BSL316C

BSL316C OptiMOS™ 2 + OptiMOS™-P 2 Small Signal Transistor Product Summary Features · Complementary P + N channel · Enhancement mode · Logic level (4.5V rated) · Avalanche rated · Qualified according to AEC Q101 · 100% lead-free; RoHS compliant PG-TSOP6 6 5 P V DS R DS(on),max V GS=±10 V V GS=±4.5 V ID -30 150 270 -1.5 N 30 160 280 1.4 A V mΩ 4 1 2 3 Type BSL316C Package PG-TSOP-6 Tape and Reel Information L6327: 3000 pcs / reel 1) Marking sPJ Lead Free Yes Packing Non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions P Value N 1.4 1.1 5.6 3.7 ±20 Unit Continuous drain current ID T A=25 °C T A=70 °C -1.5 -1.2 -6.0 11 A Pulsed drain current Avalanche energy, single pulse Gate source voltage Power dissipation1) Operating and storage temperature ESD class Soldering temperature IEC climatic category; DIN IEC 68-1 1) I D,pulse E AS V GS P tot T j, T stg T A=25 °C P: I D=-1.5 A, N: I D=1.4 A, R GS=25 Ω mJ V W °C T A=25 °C 0.5 -55 ... 150 JESD22-A114-HBM T solder 0 (2|I D|R DS(on)max, I D=-1.18 A |V DS|>2|I D|R DS(on)max, I D=1.1 A 30 -2 1.2 -1.5 1.6 177 191 113 119 2.7 -30 -1 2 -1 1 -100 100 ±100 270 280 150 160 S nA mΩ µA V P R DS(on) N P N Transconductance P g fs N - 2.3 - Performed on 40mm2 FR4 PCB. The traces are 1mm wide, 70µm thick and 20mm long; they are present on both sides of the PCB 2) Rev. 2.1 page 2 2009-02-10 BSL316C Parameter Symbol Conditions min. Dynamic characteristics Input capacitance P C iss N Output capacitance P C oss N Reverse transfer capacitance P Crss N Turn-on delay time P t d(on) N Rise time P tr N Turn-off delay time P t d(off) N Fall time P tf N Gate Charge Characteristics Gate to source charge Gate to drain charge Switching charge Gate plateau voltage Gate to source charge Gate to drain charge Switching charge Gate plateau voltage P Q gs Q gd Qg V plateau N Q gs Q gd Qg V plateau V DD=15 V, I D=1.4 A, V GS=0 to 5 V V DD=-15 V, I D=-1.5 A, V GS=0 to -5 V -0.6 -1.2 -2.4 -2.9 0.3 0.2 0.6 3.4 nC P: V DD=-15 V, V GS=-10 V, R G=6 Ω, I D=-1.5 A N: V DD=15 V, V GS=10 V, R G=6 Ω, I D=1.4 A V GS=0 V, P: V DS=-15 V, N: V DS= 15 V, f =1 MHz 212 71 69 26 56 5 5.0 3.4 6.5 2.3 14.3 5.8 7.5 1.0 282 94 91 35 84 7 ns pF Values typ. max. Unit Rev. 2.1 page 3 2009-02-10 BSL316C Parameter Symbol Conditions min. Reverse Diode Diode continuous forward current P IS N Diode pulse current P I S,pulse N Diode forward voltage P V SD V GS=0 V, I F=-1.5 A, T j=25 °C V GS=0 V, I F=1.4 A, T j=25 °C T C=25 °C -0.8 -0.5 0.5 -6.0 5.6 -1.1 V A Values typ. max. Unit N Reverse