BSO200P03SH

BSO200P03S H OptiMOS™-P Power-Transistor Features • P-Channel • Enhancement mode • Logic level • 150°C operating temperature • Qualified according JEDEC for target applications • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 Product Summary V DS R DS(on),max ID -30 20 -9.1 V mΩ A PG-DSO-8 Type BSO200P03S H Package PG-DSO-8 Marking 200P3S Lead free Yes Halogen free Yes packing dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value ≤10 secs Continuous drain current ID T A=25 °C1) T A=70 °C1) Pulsed drain current Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature ESD rating Soldering temperature IEC climatic category; DIN IEC 68-1 260 55/150/56 °C I D,pulse E AS V GS P tot T j, T stg T A=25 °C1) 2.36 T A=25 °C2) I D=-9.1 A, R GS=25 Ω -9.1 -7.3 -36.4 98 ±25 1.56 mJ V W °C steady state -7.4 -5.9 A Unit -55 ... 150 Rev. 1.3 page 1 2010-02-15 BSO200P03S H Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - soldering point Thermal resistance, junction - ambient R thJS minimal footprint, t p≤10 s minimal footprint, steady state 6 cm2 cooling area1), t p≤10 s 6 cm2 cooling area1), steady state Values typ. max. Unit - - 35 K/W R thJA - - 110 - - 150 - - 53 - - 80 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D=-250µA V GS(th) V DS=V GS, I D=-100 µA V DS=-30 V, V GS=0 V, T j=25 °C V DS=-30 V, V GS=0 V, T j=125 °C Gate-source leakage current Drain-source on-state resistance Transconductance I GSS R DS(on) g fs V GS=-25 V, V DS=0 V V GS=-10 V, I D=-9.1 A |V DS|>2|I D|R DS(on)max, I D=-7.3 A -30 -1 -1.5 V Zero gate voltage drain current I DSS - -0.1 -1 µA 11 -10 16.7 18 -100 -100 20.0 S nA 1) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.3 page 2 2010-02-15 BSO200P03S H Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics 3) Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage IS I S,pulse V SD T A=25 °C V GS=0 V, I F=-9.1 A, T j=25 °C V R=15 V, I F=-9.1 A, di F/dt =100 A/µs -0.88 -2.1 -36.5 -1.2 V A Q gs Q g(th) Q gd Q sw Qg V plateau Q oss V DD=-15 V, V GS=0 V V DD=-24 V, I D=9.1 A, V GS=0 to -10 V -4.8 -2.6 -14 -16 -40 -2.7 -14 -24 -54 -19 V -6.4 -3.5 nC C iss C oss C rss t d(on) tr t d(off) tf V DD=-15 V, V GS=-10 V, I D=-1 A, R G=6 Ω V GS=0 V, V DS=-25 V, f =1 MHz 1750 470 390 10 11 42 33 2330 625 580 53 17 63 50 ns pF Values typ. max. Unit Reverse recovery time t rr - 19 24 ns Reverse recovery charge Q rr - 9 11 nC 2) 3) See figure 3 See figure 16 for gate charge parameter definition Rev. 1.3 page 3 2010-02-15 BSO200P03S H 1 Power dissipation P tot=f(T A); t p≤10 s 2 Drain current I D=f(T A); |V GS|≥10 V; t p≤10 s 3 10 2.5 8 2 6 P tot [W] 1.5 -I D [A] 4 2 0 0 40 80 120 160 0 40 80 120 160 1 0.5 0 T A [°C] T A [°C] 3 Safe operating area I D=f(V DS); T A=25 °C1); D =0 parameter: t p 102 100 4 Max. transient thermal impedance Z thJS=f(t p) parameter: D =t p/T 102 10 µs 1 µs 100 µs 0.2 100 0.5 101 10 101 limited by on-state resistance 1 ms 10 0.1 0.05 Z thJS [K/W] -I D [A] 0.02 0 1 10 0 1 10 ms 10 0.01 10-1 0.1 DC 10-1 0.1 single pulse 10-2 0.01 0.1 1 10 100 10-2 2 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 10 -1 10 0 -V DS [V] 10 1 10 10-5 10-4 10-3 t p [s] 10-2 10-1 100 101 Rev. 1.3 page 4 2010-02-15 BSO200P03S H 5 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS 40 -10 V -4.5 V 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 °C parameter: V GS 60 2.5 V -2.7 V -3 V -3.2 V -3.5 V 35 50 30 -3.5 V 40 20 R DS(on) [mΩ ] 25 -I D [A] -3.2 V 30 -4.5 V 15 -3 V 20 10 -2.7 V -10 V 10 5 -2.5 V -2.3 V 0 0 1 2 3 0 0 10 20 30 40 -V DS [V] -I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 40 8 Typ. forward transconductance g fs=f(I D); T j=25 °C 40 30 30 -I D [A] 20 g fs [S] C °150 C °25 20 10 10 0 0 1 2 3 4 0 0 10 20 30 -V GS [V] -I D [A] Rev. 1.3 page 5 2010-02-15 BSO200P03S H 9 Drain-source on-state resistance R DS(on)=f(T j); I D=-9.1 A; V GS=-10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS; I D=-100 µA 2.5 28 24 98 % 2 max. 20 R DS(on) [mΩ ] 16 typ. -V GS(th) [V] 1.5 typ. 12 1 min. 8 0.5 4 0 -60 -20 20 60 100 140 180 0 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 104 10000 100 150 °C, typ 10 Ciss 25 °C, typ 25 °C, 98% C [pF] 103 1000 Coss I F [A] Crss 1 150 °C, 98% 102 100 0.1 5 10 15 20 25 30 0 0.5 1 1.5 0 -V DS [V] -V SD [V] Rev. 1.3 page 6 2010-02-15 BSO200P03S H 13 Avalanche characteristics I AS=f(t AV); R GS=25 Ω parameter: T j(start) 10 25 °C 100 °C 125 °C 14 Typ. gate charge V GS=f(Q gate); I D=-9.1 A pulsed parameter: V DD 10 9 8 7 6 -6 V -15 V -24 V -V GS [V] 1 1 10 100 1000 -I AV [A] 5 4 3 2 1 0 0 10 20 30 40 t AV [µs] -Q gate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=-250 µA 16 Gate charge waveforms 36 V GS 34 Qg 32 30 -V BR(DSS) [V] 28 26 V g s(th) 24 22 Q g(th) Q gs -60 -20 20 60 100 140 180 Q sw Q gd Q g ate 20 T j [°C] Rev. 1.3 page 7 2010-02-15 BSO200P03S H Package Outline P-DSO-8: Outline Rev. 1.3 page 8 2010-02-15 BSO200P03S H Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.3 page 9 2010-02-15