BSO220N03MDG

BSO220N03MD G OptiMOS™3 M-Series Power-MOSFET Features • Dual N-channel • Optimized for 5V driver application (Notebook, VGA, POL) • Low FOMSW for High Frequency SMPS • 100% Avalanche tested • Very low on-resistance R DS(on) @ V GS=4.5 V • Excellent gate charge x R DS(on) product (FOM) • Qualified for consumer level application • Pb-free plating; RoHS compliant • Halogen-free according to IEC61249-2-21 Product Summary V DS R DS(on),max V GS=10 V V GS=4.5 V ID 30 22 27 7.7 A V mΩ PG-DSO-8 Type BSO220N03MD G Package PG-DSO-8 Marking 220N03MD Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions 10 secs Continuous drain current 1) ID V GS=10 V, T A=25 °C V GS=10 V, T A=90 °C V GS=4.5 V, T A=25 °C V GS=4.5 V, T A=90 °C Pulsed drain current2) Avalanche current, single pulse 3) Avalanche energy, single pulse Gate source voltage Power dissipation1) Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse I AS E AS V GS P tot T j, T stg T A=25 °C 2 -55 ... 150 55/150/56 T A=25 °C T A=25 °C I D=7.7 A, R GS=25 Ω 7.7 5.3 6.9 4.8 54 7.7 9 ±20 1.4 mJ V W °C Value steady state 6 4.4 5.8 4 A Unit Rev.1.1 page 1 2009-11-19 BSO220N03MD G Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - soldering point Thermal resistance, junction - ambient R thJS minimal footprint, t p≤10 s minimal footprint, steady state 6 cm2 cooling area1), t p≤10 s 6 cm2 cooling area1), steady state Values typ. max. Unit - - 50 K/W R thJA - - 110 - - 150 - - 62.5 - - 90 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=250 µA V DS=30 V, V GS=0 V, T j=25 °C V DS=30 V, V GS=0 V, T j=125 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=16 V, V DS=0 V V GS=4.5 V, I D=6.9 A V GS=10 V, I D=7.7 A Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=7.7 A 30 1 0.1 2.1 10 µA V 0.6 9 10 10 21.6 18.3 1.3 18 100 100 27 22 2.3 Ω S nA mΩ 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. One transistor active. See figure 3 for more detailed information See figure 13 for more detailed information 2) 3) Rev.1.1 page 2 2009-11-19 BSO220N03MD G Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics 4) Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total Gate plateau voltage Gate charge total Q gs Q g(th) Q gd Q sw Qg V plateau Qg V DD=15 V, I D=7.7 A, V GS=0 to 10 V V DS=0.1 V, V GS=0 to 4.5 V V DD=15 V, V GS=0 V V DD=15 V, I D=7.7 A, V GS=0 to 4.5 V 1.8 1.0 0.9 1.7 3.8 3.0 7.8 5 10 V nC nC C iss C oss Crss t d(on) tr t d(off) tf V DD=15 V, V GS=4.5 V, I D=7.7 A, R G=1.6 Ω V GS=0 V, V DS=15 V, f =1 MHz 600 230 12 5.7 2.8 6.4 3.4 800 310 ns pF Values typ. max. Unit Gate charge total, sync. FET Output charge Reverse Diode Diode continuous forward current Diode pulse current Diode forward voltage Q g(sync) Q oss - 3.3 6.1 4.4 8.1 IS I S,pulse V SD T A=25 °C V GS=0 V, I F=7.7 A, T j=25 °C V R=15 V, I F=I S, di F/dt =400 A/µs - 0.88 2.4 54 1.1 A V Reverse recovery charge 4) Q rr - - 10 nC See figure 16 for gate charge parameter definition Rev.1.1 page 3 2009-11-19 BSO220N03MD G 1 Power dissipation P tot=f(T A); t p≤10 s 2 Drain current I D=f(T A); t p≤10 s parameter: V GS 2.5 8 2 6 1.5 4.5 V P tot [W] I D [A] 4 10 V 1 2 0.5 0 0 40 80 120 160 0 0 40 80 120 160 T A [°C] T A [°C] 3 Safe operating area I D=f(V DS); T A=25 °C2); D =0 parameter: t p 102 limited by on-state resistance 10 µs 1 µs 4 Max. transient thermal impedance Z thJA=f(t p)2) parameter: D =t p/T 102 0.5 101 100 µs 0.2 0.1 0.05 1 ms 101 Z thJA [K/W] I D [A] 0.02 0.01 single pulse 100 10 ms 100 ms 10 s 10 10 -1 0 10-2 10 -1 10-1 10 0 10 1 10 2 10-6 10-5 10-4 10-3 10-2 10-1 100 101 102 V DS [V] t p [s] Rev.1.1 page 4 2009-11-19 BSO220N03MD G 5 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS 60 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 °C parameter: V GS 60 50 10 V 5V 4.5 V 50 2.8 V 3V 3.2 V 40 40 I D [A] 4V 30 R DS(on) [mΩ ] 3.5 V 30 4V 5V 10 V 4.5 V 20 3.5 V 20 10 3.2 V 3V 2.8 V 10 0 0 1 2 3 0 0 5 10 15 20 25 30 V DS [V] I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 60 8 Typ. forward transconductance g fs=f(I D); T j=25 °C 35 50 30 25 40 20 30 g fs [S] 150 °C 25 °C I D [A] 15 20 10 10 5 0 0 1 2 3 4 5 0 0 5 10 15 20 25 30 V GS [V] I D [A] Rev.1.1 page 5 2009-11-19 BSO220N03MD G 9 Drain-source on-state resistance R DS(on)=f(T j); I D=7.7 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS; I D=250 µA 40 2.5 35 2 30 R DS(on) [mΩ ] 25 98 % 20 typ V GS(th) [V] 100 140 180 1.5 15 1 10 0.5 5 0 -60 -20 20 60 0 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 103 Ciss Coss 102 25 °C 150 °C, 98% 102 101 150 °C C [pF] I F [A] 25 °C, 98% Crss 10 1 100 100 0 10 20 30 10-1 0 0.5 1 1.5 2 V DS [V] V SD [V] Rev.1.1 page 6 2009-11-19 BSO220N03MD G 13 Avalanche characteristics I AS=f(t AV); R GS=25 Ω parameter: T j(start) 10 14 Typ. gate charge V GS=f(Q gate); I D=7.7 A pulsed parameter: V DD 12 15 V 10 6V 100 °C 25 °C 24 V 8 1 V GS [V] 100 1000 125 °C I AV [A] 6 4 2 0.1 1 10 0 0 2 4 6 8 10 t AV [µs] Q gate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=1 mA 16 Gate charge waveforms 34 V GS 32 Qg 30 V BR(DSS) [V] 28 26 V g s(th) 24 22 Q g(th) Q gs -60 -20 20 60 100 140 180 Q sw Q gd Q g ate 20 T j [°C] Rev.1.1 page 7 2009-11-19 BSO220N03MD G Package Outline PG-DSO-8: Outline Footprint Dimensions in mm Rev.1.1 page 8 2009-11-19 BSO220N03MD G Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.1.1 page 9 2009-11-19