recovery time P t rr N Reverse recovery charge P Q rr N - 0.86 8.2 9.1 2.1 2.6 1.1 nC ns V R=±15 V, I F=I S, di F/dt =100 A/µs - Rev. 2.1 page 4 2009-02-10 BSL316C 1 Power dissipation (P) P tot=f(T A) 2 Power dissipation (N) P tot=f(T A) 0.6 0.6 0.5 0.5 0.4 0.4 P tot [W] P tot [W] 0.3 0.3 0.2 0.2 0.1 0.1 0 0 40 80 120 160 0 0 40 80 120 160 T A [°C] T A [°C] 3 Drain current (P) I D=f(T A) parameter: V GS≤-10 V 1.6 4 Drain current (N) I D=f(T A) parameter: V GS≥10 V 1.6 1.4 1.4 1.2 1.2 1 1 -I D [A] 0.8 I D [A] 0 40 80 120 160 0.8 0.6 0.6 0.4 0.4 0.2 0.2 0 0 0 40 80 120 160 T A [°C] T A [°C] Rev. 2.1 page 5 2009-02-10 BSL316C 5 Safe operating area (P) I D=f(V DS); T A=25 °C; D =0 parameter: t p 101 1 µs 10 µs 100 µs 1 ms 100 µs 10 µs 6 Safe operating area (N) I D=f(V DS); T A=25 °C; D =0 parameter: t p 101 1 µs 100 10 ms 100 10 ms 1 ms -I D [A] DC I D [A] DC 10-1 10-1 10-2 10 -1 10-2 10 0 10 1 10 2 10-1 100 101 102 -V DS [V] V DS [V] 7 Max. transient thermal impedance (P) Z thJA=f(t p) parameter: D =t p/T 103 8 Max. transient thermal impedance (N) Z thJA=f(t p) parameter: D =t p/T 103 102 0.5 0.5 102 Z thJA [K/W] 0.2 0.1 0.05 Z thJA [K/W] 0.2 0.1 0.05 10 1 0.02 0.01 10 1 0.02 0.01 single pulse single pulse 100 10 -5 100 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10-5 10-4 10-3 10-2 10-1 100 101 102 t p [s] t p [s] Rev. 2.1 page 6 2009-02-10 BSL316C 9 Typ. output characteristics (P) I D=f(V DS); T j=25 °C parameter: V GS 6 -10 V -5 V -4.5 V -4 V 10 Typ. output characteristics (N) I D=f(V DS); T j=25 °C parameter: V GS 6 10 V 5V 4.5 V 5 5 4 -3.5 V 4 -I D [A] 3 I D [A] 4V 3 2 -3 V 2 3.5 V 1 -2.5 V 1 3V 0 0 1 2 3 0 0 1 2 2.5 V 3 -V DS [V] V DS [V] 11 Typ. drain-source on resistance (P) R DS(on)=f(I D); T j=25 °C parameter: V GS 400 12 Typ. drain-source on resistance (N) R DS(on)=f(I D); T j=25 °C parameter: V GS 400 350 -3 V -3.5 V 350 3.5 V 300 300 4V -4 V R DS(on) [mΩ ] R DS(on) [mΩ ] 250 250 4.5 V 200 -4.5 V -5 V 200 5V 150 -10 V 150 10 V 100 100 50 50 0 0 1 2 3 4 5 0 0 1 2 3 4 5 -I D [A] I D [A] Rev. 2.1 page 7 2009-02-10 BSL316C 13 Typ. transfer characteristics (P) I D=f(V GS); |V DS |>2 | ID| RDS(on)max parameter: T j 6 14 Typ. transfer characteristics (N) I D=f(V GS); |V DS |>2 | I D | R DS(on)max parameter: T j 6 5 25 °C 5 25 °C 150 °C 4 4 -I D [A] I D [A] 150 °C 3 3 2 2 1 1 0 0 1 2 3 4 5 0 0 1 2 3 4 5 -V GS [V] V GS [V] 15 Drain-source on-state resistance (P) R DS(on)=f(T j); I D=-1.5 A; V GS=-10 V 16 Drain-source on-state resistance (N) R DS(on)=f(T j); I D=1.4 