BSO033N03MSG

BSO033N03MS G OptiMOS™3 M-Series Power-MOSFET Features • Optimized for 5V driver application (Notebook, VGA, POL) • Low FOMSW for High Frequency SMPS • 100% Avalanche tested • N-channel • Very low on-resistance R DS(on) @ V GS=4.5 V • Excellent gate charge x R DS(on) product (FOM) • Qualified for consumer level application • Pb-free plating; RoHS compliant • Halogen-free according to IEC61249-2-21 Product Summary V DS R DS(on),max V GS=10 V V GS=4.5 V ID 30 3.3 3.8 22 A V mΩ PG-DSO-8 Type BSO033N03MS G Package PG-DSO-8 Marking 033N03MS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions 10 secs Continuous drain current 1) ID V GS=10 V, T A=25 °C V GS=10 V, T A=90 °C V GS=4.5 V, T A=25 °C V GS=4.5 V, T A=90 °C Pulsed drain current2) Avalanche current, single pulse 3) Avalanche energy, single pulse Gate source voltage Power dissipation1) Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse I AS E AS V GS P tot T j, T stg T A=25 °C 2.5 T A=25 °C T A=25 °C I D=22 A, R GS=25 Ω 22 15 21 14.3 154 22 150 ±20 1.56 -55 ... 150 55/150/56 mJ V W °C Value steady state 17 12.1 16 11.3 A Unit Rev.1.1 page 1 2009-11-19 BSO033N03MS G Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - soldering point Thermal resistance, junction - ambient R thJS minimal footprint, t p≤10 s minimal footprint, steady state 6 cm2 cooling area1), t p≤10 s 6 cm2 cooling area1), steady state Values typ. max. Unit - - 35 K/W R thJA - - 110 - - 150 - - 50 - - 80 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=250 µA V DS=30 V, V GS=0 V, T j=25 °C V DS=30 V, V GS=0 V, T j=125 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=16 V, V DS=0 V V GS=4.5 V, I D=21 A V GS=10 V, I D=22 A Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=22 A 30 1 0.1 2 10 µA V 0.9 46 10 10 3.0 2.8 1.9 93 100 100 3.8 3.3 3.3 Ω S nA mΩ 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. See figure 3 for more detailed information See figure 13 for more detailed information 2) 3) Rev.1.1 page 2 2009-11-19 BSO033N03MS G Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics 4) Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total Gate plateau voltage Gate charge total Q gs Q g(th) Q gd Q sw Qg V plateau Qg V DD=15 V, I D=22 A, V GS=0 to 10 V V DS=0.1 V, V GS=0 to 4.5 V V DD=15 V, V GS=0 V V DD=15 V, I D=22 A, V GS=0 to 4.5 V 19 11 9.6 17 45 2.6 93 60 124 V nC nC C iss C oss Crss t d(on) tr t d(off) tf V DD=15 V, V GS=4.5 V, I D=22 A, R G=1.6 Ω V GS=0 V, V DS=15 V, f =1 MHz 7200 1900 150 27 12.8 38 14 9600 2500 ns pF Values typ. max. Unit Gate charge total, sync. FET Output charge Reverse Diode Diode continuous forward current Diode pulse current Diode forward voltage Q g(sync) Q oss - 39 51 52 68 IS I S,pulse V SD T A=25 °C V GS=0 V, I F=22 A, T j=25 °C V R=15 V, I F=I S, di F/dt =400 A/µs - 0.82 3.6 154 1 A V Reverse recovery charge 4) Q rr - - 20 nC See figure 16 for gate charge parameter definition Rev.1.1 page 3 2009-11-19 BSO033N03MS G 1 Power dissipation P tot=f(T A); t p≤10 s 2 Drain current I D=f(T A); t p≤10 s parameter: V GS 3 24 2.5 20 2 16 4.5 V P tot [W] 1.5 I D [A] 12 10 V 1 8 0.5 4 0 0 40 80 120 160 0 0 40 80 T A [°C] 120 160 T A [°C] 3 Safe operating area I D=f(V DS); T A=25 °C2); D =0 parameter: t p 103 limited by on-state resistance 4 Max. transient thermal impedance Z thJA=f(t p)2) parameter: D =t p/T 102 0.5 102 1 ms 10 µs 100 µs 1 µs 101 0.2 0.1 Z thJA [K/W] 0.05 I D [A] 101 10 ms 100 0.02 0.01 100 ms 10 s 100 10-1 single pulse 10-1 10 -1 10-2 10 0 10 1 10 2 10-6 10-5 10-4 10-3 10-2 10-1 100 101 102 V DS [V] t p [s] Rev.1.1 page 4 2009-11-19 BSO033N03MS G 5 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS 200 4.5 V 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 °C parameter: V GS 6 180 10 V 5 V 4V 2.8 V 160 3.5 V 5 3V 3.2 V 140 4 R DS(on) [mΩ ] 120 3.5 V 4V 4.5 V 5V 10 V I D [A] 3.2 V 100 80 60 40 20 0 0 1 2 3 2.8 V 3 3V 2 1 0 0 10 20 30 40 50 60 V DS [V] I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 160 8 Typ. forward transconductance g fs=f(I D); T j=25 °C 160 140 140 120 120 100 100 80 g fs [S] 150 °C 25 °C I D [A] 80 60 60 40 40 20 20 0 0 1 2 3 4 5 0 0 10 20 30 40 50 60 V GS [V] I D [A] Rev.1.1 page 5 2009-11-19 BSO033N03MS G 9 Drain-source on-state resistance R DS(on)=f(T j); I D=22 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS; I D=250 µA 6 2.5 5 2 4 R DS(on) [mΩ ] 98 % 3 typ V GS(th) [V] 100 140 180 1.5 1 2 1 0.5 0 -60 -20 20 60 0 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 104 Ciss 103 Coss 150 °C 25 °C 150 °C, 98% 10 103 2 C [pF] I F [A] 101 25 °C, 98% Crss 102 100 101 0 10 20 30 10-1 0 0.5 1 1.5 2 V DS [V] V SD [V] Rev.1.1 page 6 2009-11-19 BSO033N03MS G 13 Avalanche characteristics I AS=f(t AV); R GS=25 Ω parameter: T j(start) 100 14 Typ. gate charge V GS=f(Q gate); I D=22 A pulsed parameter: V DD 12 15 V 10 6V 25 °C 100 °C 125 °C 10 8 24 V V GS [V] 1 0.1 1 10 100 1000 I AV [A] 6 4 2 0 0 20 40 60 80 100 t AV [µs] Q gate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=1 mA 16 Gate charge waveforms 34 V GS 32 Qg 30 V BR(DSS) [V] 28 26 V g s(th) 24 22 Q g(th) Q gs -60 -20 20 60 100 140 180 Q sw Q gd Q g ate 20 T j [°C] Rev.1.1 page 7 2009-11-19 BSO033N03MS G Package Outline PG-DSO-8: Outline Footprint Dimensions in mm Rev.1.1 page 8 2009-11-19 BSO033N03MS G Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.1.1 page 9 2009-11-19