BSO303SPH

BSO303SP H OptiMOS®-P Power-Transistor Features • single P-Channel in SO8 • Enhancement mode • Logic level • 150°C operating temperature • Qualified according JEDEC for traget applications • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 Product Summary V DS R DS(on),max VGS=-4.5 V VGS=-2.5 V ID PG-DSO-8 -30 21 31 -9.1 V mΩ mΩ A Type BSO303SP H Package PG-DSO-8 Marking 303SP Lead free Yes Halogen free Yes packing dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value ≤10 secs Continuous drain current 1) ID T A=25 °C T A=70 °C T A=25 °C T A=70 °C Pulsed drain current2) Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature ESD class Soldering temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS V GS P tot T j, T stg JESD22-A114 HBM T A=25 °C1) 2.50 T A=25 °C2) I D= -9.1 A, R GS=25 Ω -9.1 -7.1 -8.9 -7.1 -36 97 ±20 1.56 mJ V W °C steady state -7.2 -5.8 -7.2 -5.8 A A Unit -55 ... 150 1B (500V - 1 kV) 260 55/150/56 °C Rev. 1.1 page 1 2010-05-12 BSO303SP H Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - soldering point Thermal resistance, junction - ambient R thJS minimal footprint, t p≤10 s minimal footprint, steady state 6 cm2 cooling area1), t p≤10 s 6 cm2 cooling area1), steady state Values typ. max. Unit - - 35 K/W R thJA - - 110 - - 150 - - 50 - - 80 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D=-250µA V GS(th) V DS=V GS, I D=-100 µA V DS=-30 V, V GS=0 V, T j=25 °C V DS=-30 V, V GS=0 V, T j=150 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=-20 V, V DS=0 V V GS=-4.5 V, I D=-7.8 A V GS=-10 V, I D=-9.1 A |V DS|>2|I D|R DS(on)max, I D=-7.3 A -30 -1 -1.5 -2 V Zero gate voltage drain current I DSS - -0.1 -1 µA - -10 22 -100 -100 31 nA mΩ Drain-source on-state resistance R DS(on) - 15 21 Transconductance g fs 12 19 - S 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 1) Rev. 1.1 page 2 2010-05-12 BSO303SP H Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics 3) Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage IS I S,pulse V SD T A=25 °C V GS=0 V, I F=-9.1 A, T j=25 °C V R=15 V, I F=-9.1 A, di F/dt =100 A/µs -0.88 -2.1 -36.5 -1.2 V A Q gs Q g(th) Q gd Q sw Qg V plateau Q oss V DD=-15 V, V GS=0 V V DD=-24 V, I D=9.1 A, V GS=0 to -10 V -4.8 -2.6 -14 -16 -40 -2.7 -14 -6.4 -3.5 -21 -24 -54 -19 V nC C iss C oss C rss t d(on) tr t d(off) tf V DD=-15 V, V GS=-10 V, I D=-1 A, R G=6 Ω V GS=0 V, V DS=-25 V, f =1 MHz 1750 470 390 10 11 42 33 2330 625 580 15 17 63 50 ns pF Values typ. max. Unit Reverse recovery time t rr - 19 24 ns Reverse recovery charge 2) 3) Q rr - 9 11 nC See figure 3 See figure 16 for gate charge parameter definition Rev. 1.1 page 3 2010-05-12 BSO303SP H 1 Power dissipation P tot=f(T A); t p≤10 s 2 Drain current I D=f(T A); |V GS|≥10 V; t p≤10 s 3 10 2.5 8 2 6 P tot [W] 1.5 -I D [A] 4 2 0 0 40 80 120 160 0 40 80 120 160 1 0.5 0 T A [°C] T A [°C] 3 Safe operating area I D=f(V DS); T A=25 °C1); D =0 parameter: t p 102 100 4 Max. transient thermal impedance Z thJS=f(t p) parameter: D =t p/T 102 10 µs 1 µs 100 µs 100 0.5 101 10 101 limited by on-state resistance 1 ms 0.2 10 0.1 0.05 Z thJS [K/W] -I D [A] 0.02 100 1 10 ms 100 1 0.01 10-1 0.1 DC 10-1 0.1 single pulse 10-2 0.01 0.1 1 10 100 10-2 2 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 10 -1 10 0 -V DS [V] 10 1 10 10-5 10-4 10-3 t p [s] 10-2 10-1 100 101 Rev. 1.1 page 4 2010-05-12 BSO303SP H 5 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS 40 -10 V -4.5 V 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 °C parameter: V GS 60 2.5 V -2.7 V -3 V -3.2 V -3.5 V 35 50 -3.5 V 30 40 R DS(on) [mΩ] 25 -I D [A] 20 -3.2 V 30 -4.5 V 15 -3 V 20 -10 V 10 -2.7 V 10 5 -2.5 V -2.3 V 0 0 1 2 3 0 0 10 20 30 40 -V DS [V] -I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 40 8 Typ. forward transconductance g fs=f(I D); T j=25 °C 40 30 30 20 g fs [S] C °150 C °25 -I D [A] 20 10 10 0 0 1 2 3 4 0 0 10 20 30 -V GS [V] -I D [A] Rev. 1.1 page 5 2010-05-12 BSO303SP H 9 Drain-source on-state resistance R DS(on)=f(T j); I D=-9.1 A; V GS=-10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS; I D=-100 µA 2.5 28 98 % 24 2 max. 20 R DS(on) [mΩ ] 16 -V GS(th) [V] 1.5 typ. 12 typ. 1 min. 8 0.5 4 0 -60 -20 20 60 100 140 180 0 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 104 10000 100 25 °C, 98% 25 °C, typ Ciss 10 150 °C, typ C [pF] 103 1000 I F [A] 150 °C, 98% Coss Crss 1 102 100 0.1 5 10 15 20 25 30 0 0.5 1 1.5 2 0 -V DS [V] -V SD [V] Rev. 1.1 page 6 2010-05-12 BSO303SP H 13 Avalanche characteristics I AS=f(t AV); R GS=25 Ω parameter: T j(start) 10 25 100 125 14 Typ. gate charge V GS=f(Q gate); I D=-9.1 A pulsed parameter: V DD 10 9 6 8 7 6 15 24 -V GS [V] 1 1 10 100 1000 -I AV [A] 5 4 3 2 1 0 0 10 20 30 40 t AV [µs] -Q gate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=-250 µA 16 Gate charge waveforms 36 V GS 34 Qg 32 30 -V BR(DSS) [V] 28 26 V g s(th) 24 22 Q g(th) Q gs -60 -20 20 60 100 140 180 Q sw Q gd Q g ate 20 T j [°C] Rev. 1.1 page 7 2010-05-12 BSO303SP H Package Outline P-DSO-8: Outline Rev. 1.1 page 8 2010-05-12 BSO303SP H Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.1 page 9 2010-05-12