BSO303

Preliminary data BSO303SP OptiMOS-P Small-Signal-Transistor Feature • P-Channel • Enhancement mode • Logic Level • 150°C operating temperature • Avalanche rated • dv/dt rated S S S G 1 2 3 4 Top View Product Summary VDS RDS(on) ID -30 21 -8.9 V mΩ A 8 7 6 5 D D D D SIS00062 Type BSO303SP Package SO 8 Ordering Code Q67042-S4129 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TA=25°C TA=70°C Symbol ID Value -8.9 -7.1 Unit A Pulsed drain current TA=25°C ID puls EAS dv/dt VGS Ptot Tj , Tstg -35.6 97 -6 ±20 2.35 -55... +150 55/150/56 mJ kV/µs V W °C Avalanche energy, single pulse ID =-8.9 A , VDD =-25V, RGS =25Ω Reverse diode dv/dt IS =-8.9A, VDS =-24V, di/dt=200A/µs, Tjmax =150°C Gate source voltage Power dissipation TA=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2002-01-08 Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point SMD version, device on PCB: @ min footprint, t < 10s @ 6 cm 2 cooling area 1) BSO303SP Symbol min. RthJS RthJA - Values typ. max. 35 110 53 Unit K/W Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS =0, ID=-250µA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) -30 -1 Values typ. -1.5 max. -2 Unit V Gate threshold voltage, VGS = VDS ID =-100µA Zero gate voltage drain current VDS =-30V, VGS =0, Tj =25°C VDS =-30V, VGS =0, Tj =150°C µA -0.1 -10 -10 24 15 -1 -100 -100 31 21 nA mΩ Gate-source leakage current VGS =-20V, VDS =0 Drain-source on-state resistance VGS =-4.5V, ID =-7.3A Drain-source on-state resistance VGS =-10V, ID =-8.9A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air; t ≤10 sec. Page 2 2002-01-08 Preliminary data Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time gfs Ciss Coss Crss td(on) tr td(off) tf VDD =-15V, VGS =-10V, ID =-1A, RG=6Ω çVDS ç≥2*çIDç*RDS(on)max ID =-7.1A VGS =0, VDS =-25V, f=1MHz BSO303SP Symbol Conditions min. 12 - Values typ. 24 1754 465 389 10.3 12.5 53 40.3 max. 15.5 19 80 60.5 Unit S pF ns Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr VGS =0, |IF | = |ID | VR =-15V, |IF | = |lD |, diF /dt=100A/µs Qgs Qgd Qg VDD =-24V, ID =-8.9A - -4.1 -15.8 -46 -2.4 -6.2 -26 -69 - nC VDD =-24V, ID =-8.9A, VGS =0 to -10V V(plateau) VDD =-24V, ID =-8.9A V IS ISM TA=25°C - -0.87 25 11.7 -3.5 -35.6 A -1.09 V 37 17.6 ns nC Page 3 2002-01-08 Preliminary data 1 Power dissipation Ptot = f (TA ) 2.6 BSO303SP BSO303SP 2 Drain current ID = f (TA ) parameter: |VGS |≥ 10 V -10 BSO303SP W 2.2 2 1.8 A -8 -7 Ptot 1.6 1.4 ID 20 40 60 80 100 120 -6 -5 1.2 1 0.8 0.6 0.4 0.2 0 0 -1 0 0 -4 -3 -2 °C 160 20 40 60 80 100 120 °C 160 TA TA 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TA = 25 °C -10 2 BSO303SP 4 Transient thermal impedance ZthJS = f (tp ) parameter : D = tp /T 10 2 BSO303SP /I D = RD S( o n) A V DS K/W tp = 76.0 µs 100 µs 10 1 1 ms -10 1 Z thJS 10 0 ID 10 ms -10 0 10 -1 D = 0.50 0.20 10 -2 0.10 0.05 -10 -1 DC 10 -3 single pulse -10 -2 -1 -10 10 -4 -7 10 0.02 0.01 -10 0 -10 1 V -10 2 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS Page 4 tp 2002-01-08 Preliminary data 5 Typ. output characteristic ID = f (VDS ); Tj=25°C parameter: tp = 80 µs 30 BSO303SP 6 Typ. drain-source on resistance RDS(on) = f (ID ) parameter: VGS 0.1 Ω Vgs = - 3.5V A Vgs= - 4V Vgs= - 4.5V Vgs= - 5V Vgs= - 6V Vgs= - 10V Vgs= -3V Vgs= - 3.5V Vgs = - 3V - ID 20 Vgs = - 4V Vgs = - 4.5V 0.08 Vgs= - 5V Vgs = - 5.5V 0.07 Vgs = - 6V Vgs = - 8V 0.06 Vgs = - 10V 0.05 0.04 15 10 RDS(on) Vgs= -2.5V 0.03 0.02 5 0.01 0 0 0 0 1 2 3 4 5 6 V 7.5 - V DS 2 4 6 8 10 12 14 16 A 20 - ID 7 Typ. transfer characteristics ID= f ( VGS ); |VDS |≥ 2 x |ID| x RDS(on)max parameter: tp = 80 µs 40 8 Typ. forward transconductance gfs = f(ID); Tj=25°C parameter: tp = 80 µs 40 A S 30 30 - ID 25 g fs 0.5 1 1.5 2 2.5 3 4 V - V GS 25 20 20 15 15 10 10 5 5 0 0 0 0 5 10 15 20 25 30 40 A - ID Page 5 2002-01-08 Preliminary data 9 Drain-source on-resistance RDS(on) = f(Tj ) parameter: ID = -8.9 A, VGS = -10 V 30 BSO303SP 10 Typ. gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS 2.5 mΩ max RDS(on) 25 98% typ 22.5 1.5 20 typ. 17.5 1 min 15 0.5 12.5 10 -60 -20 20 60 100 °C 160 0 -60 -20 20 60 100 160 Tj 11 Typ. capacitances C = f (VDS) parameter: VGS =0, f=1 MHz 10 4 12 Forward character. of reverse diode IF = f (VSD) parameter: Tj , tp = 80 µs -10 2 BSO303SP A pF Ciss -10 1 C 10 3 Coss -10 0 IF Tj = 25 °C typ Crss Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 2 0 5 10 15 20 V 30 -10 -1 0 -0.4 -0.8 -1.2 -1.6 -2 -2.4 V -3 - V DS VSD Page 6 2002-01-08 Preliminary data 13 Typ. avalanche energy EAS = f (Tj ), par.: ID = -8.9 A VDD = -25 V, RGS = 25 Ω 100 BSO303SP 14 Typ. gate charge VGS = f (QGate ) parameter: ID = -8.9 A pulsed -16 V BSO303SP mJ 80 -12 E AS VGS 70 60 50 40 30 -10 -8 0.2 VDS max 0.5 VDS max -6 0.8 VDS max -4 20 10 0 25 -2 50 75 100 °C Tj 150 0 0 10 20 30 40 50 nC 70 |QGate | 15 Drain-source breakdown voltage V(BR)DSS = f (Tj ) -36 BSO303SP V V (BR)DSS -34 -33 -32 -31 -30 -29 -28 -27 -60 -20 20 60 100 °C 180 Tj Page 7 2002-01-08 Preliminary data Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. BSO303SP Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 8 2002-01-08