A; V GS=10 V 300 300 250 250 200 200 R DS(on) [mΩ ] 150 98% R DS(on) [mΩ ] 98% 150 typ 100 typ 100 50 50 0 -60 -20 20 60 100 140 180 0 -60 -20 20 60 100 140 180 T j [°C] T j [°C] Rev. 2.1 page 8 2009-02-10 BSL316C 17 Typ. gate threshold voltage (P) V GS(th)=f(T j); V GS=V DS; I D=-11 µA 18 Typ. gate threshold voltage (N) V GS(th)=f(T j); V GS=V DS; I D=3.7 µA 2.8 2.8 2.4 2.4 max 2 min 2 -V GS(th) [V] V GS(th) [V] 1.6 typ 1.6 typ 1.2 1.2 min 0.8 max 0.8 0.4 0.4 0 -60 -20 20 60 100 140 180 0 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 19 Typ. capacitances (P) C =f(V DS); V GS=0 V; f =1 MHz 20 Typ. capacitances (N) C =f(V DS); V GS=0 V; f =1 MHz 103 102 Ciss Coss Ciss C [pF] 102 Coss C [pF] 101 Crss Crss 101 0 10 20 30 100 0 10 20 30 -V DS [V] V DS [V] Rev. 2.1 page 9 2009-02-10 BSL316C 21 Forward characteristics of reverse diode (P) I F=f(V SD) parameter: T j 101 22 Forward characteristics of reverse diode (N) I F=f(V SD) parameter: T j 101 100 150 °C 25 °C 100 150 °C 25 °C -I F [A] 10-1 25 °C, 98% I F [A] 10-1 98%, 150°C 150 °C, 98% 10-2 0 0.5 1 1.5 2 10-2 0 0.5 98%, 25 °C 1 1.5 2 -V SD [V] V SD [V] 23 Avalanche characteristics (P) I AS=f(t AV); R GS=25 Ω parameter: T j(start) 10 24 Avalanche characteristics (N) I AS=f(t AV); R GS=25 Ω parameter: T j(start) 10 -I AV [A] 1 125 °C 100 °C 25 °C I AV [A] 1 125 °C 100 °C 25 °C 0.1 1 10 100 1000 0.1 1 10 100 1000 t AV [µs] t AV [µs] Rev. 2.1 page 10 2009-02-10 BSL316C 25 Typ. gate charge (P) V GS=f(Q gate); I D=-1.5 A pulsed parameter: V DD 10 26 Typ. gate charge (N) V GS=f(Q gate); I D=1.4 A pulsed parameter: V DD 10 8 -6 V -15 V -24 V 8 6V 15 V 24 V 6 6 -V GS [V] 4 V GS [V] 4 2 2 0 0 1 2 3 4 5 0 0 0.2 0.4 0.6 0.8 1 1.2 -Q gate [nC] Q gate [nC] 27 Drain-source breakdown voltage (P) V BR(DSS)=f(T j); I D=-250 µA 28 Drain-source breakdown voltage (N) V BR(DSS)=f(T j); I D=250 µA 36 36 34 34 32 32 -V BR(DSS) [V] 30 V BR(DSS) [V] -60 -20 20 60 100 140 180 30 28 28 26 26 24 24 -60 -20 20 60 100 140 180 T j [°C] T j [°C] Rev. 2.1 page 11 2009-02-10 BSL316C Package Outline: TSOP6 2.9 ±0.2 (2.25) (0.35) B 1.1 MAX. 0.1 MAX. 0.25 ±0.1 10˚ MAX. 2.5 ±0.1 1 2 3 0.35 +0.1 -0.05 0.95 1.9 0.2 M B 6x 0.15 +0.1 -0.06 0.2 M A A GPX09300 Footprint: Packaging: 0.5 4 1.9 2.9 0.2 0.95 Remark: Wave soldering possible dep. Pin 1 marking on customers process conditions HLG09283 3.15 2.7 8 1.15 CPWG5899 Dimensions in mm Rev. 2.1 page 12 1.6 ±0.1 2009-02-10 6 5 4 10˚ MAX. BSL316C Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.1 page 13 2009-02-10