 4 6 8 I D [A] I D [A] Rev.2.1 page 7 2009-02-10 BSL215C 13 Typ. transfer characteristics (P) I D=f(V GS); |V DS |>2 | ID| RDS(on)max parameter: T j 6 14 Typ. transfer characteristics (N) I D=f(V GS); |V DS |>2 | I D | R DS(on)max parameter: T j 6 5 5 4 4 -I D [A] I D [A] 150 °C 3 3 2 2 150 °C 1 25 °C 1 25 °C 0 0 1 2 3 0 0 1 2 3 -V GS [V] V GS [V] 15 Drain-source on-state resistance (P) R DS(on)=f(T j); I D=-1.5 A; V GS=-4.5 V 16 Drain-source on-state resistance (N) R DS(on)=f(T j); I D=1.5 A; V GS=4.5 V 240 240 200 98% 200 160 160 98% typ R DS(on) [mΩ ] 120 typ R DS(on) [mΩ ] 100 140 180 120 80 80 40 40 0 -60 -20 20 60 0 -60 -20 20 60 100 140 180 T j [°C] T j [°C] Rev.2.1 page 8 2009-02-10 BSL215C 17 Typ. gate threshold voltage (P) V GS(th)=f(T j); V GS=V DS; I D=-11 µA 18 Typ. gate threshold voltage (N) V GS(th)=f(T j); V GS=V DS; I D=3.7 µA 1.6 1.6 1.2 98% 1.2 98% -V GS(th) [V] V GS(th) [V] typ typ 0.8 0.8 2% 2% 0.4 0.4 0 -60 -20 20 60 100 140 180 0 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 19 Typ. capacitances (P) C =f(V DS); V GS=0 V; f =1 MHz 20 Typ. capacitances (N) C =f(V DS); V GS=0 V; f =1 MHz 103 103 Ciss Ciss 102 Coss C [pF] Coss 10 2 Crss C [pF] 101 Crss 101 0 10 20 100 0 5 10 15 20 -V DS [V] V DS [V] Rev.2.1 page 9 2009-02-10 BSL215C 21 Forward characteristics of reverse diode (P) I F=f(V SD) parameter: T j 101 22 Forward characteristics of reverse diode (N) I F=f(V SD) parameter: T j 101 25 °C 100 150 °C 25 °C 100 150 °C -I F [A] 10-1 150 °C, 98% I F [A] 10-1 98%, 150°C 98%, 25 °C 25 °C, 98% 10-2 0 0.5 1 1.5 2 10-2 0 0.4 0.8 1.2 1.6 -V SD [V] V SD [V] 23 Avalanche characteristics (P) I AS=f(t AV); R GS=25 Ω parameter: T j(start) 101 24 Avalanche characteristics (N) I AS=f(t AV); R GS=25 Ω parameter: T j(start) 101 -I AV [A] 100 125 °C 100 °C 25 °C I AV [A] 100 125 °C 100 °C 25 °C 10-1 10 0 10-1 10 1 10 2 10 3 100 101 102 103 t AV [µs] t AV [µs] Rev.2.1 page 10 2009-02-10 BSL215C 25 Typ. gate charge (P) V GS=f(Q gate); I D=-1.5 A pulsed parameter: V DD 6 -4 V -16 V 26 Typ. gate charge (N) V GS=f(Q gate); I D=1.5 A pulsed parameter: V DD 6 5 -10 V 5 10 V 4V 16 V 4 4 -V GS [V] 3 V GS [V] 0 1 2 3 4 5 3 2 2 1 1 0 0 0 0.2 0.4 0.6 0.8 1 -Q gate [nC] Q gate [nC] 27 Drain-source breakdown voltage (P) V BR(DSS)=f(T j); I D=-250 µA 28 Drain-source breakdown voltage (N) V BR(DSS)=f(T j); I D=250 µA 25 24 23 22 25 24 23 22 -V BR(DSS) [V] 21 20 19 18 17 16 -60 -20 20 60 100 140 180 V BR(DSS) [V] 21 20 19 18 17 16 -60 -20 20 60 100 140 180 T j [°C] T j [°C] Rev.2.1 page 11 2009-02-10 BSL215C BSL21 Package Outline: TSOP6 2.9 ±0.2 (2.25) (0.35) B 1.1 MAX. 0.1 MAX. 0.25 ±0.1 10˚ MAX. 2.5 ±0.1 1 2 3 0.35 +0.1 -0.05 0.95 1.9 0.2 M B 6x 0.15 +0.1 -0.06 0.2 M A A GPX09300 Footprint: Packaging: 0.5 4 1.9 2.9 0.2 0.95 Remark: Wave soldering possible dep. Pin 1 marking on customers process conditions HLG09283 3.15 2.7 8 1.15 CPWG5899 Dimensions in mm Rev.2.1 page 12 1.6 ±0.1 2009-02-10 6 5 4 10˚ MAX. BSL215C Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.2.1 page 13 2009-02-10