BSO301SPH

BSO301SP H OptiMOS®-P Power-Transistor Features • P-Channel • Enhancement mode • Logic level • 150°C operating temperature • Avalanche rated • Qualified according JEDEC for target applications • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 Product Summary V DS R DS(on),max VGS= 10 V VGS= 4.5 V ID -30 8.0 12.0 -14.9 PG-DSO-8 V mΩ A A Type BSO301SP H Package PG-DSO-8 Marking 301SP Leadfree Yes Halogen free Yes packing dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value ≤10 secs Continuous drain current ID T A=25 °C1) T A=70 °C1) Pulsed drain current Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature ESD class Soldering temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS V GS P tot T j, T stg JESD22-A114 HBM T A=25 °C1) 2.5 T A=25 °C2) I D=-14.9 A, R GS=25 Ω -14.9 -11.9 -60 248 ±20 1.79 -55 ... 150 1C (1kV - 2kV) 260 55/150/56 °C mJ V W °C steady state -12.6 -10 A Unit Rev. 1.32 page 1 2010-05-12 BSO301SP H Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - soldering point Thermal resistance, junction - ambient R thJS minimal footprint, t p≤10 s minimal footprint, steady state 6 cm2 cooling area1), t p≤10 s 6 cm2 cooling area1), steady state Values typ. max. Unit - - 35 K/W R thJA - - 110 - - 150 - - 50 - - 80 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D=-250µA V GS(th) V DS=V GS, I D=-250 µA V DS=-30 V, V GS=0 V, T j=25 °C V DS=-30 V, V GS=0 V, T j=125 °C Gate-source leakage current Drain-source on-state resistance Drain-source on-state resistance I GSS R DS(on) R DS(on) V GS=-20 V, V DS=0 V V GS=-4.5 V, I D=-12 A V GS=-10 V, I D=-14.9 A |V DS|>2|I D|R DS(on)max, I D=-14.9 A -30 -1 -1.5 -2 V Zero gate voltage drain current I DSS - -0.1 -1 µA - -10 -10 8.8 6.3 -100 -100 12 8.0 nA mΩ Transconductance g fs 22 44 - S 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 1) Rev. 1.32 page 2 2010-05-12 BSO301SP H Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics 3) Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage IS I S,pulse V SD T A=25 °C V GS=0 V, I F=-14.9 A, T j=25 °C V R=15 V, I F=-14.9A, di F/dt =100 A/µs -0.82 -2.1 -60 -1.2 V A Q gs Q g(th) Q gd Q sw Qg V plateau Q oss V DD=-15 V, V GS=0 V V DD=-24 V, I D=-14.9 A, V GS=0 to -10 V -11 -7.1 -35 -40 -102 -2.5 -36 -59 -136 -48 V -15 -9.5 nC C iss C oss C rss t d(on) tr t d(off) tf V DD=-15 V, V GS=-10 V, I D=-1 A, R G=6 Ω V GS=0 V, V DS=-25 V, f =1 MHz 4430 1180 970 15 22 130 110 5890 1570 1500 23 33 195 165 ns pF Values typ. max. Unit Reverse recovery time t rr - 32 40 ns Reverse recovery charge 2) 3) Q rr - -20 -25 nC See figure 3 See figure 16 for gate charge parameter definition Rev. 1.32 page 3 2010-05-12 BSO301SP H 1 Power dissipation P tot=f(T A); t p≤10 s 2 Drain current I D=f(T A); |V GS|≥10 V; t p≤10 s 3 16 2.5 12 2 P tot [W] 1.5 -I D [A] 0 40 80 120 160 8 1 4 0.5 0 0 0 40 80 120 160 T A [°C] T A [°C] 3 Safe operating area I D=f(V DS); T A=25 °C1); D =0 parameter: t p 102 100 4 Max. transient thermal impedance Z thJS=f(t p) parameter: D =t p/T 102 10 µs 1 µs 100 µs 0.5 100 1 ms 101 10 limited by on-state resistance 101 0.2 10 0.1 0.05 Z thJS [K/W] 10 ms -I D [A] 0.02 100 1 100 1 0.01 10-1 0.1 DC 10-1 0.1 single pulse 10-2 0.01 0.1 1 10 100 10-2 2 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 10 -1 10 0 -V DS [V] 10 1 10 10-5 10-4 10-3 t p [s] 10-2 10-1 100 101 Rev. 1.32 page 4 2010-05-12 BSO301SP H 5 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS 60 -10 V -4.5 V -3.5 V 2.5 -3.2 V 2.7 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 °C parameter: V GS 25 3.0 50 20 3.2 40 R DS(on) [mΩ ] -3 V 15 3.5 -I D [A] 30 10 4.5 20 -2.7 V 10 10 -2.5 V 5 -2.3 V 0 0 1 2 3 0 0 10 20 30 40 -V DS [V] -I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 60 8 Typ. forward transconductance g fs=f(I D); T j=25 °C 60 50 40 40 -I D [A] 30 20 g fs [S] 20 C °150 C °25 10 0 0 1 2 3 4 0 0 10 20 30 -V GS [V] -I D [A] Rev. 1.32 page 5 2010-05-12 BSO301SP H 9 Drain-source on-state resistance R DS(on)=f(T j); I D=-14.9 A; V GS=-10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS; I D=-250 µA 12 2.5 10 98 % 2 max. 8 R DS(on) [mΩ ] typ. 6 -V GS(th) [V] 1.5 typ. 1 min. 4 2 0.5 0 -60 -20 20 60 100 140 180 0 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 104 10000 100 Ciss 25 °C, typ 150 °C, typ Coss 10 25 °C, 98% C [pF] I F [A] 103 1000 Crss 150 °C, 98% 1 102 100 0.1 5 10 15 20 25 30 0 0.5 1 1.5 0 -V DS [V] -V SD [V] Rev. 1.32 page 6 2010-05-12 BSO301SP H 13 Avalanche characteristics I AS=f(t AV); R GS=25 Ω parameter: T j(start) 100 14 Typ. gate charge V GS=f(Q gate); I D=-14.9 A pulsed parameter: V DD 10 9 8 7 C °25 6 15 24 6 10 C °100 C °125 -V GS [V] 1000 -I AV [A] 5 4 3 2 1 1 1 10 100 0 0 20 40 60 80 100 120 t AV [µs] -Q gate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=-250 µA 16 Gate charge waveforms 36 V GS 34 Qg 32 30 -V BR(DSS) [V] 28 26 V g s(th) 24 22 Q g(th) Q gs -60 -20 20 60 100 140 180 Q sw Q gd Q g ate 20 T j [°C] Rev. 1.32 page 7 2010-05-12 BSO301SP H Package Outline P-DSO-8: Outline Rev. 1.32 page 8 2010-05-12 BSO301SP H Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.32 page 9 2010-05-12