BSO307N

Preliminary Data SIPMOS  Small-Signal-Transistor Features • Dual N channel • BSO 307N Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS RDS(on) ID 30 0.05 5 V Ω A Enhancement mode • Avalanche rated • Logic Level • dv/dt rated Type BSO 307 N Parameter Continuous drain current, one channel active Package SO 8 Symbol Ordering Code Q67000-S4012 Value 5 20 55 5 0.2 6 mJ A mJ kV/µs Unit A Maximum Ratings, at T j = 25 ˚C, unless otherwise specified ID IDpulse EAS IAR EAR dv/dt T A = 25 ˚C Pulsed drain current, one channel active T A = 25 ˚C Avalanche energy, single pulse I D = 5 A, VDD = 25 V, R GS = 25 Ω Avalanche current,periodic limited by T jmax Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt I S = 5 A, V DS = 24 V, di/dt = 200 A/µs, T jmax = 150 ˚C Gate source voltage Power dissipation, one channel active VGS Ptot Tj Tstg ±20 2 -55...+150 -55 ... +150 55/150/56 V W ˚C T A = 25 ˚C Operating temperature Storage temperature IEC climatic category; DIN IEC 68-1 Data Sheet 1 05.99 BSO 307N Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point Thermal resistance @ 10 sec., min. footprint Thermal resistance @ 10 sec., 6 cm2 cooling area 1) Symbol min. Values typ. max. 35 100 62.5 K/W Unit RthJS Rth(JA) Rth(JA) - Electrical Characteristics, at T j = 25 ˚C, unless otherwise specified Parameter Static Characteristics Drain- source breakdown voltage Symbol min. Values typ. 1.6 max. 2 µA 0.1 10 10 1 100 100 nA Ω 0.05 0.035 0.075 0.05 V Unit V(BR)DSS VGS(th) IDSS 30 1.2 VGS = 0 V, I D = 0.25 mA, T j = 25 ˚C Gate threshold voltage, VGS = VDS I D = 20 µA Zero gate voltage drain current VDS = 30 V, V GS = 0 V, T j = 25 ˚C VDS = 30 V, V GS = 0 V, T j = 150 ˚C Gate-source leakage current IGSS RDS(on) VGS = 20 V, VDS = 0 V Drain-Source on-state resistance VGS = 4.5 V, I D = 4.1 A VGS = 10 V, I D = 5 A 1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air. Data Sheet 2 05.99 BSO 307N Electrical Characteristics Parameter Characteristics Transconductance Symbol min. Values typ. 6 400 160 70 22 max. 500 200 90 33 ns S pF Unit gfs Ciss Coss Crss td(on) 2 - VDS≥2*I D*RDS(on)max , ID = 4.1 A Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time VDD = 15 V, V GS = 4.5 V, ID = 4.1 A, RG = 16 Ω Rise time tr - 22 33 ns VDD = 15 V, V GS = 4.5 V, ID = 4.1 A, RG = 16 Ω Turn-off delay time td(off) - 22 33 ns VDD = 15 V, V GS = 4.5 V, ID = 4.1 A, RG = 16 Ω Fall time tf - 25 38 ns VDD = 15 V, V GS = 4.5 V, ID = 4.1 A, RG = 16 Ω Data Sheet 3 05.99 BSO 307N Electrical Characteristics, at Tj = 25 ˚C, unless otherwise specified Parameter at Tj = 25 ˚C, unless otherwise specified Dynamic Characteristics Gate charge at threshold Symbol min. Values typ. 0.4 8 13 3.2 max. 0.6 12 20 nC V nC Unit QG(th) Qg(5) Qg V(plateau) - VDD = 15 V, ID = 0.1 A, VGS = 0 to 1 V Gate charge at Vgs=5V VDD = 15 V, ID = 4.1 A, VGS = 0 to 5 V Gate charge total VDD = 15 V, ID = 4.1 A, VGS = 0 to 10 V Gate plateau voltage VDD = 15 V, ID = 4.1 A Reverse Diode Inverse diode continuous forward current IS I SM VSD t rr Q rr - 0.85 25 20 5 20 1.4 38 30 A TA = 25 ˚C Inverse diode direct current,pulsed TA = 25 ˚C Inverse diode forward voltage V ns µC VGS = 0 V, I F = 10 A Reverse recovery time VR = 15 V, IF=IS , diF/dt = 100 A/µs Reverse recovery charge VR = 15 V, IF=l S , diF/dt = 100 A/µs Data Sheet 4 05.99 BSO 307N Power dissipation Drain current Ptot= f (TA) BSO 307 N ID = f (TA ) BSO 307 N 2.4 W 5.5 A 2.0 1.8 4.5 4.0 3.5 3.0 2.5 2.0 Ptot 1.6 1.4 1.2 1.0 0.8 ID 0.6 0.4 0.2 0.0 0 20 40 60 80 100 120 ˚C 1.5 1.0 0.5 0.0 0 20 40 60 80 100 120 ˚C 160 160 TA TA Safe operating area Transient thermal impedance ID = f ( V DS ) parameter : D = 0 , TA = 25 ˚C 10 A 2 BSO 307 N ZthJA = f(tp ) parameter : D= tp/T 10 2 /ID = BSO 307 N V DS tp = 6.0 µs 10 µs K/W 10 1 RD S( on ) 1 ms 10 0 10 ms Z thJA 100 µs 10 1 ID D = 0.50 0.20 10 0 0.10 single pulse 0.05 0.02 0.01 10 -1 DC 10 -2 -1 10 10 0 10 1 V 10 2 10 -1 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 s 10 4 VDS tp Data Sheet 5 05.99 BSO 307N Typ. output characteristics Drain-source on-resistance I D = f (VDS) parameter: tp = 80 µs BSO 307 N RDS(on) = f (Tj) parameter : I D = 4.1 A, VGS = 4.5 V BSO 307 N 12 A Ptot = 2W l k if h jge d VGS [V] a 2.5 b c 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 8.0 10.0 0.18 Ω 0.14 10 9 8 RDS(on) d e 0.12 0.10 ID 7 c f g h 6 5 4 3 2 1 b 98% 0.08 0.06 0.04 0.02 i j k l typ 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 a V 5.0 0.00 -60 -20 20 60 100 ˚C 180 VDS Tj Typ. capacitances C = f (VDS) parameter: V GS = 0 V, f = 1 MHz 10 3 pF Ciss C Coss 10 2 Crss 10 1 0 5 10 15 20 25 30 V VDS 40 Data Sheet 6 05.99 BSO 307N Typ. transfer characteristics I D= f (VGS) parameter: tp = 80 µs VDS ≥ 2 x I D x RDS(on) max 12 A Gate threshold voltage VGS(th) = f (Tj) parameter : VGS = VDS , ID = 20 µA 3.2 V 10 9 8 2.4 VGS(th) ID 2.0 7 6 5 1.6 max 1.2 4 3 2 0.4 1 0 1.8 2.0 2.2 2.5 2.8 3.0 3.2 3.5 V 0.8 typ min 4.0 0.0 -60 -20 20 60 100 V 160 VGS Tj Forward characteristics of reverse diode I F = f (VSD) parameter: Tj , tp = 80 µs 10 2 BSO 307 N A 10 1 IF 10 0 Tj = 25 ˚C typ Tj = 150 ˚C typ Tj = 25 ˚C (98%) Tj = 150 ˚C (98%) 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Data Sheet 7 05.99 BSO 307N Avalanche Energy EAS = f (Tj) parameter: ID = 5 A, VDD = 25 V RGS = 25 Ω 60 Typ. gate charge VGS = f (Q Gate) parameter: ID puls = 4.1 A BSO 307 N 16 V mJ 12 VGS EAS 40 10 30 8 0,2 VDS max 0,8 VDS max 6 20 4 10 2 0 20 40 60 80 100 120 ˚C 160 0 0 2 4 6 8 10 12 14 16 nC 19 Drain-source breakdown voltage Tj Q Gate V(BR)DSS = f (Tj) BSO 307 N 37 V 35 V(BR)DSS 34 33 32 31 30 29 28 27 0 20 40 60 80 100 120 ˚C 160 Tj Data Sheet 8 05.99