BSO211PH

BSO211P H OptiMOS® P-Power-Transistor Features • dual P-Channel in SO8 • Qualified according JEDEC for target applications • 150°C operating temperature • Super Logic Level (2.5V rated) • Pb-free plating; RoHS compliant • Halogen-free according to IEC61249-2-21 Product Summary V DS R DS(on),max V GS=4.5 V V GS=2.5 V ID -20 67 110 4.6 A V mΩ PG-DSO-8 Type BSO211P H Package PG-DSO-8 Marking 211P Lead free Yes Halogen free Yes Packing dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions 10 secs Continuous drain current 1) ID V GS=4.5 V, T A=25 °C V GS=4.5 V, T A=70 °C V GS=2.5 V, T A=25 °C V GS=2.5 V, T A=70 °C Pulsed drain current2) Avalanche energy, single pulse Gate source voltage Power dissipation1) Operating and storage temperature ESD class Soldering temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS V GS P tot T j, T stg JESD22-A114 HBM T A=25 °C 2.0 -55 ... 150 0 (0-250V) 260 55/150/56 °C T A=25 °C I D=-4.6 A, R GS=25 Ω -4.6 -3.7 -3.6 -2.9 -18.4 28 ±12 1.6 mJ V W °C Value steady state -4.0 -3.2 -3.2 -2.5 A Unit Rev.1.3 page 1 2010-02-10 BSO211P H Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - soldering point Thermal resistance, junction - ambient R thJS minimal footprint, t p≤10 s minimal footprint, steady state 6 cm2 cooling area1), t p≤10 s 6 cm2 cooling area1), steady state Values typ. max. Unit - - 35 K/W R thJA - - 110 - - 150 - - 62.5 - - 80 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=-0.25 mA V GS(th) I DSS V DS=V GS, I D=-25 µA V DS=-20 V, V GS=0 V, T j=25 °C V DS=-20 V, V GS=0 V, T j=150 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=12 V, V DS=0 V V GS=2.5 V, I D=-3.6 A V GS=4.5 V, I D=-4.6 A Gate resistance Transconductance 1) -20 -0.6 - -0.9 - -1.2 -1 V µA - 74 54 7.6 13 -100 -100 110 67 Ω S nA mΩ RG g fs |V DS|>2|I D|R DS(on)max, I D=-4.6 A 8 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. See figure 3 for more detailed information See figure 13 for more detailed information 2) 3) Rev.1.3 page 2 2010-02-10 BSO211P H Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics 4) Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge Reverse Diode Diode continuous forward current Diode pulse current Diode forward voltage IS I S,pulse V SD T A=25 °C V GS=0 V, I F=-4.6 A, T j=25 °C V R=10 V, I F=I D, di F/dt =100 A/µs -2 -18.4 -1.4 V A Q gs Q g(th) Q gd Q sw Qg V plateau Q oss V DD=10 V, V GS=0 V V DD=10 V, I D=-4.6 A, V GS=0 to 4.5 V -1 -1 -3 -3 -8 -1.8 5 -2 -2 -4 -4 -10 6 V nC nC C iss C oss Crss t d(on) tr t d(off) tf V DD=15 V, V GS=4.5 V, I D=-4.6 A, R G=1.6 Ω V GS=0 V, V DS=15 V, f =1 MHz 730 240 200 9 13 23 27 1095 360 300 12 20 35 41 ns pF Values typ. max. Unit Reverse recovery charge 4) Q rr - 8 12 nC See figure 16 for gate charge parameter definition Rev.1.3 page 3 2010-02-10 BSO211P H 1 Power dissipation P tot=f(T A); t p≤10 s 2 Drain current I D=f(T A); t p≤10 s parameter: V GS 3 5 2.5 4 2 4.5 V P tot [W] 1.5 I D [A] 0 40 80 120 160 3 1 2 0.5 1 0 0 0 40 80 T A [°C] 120 160 T A [°C] 3 Safe operating area I D=f(V DS); T A=25 °C2); D =0 parameter: t p 102 4 Max. transient thermal impedance Z thJA=f(t p)2) parameter: D =t p/T 102 0.5 0.2 10 µs 100 µs 101 0.1 0.05 0.02 101 1 ms Z thJA [K/W] I D [A] 0.01 100 single pulse 10 ms 100 limited by on-state resistance DC 100 ms 10-1 10-1 10 -1 10 s 10-2 10 1 10 0 10 2 10-6 10-5 10-4 10-3 10-2 10-1 100 101 102 V DS [V] t p [s] Rev.1.3 page 4 2010-02-10 BSO211P H 5 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS 40 4.5 V 3.5 V 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 °C parameter: V GS 100 90 2.5 V 35 4V 80 30 3V 70 3.0 V 3.5 V 4.0 V 4.5 V 5V 10 V 20 2.5 V R DS(on) [mΩ ] 25 60 50 40 30 I D [A] 15 5V 10 2V 20 10 0 10 V 5 0 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 V DS [V] I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 20 18 16 14 150 °C 8 Typ. forward transconductance g fs=f(I D); T j=25 °C 24 22 20 18 16 14 12 I D [A] 10 8 6 4 2 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 g fs [S] 25 °C 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 V GS [V] I D [A] Rev.1.3 page 5 2010-02-10 BSO211P H 9 Drain-source on-state resistance R DS(on)=f(T j); I D=-4.6 A; V GS=-4.5 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS; I D=-25 µA 100 1.6 90 1.4 80 98 % 1.2 R DS(on) [mΩ ] 1 V GS(th) [V] typ 70 0.8 60 0.6 50 0.4 40 0.2 30 -60 -20 20 60 100 140 0 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 103 102 Ciss 101 C [pF] I F [A] 150 °C 150°C 98% Coss 100 Crss 25 °C 25 °C 98% 102 0 10 20 30 10-1 0 0.5 1 1.5 2 V DS [V] V SD [V] Rev.1.3 page 6 2010-02-10 BSO211P H 13 Avalanche characteristics I AS=f(t AV); R GS=25 Ω parameter: T j(start) 10 1 14 Typ. gate charge V GS=f(Q gate); I D=-4.6 A pulsed parameter: V DD 10 9 25 °C 100 °C 8 7 6 4V 10 V 16 V 125 °C V GS [V] 100 5 4 3 2 1 0 I AV [A] 10 -1 0 101 4 8 12 16 100 t AV [µs] 102 103 Q gate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=1 mA 16 Gate charge waveforms 23 V GS 22.5 22 21.5 Qg V BR(DSS) [V] 21 20.5 20 19.5 19 V g s(th) Q g(th) 18.5 18 -60 -20 20 60 100 140 180 Q sw Q gs Q gd Q g ate T j [°C] Rev.1.3 page 7 2010-02-10 BSO211P H Package Outline PG-DSO-8: Outline Footprint Dimensions in mm Rev.1.3 page 8 2010-02-10 BSO211P H Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.1.3 page 9 2010-02-10